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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3458BDV-T1-GE3

Name: SI3458BDV-T1-GE3
Brand: Vishay Siliconix
SKU: SI3458BDV-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3458BDV-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3458BDV-T1-GE3.pdf

Description:: MOSFET N-CH 60V 4.1A 6TSOP

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Product details

Overview

SI3458BDV-T1-GE3 from Vishay Siliconix is a halogen-free, lead-free N-channel TrenchFET® power MOSFET rated for 60 V V_DS, with R_DS(on) = 0.100 Ω at V_GS = 10 V and 4.1 A continuous drain current at T_C = 25 °C. It serves as a low-side load switch in portable power management, LED backlighting, and DC/DC converter synchronous rectification stages.

For engineers reviewing the SI3458BDV-T1-GE3 datasheet, SI3458BDV-T1-GE3 pinout, SI3458BDV-T1-GE3 application, or SI3458BDV-T1-GE3 equivalent, key selection criteria include its TSOP-6 package thermal performance (R_thJF = 32 °C/W), gate charge (Q_g = 3.5 nC at 4.5 V), body diode recovery (t_rr = 25 ns), and compliance with IEC 61249-2-21 halogen-free requirements.

Technical Context

This MOSFET employs Vishay's TrenchFET® process to achieve low R_DS(on) and fast switching with minimal gate drive requirements. Its 60 V V_DS rating supports operation across 5 V, 12 V, and 24 V input rails, while the 1.5–3.0 V gate threshold enables compatibility with standard logic-level drivers.

The device integrates four parallel drain terminals (Pins 1, 2, 5, 6) in the TSOP-6 package to reduce package inductance and improve thermal conduction to the PCB. Its body diode exhibits t_rr = 25–50 ns and Q_rr = 40–80 nC, supporting efficient operation in hard-switched and synchronous buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Supports input rails up to 48 V DC with margin for transients in industrial and portable systems.
R_DS(on) @ 10 V	0.100 Ω - Enables ≤0.42 W conduction loss at 2.05 A, suitable for compact load switches and high-efficiency converters.
Q_g @ 4.5 V	3.5 nC - Low gate charge allows fast turn-on with minimal driver power, reducing switching losses below 1 MHz.
I_D (continuous)	4.1 A @ T_C = 25 °C - Rated for sustained current in thermally anchored PCB layouts using drain-plane copper.
R_thJF	32 °C/W - Junction-to-foot thermal resistance enables direct heat transfer to PCB copper, critical for unheatsinked designs.
t_rr	25 ns - Fast body diode recovery minimizes shoot-through risk and reduces voltage spikes in synchronous rectifiers.
V_GS(th)	1.5–3.0 V - Logic-level compatible; ensures full enhancement with 3.3 V or 5 V microcontroller GPIOs without level shifters.

Pinout & Package

TSOP-6 surface-mount package (JEDEC MO-193C) with exposed drain paddle; dimensions 3.05 mm × 2.85 mm × 1.05 mm. Four pins (1, 2, 5, 6) are internally connected to the drain for enhanced thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Parallel-connected high-current output path; electrically and thermally tied to exposed copper pad for PCB heat sinking.
3	Source (S)	Return path for load current; referenced to ground in low-side switch configurations.
4	Gate (G)	Control input requiring <3.5 nC charge for full enhancement; sensitive to ESD (±20 V max V_GS).

Key Features

Feature	Design Value
TrenchFET® construction	Delivers 0.100 Ω R_DS(on) at 10 V in TSOP-6, enabling higher current density than planar MOSFETs of same footprint.
100 % R_g tested	Ensures gate resistance ≤3.5 Ω, guaranteeing consistent switching speed and driver compatibility across production lots.
Halogen-free per IEC 61249-2-21	Meets RoHS and environmental compliance mandates without compromising thermal or electrical performance.
Exposed drain paddle	Provides low-impedance thermal path to PCB; achieves R_thJF = 32 °C/W for reliable operation at T_J ≤150 °C.

Applications

Portable Load Switching	LED Backlight Control
Use Scenario: Power gating of USB peripherals, sensors, or display modules in battery-powered handheld devices. IC Role / Device Role / Timing Role: Low-side N-channel switch controlled by MCU GPIO to enable/disable power domains. Use Value: 0.100 Ω R_DS(on) limits dropout to <210 mV at 2.1 A, preserving battery runtime; TSOP-6 footprint saves board space.	Use Scenario: PWM dimming control of white LED strings in smartphone or tablet displays. IC Role / Device Role / Timing Role: Synchronous current sink switch operating at 1–20 kHz PWM frequencies. Use Value: 3.5 nC Q_g enables clean 100 ns rise/fall times, minimizing PWM distortion and audible noise.
DC/DC Synchronous Rectifier	Industrial 24 V Load Management
Use Scenario: Secondary-side rectification in non-isolated buck converters powering FPGA or DSP core supplies. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode to reduce conduction loss and improve efficiency. Use Value: Body diode t_rr = 25 ns prevents reverse recovery losses; R_DS(on) cuts forward drop vs. 0.4 V Schottky at 2 A.	Use Scenario: Overcurrent-protected power distribution to actuators, solenoids, or communication interfaces in PLC I/O modules. IC Role / Device Role / Timing Role: Protected high-side or low-side switch with external current-sense and gate driver. Use Value: 60 V V_DS withstands 24 V system transients (ISO 7637-2 Pulse 1/2a); 4.1 A rating supports typical 2 A loads.

Portable Load Switching

LED Backlight Control

Use Scenario: Power gating of USB peripherals, sensors, or display modules in battery-powered handheld devices.

IC Role / Device Role / Timing Role: Low-side N-channel switch controlled by MCU GPIO to enable/disable power domains.

Use Value: 0.100 Ω R_DS(on) limits dropout to <210 mV at 2.1 A, preserving battery runtime; TSOP-6 footprint saves board space.

Use Scenario: PWM dimming control of white LED strings in smartphone or tablet displays.

IC Role / Device Role / Timing Role: Synchronous current sink switch operating at 1–20 kHz PWM frequencies.

Use Value: 3.5 nC Q_g enables clean 100 ns rise/fall times, minimizing PWM distortion and audible noise.

DC/DC Synchronous Rectifier

Industrial 24 V Load Management

Use Scenario: Secondary-side rectification in non-isolated buck converters powering FPGA or DSP core supplies.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: Body diode t_rr = 25 ns prevents reverse recovery losses; R_DS(on) cuts forward drop vs. 0.4 V Schottky at 2 A.

Use Scenario: Overcurrent-protected power distribution to actuators, solenoids, or communication interfaces in PLC I/O modules.

IC Role / Device Role / Timing Role: Protected high-side or low-side switch with external current-sense and gate driver.

Use Value: 60 V V_DS withstands 24 V system transients (ISO 7637-2 Pulse 1/2a); 4.1 A rating supports typical 2 A loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3456DV-T1-GE3	Same TSOP-6 package, but 40 V V_DS, 0.055 Ω R_DS(on) @ 10 V, 5.3 A I_D.	Better suited for 3.3 V/5 V logic rails and lower-voltage DC/DC stages where 60 V margin is unnecessary.	Select when system V_IN ≤36 V and lower R_DS(on) is prioritized over transient robustness.
DMN3026LSD-13	30 V V_DS, 0.026 Ω R_DS(on) @ 10 V, SO-8 package, higher Q_g (12 nC).	Higher current capability (8.5 A) but larger footprint and slower switching due to higher gate charge.	Choose for higher-power 12 V applications where PCB area permits SO-8 and thermal mass offsets higher R_thJA.

Compared with SI3458BDV-T1-GE3, Si3456DV-T1-GE3 trades 20 V breakdown margin for lower on-resistance in compact systems, while DMN3026LSD-13 offers higher current handling in a larger package at the cost of switching speed and board area efficiency.

Availability

SI3458BDV-T1-GE3 is available at Aetrix Electronics and suitable for portable load switching, LED backlight control, and DC/DC synchronous rectification requiring stable component supply, halogen-free compliance, and TSOP-6 thermal performance.

Supply support for SI3458BDV-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and green manufacturing.

The SI3458BDV-T1-GE3 belongs to Vishay's TrenchFET® "Little Foot" family, engineered for high-current density in ultra-compact surface-mount packages targeting space-constrained portable and industrial power systems.

FAQ

What is the maximum continuous drain current for SI3458BDV-T1-GE3 at 70 °C case temperature?

The SI3458BDV-T1-GE3 supports 3.2 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOP-6 package under real-world PCB mounting conditions and must be verified against actual board layout and airflow. The SI3458BDV-T1-GE3 datasheet confirms this value applies to steady-state operation with proper copper plane thermal design.

Does SI3458BDV-T1-GE3 require a gate resistor for safe operation?

The SI3458BDV-T1-GE3 does not mandate an external gate resistor for basic functionality, but a 1–10 Ω series resistor is recommended to dampen ringing and control dV/dt during switching. The device's 3.5 nC total gate charge and 2.3–3.5 Ω intrinsic gate resistance make it responsive to low-impedance drivers; omitting the resistor may cause overshoot or EMI in high-speed applications. Always validate gate drive behavior with the SI3458BDV-T1-GE3 in your specific layout.

Can SI3458BDV-T1-GE3 be used in high-frequency PWM applications above 500 kHz?

Yes, the SI3458BDV-T1-GE3 supports PWM operation up to 1 MHz due to its low 3.5 nC gate charge and fast switching times (t_r = 17 ns, t_f = 10 ns at V_GEN = 4.5 V). However, efficiency at >500 kHz depends on PCB layout parasitics and driver strength; gate drive impedance and trace inductance become dominant loss factors. Thermal performance of the SI3458BDV-T1-GE3 must be validated under actual high-frequency switching conditions.

Is SI3458BDV-T1-GE3 pin-compatible with other TSOP-6 MOSFETs like Si3453DV?

No, SI3458BDV-T1-GE3 is not pin-compatible with Si3453DV. While both use TSOP-6 packaging, Si3453DV has a different pinout: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain, Pin 5 = Drain, Pin 6 = Drain - unlike SI3458BDV-T1-GE3's Pin 1/2/5/6 = Drain configuration. Substituting without layout revision will cause functional failure. Always verify pin mapping before replacement using the official SI3458BDV-T1-GE3 datasheet.

What is the body diode forward voltage of SI3458BDV-T1-GE3 at 2.5 A?

The SI3458BDV-T1-GE3 body diode exhibits a forward voltage (V_SD) of 0.8–1.2 V at I_S = 2.5 A and V_GS = 0 V, as measured at T_J = 25 °C. This range accounts for process variation and junction temperature effects; at elevated temperatures, V_SD decreases slightly. This parameter is critical when using the SI3458BDV-T1-GE3 in asynchronous rectification or freewheeling paths.

SI3458BDV-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 4.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 3.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3458BDV-T1-GE3 FAQ

1.How can I place an order for SI3458BDV-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3458BDV-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3458BDV-T1-GE3 reliable?

The price and inventory of SI3458BDV-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3458BDV-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI3458BDV-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3458BDV-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3458BDV-T1-GE3?

SI3458BDV-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3458BDV-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3458BDV-T1-GE3?

For technical support, including SI3458BDV-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3458BDV-T1-GE3 requirements.

6.How does Aetrix verify that SI3458BDV-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI3458BDV-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3458BDV-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI3458BDV-T1-GE3?

All SI3458BDV-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3458BDV-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3458BDV-T1-GE3 part is unused and in its original packaging.

Return procedure for SI3458BDV-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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