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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3459BDV-T1-BE3

Name: SI3459BDV-T1-BE3
Brand: Vishay Siliconix
SKU: SI3459BDV-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3459BDV-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3459BDV-T1-BE3.pdf

Description:: P-CHANNEL 60-V (D-S) MOSFET

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Product details

Overview

SI3459BDV-T1-BE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET rated for -60 V drain-source voltage, with R_DS(on) of 0.216 Ω at V_GS = -10 V and 0.288 Ω at V_GS = -4.5 V, delivering -2.9 A continuous drain current at T_C = 25 °C in a TSOP-6 surface-mount package - used as a low-side load switch in power management circuits.

For engineers reviewing the SI3459BDV-T1-BE3 datasheet, SI3459BDV-T1-BE3 pinout, SI3459BDV-T1-BE3 application, or SI3459BDV-T1-BE3 equivalent, this page delivers verified electrical parameters, thermal resistance data (R_thJA = 62.5 °C/W max), gate charge (Q_g = 4.4 nC typ. at -4.5 V), body diode characteristics (V_SD = -0.8 to -1.2 V), and validated alternative parts for industrial load switching designs.

Technical Context

This device operates as a single P-channel MOSFET with trench-based silicon architecture, optimized for low-voltage gate drive compatibility down to -4.5 V. Its gate threshold voltage (V_GS(th)) ranges from -1 V to -3 V, enabling reliable turn-on in 5 V and 3.3 V logic-controlled systems.

Thermal design is supported by a maximum junction-to-foot resistance (R_thJF) of 38 °C/W and a steady-state junction-to-ambient rating of 110 °C/W on 1" × 1" FR4. The integrated source-drain body diode exhibits t_rr = 28–56 ns and Q_rr = 35–70 nC, suitable for moderate-frequency switching with controlled reverse recovery.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - supports operation across industrial 24 V and telecom -48 V supply rails without breakdown.
R_DS(on) @ V_GS = -10 V	0.216 Ω max - limits conduction loss to ≤1.3 W at -2.2 A, enabling efficient load switching.
R_DS(on) @ V_GS = -4.5 V	0.288 Ω max - ensures functional on-state performance with standard 5 V microcontroller GPIOs.
Q_g	4.4 nC typ. at -4.5 V - enables fast turn-on with low gate-drive power, reducing switching losses below 100 kHz.
I_D (continuous)	-2.2 A at T_A = 25 °C - defines usable current in non-heatsinked PCB layouts with standard copper area.
V_GS(th)	-1 V to -3 V - guarantees robust turn-on margin with TTL/CMOS-compatible negative gate signals.
t_rr	28–56 ns - constrains reverse recovery energy in inductive load switching, limiting voltage overshoot.

Pinout & Package

TSOP-6 package: 2.95–3.10 mm × 2.70–2.98 mm footprint, 0.95 mm pitch, 0.91–1.10 mm height, designed for automated SMT assembly and thermal relief via exposed drain pads.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 6	Drain (D)	Common high-current output node; internally connected to exposed pad for thermal conduction and low-inductance routing.
4	Source (S)	Return path for load current; referenced to system ground or negative rail in high-side configurations.
5	Gate (G)	Control input requiring negative voltage relative to source to turn on; sensitive to ESD (±20 V absolute max).

Key Features

Feature	Design Value
TrenchFET® construction	Enables lower R_DS(on) per die area vs. planar MOSFETs, improving power density in space-constrained modules.
100 % R_g tested	Guarantees gate resistance between 2 Ω and 20 Ω, ensuring consistent switching timing and driver compatibility.
Exposed drain pad	Provides low thermal resistance path (R_thJF = 32–38 °C/W) and reduces parasitic inductance in high-di/dt load switching.
Body diode with low Q_rr	Q_rr = 35–70 nC minimizes energy dissipation during freewheeling, critical for relay replacement and hot-swap circuits.

Applications

Industrial Power Sequencing	USB Port Protection
Use Scenario: Controlled power-up/down sequencing of multiple 24 V subsystems in PLC I/O modules. IC Role / Device Role / Timing Role: Low-side load switch enabling independent enable/disable control per channel with minimal board area. Use Value: R_DS(on) ≤ 0.288 Ω at -4.5 V ensures <100 mW conduction loss at 2 A, eliminating need for external heat sinks.	Use Scenario: Overcurrent and short-circuit protection for downstream USB peripherals in embedded host controllers. IC Role / Device Role / Timing Role: Reverse-polarity and fault-isolation switch placed between USB VBUS and peripheral power input. Use Value: Fast turn-off (t_f = 10–15 ns at -10 V) and low Q_g allow rapid shutdown (<1 µs) during overcurrent events.
Telecom Line Card Biasing	Hot-Swap Controller Back-End
Use Scenario: Bias voltage regulation and isolation for analog front-end circuitry in -48 V telecom line cards. IC Role / Device Role / Timing Role: High-reliability P-channel switch managing bias rail delivery under varying load conditions. Use Value: V_DS = -60 V rating provides 12 V margin above nominal -48 V rail, supporting transient surges per GR-1089.	Use Scenario: Secondary power path switch in hot-swap controllers where primary FET handles inrush, and secondary manages steady-state load. IC Role / Device Role / Timing Role: Complementary low-R_DS(on) switch operating in parallel with controller IC's internal FET for higher current capability. Use Value: Matching R_DS(on) tolerance and thermal coefficient ensures balanced current sharing with minimal derating.

Industrial Power Sequencing

USB Port Protection

Use Scenario: Controlled power-up/down sequencing of multiple 24 V subsystems in PLC I/O modules.

IC Role / Device Role / Timing Role: Low-side load switch enabling independent enable/disable control per channel with minimal board area.

Use Value: R_DS(on) ≤ 0.288 Ω at -4.5 V ensures <100 mW conduction loss at 2 A, eliminating need for external heat sinks.

Use Scenario: Overcurrent and short-circuit protection for downstream USB peripherals in embedded host controllers.

IC Role / Device Role / Timing Role: Reverse-polarity and fault-isolation switch placed between USB VBUS and peripheral power input.

Use Value: Fast turn-off (t_f = 10–15 ns at -10 V) and low Q_g allow rapid shutdown (<1 µs) during overcurrent events.

Telecom Line Card Biasing

Hot-Swap Controller Back-End

Use Scenario: Bias voltage regulation and isolation for analog front-end circuitry in -48 V telecom line cards.

IC Role / Device Role / Timing Role: High-reliability P-channel switch managing bias rail delivery under varying load conditions.

Use Value: V_DS = -60 V rating provides 12 V margin above nominal -48 V rail, supporting transient surges per GR-1089.

Use Scenario: Secondary power path switch in hot-swap controllers where primary FET handles inrush, and secondary manages steady-state load.

IC Role / Device Role / Timing Role: Complementary low-R_DS(on) switch operating in parallel with controller IC's internal FET for higher current capability.

Use Value: Matching R_DS(on) tolerance and thermal coefficient ensures balanced current sharing with minimal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3457DV-T1-E3	R_DS(on) = 0.145 Ω @ -10 V (lower), but V_DS = -40 V (reduced voltage margin)	Better efficiency at 12 V systems; unsuitable for -48 V telecom or 24 V industrial transients	Select when operating ≤ -30 V and prioritizing conduction loss over surge margin.
DMN3026LFG-7	R_DS(on) = 0.22 Ω @ -4.5 V (similar), but Q_g = 6.5 nC (higher), and R_thJA = 100 °C/W (worse thermal performance)	Higher gate drive demand and reduced thermal headroom limit use in compact enclosures or high ambient temps	Select only if TSOP-6 footprint compatibility is required and thermal budget allows ≥20 °C derating.

Compared with Si3457DV-T1-E3 and DMN3026LFG-7, SI3459BDV-T1-BE3 uniquely balances -60 V ruggedness, -4.5 V drivability, and 62.5 °C/W thermal resistance - making it optimal for industrial 24 V and telecom -48 V load switching where voltage margin and thermal reliability are co-critical.

Availability

SI3459BDV-T1-BE3 is available at Aetrix Electronics and suitable for industrial power sequencing, USB port protection, telecom line card biasing, and hot-swap controller back-end applications requiring stable component supply and long-term manufacturability.

Supply support for SI3459BDV-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power solutions.

The SI3459BDV-T1-BE3 belongs to Vishay's TrenchFET® P-channel MOSFET product line, engineered for low-voltage gate drive compatibility and robust operation in industrial and telecom power management systems.

FAQ

What is the maximum gate-source voltage rating for SI3459BDV-T1-BE3?

The SI3459BDV-T1-BE3 has a gate-source voltage rating of ±20 V. Exceeding this limit risks permanent gate oxide damage. In practice, gate drive should be limited to -10 V for full enhancement and -4.5 V for logic-level compatibility, both well within the safe operating range. The SI3459BDV-T1-BE3 datasheet specifies this absolute maximum in the Absolute Maximum Ratings table.

Does SI3459BDV-T1-BE3 include an integrated body diode, and what are its key parameters?

Yes, the SI3459BDV-T1-BE3 integrates a source-drain body diode with forward voltage V_SD = -0.8 to -1.2 V at I_S = -1.8 A and reverse recovery time t_rr = 28–56 ns. These values are measured under standardized conditions (I_F = -1.8 A, di/dt = 100 A/µs, T_J = 25 °C). The SI3459BDV-T1-BE3 body diode enables freewheeling in inductive loads and supports reverse-polarity protection functions.

What is the thermal resistance from junction to ambient for SI3459BDV-T1-BE3 under standard mounting conditions?

The SI3459BDV-T1-BE3 has a maximum junction-to-ambient thermal resistance (R_thJA) of 62.5 °C/W when mounted on a 1" × 1" FR4 board with standard copper coverage. This value applies for pulse durations ≤5 s; steady-state operation yields 110 °C/W. The SI3459BDV-T1-BE3 datasheet confirms these ratings in the Thermal Resistance Ratings table and notes condition "a" for surface-mount configuration.

Can SI3459BDV-T1-BE3 be driven directly by a 3.3 V microcontroller GPIO?

No - the SI3459BDV-T1-BE3 requires a negative gate-source voltage to turn on, and its V_GS(th) range (-1 V to -3 V) means a 3.3 V GPIO alone cannot produce the necessary negative bias. It must be paired with level-shifting circuitry (e.g., charge pump or complementary driver) to generate -4.5 V or lower relative to source. The SI3459BDV-T1-BE3 is compatible with 5 V logic when referenced to a negative rail or using open-drain pull-down topologies.

What is the total gate charge (Q_g) of SI3459BDV-T1-BE3 at V_GS = -4.5 V, and why does it matter?

The SI3459BDV-T1-BE3 has a typical total gate charge (Q_g) of 4.4 nC at V_GS = -4.5 V, with a maximum of 6.6 nC. This parameter determines gate driver strength requirements and switching speed: lower Q_g enables faster turn-on with smaller drivers and reduced switching losses. The SI3459BDV-T1-BE3 Q_g value is specified in the Dynamic section of the datasheet under test condition V_DS = -30 V, I_D = -2.2 A.

SI3459BDV-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 2.2A (Ta), 2.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 216mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 3.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3459BDV-T1-BE3 FAQ

1.How can I place an order for SI3459BDV-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3459BDV-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3459BDV-T1-BE3 reliable?

The price and inventory of SI3459BDV-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3459BDV-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI3459BDV-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3459BDV-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3459BDV-T1-BE3?

SI3459BDV-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3459BDV-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3459BDV-T1-BE3?

For technical support, including SI3459BDV-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3459BDV-T1-BE3 requirements.

6.How does Aetrix verify that SI3459BDV-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI3459BDV-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3459BDV-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI3459BDV-T1-BE3?

All SI3459BDV-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3459BDV-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3459BDV-T1-BE3 part is unused and in its original packaging.

Return procedure for SI3459BDV-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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