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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3459BDV-T1-E3

Name: SI3459BDV-T1-E3
Brand: Vishay Siliconix
SKU: SI3459BDV-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3459BDV-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3459BDV-T1-E3.pdf

Description:: MOSFET P-CH 60V 2.9A 6TSOP

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Product details

Overview

SI3459BDV-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for low-side load switching in space-constrained DC power rails. It features -60 V V_DS, 0.216 Ω R_DS(on) at -10 V V_GS, 4.4 nC total gate charge, -2.9 A continuous drain current (T_C = 25 °C), and TSOP-6 surface-mount package. It is used in USB-powered peripheral power control and industrial I/O module rail switching.

For engineers reviewing the SI3459BDV-T1-E3 datasheet, SI3459BDV-T1-E3 pinout, SI3459BDV-T1-E3 application, or SI3459BDV-T1-E3 equivalent, key selection criteria include verified -60 V blocking capability, guaranteed 100 % R_g testing, thermal resistance of 62.5 °C/W (R_thJA max), body diode recovery time (t_rr = 28–56 ns), and compatibility with -4.5 V logic-level gate drive.

Technical Context

This device uses TrenchFET® technology to achieve low on-resistance and fast switching in a thermally efficient TSOP-6 footprint. Its gate threshold voltage range (-1 V to -3 V) ensures reliable turn-on with standard logic-level controllers, while its -60 V V_DS rating supports industrial 48 V bus and PoE-powered systems.

The integrated source-drain body diode has a forward voltage of -0.8 V to -1.2 V at -1.8 A and exhibits controlled reverse recovery (Q_rr = 35–70 nC), enabling use in synchronous rectification and bidirectional current paths where diode conduction is unavoidable.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Supports 48 V nominal bus operation with 25 % safety margin against transients
R_DS(on) max @ -10 V	0.216 Ω - Limits conduction loss to ≤1.3 W at -2.5 A continuous current
R_DS(on) max @ -4.5 V	0.288 Ω - Ensures functional switching with 3.3 V GPIO or microcontroller outputs
Q_g typ.	4.4 nC - Enables <100 ns turn-on delay with 1 Ω gate resistor and -4.5 V drive
I_D continuous (T_C = 25 °C)	-2.9 A - Sustains full-rated load without derating when mounted on ≥1" × 1" FR4 board
R_thJA max	62.5 °C/W - Requires thermal design margining below 110 °C junction temperature at ambient
t_rr	28–56 ns - Minimizes switching loss and EMI during body diode commutation

Pinout & Package

TSOP-6 package with exposed drain pad for enhanced thermal performance; 3.05 mm × 2.85 mm footprint, 1.0 mm max height, JEDEC MO-193C compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 6	Drain (D)	Common high-current output node; internally connected to exposed pad for thermal conduction
4	Source (S)	Return path for load current; referenced to system ground in low-side switch configuration
5	Gate (G)	Control input requiring negative voltage relative to source to turn on; sensitive to ESD

Key Features

Feature	Design Value
TrenchFET® construction	Delivers industry-leading R_DS(on) × area efficiency for compact PCB layouts
100 % R_g tested	Guarantees gate resistance ≤20 Ω, ensuring predictable turn-on timing and driver compatibility
Low Q_gd/Q_g ratio	0.32 (2.5/7.7 nC) - Reduces Miller effect, improving noise immunity during hard switching
Body diode with t_b ≤5 ns	Fast reverse recovery rise time minimizes voltage overshoot during inductive turn-off
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization standard 99912

Applications

USB Peripheral Power Switch	Industrial I/O Module Rail Control
Use Scenario: Enabling/disabling 5 V or 12 V power to external USB peripherals (e.g., hubs, sensors) under host MCU control. IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery path; operates in static on/off mode with <10 μs response. Use Value: Prevents back-powering and enables hot-plug safe operation with minimal voltage drop (<0.75 V at 2.2 A).	Use Scenario: Isolating field-side 24 V DC power rails in programmable logic controller (PLC) digital output modules. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays; driven by isolated 3.3 V logic via optocoupler. Use Value: Eliminates contact wear, supports >1 MHz switching for diagnostic pulsing, and reduces board area by 70 % vs. relay solution.
48 V PoE-Powered Equipment	Automotive Body Control Subsystem
Use Scenario: Secondary-side power switching in IEEE 802.3bt Type 4 (90 W) powered devices such as IP cameras and wireless access points. IC Role / Device Role / Timing Role: Input stage switch managing auxiliary rail sequencing and surge protection coordination. Use Value: Withstands 60 V transients per IEEE 802.3bt Annex 122, and R_DS(on) stability over -40 to +125 °C ensures reliability across environmental stress tests.	Use Scenario: Controlling 12 V lighting loads (e.g., interior lamps, courtesy lights) in automotive body control modules (BCMs). IC Role / Device Role / Timing Role: High-side or low-side switch managed by CAN-connected microcontroller; supports PWM dimming up to 1 kHz. Use Value: -55 to +150 °C operating range meets AEC-Q101 stress test requirements; low Q_g enables clean PWM edges without shoot-through risk.

USB Peripheral Power Switch

Industrial I/O Module Rail Control

Use Scenario: Enabling/disabling 5 V or 12 V power to external USB peripherals (e.g., hubs, sensors) under host MCU control.

IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery path; operates in static on/off mode with <10 μs response.

Use Value: Prevents back-powering and enables hot-plug safe operation with minimal voltage drop (<0.75 V at 2.2 A).

Use Scenario: Isolating field-side 24 V DC power rails in programmable logic controller (PLC) digital output modules.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays; driven by isolated 3.3 V logic via optocoupler.

Use Value: Eliminates contact wear, supports >1 MHz switching for diagnostic pulsing, and reduces board area by 70 % vs. relay solution.

48 V PoE-Powered Equipment

Automotive Body Control Subsystem

Use Scenario: Secondary-side power switching in IEEE 802.3bt Type 4 (90 W) powered devices such as IP cameras and wireless access points.

IC Role / Device Role / Timing Role: Input stage switch managing auxiliary rail sequencing and surge protection coordination.

Use Value: Withstands 60 V transients per IEEE 802.3bt Annex 122, and R_DS(on) stability over -40 to +125 °C ensures reliability across environmental stress tests.

Use Scenario: Controlling 12 V lighting loads (e.g., interior lamps, courtesy lights) in automotive body control modules (BCMs).

IC Role / Device Role / Timing Role: High-side or low-side switch managed by CAN-connected microcontroller; supports PWM dimming up to 1 kHz.

Use Value: -55 to +150 °C operating range meets AEC-Q101 stress test requirements; low Q_g enables clean PWM edges without shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET load switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN601WK-7	-60 V V_DS, 0.25 Ω R_DS(on) @ -10 V, higher Q_g (7.5 nC), SOT-26 package	Larger R_thJA (105 °C/W) limits power handling on same PCB area	Prefer SI3459BDV-T1-E3 for thermal-limited designs; DMN601WK-7 suits cost-sensitive, lower-current cases
IRLML6344TRPBF	-20 V V_DS, 0.075 Ω R_DS(on) @ -4.5 V, 5.3 nC Q_g, SOT-23 package	Insufficient voltage rating for 48 V systems; unsuitable for PoE or industrial 24/48 V rails	Select SI3459BDV-T1-E3 when -60 V blocking and industrial temperature range are mandatory

Compared with DMN601WK-7 and IRLML6344TRPBF, SI3459BDV-T1-E3 offers superior thermal performance (62.5 °C/W R_thJA max) and verified -60 V capability-critical for 48 V PoE and industrial 24 V applications where voltage margin and junction temperature control directly impact field reliability.

Availability

SI3459BDV-T1-E3 is available at Aetrix Electronics and suitable for USB peripheral power management, industrial I/O module rail control, and 48 V PoE-powered equipment requiring stable component supply and long-term manufacturability.

Supply support for SI3459BDV-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power solutions.

The Si3459BDV belongs to Vishay's TrenchFET® P-channel logic-level MOSFET product line, engineered for low-voltage gate drive compatibility and minimal conduction loss in compact, thermally demanding load-switch applications.

FAQ

What is the maximum continuous drain current rating for SI3459BDV-T1-E3 at 70 °C case temperature?

The SI3459BDV-T1-E3 supports -2.3 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOP-6 package without additional heatsinking. At ambient conditions (T_A = 25 °C), the rating drops to -2.2 A due to higher junction-to-ambient thermal resistance. The SI3459BDV-T1-E3 must be mounted on a minimum 1" × 1" FR4 board to achieve these values.

Does SI3459BDV-T1-E3 support logic-level gate drive from a 3.3 V microcontroller?

Yes, SI3459BDV-T1-E3 is fully compatible with 3.3 V logic-level gate drive. Its gate threshold voltage range is -1 V to -3 V, and R_DS(on) is specified at -4.5 V V_GS (0.288 Ω max). When driven with -3.3 V, it achieves usable conduction-verified by typical transfer characteristics showing -1.9 A ID at V_GS = -3.3 V and V_DS = -5 V. The SI3459BDV-T1-E3 thus enables direct interface with common 3.3 V MCUs without level-shifting circuitry.

What is the thermal resistance from junction to foot (R_thJF) for SI3459BDV-T1-E3, and why does it matter?

The SI3459BDV-T1-E3 has a maximum junction-to-foot thermal resistance (R_thJF) of 38 °C/W under steady-state conditions. This parameter quantifies heat flow from the silicon die to the exposed drain pad-the primary thermal path in TSOP-6 packages. A low R_thJF allows effective heat transfer to copper planes or thermal vias, making it critical for designs using internal PCB copper as a heatsink. The SI3459BDV-T1-E3 leverages this path to sustain higher currents than junction-to-ambient alone would permit.

Can SI3459BDV-T1-E3 be used in bidirectional current applications?

The SI3459BDV-T1-E3 supports bidirectional current flow only in the source-to-drain direction via its intrinsic body diode, which is rated for -2.9 A continuous and -8 A pulsed current. However, it cannot conduct significant current from drain to source without gate bias, as it is a unidirectional P-channel MOSFET. For true bidirectional switching, two SI3459BDV-T1-E3 devices in series back-to-back are required. The SI3459BDV-T1-E3 body diode's t_rr (28–56 ns) and Q_rr (35–70 nC) are characterized for controlled commutation in such configurations.

Is SI3459BDV-T1-E3 suitable for automotive applications per AEC-Q101?

The SI3459BDV-T1-E3 is not AEC-Q101 qualified. While it operates across -55 °C to +150 °C and meets industrial reliability standards, Vishay does not list it in their AEC-Q101 qualified MOSFET portfolio. For automotive body electronics, designers should select explicitly qualified alternatives such as the SQJQ412EP or SI3483DV. The SI3459BDV-T1-E3 remains appropriate for industrial, computing, and communications equipment where extended temperature range and robustness are required but formal automotive qualification is not mandated.

SI3459BDV-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 2.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 216mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3459BDV-T1-E3 FAQ

1.How can I place an order for SI3459BDV-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3459BDV-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3459BDV-T1-E3 reliable?

The price and inventory of SI3459BDV-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3459BDV-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI3459BDV-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3459BDV-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3459BDV-T1-E3?

SI3459BDV-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3459BDV-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3459BDV-T1-E3?

For technical support, including SI3459BDV-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3459BDV-T1-E3 requirements.

6.How does Aetrix verify that SI3459BDV-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI3459BDV-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3459BDV-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI3459BDV-T1-E3?

All SI3459BDV-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3459BDV-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3459BDV-T1-E3 part is unused and in its original packaging.

Return procedure for SI3459BDV-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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