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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3460BDV-T1-BE3

Name: SI3460BDV-T1-BE3
Brand: Vishay Siliconix
SKU: SI3460BDV-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3460BDV-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3460BDV-T1-BE3.pdf

Description:: N-CHANNEL 20-V (D-S) MOSFET

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Product details

Overview

SI3460BDV-T1-BE3 from Vishay Siliconix is an N-channel 20-V TrenchFET® power MOSFET in TSOP-6 package, optimized for low-voltage load switching with R_DS(on) = 0.027 Ω at V_GS = 4.5 V, 8 A continuous drain current, and 9 nC total gate charge - deployed in portable device power rails and USB-powered subsystems.

For engineers reviewing the SI3460BDV-T1-BE3 datasheet, SI3460BDV-T1-BE3 pinout, SI3460BDV-T1-BE3 application, or SI3460BDV-T1-BE3 equivalent, key selection criteria include its 1.8 V logic-level gate drive capability, thermal resistance (R_thJA = 62.5 °C/W), body diode recovery time (t_rr = 20–40 ns), and RoHS/halogen-free compliance per IEC 61249-2-21.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance with fast switching dynamics. Its gate threshold voltage (V_GS(th) = 0.45–1.0 V) enables reliable turn-on from 1.8 V microcontroller I/O, while the 860 pF input capacitance (C_iss) and 65 pF reverse transfer capacitance (C_rss) support efficient gate driving at moderate frequencies.

The device integrates a robust intrinsic body diode rated for 8 A continuous source-drain current and exhibits t_rr = 20–40 ns with Q_rr = 9–20 nC under 100 A/µs dI/dt - critical for synchronous rectification and bidirectional power path control in compact DC-DC architectures.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - supports operation across 3.3 V, 5 V, and 12 V bus systems without avalanche stress
R_DS(on)	0.027 Ω @ V_GS = 4.5 V - limits conduction loss to ≤1.1 mW at 5 A, enabling high-efficiency load switching
I_D (continuous)	6.7 A @ T_A = 25 °C - defines maximum ambient-rated current for PCB-mounted operation without heatsink
Q_g	9 nC @ V_GS = 4.5 V - determines gate driver current requirement (~1.8 mA avg. for 500 ns turn-on)
t_rr	20–40 ns - enables use in 1–2 MHz DC-DC converters with minimal reverse recovery loss
R_thJA	62.5 °C/W - sets thermal derating slope: ~13.5 °C rise per watt dissipated in standard FR4 layout

Pinout & Package

TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm footprint, 0.95 mm pitch, drain-connected leads (pins 1, 2, 5, 6) for enhanced thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Common high-current output node; thermally coupled to PCB copper pour for heat dissipation
3	Source (S)	Power return path; referenced to system ground or negative rail in high-side switch configurations
4	Gate (G)	CMOS-compatible control input; requires <10 nC charge for full enhancement from 1.8 V logic

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced down to V_GS = 1.8 V - eliminates need for level-shifting in modern MCU-based power sequencing
TrenchFET® architecture	Delivers 27 mΩ R_DS(on) in TSOP-6 - achieves >3× lower on-resistance than planar MOSFETs of same size
Halogen-free construction	Complies with IEC 61249-2-21 - meets environmental requirements for consumer electronics and medical devices
Low Q_gd/Q_gs ratio	Q_gd = Q_gs = 1.4 nC - minimizes Miller effect, enabling stable switching with low gate resistance drivers

Applications

USB Power Delivery Switching	Smartphone Battery Protection
Use Scenario: Controlling 5 V power path between USB-C port and internal PMIC during hot-plug events. IC Role / Device Role / Timing Role: Low-side load switch managing inrush current and fault isolation. Use Value: 0.027 Ω R_DS(on) limits voltage drop to <135 mV at 5 A, preserving bus regulation margin.	Use Scenario: Isolating main Li-ion battery from charging circuitry during overvoltage or thermal fault conditions. IC Role / Device Role / Timing Role: High-reliability protection FET in battery management system (BMS) front-end. Use Value: 150 °C max junction temperature and -55 °C min storage rating support automotive-grade thermal cycling requirements.
Portable SSD Power Sequencing	Industrial Sensor Node Rail Switching
Use Scenario: Enabling/disabling 3.3 V NVMe controller supply after secure boot validation completes. IC Role / Device Role / Timing Role: Controlled power gate activated by FPGA GPIO with 1.8 V logic compatibility. Use Value: 9 nC Q_g allows clean 100 µs turn-on using standard 10 kΩ pull-up without overshoot.	Use Scenario: Selectively powering 2.5 V analog sensor interface only during measurement cycles to extend battery life. IC Role / Device Role / Timing Role: Ultra-low-quiescent-load switch minimizing standby current leakage. Use Value: IDSS ≤ 1 µA at 20 V ensures <100 nA system-level sleep current contribution.

USB Power Delivery Switching

Smartphone Battery Protection

Use Scenario: Controlling 5 V power path between USB-C port and internal PMIC during hot-plug events.

IC Role / Device Role / Timing Role: Low-side load switch managing inrush current and fault isolation.

Use Value: 0.027 Ω R_DS(on) limits voltage drop to <135 mV at 5 A, preserving bus regulation margin.

Use Scenario: Isolating main Li-ion battery from charging circuitry during overvoltage or thermal fault conditions.

IC Role / Device Role / Timing Role: High-reliability protection FET in battery management system (BMS) front-end.

Use Value: 150 °C max junction temperature and -55 °C min storage rating support automotive-grade thermal cycling requirements.

Portable SSD Power Sequencing

Industrial Sensor Node Rail Switching

Use Scenario: Enabling/disabling 3.3 V NVMe controller supply after secure boot validation completes.

IC Role / Device Role / Timing Role: Controlled power gate activated by FPGA GPIO with 1.8 V logic compatibility.

Use Value: 9 nC Q_g allows clean 100 µs turn-on using standard 10 kΩ pull-up without overshoot.

Use Scenario: Selectively powering 2.5 V analog sensor interface only during measurement cycles to extend battery life.

IC Role / Device Role / Timing Role: Ultra-low-quiescent-load switch minimizing standby current leakage.

Use Value: IDSS ≤ 1 µA at 20 V ensures <100 nA system-level sleep current contribution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 0.032 Ω @ 4.5 V; higher Q_g = 12 nC; SOT-23-6 package	Smaller footprint but 30% higher conduction loss and reduced thermal mass	Prefer when board space is constrained and thermal budget allows +0.5 W dissipation
AO3400	R_DS(on) = 0.026 Ω @ 4.5 V; identical TSOP-6; non-halogen-free, RoHS-only	Lacks halogen-free certification; slightly faster t_r/t_f but higher C_rss (75 pF)	Select when halogen compliance is not required and cost sensitivity outweighs environmental spec

Compared with SI3460BDV-T1-BE3, DMN2004LK-7 trades thermal performance for size, while AO3400 matches on-resistance and package but omits halogen-free compliance - making SI3460BDV-T1-BE3 optimal for regulated portable designs requiring both efficiency and environmental certification.

Availability

SI3460BDV-T1-BE3 is available at Aetrix Electronics and suitable for USB-C power delivery modules, smartphone battery protection circuits, and portable SSD power sequencing requiring stable component supply and full halogen-free compliance.

Supply support for SI3460BDV-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high reliability and thermal performance.

The Si3460BDV belongs to Vishay's TrenchFET® logic-level MOSFET product line, engineered specifically for low-voltage, high-efficiency load switching in space-constrained portable and battery-powered systems.

FAQ

What is the maximum continuous drain current for SI3460BDV-T1-BE3 at room temperature?

The SI3460BDV-T1-BE3 supports 6.7 A continuous drain current at T_A = 25 °C on a standard 1" × 1" FR4 board. This rating is limited by package thermal resistance (R_thJA = 62.5 °C/W) and junction temperature cap of 150 °C - exceeding this current risks thermal runaway unless additional copper area or airflow is provided. The SI3460BDV-T1-BE3 datasheet confirms this value under "Absolute Maximum Ratings".

Does SI3460BDV-T1-BE3 support 1.8 V logic-level gate drive?

Yes, the SI3460BDV-T1-BE3 is specified for full enhancement at V_GS = 1.8 V, with R_DS(on) = 0.040 Ω at I_D = 2.5 A. Its gate threshold voltage range (0.45–1.0 V) ensures reliable turn-on from 1.8 V GPIOs without external level shifting. This behavior is verified in the "Static" section of the SI3460BDV-T1-BE3 datasheet under V_GS(th) and R_DS(on) test conditions.

What is the thermal resistance from junction to ambient for SI3460BDV-T1-BE3?

The SI3460BDV-T1-BE3 has a maximum junction-to-ambient thermal resistance (R_thJA) of 62.5 °C/W under standard surface-mount conditions (1" × 1" FR4 board). This value assumes no added heatsinking and defines the worst-case temperature rise per watt dissipated. The SI3460BDV-T1-BE3 datasheet lists this in the "Thermal Resistance Ratings" table, with typical R_thJA = 50 °C/W.

Is SI3460BDV-T1-BE3 halogen-free and RoHS compliant?

Yes, SI3460BDV-T1-BE3 is both halogen-free per IEC 61249-2-21 and RoHS-compliant per Directive 2002/95/EC. The "-BE3" suffix explicitly denotes lead-free and halogen-free construction. This dual compliance is confirmed in the "Ordering Information" and "Features" sections of the SI3460BDV-T1-BE3 datasheet.

What is the body diode reverse recovery time for SI3460BDV-T1-BE3?

The SI3460BDV-T1-BE3 body diode exhibits a reverse recovery time (t_rr) of 20–40 ns under test conditions of I_F = 5.4 A, dI/dt = 100 A/µs, and T_J = 25 °C. This fast recovery supports use in synchronous buck topologies and bidirectional power paths without significant commutation loss. The SI3460BDV-T1-BE3 datasheet specifies t_rr in the "Drain-Source Body Diode Characteristics" table.

SI3460BDV-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 6.7A (Ta), 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 27mOhm @ 5.1A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 860 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 3.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3460BDV-T1-BE3 FAQ

1.How can I place an order for SI3460BDV-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3460BDV-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3460BDV-T1-BE3 reliable?

The price and inventory of SI3460BDV-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3460BDV-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI3460BDV-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3460BDV-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3460BDV-T1-BE3?

SI3460BDV-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3460BDV-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3460BDV-T1-BE3?

For technical support, including SI3460BDV-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3460BDV-T1-BE3 requirements.

6.How does Aetrix verify that SI3460BDV-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI3460BDV-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3460BDV-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI3460BDV-T1-BE3?

All SI3460BDV-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3460BDV-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3460BDV-T1-BE3 part is unused and in its original packaging.

Return procedure for SI3460BDV-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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