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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3460BDV-T1-E3

Name: SI3460BDV-T1-E3
Brand: Vishay Siliconix
SKU: SI3460BDV-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3460BDV-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3460BDV-T1-E3.pdf

Description:: MOSFET N-CH 20V 8A 6TSOP

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Product details

Overview

SI3460BDV-T1-E3 from Vishay Siliconix is an N-channel 20-V TrenchFET® power MOSFET in TSOP-6 package, with R_DS(on) = 0.027 Ω at V_GS = 4.5 V, 8 A continuous drain current, and 9 nC total gate charge. It serves as a low-voltage load switch in portable electronics and bus power management.

For engineers reviewing the SI3460BDV-T1-E3 datasheet, SI3460BDV-T1-E3 pinout, SI3460BDV-T1-E3 application, or SI3460BDV-T1-E3 equivalent, key selection criteria include its 20 V V_DS, 0.027 Ω on-resistance at 4.5 V drive, TSOP-6 thermal performance (R_thJA = 62.5 °C/W), body diode recovery time (t_rr = 20–40 ns), and Pb-free RoHS compliance.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low R_DS(on) and fast switching in compact surface-mount packages. Its gate threshold voltage (V_GS(th) = 0.45–1.0 V) enables direct logic-level drive from 1.8 V, 2.5 V, and 4.5 V controllers.

The device integrates a robust body diode with V_SD = 0.8–1.2 V at 5.4 A and Q_rr = 9–20 nC, supporting synchronous rectification and bidirectional current handling in DC-DC and load-switch topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage for 3.3 V/5 V system bus protection
R_DS(on) @ 4.5 V	0.027 Ω - Enables ≤135 mW conduction loss at 8 A, critical for thermally constrained portable PCBs
I_D (continuous)	8 A @ T_C = 25 °C - Package-limited current rating suitable for high-side load switching
Q_g @ 4.5 V	9 nC - Low gate charge reduces driver power and enables fast turn-on (<15 ns td(on)) with 1 Ω gate resistor
t_rr	20–40 ns - Fast body diode recovery minimizes shoot-through risk in half-bridge or OR-ing configurations
R_thJA	62.5 °C/W - Thermal resistance defines maximum ambient temperature derating for 2 W dissipation on standard FR4

Pinout & Package

TSOP-6 package (JEDEC MO-193C), 3.05 mm × 2.85 mm footprint, exposed drain pad for thermal enhancement. Pin 1–6 correspond to Gate, Source, Drain, Drain, Drain, Drain per top-view marking and internal die layout.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control input; accepts 1.8–8 V logic-level drive; requires <1 Ω series resistance to damp ringing
2 (S)	Source	Reference node for gate drive and current sensing; tied to system ground or low-side return path
3 (D)	Drain	Main power output terminal; electrically and thermally connected to pins 4, 5, 6 via common copper paddle
4 (D)	Drain	Parallel drain connection; improves current sharing and thermal spreading across package footprint
5 (D)	Drain	Parallel drain connection; reduces effective package inductance in high-di/dt load-switch events
6 (D)	Drain	Parallel drain connection; enhances thermal coupling to PCB copper pour for sustained 2 W operation

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.027 Ω R_DS(on) at 4.5 V in 3 mm × 2.85 mm TSOP-6, enabling space-constrained load switches
Logic-level gate drive	V_GS(th) = 0.45–1.0 V allows direct interface with 1.8 V microcontrollers without level-shifting circuitry
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC; supports environmentally regulated consumer and medical designs
Low Q_gd/Q_g ratio	Q_gd = 1.4 nC / Q_g = 9 nC → 15.6% - Reduces Miller-induced switching instability during hard commutation

Applications

Portable Load Switching	Low-Voltage Bus Protection
Use Scenario: Power sequencing for USB-powered peripherals in smartphones and tablets, where battery voltage ranges from 3.0–4.2 V. IC Role / Device Role / Timing Role: High-side load switch controlling power delivery to camera modules or audio codecs. Use Value: 0.027 Ω R_DS(on) limits voltage drop to <220 mV at 8 A, preserving system efficiency and thermal margin.	Use Scenario: Isolation of 3.3 V or 5 V system buses during hot-plug events or fault conditions in industrial handhelds. IC Role / Device Role / Timing Role: Bidirectional bus switch with integrated body diode enabling reverse-current blocking and OR-ing. Use Value: t_rr = 20–40 ns and Q_rr = 9–20 nC prevent cross-conduction in redundant power paths.
Power Bank Output Stage	USB-C PD Sink Switching
Use Scenario: Output stage of single-cell Li-ion power banks delivering up to 3 A to external devices via USB-A ports. IC Role / Device Role / Timing Role: Low-side or high-side switch managing output enable/disable with minimal dropout and thermal rise. Use Value: R_thJF = 36 °C/W enables stable 3 A operation with <40 °C junction rise over ambient on 1 oz copper.	Use Scenario: VBUS switching in USB-C PD sink applications requiring 20 V tolerance and fast enable/disable response. IC Role / Device Role / Timing Role: Controlled power path switch responding to PD controller signals with sub-100 ns turn-on delay. Use Value: td(on) = 7–15 ns at 4.5 V drive ensures precise timing alignment with USB-C CC logic state transitions.

Portable Load Switching

Low-Voltage Bus Protection

Use Scenario: Power sequencing for USB-powered peripherals in smartphones and tablets, where battery voltage ranges from 3.0–4.2 V.

IC Role / Device Role / Timing Role: High-side load switch controlling power delivery to camera modules or audio codecs.

Use Value: 0.027 Ω R_DS(on) limits voltage drop to <220 mV at 8 A, preserving system efficiency and thermal margin.

Use Scenario: Isolation of 3.3 V or 5 V system buses during hot-plug events or fault conditions in industrial handhelds.

IC Role / Device Role / Timing Role: Bidirectional bus switch with integrated body diode enabling reverse-current blocking and OR-ing.

Use Value: t_rr = 20–40 ns and Q_rr = 9–20 nC prevent cross-conduction in redundant power paths.

Power Bank Output Stage

USB-C PD Sink Switching

Use Scenario: Output stage of single-cell Li-ion power banks delivering up to 3 A to external devices via USB-A ports.

IC Role / Device Role / Timing Role: Low-side or high-side switch managing output enable/disable with minimal dropout and thermal rise.

Use Value: R_thJF = 36 °C/W enables stable 3 A operation with <40 °C junction rise over ambient on 1 oz copper.

Use Scenario: VBUS switching in USB-C PD sink applications requiring 20 V tolerance and fast enable/disable response.

IC Role / Device Role / Timing Role: Controlled power path switch responding to PD controller signals with sub-100 ns turn-on delay.

Use Value: td(on) = 7–15 ns at 4.5 V drive ensures precise timing alignment with USB-C CC logic state transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3462BDV-T1-E3	R_DS(on) = 0.032 Ω @ 4.5 V; higher threshold (V_GS(th) = 0.6–1.2 V); same TSOP-6 package	Slightly reduced efficiency at high current; better noise immunity in noisy environments	Select when tighter V_GS(th) distribution or margin against false turn-on is required
DMN2020LFG-7	R_DS(on) = 0.022 Ω @ 4.5 V; 20 V rating; X1-DFN package (2 × 2 mm); no exposed drain pad	Lower on-resistance but higher R_thJA (100+ °C/W); unsuitable for >2 W continuous dissipation	Select when board space is critical and peak current <5 A; avoid for sustained 8 A loads

Compared with SI3460BDV-T1-E3, Si3462BDV-T1-E3 trades 19% higher R_DS(on) for improved gate threshold consistency, while DMN2020LFG-7 offers lower resistance in a smaller footprint but lacks the thermal robustness needed for full 8 A operation on standard PCBs.

Availability

SI3460BDV-T1-E3 is available at Aetrix Electronics and suitable for portable load switching, low-voltage bus protection, and USB-C PD sink applications requiring stable component supply and Pb-free compliance.

Supply support for SI3460BDV-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si3460BDV product line delivers logic-level N-channel MOSFETs optimized for space-constrained, battery-operated systems where low R_DS(on), fast switching, and thermal performance in TSOP-6 are essential.

FAQ

What is the maximum continuous drain current rating for SI3460BDV-T1-E3 at 70 °C case temperature?

The SI3460BDV-T1-E3 supports 7.1 A continuous drain current at T_C = 70 °C. This rating reflects package thermal limits under steady-state conditions and is validated per Vishay's absolute maximum ratings table. Derating curves in the datasheet confirm linear reduction from 8 A at 25 °C to 7.1 A at 70 °C, making SI3460BDV-T1-E3 suitable for thermally managed load-switch designs operating near ambient temperature limits.

Does SI3460BDV-T1-E3 support 1.8 V gate drive, and what is its R_DS(on) at that voltage?

Yes, SI3460BDV-T1-E3 is fully specified for 1.8 V gate drive, with R_DS(on) = 0.033–0.040 Ω at I_D = 2.5 A. This enables direct interface with modern ultra-low-voltage microcontrollers and PMICs without level shifters. The datasheet guarantees this performance across temperature and process variation, confirming SI3460BDV-T1-E3 as a true logic-level MOSFET for next-generation portable systems.

What is the thermal resistance from junction to foot (R_thJF) for SI3460BDV-T1-E3, and why does it matter?

The SI3460BDV-T1-E3 has R_thJF = 30–36 °C/W (steady-state), measured from junction to the exposed drain paddle. This parameter directly determines how much the die heats up relative to the PCB copper temperature beneath the package. For designs using large drain-area copper pours, R_thJF governs thermal performance more than R_thJA, making SI3460BDV-T1-E3 highly effective in thermally optimized layouts.

Can SI3460BDV-T1-E3 be used in reverse-conduction applications, and what body diode parameters are specified?

Yes, SI3460BDV-T1-E3 supports reverse conduction via its integrated body diode, with V_SD = 0.8–1.2 V at I_S = 5.4 A and t_rr = 20–40 ns. These values are measured under standardized conditions (I_F = 5.4 A, dI/dt = 100 A/µs, T_J = 25 °C) and confirm SI3460BDV-T1-E3's suitability for OR-ing, hot-swap, and synchronous rectification where controlled reverse recovery is required.

Is SI3460BDV-T1-E3 halogen-free, and which standard does it meet?

SI3460BDV-T1-E3 is not halogen-free; the halogen-free variant is explicitly designated as Si3460BDV-T1-GE3 per the ordering information. SI3460BDV-T1-E3 complies with RoHS Directive 2002/95/EC and is Pb-free, but does not meet IEC 61249-2-21 halogen-free requirements. Engineers selecting SI3460BDV-T1-E3 must verify end-product environmental compliance requirements before deployment.

SI3460BDV-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 27mOhm @ 5.1A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 860 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 3.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3460BDV-T1-E3 FAQ

1.How can I place an order for SI3460BDV-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3460BDV-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3460BDV-T1-E3 reliable?

The price and inventory of SI3460BDV-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3460BDV-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI3460BDV-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3460BDV-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3460BDV-T1-E3?

SI3460BDV-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3460BDV-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3460BDV-T1-E3?

For technical support, including SI3460BDV-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3460BDV-T1-E3 requirements.

6.How does Aetrix verify that SI3460BDV-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI3460BDV-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3460BDV-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI3460BDV-T1-E3?

All SI3460BDV-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3460BDV-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3460BDV-T1-E3 part is unused and in its original packaging.

Return procedure for SI3460BDV-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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