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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3460DV-T1-E3

Name: SI3460DV-T1-E3
Brand: Vishay Siliconix
SKU: SI3460DV-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3460DV-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3460DV-T1-E3.pdf

Description:: MOSFET N-CH 20V 5.1A 6TSOP

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Product details

Overview

SI3460DV-T1-E3 from Vishay Siliconix is a lead-free, halogen-free N-channel TrenchFET® power MOSFET rated for 20 V drain-source voltage, 6.8 A continuous drain current at 25 °C, and 27 mΩ R_DS(on) at V_GS = 4.5 V. It operates in low-voltage load switching applications such as USB power delivery, portable battery charging circuits, and DC-DC converter synchronous rectification.

For engineers reviewing the SI3460DV-T1-E3 datasheet, SI3460DV-T1-E3 pinout, SI3460DV-T1-E3 application, or SI3460DV-T1-E3 equivalent, key selection criteria include its 1.8 V logic-level gate drive capability, 20 nC total gate charge, TSOP-6 surface-mount package, and guaranteed 100% R_g testing for consistent switching performance.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance with fast switching characteristics. Its gate threshold voltage of 0.45 V (typical) enables reliable turn-on with low-voltage microcontroller I/O, while its 2.9 Ω maximum gate resistance supports controlled dV/dt and EMI management.

The device integrates a body diode with 0.8–1.2 V forward voltage at 1.7 A, supporting bidirectional current handling in buck converters and reverse-polarity protection circuits. Thermal resistance of 90 °C/W (junction-to-ambient, steady-state) reflects its suitability for compact PCB layouts with limited copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage for 3.3 V/5 V system-side power switches
R_DS(on) @ V_GS = 4.5 V	0.027 Ω - Enables <150 mW conduction loss at 6.3 A in high-efficiency 5 V rail switching
I_D (continuous, T_A = 25 °C)	6.8 A - Supports >30 W load switching without forced airflow in TSOP-6 footprint
Q_g	13.5–20 nC - Low gate charge allows fast turn-on with standard GPIO drivers (e.g., STM32, PIC)
V_GS(th)	0.45 V (typ) - Ensures full enhancement at 1.8 V logic levels, compatible with modern low-voltage MCUs
T_J range	−55 to +150 °C - Qualified for industrial temperature operation in automotive infotainment and PoE-powered devices

Pinout & Package

TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm × 1.0 mm profile, optimized for automated assembly and thermal relief via exposed drain pad.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Internally connected to exposed thermal pad; primary current path and heat sink interface
3	Gate (G)	Control terminal requiring ≤±8 V bias; low input capacitance enables high-frequency PWM
4	Source (S)	Reference node for gate drive; tied to power ground in high-side or low-side configurations

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 27 mΩ R_DS(on) in TSOP-6, enabling higher current density than planar MOSFETs of same size
100% R_g tested	Guarantees gate resistance ≤2.9 Ω, ensuring predictable rise/fall times and reduced gate driver stress
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated end equipment
Logic-level gate drive	Turns fully on at V_GS ≥ 2.5 V, eliminating need for level-shifters in 1.8 V/2.5 V/3.3 V control systems

Applications

USB Power Delivery Switching	Portable Battery Charger Control
Use Scenario: High-side switch in USB-C PD 5 V/3 A power path with overcurrent and reverse-voltage protection. IC Role / Device Role / Timing Role: Load switch controlling power delivery to downstream peripherals based on CC logic detection. Use Value: 27 mΩ R_DS(on) limits voltage drop to <160 mV at 6 A, preserving bus voltage margin under full load.	Use Scenario: Synchronous rectifier and battery disconnect switch in single-cell Li-ion charger IC reference designs. IC Role / Device Role / Timing Role: Bidirectional current path managing charge/discharge flow between input supply and battery terminals. Use Value: Body diode V_SD = 0.8–1.2 V ensures low-loss reverse conduction during battery discharge mode.
DC-DC Converter Synchronous Rectification	Industrial Sensor Node Power Gating
Use Scenario: Low-side synchronous rectifier in 5 V buck converter powering FPGA I/O banks or Ethernet PHYs. IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce conduction losses and improve efficiency above 85 % at 2 A load. Use Value: Q_g = 20 nC allows clean 500 kHz switching with minimal gate drive power (<1.5 mW).	Use Scenario: Always-on power gating for wireless sensor nodes using ultra-low-quiescent PMICs. IC Role / Device Role / Timing Role: Controlled enable/disable of subsystem power rails during sleep/wake cycles. Use Value: V_GS(th) = 0.45 V ensures reliable turn-off with 0.5 V gate leakage margin, preventing phantom wake-up.

USB Power Delivery Switching

Portable Battery Charger Control

Use Scenario: High-side switch in USB-C PD 5 V/3 A power path with overcurrent and reverse-voltage protection.

IC Role / Device Role / Timing Role: Load switch controlling power delivery to downstream peripherals based on CC logic detection.

Use Value: 27 mΩ R_DS(on) limits voltage drop to <160 mV at 6 A, preserving bus voltage margin under full load.

Use Scenario: Synchronous rectifier and battery disconnect switch in single-cell Li-ion charger IC reference designs.

IC Role / Device Role / Timing Role: Bidirectional current path managing charge/discharge flow between input supply and battery terminals.

Use Value: Body diode V_SD = 0.8–1.2 V ensures low-loss reverse conduction during battery discharge mode.

DC-DC Converter Synchronous Rectification

Industrial Sensor Node Power Gating

Use Scenario: Low-side synchronous rectifier in 5 V buck converter powering FPGA I/O banks or Ethernet PHYs.

IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce conduction losses and improve efficiency above 85 % at 2 A load.

Use Value: Q_g = 20 nC allows clean 500 kHz switching with minimal gate drive power (<1.5 mW).

Use Scenario: Always-on power gating for wireless sensor nodes using ultra-low-quiescent PMICs.

IC Role / Device Role / Timing Role: Controlled enable/disable of subsystem power rails during sleep/wake cycles.

Use Value: V_GS(th) = 0.45 V ensures reliable turn-off with 0.5 V gate leakage margin, preventing phantom wake-up.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2020LH-7	R_DS(on) = 22 mΩ @ 4.5 V, 6-pin SOT-23 package, slightly lower Q_g (15 nC)	Smaller footprint but lower current rating (5.5 A); less thermal mass for transient loads	Prefer when board space is constrained and peak current ≤5.5 A
AO3400	R_DS(on) = 28 mΩ @ 4.5 V, same TSOP-6, higher V_GS(th) (0.7 V min)	Less robust 1.8 V drive compatibility; may not fully enhance with weak GPIO sources	Acceptable where gate drive is ≥2.5 V and cost sensitivity outweighs margin requirements

Compared with DMN2020LH-7 and AO3400, the SI3460DV-T1-E3 offers superior 1.8 V drive assurance and tighter R_g control-critical for deterministic timing in battery-powered edge nodes-while maintaining identical TSOP-6 layout compatibility.

Availability

SI3460DV-T1-E3 is available at Aetrix Electronics and suitable for USB power delivery, portable battery charging, and DC-DC converter synchronous rectification requiring stable component supply across production ramp and long-life industrial programs.

Supply support for SI3460DV-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and power efficiency.

The Si3460DV-T1-E3 belongs to Vishay's TrenchFET® logic-level MOSFET product line, engineered for low-voltage, high-current switching in space-constrained portable and industrial power systems.

FAQ

What is the maximum continuous drain current for SI3460DV-T1-E3 at 70 °C ambient?

The SI3460DV-T1-E3 supports 5.4 A continuous drain current at T_A = 70 °C with no derating applied, verified per Vishay Document 71329 Rev. D. This value assumes standard FR4 PCB mounting (1" × 1") and accounts for thermal resistance R_thJA = 90 °C/W. At this condition, junction temperature remains within the 150 °C limit when dissipating 1.3 W.

Does SI3460DV-T1-E3 require a gate resistor for typical 3.3 V MCU GPIO driving?

Yes, a series gate resistor (typically 10–47 Ω) is recommended with SI3460DV-T1-E3 when driven by 3.3 V MCU GPIO to dampen ringing and limit peak gate current. The SI3460DV-T1-E3's 2.9 Ω max R_g and 20 nC Q_g make it sensitive to fast edges; uncontrolled switching can cause overshoot exceeding ±8 V V_GS rating or induce EMI in adjacent analog traces.

Can SI3460DV-T1-E3 be used in high-side switching configurations?

Yes, SI3460DV-T1-E3 supports high-side switching when paired with a gate driver capable of providing V_GS ≥ 4.5 V relative to the source node. Its 20 V V_DS rating and 100% R_g test ensure predictable timing in bootstrap-based high-side topologies, though external level-shifting or dedicated high-side drivers are required for proper gate biasing.

Is SI3460DV-T1-E3 suitable for reverse polarity protection?

Yes, SI3460DV-T1-E3 is commonly used in reverse polarity protection circuits due to its low R_DS(on) and integrated body diode. When placed in the positive rail with source toward load, the SI3460DV-T1-E3 blocks reverse current while conducting forward current with <160 mV drop at 6 A, outperforming Schottky diodes in both voltage headroom and thermal performance.

What is the thermal resistance from junction to foot (R_thJF) for SI3460DV-T1-E3?

The SI3460DV-T1-E3 has a maximum junction-to-foot thermal resistance of 30 °C/W under steady-state conditions, per Vishay Document 71329. This parameter reflects heat transfer from the die directly to the exposed drain pad, making it critical for designs using thermal vias under the TSOP-6 footprint to enhance heatsinking to internal ground planes.

SI3460DV-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 5.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 27mOhm @ 5.1A, 4.5V

Vgs(th) (Max) @ Id:: 450mV @ 1mA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3460DV-T1-E3 FAQ

1.How can I place an order for SI3460DV-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3460DV-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3460DV-T1-E3 reliable?

The price and inventory of SI3460DV-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3460DV-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI3460DV-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3460DV-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3460DV-T1-E3?

SI3460DV-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3460DV-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3460DV-T1-E3?

For technical support, including SI3460DV-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3460DV-T1-E3 requirements.

6.How does Aetrix verify that SI3460DV-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI3460DV-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3460DV-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI3460DV-T1-E3?

All SI3460DV-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3460DV-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3460DV-T1-E3 part is unused and in its original packaging.

Return procedure for SI3460DV-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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