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Vishay Siliconix SI3460DV-T1-GE3
- Part No.:
- SI3460DV-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3460DV-T1-GE3.pdf
- Description:
- MOSFET N-CH 20V 5.1A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:8,184
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Product details
Overview
SI3460DV-T1-GE3 from Vishay Siliconix is a lead-free and halogen-free N-channel TrenchFET® power MOSFET rated for 20 V drain-source voltage, 6.8 A continuous drain current at 25 °C, and 0.027 Ω RDS(on) at VGS = 4.5 V. It serves as a high-efficiency load switch in compact DC-DC converter output stages and USB power delivery circuits.
For engineers reviewing the SI3460DV-T1-GE3 datasheet, SI3460DV-T1-GE3 pinout, SI3460DV-T1-GE3 application, or SI3460DV-T1-GE3 equivalent, key selection criteria include its low gate threshold (0.45 V typ), 100% Rg tested gate resistance, TSOP-6 package thermal performance (RthJA = 90 °C/W steady state), and verified operation down to 1.8 V logic drive.
Technical Context
This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance with fast switching characteristics: total gate charge is 13.5–20 nC, turn-on delay is 15–30 ns, and rise time is 30–60 ns under standard test conditions (VDD = 10 V, Rg = 6 Ω). Its gate threshold voltage of 0.45 V enables reliable turn-on with 1.8 V microcontroller I/O.
The device integrates a body diode with 0.8–1.2 V forward voltage at 1.7 A and exhibits robust thermal behavior: maximum junction temperature is 150 °C, and junction-to-foot thermal resistance is 25–30 °C/W, supporting high-density PCB layouts where drain-side heat sinking is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Supports input rails up to 16 V DC with 25 % safety margin per JEDEC stress guidelines. |
| RDS(on) | 0.027 Ω at VGS = 4.5 V, ID = 5.1 A - Enables ≤ 0.7 W conduction loss at 5 A, critical for thermally constrained USB PD designs. |
| ID (continuous) | 6.8 A at TA = 25 °C - Sustains full-load current in 1" × 1" FR4 layouts without forced air. |
| VGS(th) | 0.45 V typ - Guarantees turn-on with 1.8 V logic, eliminating need for level-shifting in low-voltage MCU interfaces. |
| Qg | 13.5–20 nC - Enables efficient 1–2 MHz switching in synchronous buck converters with moderate gate driver strength. |
| RthJA | 90 °C/W (steady state) - Predicts ~135 °C junction rise at 1.5 W dissipation in standard surface-mount layout. |
Pinout & Package
TSOP-6 package: 3.05 mm × 2.85 mm × 1.0 mm profile, JEDEC MO-193C compliant, with exposed drain pad for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Internally connected to exposed copper pad; primary current path and thermal conduction path to PCB. |
| 3 | Gate (G) | Control terminal requiring < 100 nA leakage; sensitive to ESD but compatible with 1.8 V CMOS logic thresholds. |
| 4 | Source (S) | Reference node for gate drive; tied to power ground plane; carries return current for body diode conduction. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® construction | Delivers 20 % lower RDS(on) vs. planar MOSFETs at same die size, enabling smaller footprint for given current rating. |
| 100 % Rg tested | Ensures gate resistance between 0.5–2.9 Ω across all units, guaranteeing consistent switching timing and EMI behavior. |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and EU Directive 2002/95/EC, supporting environmentally regulated industrial and medical end equipment. |
| Low VGS(th) dispersion | 0.45 V typical with ±0.1 V variation over -55 to 150 °C, enabling stable biasing in wide-temperature automotive modules. |
Applications
| USB Power Delivery Switch | Load Switch in Wearable Sensors |
|---|---|
Use Scenario: Hot-swap control of 5 V/3 A USB-C power path in portable docking stations. IC Role / Device Role / Timing Role: Low-side load switch enabling controlled inrush current and fault isolation. Use Value: 0.027 Ω RDS(on) limits voltage drop to < 150 mV at 5.5 A, preserving bus regulation while dissipating < 0.8 W. |
Use Scenario: Power gating of BLE SoC and MEMS sensor subsystems in battery-powered hearables. IC Role / Device Role / Timing Role: High-efficiency enable switch driven directly by 1.8 V GPIO without level shifter. Use Value: 0.45 V gate threshold ensures > 99 % duty-cycle operation at 1.8 V supply, minimizing standby leakage. |
| Synchronous Buck Converter High-Side | Industrial I/O Module Protection |
Use Scenario: High-side switch in 12 V input, 3.3 V/6 A output DC-DC converter for FPGA core rails. IC Role / Device Role / Timing Role: Fast-switching power stage with 30 ns turn-off delay and 60 ns fall time. Use Value: 20 nC total gate charge allows clean 1 MHz switching with 1 A peak gate driver, reducing dead-time losses. |
Use Scenario: Reverse-polarity and overcurrent protection for 24 V fieldbus inputs in PLC analog modules. IC Role / Device Role / Timing Role: Low-RDS(on) series pass element with integrated body diode for bidirectional clamping. Use Value: 0.8–1.2 V body diode forward voltage limits clamp energy during transients, protecting downstream ADC front-ends. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | RDS(on) = 0.024 Ω at 4.5 V but rated only for 4.5 A continuous; no 1.8 V drive validation. | Lower current rating limits use in > 4 A USB PD sinks; lacks halogen-free certification. | Prefer SI3460DV-T1-GE3 for 5–6 A loads or halogen-free compliance requirements. |
| AO3400 | RDS(on) = 0.028 Ω at 4.5 V; VGS(th) = 0.7–1.4 V - requires ≥ 2.5 V logic for guaranteed turn-on. | Not suitable for direct 1.8 V MCU drive; higher threshold increases risk of partial turn-on in low-voltage systems. | Select SI3460DV-T1-GE3 when interfacing with 1.8 V or 2.5 V microcontrollers without level shifters. |
Compared with DMN2004LK-7 and AO3400, the SI3460DV-T1-GE3 uniquely combines 6.8 A current capability, 0.45 V gate threshold, halogen-free construction, and TSOP-6 thermal performance-making it optimal for space-constrained, low-voltage, high-reliability load switching.
Availability
SI3460DV-T1-GE3 is available at Aetrix Electronics and suitable for USB power delivery modules, wearable sensor power management, and industrial I/O protection circuits requiring stable component supply and long-term manufacturability.
Supply support for SI3460DV-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on efficiency, reliability, and miniaturization.
The Si3460DV belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-current, low-voltage switching in portable and space-constrained power systems.
FAQ
What is the maximum continuous drain current for SI3460DV-T1-GE3 at 70 °C ambient?
The SI3460DV-T1-GE3 supports 5.4 A continuous drain current at TA = 70 °C on a 1" × 1" FR4 board, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOP-6 package without heatsinking or airflow, and must be validated against actual PCB layout and copper area.
Does SI3460DV-T1-GE3 support 1.8 V logic-level gate drive?
Yes, the SI3460DV-T1-GE3 has a typical gate threshold voltage of 0.45 V and guaranteed RDS(on) of 0.038 Ω at VGS = 1.8 V and ID = 2 A. This enables full enhancement with 1.8 V CMOS outputs, eliminating external level shifters in ultra-low-voltage applications.
What is the thermal resistance from junction to ambient for SI3460DV-T1-GE3?
The SI3460DV-T1-GE3 has a maximum junction-to-ambient thermal resistance (RthJA) of 110 °C/W under steady-state conditions on a 1" × 1" FR4 board. The typical value is 90 °C/W, which is used for thermal design calculations when estimating junction temperature rise under known power dissipation.
Is SI3460DV-T1-GE3 pin-compatible with other TSOP-6 N-channel MOSFETs?
No documented pin-to-pin compatibility exists between SI3460DV-T1-GE3 and other TSOP-6 MOSFETs. While the physical pinout (Drain-Gate-Source-Drain-Drain-Drain) matches JEDEC MO-193C, electrical characteristics-including gate threshold, RDS(on), and safe operating area-differ significantly across vendors and families.
What does "Halogen-free according to IEC 61249-2-21" mean for SI3460DV-T1-GE3?
For SI3460DV-T1-GE3, halogen-free compliance means bromine and chlorine content are each below 900 ppm, and total halogens are below 1500 ppm by weight, per IEC 61249-2-21. This reduces toxic gas emission during PCB recycling or fire events, meeting stringent environmental requirements in EU and Asian markets.
SI3460DV-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 27mOhm @ 5.1A, 4.5V
- Vgs(th) (Max) @ Id:
- 450mV @ 1mA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SI3460DV-T1-GE3 FAQ
1.How can I place an order for SI3460DV-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3460DV-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3460DV-T1-GE3 reliable?
The price and inventory of SI3460DV-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3460DV-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI3460DV-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3460DV-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3460DV-T1-GE3?
SI3460DV-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3460DV-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3460DV-T1-GE3?
For technical support, including SI3460DV-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3460DV-T1-GE3 requirements.
6.How does Aetrix verify that SI3460DV-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI3460DV-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3460DV-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI3460DV-T1-GE3?
All SI3460DV-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3460DV-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3460DV-T1-GE3 part is unused and in its original packaging.
Return procedure for SI3460DV-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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