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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3469DV-T1-BE3

Name: SI3469DV-T1-BE3
Brand: Vishay Siliconix
SKU: SI3469DV-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3469DV-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3469DV-T1-BE3.pdf

Description:: P-CHANNEL 20-V (D-S) MOSFET

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Product details

Overview

SI3469DV-T1-BE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for high-efficiency load switching in portable computing and consumer electronics. It features -20 V drain-source voltage rating, 0.030 Ω R_DS(on) at V_GS = -10 V, -6.7 A continuous drain current (T_A = 25 °C), and TSOP-6 surface-mount package optimized for thermal performance in space-constrained notebook PC power rails.

For engineers reviewing the SI3469DV-T1-BE3 datasheet, SI3469DV-T1-BE3 pinout, SI3469DV-T1-BE3 application, or SI3469DV-T1-BE3 equivalent, this device is selected for low-voltage, high-current DC load switching where gate drive compatibility with 3.3 V/5 V logic, tight R_DS(on) tolerance, and robust pulsed current capability (-25 A) are critical design requirements.

Technical Context

This MOSFET employs TrenchFET® technology to achieve low on-resistance and fast switching dynamics. Its gate threshold voltage of -1.0 V to -3.0 V ensures reliable turn-on with standard logic-level gate drivers, while the integrated body diode supports bidirectional current flow in synchronous buck or OR-ing configurations.

The TSOP-6 package integrates four parallel drain terminals (pins 1, 2, 5, 6) to minimize thermal resistance (R_thJF = 25–30 °C/W) and maximize power dissipation (1.14 W steady-state at T_A = 70 °C). The device operates across -55 °C to +150 °C junction temperature range and meets RoHS and halogen-free compliance per IEC 61249-2-21.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for 3.3 V/5 V system rail protection and battery-side switching
R_DS(on)	0.030 Ω @ V_GS = -10 V - Enables <100 mW conduction loss at 6.7 A, critical for thermal budget in thin notebooks
I_D (continuous)	-6.7 A @ T_A = 25 °C - Supports high-current peripheral loads such as USB-C PD controllers or display backlight drivers
Q_g	20–30 nC - Low gate charge enables efficient 1–2 MHz switching in compact DC-DC post-regulators
V_GS(th)	-1.0 to -3.0 V - Ensures full enhancement with 3.3 V microcontroller GPIO without level-shifting circuitry
T_J range	-55 to +150 °C - Qualified for extended-temperature operation in game machines and industrial embedded systems
P_D	1.14 W @ T_A = 70 °C - Specifies maximum power dissipation under real-world board thermal conditions

Pinout & Package

TSOP-6 surface-mount package with exposed drain paddle for enhanced thermal transfer. Dimensions: 3.05 mm × 2.85 mm × 1.0 mm (JEDEC MO-193C). Four drain pins share thermal and electrical connection to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Electrically and thermally tied together; must be connected to large copper area for heat spreading and low-impedance current return path
4	Source (S)	Main current return node; connects to system ground or negative rail; body diode anode
3	Gate (G)	Control input requiring <30 nC total charge; sensitive to ESD; requires series resistor for ringing suppression in high-dI/dt applications

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 24% lower R_DS(on) vs. planar P-channel MOSFETs at same die size, enabling smaller footprint for equivalent current handling
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - required for CE-marked portable electronics sold in EU markets
Low V_GS(th) distribution	-1.0 V min threshold ensures guaranteed turn-on with 3.3 V logic; tight -3.0 V max avoids unintended conduction during brown-out
High pulsed current rating	-25 A single-pulse capability supports inrush current limiting during hot-swap events in desktop and docking station designs
Optimized for reflow	Qualified per JEDEC J-STD-020; withstands peak reflow temperature of 240 °C for 20–40 s without parametric shift or delamination

Applications

Notebook PC Load Switch	Game Machine Power Sequencing
Use Scenario: Isolating SSD or discrete GPU power domains during sleep/wake transitions to reduce standby current. IC Role / Device Role / Timing Role: High-side load switch controlling 3.3 V or 5 V auxiliary rails with fast turn-off (<75 ns fall time) to meet ACPI S3/S4 timing. Use Value: Achieves <5 µA off-state leakage (IDSS ≤ -1 µA) and eliminates cross-conduction risk via precise -3.0 V VGS(th) upper limit.	Use Scenario: Enabling/disabling RGB lighting subsystems or audio amplifiers based on user activity detection. IC Role / Device Role / Timing Role: Logic-controlled power gate with 15 ns turn-on delay ensuring clean power-up sequencing before FPGA configuration. Use Value: 0.051 Ω R_DS(on) @ V_GS = -4.5 V guarantees <120 mW loss at 1.5 A LED driver load, minimizing thermal impact on plastic housing.
Desktop Motherboard VRM Auxiliary Switch	USB-C Power Delivery OR-ing
Use Scenario: Providing independent enable control for PCIe slot auxiliary power (12 V or 3.3 V) to support hot-plug compliance. IC Role / Device Role / Timing Role: Low-R_DS(on) high-side switch placed between VRM output and connector, driven by southbridge GPIO. Use Value: 0.030 Ω on-resistance limits voltage drop to <200 mV at 6.7 A, preserving tight ±3% regulation margin for PCIe Gen5 devices.	Use Scenario: Bidirectional OR-ing of dual USB-C ports to maintain system power during cable swap without interruption. IC Role / Device Role / Timing Role: Reverse-blocking P-channel switch leveraging intrinsic body diode forward voltage (VSD = -0.8 to -1.2 V) for passive path selection. Use Value: Integrated source-drain diode eliminates need for external Schottky, reducing BOM count while maintaining <1.2 V forward drop at 1.7 A.

Notebook PC Load Switch

Game Machine Power Sequencing

Use Scenario: Isolating SSD or discrete GPU power domains during sleep/wake transitions to reduce standby current.

IC Role / Device Role / Timing Role: High-side load switch controlling 3.3 V or 5 V auxiliary rails with fast turn-off (<75 ns fall time) to meet ACPI S3/S4 timing.

Use Value: Achieves <5 µA off-state leakage (IDSS ≤ -1 µA) and eliminates cross-conduction risk via precise -3.0 V VGS(th) upper limit.

Use Scenario: Enabling/disabling RGB lighting subsystems or audio amplifiers based on user activity detection.

IC Role / Device Role / Timing Role: Logic-controlled power gate with 15 ns turn-on delay ensuring clean power-up sequencing before FPGA configuration.

Use Value: 0.051 Ω R_DS(on) @ V_GS = -4.5 V guarantees <120 mW loss at 1.5 A LED driver load, minimizing thermal impact on plastic housing.

Desktop Motherboard VRM Auxiliary Switch

USB-C Power Delivery OR-ing

Use Scenario: Providing independent enable control for PCIe slot auxiliary power (12 V or 3.3 V) to support hot-plug compliance.

IC Role / Device Role / Timing Role: Low-R_DS(on) high-side switch placed between VRM output and connector, driven by southbridge GPIO.

Use Value: 0.030 Ω on-resistance limits voltage drop to <200 mV at 6.7 A, preserving tight ±3% regulation margin for PCIe Gen5 devices.

Use Scenario: Bidirectional OR-ing of dual USB-C ports to maintain system power during cable swap without interruption.

IC Role / Device Role / Timing Role: Reverse-blocking P-channel switch leveraging intrinsic body diode forward voltage (VSD = -0.8 to -1.2 V) for passive path selection.

Use Value: Integrated source-drain diode eliminates need for external Schottky, reducing BOM count while maintaining <1.2 V forward drop at 1.7 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3467DV-T1-BE3	Higher R_DS(on) (0.042 Ω @ -10 V), lower ID (-5.0 A), identical TSOP-6 footprint	Suitable for lower-current peripherals (e.g., card readers) where thermal margin is less constrained	Select when cost sensitivity outweighs 15% R_DS(on) penalty and peak current stays below 5 A.
DMN3026LFG-7	Lower V_DS (-30 V), higher R_DS(on) (0.045 Ω @ -10 V), same 6-pin TSOP package	Better suited for 12 V industrial I/O modules requiring higher breakdown margin	Choose only if system rail exceeds 20 V or long-term reliability under overvoltage transients is prioritized over conduction loss.

Compared with Si3467DV-T1-BE3 and DMN3026LFG-7, the SI3469DV-T1-BE3 delivers optimal balance of low on-resistance, logic-level gate drive, and thermal performance for 3.3–5 V portable computing loads - making it the preferred choice where efficiency and board space are co-constrained.

Availability

SI3469DV-T1-BE3 is available at Aetrix Electronics and suitable for notebook PC, game machine, and desktop motherboard applications requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support for consumer electronics programs.

Supply support for SI3469DV-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI3469DV-T1-BE3 belongs to Vishay's TrenchFET® P-channel portfolio, engineered specifically for low-voltage load switching in portable and high-density computing platforms where thermal management and gate-drive simplicity are critical.

FAQ

What is the maximum continuous drain current for SI3469DV-T1-BE3 at 70 °C ambient temperature?

The SI3469DV-T1-BE3 supports -5.3 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table. This value accounts for derating due to reduced thermal headroom and must be verified against actual board layout using the provided R_thJA = 90–110 °C/W data. SI3469DV-T1-BE3 performance remains stable within this limit when mounted on a 1" × 1" FR4 board with recommended copper pour.

Does SI3469DV-T1-BE3 require a gate pull-down resistor in typical load-switch applications?

Yes, SI3469DV-T1-BE3 requires an external gate pull-down resistor (typically 10–100 kΩ) to ensure the MOSFET remains fully off during MCU reset or floating GPIO states. Its V_GS(th) range of -1.0 V to -3.0 V means even small leakage or noise on the gate line could cause partial turn-on. SI3469DV-T1-BE3 gate capacitance (Q_g = 20–30 nC) makes it susceptible to coupling without proper biasing.

Can SI3469DV-T1-BE3 be used in reverse polarity protection circuits?

Yes, SI3469DV-T1-BE3 is commonly deployed in reverse polarity protection due to its P-channel topology and -20 V V_DS rating. When placed in the high-side position with source tied to input and drain to load, it blocks reverse voltage while conducting forward current with minimal drop. SI3469DV-T1-BE3 body diode orientation supports this function without external components, provided input voltage stays within rated limits.

What is the safe operating area (SOA) limitation for SI3469DV-T1-BE3 during pulse conditions?

The SI3469DV-T1-BE3 SOA curve shows it is limited by R_DS(on) at low V_DS, by peak pulse current (-25 A) at mid V_DS, and by V_DS breakdown (-20 V) at high voltage. For 100 µs pulses, it sustains up to -15 A at -10 V; for 1 ms pulses, limit drops to -8 A. SI3469DV-T1-BE3 must not operate beyond these boundaries to avoid thermal runaway or avalanche failure.

Is SI3469DV-T1-BE3 compatible with lead-free reflow soldering processes?

Yes, SI3469DV-T1-BE3 is qualified for lead-free reflow per JEDEC J-STD-020, supporting peak temperatures up to 240 °C for 20–40 seconds. Its TSOP-6 package passes thermal cycling and reliability testing after exposure to standard Pb-free profiles. SI3469DV-T1-BE3 is supplied in tape-and-reel format with moisture sensitivity level (MSL) 1, eliminating bake requirements prior to assembly.

SI3469DV-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 30mOhm @ 6.7A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.14W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3469DV-T1-BE3 FAQ

1.How can I place an order for SI3469DV-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3469DV-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3469DV-T1-BE3 reliable?

The price and inventory of SI3469DV-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3469DV-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI3469DV-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3469DV-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3469DV-T1-BE3?

SI3469DV-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3469DV-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3469DV-T1-BE3?

For technical support, including SI3469DV-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3469DV-T1-BE3 requirements.

6.How does Aetrix verify that SI3469DV-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI3469DV-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3469DV-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI3469DV-T1-BE3?

All SI3469DV-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3469DV-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3469DV-T1-BE3 part is unused and in its original packaging.

Return procedure for SI3469DV-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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