My Inquiry
My Account
Vishay Siliconix SI3469DV-T1-GE3
- Part No.:
- SI3469DV-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3469DV-T1-GE3.pdf
- Description:
- MOSFET P-CH 20V 5A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:15
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI3469DV-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -20 V drain-source voltage, 0.030 Ω RDS(on) at VGS = -10 V and -6.7 A continuous drain current, designed for high-efficiency load switching in portable computing power rails.
For engineers reviewing the SI3469DV-T1-GE3 datasheet, SI3469DV-T1-GE3 pinout, SI3469DV-T1-GE3 application, or SI3469DV-T1-GE3 equivalent, this device is evaluated for low-voltage DC-DC output stage control, notebook PC battery path management, and compact high-side switch designs requiring halogen-free and RoHS-compliant packaging.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance with fast switching characteristics, including 20 nC total gate charge and 15 ns turn-on delay under standard test conditions. Its negative threshold voltage (-1.0 to -3.0 V) ensures reliable enhancement-mode operation with logic-level gate drive compatibility down to -4.5 V.
The TSOP-6 package integrates four parallel drain terminals (pins 1, 2, 5, 6) for low thermal resistance (RthJF = 25–30 °C/W), while the source (pin 4) and gate (pin 3) are isolated for unidirectional high-side switching. Built-in body diode supports reverse-current blocking in load-switch configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum drain-source blocking voltage for 3.3 V/5 V system rail protection |
| RDS(on) | 0.030 Ω @ VGS = -10 V - Enables <100 mW conduction loss at 6.7 A load current |
| ID (continuous) | -6.7 A @ TA = 25 °C - Supports typical notebook CPU/GPU rail load switching |
| VGS(th) | -1.0 to -3.0 V - Ensures full enhancement with standard -3.3 V or -5 V gate drivers |
| Qg | 20–30 nC - Determines gate drive power requirement for 100 kHz–1 MHz switching |
| RthJA | 90 °C/W (steady state) - Requires ≥1 cm² copper pour for ≤100 °C junction rise at full load |
| VSD | -0.8 to -1.2 V - Defines forward voltage drop during body diode conduction in reverse-bias scenarios |
Pinout & Package
TSOP-6 surface-mount package with exposed drain paddle; dimensions 3.05 mm × 2.85 mm × 1.0 mm (JEDEC MO-193C). Four drain pins share thermal and electrical connection to PCB copper plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Parallel-connected high-current output node; primary thermal path to PCB copper |
| 3 | Gate (G) | Control input requiring -10 V or -4.5 V drive; 9 Ω internal gate resistance limits dV/dt |
| 4 | Source (S) | Reference node for gate drive; connects to system ground or positive rail in high-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 30% lower RDS(on) vs. planar P-channel MOSFETs at same die size and voltage rating |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated end equipment |
| Low gate charge (20–30 nC) | Reduces driver power consumption and enables efficient 500 kHz+ PWM control without external gate buffers |
| Four-drain-pin thermal design | Enables 1.14 W steady-state power dissipation on 1" × 1" FR4 board without heatsink |
| Specified RDS(on) at -4.5 V | Guarantees 0.051 Ω on-resistance for direct interface with 3.3 V logic or microcontroller GPIO |
Applications
| Notebook PC Load Switch | Game Machine Power Sequencing |
|---|---|
Use Scenario: Hot-swap isolation of secondary battery or auxiliary rail during system boot and sleep transitions. IC Role / Device Role / Timing Role: High-side P-channel switch controlling 5 V or 3.3 V domain enablement with controlled slew rate. Use Value: Prevents inrush current spikes exceeding 2 A and eliminates cross-conduction risk during rail sequencing. | Use Scenario: Dynamic power gating of GPU memory subsystem based on real-time workload detection. IC Role / Device Role / Timing Role: Load switch enabling/disabling DDR3/DDR4 VDDQ supply under firmware control. Use Value: Achieves >95% standby efficiency by eliminating quiescent leakage through powered-down memory banks. |
| Desktop Motherboard VRM Output Stage | USB-C PD Source Path Control |
Use Scenario: Secondary output stage for CPU core voltage tracking in multi-phase buck converter systems. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in low-side position with integrated body diode recovery. Use Value: Reduces conduction loss by 40% compared to Schottky diode solution at 5 A load, lowering thermal footprint. | Use Scenario: Reverse-polarity protection and source-enable control in USB-C power delivery sink adapters. IC Role / Device Role / Timing Role: Bidirectional blocking switch isolating VBUS from internal DC-DC when no valid PD contract exists. Use Value: Meets USB-IF compliance for <1 µA off-state leakage and withstands ±20 V transients per Type-C specification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si3467DV-T1-GE3 | Higher RDS(on) (0.042 Ω @ -4.5 V), same TSOP-6 package and -20 V rating | Suitable for lower-current (<4 A) applications where cost optimization outweighs on-loss sensitivity | Select when thermal budget allows higher conduction loss and gate drive voltage is stable at -4.5 V |
| DMN2020LFG-7 | Lower VDS (-20 V), higher ID (-7.5 A), but 0.055 Ω RDS(on) @ -4.5 V and different 6-DFN package | Requires PCB layout revision due to DFN footprint and lacks halogen-free certification | Choose only if higher peak current capability is critical and environmental compliance is not required |
Compared with SI3469DV-T1-GE3, Si3467DV-T1-GE3 trades 17% higher RDS(on) for lower unit cost, while DMN2020LFG-7 offers greater current headroom at the expense of thermal performance and regulatory compliance-neither is pin-compatible, requiring layout changes.
Availability
SI3469DV-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC power management, game machine load switching, and desktop motherboard VRM applications requiring stable component supply and halogen-free manufacturing compliance.
Supply support for SI3469DV-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global semiconductor manufacturer specializing in discrete power devices, precision resistors, and sensors, with over 50 years of power MOSFET innovation.
The Si3469DV product line targets space-constrained, high-efficiency DC power distribution in portable electronics, emphasizing low RDS(on), logic-level gate drive, and environmentally compliant packaging.
FAQ
What is the maximum continuous drain current for SI3469DV-T1-GE3 at 70 °C ambient temperature?
The SI3469DV-T1-GE3 supports -5.3 A continuous drain current at TA = 70 °C with proper PCB copper area. This value is derived from derating curves in the datasheet and assumes mounting on a 1" × 1" FR4 board with minimum recommended pad layout per AN823. Exceeding this current without enhanced thermal management risks junction temperature exceeding 150 °C.
Does SI3469DV-T1-GE3 support gate drive from a 3.3 V microcontroller GPIO?
Yes, SI3469DV-T1-GE3 is fully specified for operation at VGS = -4.5 V, delivering 0.051 Ω RDS(on) at -2 A. When driven by a 3.3 V GPIO (with level-shifter or inverted logic), it achieves functional enhancement with acceptable on-resistance-though optimal performance requires -4.5 V or lower gate voltage referenced to source.
What is the thermal resistance from junction to foot (RthJF) for SI3469DV-T1-GE3?
The SI3469DV-T1-GE3 has a maximum junction-to-foot thermal resistance of 30 °C/W under steady-state conditions. This parameter reflects heat transfer from die to the exposed drain paddle, and is critical for estimating temperature rise when the device is soldered directly to large copper planes on the PCB.
Can SI3469DV-T1-GE3 be used in bidirectional current applications?
No, SI3469DV-T1-GE3 is a unidirectional P-channel MOSFET optimized for high-side load switching. Its body diode conducts only from source to drain, and the device lacks symmetric breakdown ratings or gate-controlled reverse conduction capability. For bidirectional use, discrete back-to-back MOSFET configurations or dedicated bidirectional switches are required.
Is SI3469DV-T1-GE3 qualified for reflow soldering per JEDEC J-STD-020?
Yes, SI3469DV-T1-GE3 is qualified for lead-free reflow soldering with a peak temperature of 240 °C ±5 °C for 20–40 seconds, matching JEDEC J-STD-020 moisture sensitivity level 1 requirements. The device undergoes preconditioning and reliability testing per Vishay's internal qualification standards documented in AN823.
SI3469DV-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 6.7A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.14W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SI3469DV-T1-GE3 FAQ
1.How can I place an order for SI3469DV-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3469DV-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3469DV-T1-GE3 reliable?
The price and inventory of SI3469DV-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3469DV-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI3469DV-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3469DV-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3469DV-T1-GE3?
SI3469DV-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3469DV-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3469DV-T1-GE3?
For technical support, including SI3469DV-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3469DV-T1-GE3 requirements.
6.How does Aetrix verify that SI3469DV-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI3469DV-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3469DV-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI3469DV-T1-GE3?
All SI3469DV-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3469DV-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3469DV-T1-GE3 part is unused and in its original packaging.
Return procedure for SI3469DV-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI3469DV-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
