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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3473CDV-T1-E3

Name: SI3473CDV-T1-E3
Brand: Vishay Siliconix
SKU: SI3473CDV-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3473CDV-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3473CDV-T1-E3.pdf

Description:: MOSFET P-CH 12V 8A 6TSOP

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Product details

Overview

SI3473CDV-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET optimized for PWM load switching in space-constrained DC-DC and battery-powered systems, featuring -12 V V_DS, 0.022 Ω R_DS(on) at -4.5 V V_GS, 8 A continuous drain current, and TSOP-6 surface-mount package - deployed in portable power management and RF front-end PA switching.

For engineers reviewing the SI3473CDV-T1-E3 datasheet, SI3473CDV-T1-E3 pinout, SI3473CDV-T1-E3 application, or SI3473CDV-T1-E3 equivalent, this page delivers verified electrical parameters, thermal performance data, validated TSOP-6 terminal mapping, and real-world load-switching use cases - all grounded in Vishay's S09-0660-Rev. C specification.

Technical Context

This device uses trench-gate silicon technology to achieve low gate charge (26 nC typ. at -4.5 V) and fast switching (t_r = 15–25 ns, t_f = 35–55 ns), enabling high-efficiency synchronous rectification and pulse-width modulated power control. Its negative threshold voltage (-0.4 to -1.0 V) ensures reliable turn-on with standard logic-level gate drivers.

The integrated body diode supports bidirectional current flow in buck converters and reverse-polarity protection circuits, with V_SD = -0.8 to -1.2 V at -5.9 A and t_rr = 50–75 ns - critical for minimizing shoot-through loss and improving transient response in compact DC/DC modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-12 V - maximum blocking voltage compatible with 3.3 V/5 V logic-supplied systems and single-cell Li-ion battery rails.
R_DS(on) @ -4.5 V	0.022 Ω - enables ≤1.4 W conduction loss at 8 A, supporting thermally constrained PCB layouts without heatsinking.
Q_g (typ.)	26 nC - reduces gate drive power and allows use with low-current microcontroller GPIOs in battery-operated designs.
I_D (continuous)	-8 A @ T_C = 25 °C - sustains full-rated current when mounted on 1" × 1" FR4, per Vishay's thermal test condition.
R_thJA (max)	62.5 °C/W - defines worst-case junction-to-ambient rise under still-air conditions, guiding thermal pad design and airflow requirements.
V_GS(th)	-0.4 to -1.0 V - ensures robust turn-on with 1.8 V or higher logic outputs, eliminating need for level-shifting circuitry.
C_iss	2010 pF - impacts gate driver sizing and EMI filtering in high-frequency switching applications up to 1 MHz.

Pinout & Package

TSOP-6 package: 2.95–3.10 mm × 2.70–2.98 mm × 0.91–1.10 mm height, with exposed drain paddle for thermal enhancement. Pin 1–2–5–6 are internally connected to drain; Pin 3 is gate; Pin 4 is source.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	High-current output node; electrically tied to exposed thermal pad - must be soldered to large copper pour for thermal dissipation.
3	Gate (G)	Control input requiring <26 nC charge; sensitive to ESD - requires series resistor (≥10 Ω) and local bypass capacitor near IC.
4	Source (S)	Reference node for gate drive; connects to system ground or floating rail - determines common-mode voltage of control signal.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 25% lower R_DS(on) vs. planar P-channel MOSFETs at same die size - critical for miniaturized power stages.
PWM-optimized switching	26 nC Q_g and 15–25 ns rise time enable >500 kHz operation with minimal gate drive loss in DC/DC controllers.
Low V_GS(th) range	-0.4 to -1.0 V threshold supports direct interface with 1.8 V, 2.5 V, and 3.3 V microcontrollers - no external level shifter needed.
Integrated body diode	V_SD = -0.8 to -1.2 V at -5.9 A with 50–75 ns t_rr - suitable for freewheeling in synchronous buck topologies without external Schottky.
Lead (Pb)-free & halogen-free	Meets RoHS 2011/65/EU and JEDEC J-STD-020 reflow profile - qualified for lead-free assembly up to 260 °C peak temperature.

Applications

Portable Load Switching	RF Power Amplifier Switching
Use Scenario: Enabling/disabling power to USB peripherals or sensors in battery-powered IoT nodes with strict quiescent current budgets. IC Role / Device Role / Timing Role: High-side load switch controlling V_OUT rail; operates in linear or saturated mode during transitions. Use Value: 0.022 Ω R_DS(on) limits dropout to <175 mV at 8 A, preserving battery runtime while supporting hot-swap capability.	Use Scenario: Isolating RF power amplifier stages during transmit/receive state changes in cellular handsets and Wi-Fi modules. IC Role / Device Role / Timing Role: Fast-switching PA enable/disconnect element; driven by baseband processor GPIO with <25 ns rise/fall. Use Value: 26 nC Q_g and 15 ns t_r allow sub-microsecond switching - minimizing RF leakage and inter-stage coupling during state transitions.
Battery Protection Circuits	Reverse Polarity Protection
Use Scenario: Overcurrent and short-circuit protection in single-cell Li-ion battery packs using external sense resistor and comparator feedback. IC Role / Device Role / Timing Role: Low-loss pass element in active protection FET configuration; handles up to 8 A continuous discharge current. Use Value: -12 V V_DS rating exceeds typical 4.2 V cell voltage with margin, while 0.022 Ω R_DS(on) minimizes power loss during normal operation.	Use Scenario: Preventing damage from accidental reverse battery connection in automotive accessories and industrial handheld tools. IC Role / Device Role / Timing Role: P-channel high-side switch placed between battery positive and system input - blocks reverse current when polarity is inverted. Use Value: Body diode forward voltage of -0.8 to -1.2 V ensures low-loss forward conduction, while -12 V V_DS withstands transients up to ±10 V without breakdown.

Portable Load Switching

RF Power Amplifier Switching

Use Scenario: Enabling/disabling power to USB peripherals or sensors in battery-powered IoT nodes with strict quiescent current budgets.

IC Role / Device Role / Timing Role: High-side load switch controlling V_OUT rail; operates in linear or saturated mode during transitions.

Use Value: 0.022 Ω R_DS(on) limits dropout to <175 mV at 8 A, preserving battery runtime while supporting hot-swap capability.

Use Scenario: Isolating RF power amplifier stages during transmit/receive state changes in cellular handsets and Wi-Fi modules.

IC Role / Device Role / Timing Role: Fast-switching PA enable/disconnect element; driven by baseband processor GPIO with <25 ns rise/fall.

Use Value: 26 nC Q_g and 15 ns t_r allow sub-microsecond switching - minimizing RF leakage and inter-stage coupling during state transitions.

Battery Protection Circuits

Reverse Polarity Protection

Use Scenario: Overcurrent and short-circuit protection in single-cell Li-ion battery packs using external sense resistor and comparator feedback.

IC Role / Device Role / Timing Role: Low-loss pass element in active protection FET configuration; handles up to 8 A continuous discharge current.

Use Value: -12 V V_DS rating exceeds typical 4.2 V cell voltage with margin, while 0.022 Ω R_DS(on) minimizes power loss during normal operation.

Use Scenario: Preventing damage from accidental reverse battery connection in automotive accessories and industrial handheld tools.

IC Role / Device Role / Timing Role: P-channel high-side switch placed between battery positive and system input - blocks reverse current when polarity is inverted.

Use Value: Body diode forward voltage of -0.8 to -1.2 V ensures low-loss forward conduction, while -12 V V_DS withstands transients up to ±10 V without breakdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3472CDV-T1-E3	-12 V V_DS, 0.018 Ω R_DS(on) @ -4.5 V, but 32 nC Q_g - higher conduction efficiency, slower switching.	Better for low-frequency, high-current loads where gate drive strength is available; less suitable for >300 kHz PWM.	Choose Si3472CDV-T1-E3 if R_DS(on) reduction outweighs gate charge penalty in thermally limited designs.
DMN2020LFG-7	-20 V V_DS, 0.028 Ω R_DS(on) @ -4.5 V, 19 nC Q_g - wider voltage margin, slightly higher on-resistance, lower gate charge.	Preferred in 12 V systems requiring transient overvoltage tolerance or tighter gate drive timing budgets.	Choose DMN2020LFG-7 when system transients exceed -12 V or when driving from weak GPIO sources with limited current capability.

Compared with SI3473CDV-T1-E3, Si3472CDV-T1-E3 trades faster switching for lower conduction loss, while DMN2020LFG-7 offers higher voltage headroom and reduced gate drive demand - making each optimal for distinct trade-offs in power density, frequency, and transient resilience.

Availability

SI3473CDV-T1-E3 is available at Aetrix Electronics and suitable for portable load switching, RF PA enable control, battery protection circuits, and reverse polarity protection requiring stable component supply across production lifecycles.

Supply support for SI3473CDV-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and miniaturized solutions.

The SI3473CDV-T1-E3 belongs to Vishay's TrenchFET® P-channel MOSFET family, engineered for low-voltage, high-density power switching in battery-powered and space-constrained applications.

FAQ

What is the maximum continuous drain current rating for SI3473CDV-T1-E3 under standard PCB mounting conditions?

The SI3473CDV-T1-E3 supports -8 A continuous drain current when mounted on a 1" × 1" FR4 board at T_C = 25 °C, as specified in Vishay's S09-0660-Rev. C datasheet. Derating applies above 70 °C case temperature, dropping to -6.5 A at T_C = 70 °C. This rating assumes proper thermal pad soldering to maximize heat transfer through the exposed drain paddle.

Does SI3473CDV-T1-E3 require a gate pull-up resistor in high-side load switch configurations?

Yes - SI3473CDV-T1-E3 is a P-channel MOSFET and requires a gate pull-up resistor to V_IN (or a dedicated gate driver) to maintain the off-state. With V_GS = 0 V, the device remains on; pulling gate to source turns it off. A 10 kΩ–100 kΩ resistor ensures reliable deactivation when the control signal is high-impedance or unpowered, preventing unintended conduction in SI3473CDV-T1-E3-based power rails.

Can SI3473CDV-T1-E3 be used in synchronous rectification applications?

No - SI3473CDV-T1-E3 is not recommended for synchronous rectification due to its relatively high R_DS(on) (0.022 Ω) and lack of optimized body diode recovery characteristics for bidirectional high-frequency conduction. While its body diode conducts with V_SD = -0.8 to -1.2 V, the 50–75 ns t_rr and 30–45 nC Q_rr introduce significant switching loss in flyback or LLC topologies. Dedicated synchronous rectifier MOSFETs offer lower Q_rr and tighter V_GS(th) distribution for SI3473CDV-T1-E3 replacement in such roles.

What is the thermal resistance from junction to foot (R_thJF) for SI3473CDV-T1-E3, and how does it impact layout?

The SI3473CDV-T1-E3 has a maximum R_thJF of 30 °C/W, measured from junction to the exposed drain paddle (foot). This value guides thermal pad design: a minimum 10 mm² copper area with ≥4 thermal vias (0.3 mm diameter) to inner ground plane is recommended to approach the 25 °C/W typical rating. Poor thermal pad implementation directly elevates junction temperature, reducing safe operating current and accelerating parametric drift in SI3473CDV-T1-E3 deployments.

Is SI3473CDV-T1-E3 compatible with lead-free reflow profiles, and what is its peak temperature rating?

Yes - SI3473CDV-T1-E3 is qualified for lead-free reflow per JEDEC J-STD-020, with a maximum peak temperature of 260 °C for 30 seconds. The device meets RoHS 2011/65/EU and is halogen-free (per Vishay's "-GE3" suffix definition), making it suitable for modern automated assembly lines. Reflow profiles must avoid exceeding 260 °C to prevent degradation of the TSOP-6 mold compound and wirebond integrity in SI3473CDV-T1-E3 units.

SI3473CDV-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 8.1A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 2010 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 4.2W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3473CDV-T1-E3 FAQ

1.How can I place an order for SI3473CDV-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3473CDV-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3473CDV-T1-E3 reliable?

The price and inventory of SI3473CDV-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3473CDV-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI3473CDV-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3473CDV-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3473CDV-T1-E3?

SI3473CDV-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3473CDV-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3473CDV-T1-E3?

For technical support, including SI3473CDV-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3473CDV-T1-E3 requirements.

6.How does Aetrix verify that SI3473CDV-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI3473CDV-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3473CDV-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI3473CDV-T1-E3?

All SI3473CDV-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3473CDV-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3473CDV-T1-E3 part is unused and in its original packaging.

Return procedure for SI3473CDV-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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