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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3473CDV-T1-GE3

Name: SI3473CDV-T1-GE3
Brand: Vishay Siliconix
SKU: SI3473CDV-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3473CDV-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3473CDV-T1-GE3.pdf

Description:: MOSFET P-CH 12V 8A 6TSOP

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Product details

Overview

SI3473CDV-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in TSOP-6 package, rated for -12 V drain-source voltage, 0.022 Ω R_DS(on) at V_GS = -4.5 V, and -8 A continuous drain current at T_C = 25 °C. It serves as a low-side load switch in portable power management circuits with PWM-optimized gate charge (26 nC typ.) and fast switching (t_r = 15 ns, t_f = 35 ns at V_GEN = -8 V).

For engineers reviewing the SI3473CDV-T1-GE3 datasheet, SI3473CDV-T1-GE3 pinout, SI3473CDV-T1-GE3 application, or SI3473CDV-T1-GE3 equivalent, key selection criteria include its -12 V rating, low R_DS(on) at logic-level gate drive (-1.8 V to -4.5 V), integrated body diode with 50 ns reverse recovery time, and TSOP-6 footprint compatibility with space-constrained DC-DC and battery protection designs.

Technical Context

This device uses Vishay's TrenchFET® process to achieve low on-resistance and high transconductance (30 S typ.) while maintaining robust gate oxide integrity under ±8 V gate-source stress. Its negative threshold voltage (-0.4 to -1.0 V) ensures reliable turn-on with standard logic-level controllers and enables use in high-side configurations with appropriate gate biasing.

The MOSFET features optimized dynamic parameters: C_iss = 2010 pF, C_oss = 580 pF, and C_rss = 520 pF at V_DS = -6 V, supporting efficient hard-switching in load-switch and PA-switch applications. Thermal resistance R_thJF is 25 °C/W (typ.), enabling direct thermal coupling to PCB copper via exposed drain pads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-12 V - Maximum blocking voltage for low-voltage battery-fed systems (e.g., single-cell Li-ion, 3.3 V/5 V rails)
R_DS(on) max @ V_GS = -4.5 V	0.022 Ω - Enables <175 mW conduction loss at -8 A, critical for thermally constrained handheld devices
Q_g typ.	26 nC - Low gate charge supports high-frequency PWM control with minimal driver power dissipation
I_D continuous @ T_C = 25 °C	-8 A - Supports high-current load switching without external heatsinking when mounted on 1" × 1" FR4
t_r/t_f @ V_GEN = -8 V	15 ns / 35 ns - Fast edge rates reduce switching losses in battery-powered PA and backlight drivers
V_GS(th)	-0.4 to -1.0 V - Ensures guaranteed turn-on with 1.8 V I/O microcontrollers and low-power logic families
Body diode V_SD	-0.8 to -1.2 V @ -5.9 A - Low forward drop minimizes reverse conduction loss in synchronous rectifier or flyback snubber paths

Pinout & Package

TSOP-6 surface-mount package with exposed drain pad for thermal and electrical connection. Pin 1–2–5–6 are internally connected to drain; Pin 3 is gate; Pin 4 is source.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6 (D)	Drain	High-current output node; electrically and thermally tied to exposed pad - requires full-solder thermal land per Vishay land pattern 72610
3 (G)	Gate	Control input; accepts logic-level drive down to -1.8 V; gate leakage ≤ ±100 nA ensures low standby current
4 (S)	Source	Reference node for gate drive and current sensing; connects to system ground or floating rail in high-side configuration

Key Features

Feature	Design Value
TrenchFET® construction	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for efficient switching in portable power stages
PWM-optimized gate charge	26 nC total gate charge at -4.5 V enables clean 1–2 MHz switching with minimal overshoot and ringing
Logic-level compatible V_GS(th)	-0.4 to -1.0 V threshold ensures robust turn-on with 1.8 V/2.5 V/3.3 V GPIOs without level-shifting circuitry
Integrated body diode	50 ns reverse recovery time and 30 nC Q_rr support bidirectional current handling in buck sync rectifiers and H-bridge freewheeling
Lead (Pb)-free & halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709E requirements for green electronics manufacturing

Applications

Battery Protection Circuit	RF Power Amplifier Switch
Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Low-side load switch controlling battery discharge path; activated/deactivated by protection IC or MCU GPIO. Use Value: 0.022 Ω R_DS(on) limits voltage drop to <175 mV at 8 A, preserving battery runtime and minimizing thermal rise on compact PCBs.	Use Scenario: Transmit/receive antenna path switching in 2.4 GHz Wi-Fi and Bluetooth modules. IC Role / Device Role / Timing Role: High-isolation RF switch isolating PA output from antenna during receive mode. Use Value: -12 V V_DS rating and low C_oss (580 pF) ensure >30 dB isolation at 2.4 GHz while maintaining insertion loss <0.3 dB.
USB-C Port Power Switch	LED Backlight Dimming Driver
Use Scenario: Inrush current limiting and fault isolation for USB-C power delivery (PD) sink ports. IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by PD controller to enable/disable V_BUS to downstream loads. Use Value: -8 A continuous rating and 20 A pulsed capability handle 3 A/5 V and 3 A/9 V PD profiles; fast turn-off (<95 ns td(off)) prevents fault propagation.	Use Scenario: PWM-controlled current regulation for white LED strings in automotive instrument clusters and industrial HMIs. IC Role / Device Role / Timing Role: Low-side constant-current switch modulated at 1–20 kHz to control LED brightness without audible noise. Use Value: 26 nC Q_g and 15 ns rise time allow clean 20 kHz PWM edges, eliminating flicker and EMI issues common with slower MOSFETs.

Battery Protection Circuit

RF Power Amplifier Switch

Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: Low-side load switch controlling battery discharge path; activated/deactivated by protection IC or MCU GPIO.

Use Value: 0.022 Ω R_DS(on) limits voltage drop to <175 mV at 8 A, preserving battery runtime and minimizing thermal rise on compact PCBs.

Use Scenario: Transmit/receive antenna path switching in 2.4 GHz Wi-Fi and Bluetooth modules.

IC Role / Device Role / Timing Role: High-isolation RF switch isolating PA output from antenna during receive mode.

Use Value: -12 V V_DS rating and low C_oss (580 pF) ensure >30 dB isolation at 2.4 GHz while maintaining insertion loss <0.3 dB.

USB-C Port Power Switch

LED Backlight Dimming Driver

Use Scenario: Inrush current limiting and fault isolation for USB-C power delivery (PD) sink ports.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by PD controller to enable/disable V_BUS to downstream loads.

Use Value: -8 A continuous rating and 20 A pulsed capability handle 3 A/5 V and 3 A/9 V PD profiles; fast turn-off (<95 ns td(off)) prevents fault propagation.

Use Scenario: PWM-controlled current regulation for white LED strings in automotive instrument clusters and industrial HMIs.

IC Role / Device Role / Timing Role: Low-side constant-current switch modulated at 1–20 kHz to control LED brightness without audible noise.

Use Value: 26 nC Q_g and 15 ns rise time allow clean 20 kHz PWM edges, eliminating flicker and EMI issues common with slower MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3471DV-T1-GE3	R_DS(on) = 0.032 Ω @ -4.5 V; lower ID rating (-5.5 A); same TSOP-6 package	Suitable for lower-current load switches where thermal margin is less constrained	Select when board space is identical but peak current demand is ≤5.5 A and higher R_DS(on) is acceptable
DMN2020LFG-7	R_DS(on) = 0.020 Ω @ -4.5 V; -10 A rating; same 6-lead TSOP footprint but different pinout (G/S/D layout differs)	Requires PCB layout revision due to non-identical pin mapping; better for higher-current designs	Choose only if redesigning layout; offers lower on-resistance but not drop-in compatible with SI3473CDV-T1-GE3

Compared with SI3473CDV-T1-GE3, Si3471DV-T1-GE3 trades 45% higher R_DS(on) for identical footprint and drive compatibility, while DMN2020LFG-7 delivers 9% lower on-resistance but mandates pinout-aware layout changes - making SI3473CDV-T1-GE3 optimal for cost-sensitive, space-constrained 8 A load switches requiring no redesign.

Availability

SI3473CDV-T1-GE3 is available at Aetrix Electronics and suitable for battery protection circuits, RF power amplifier switching, USB-C port power control, and LED backlight dimming requiring stable component supply across production lifecycles.

Supply support for SI3473CDV-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high reliability and performance in harsh environments.

The SI3473CDV-T1-GE3 belongs to Vishay's TrenchFET® Gen III P-channel MOSFET product line, engineered for ultra-low R_DS(on) and fast switching in portable, battery-powered, and space-constrained power management systems.

FAQ

What is the maximum continuous drain current for SI3473CDV-T1-GE3 at 70 °C case temperature?

The SI3473CDV-T1-GE3 supports -8 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal design per Vishay's recommended land pattern (Document 72610) and operation within the safe operating area defined by junction temperature limits (T_J ≤ 150 °C). Derating applies above 70 °C case temperature.

Does SI3473CDV-T1-GE3 require a gate resistor for stable PWM operation?

SI3473CDV-T1-GE3 benefits from an external gate resistor (typically 1–10 Ω) to dampen ringing and control slew rate during PWM switching. The device's 4.8 Ω typical gate resistance and 26 nC gate charge make it responsive to low-impedance drivers; however, omitting a series gate resistor may cause oscillation or EMI in high-speed (>500 kHz) applications. Vishay recommends R_g = 1 Ω in evaluation conditions.

Can SI3473CDV-T1-GE3 be used in high-side switching configurations?

Yes, SI3473CDV-T1-GE3 can be used in high-side switching, but requires gate drive voltage exceeding the source potential by at least |V_GS(th)| (≥1.0 V) - typically achieved using a charge pump or bootstrap circuit. Its -12 V V_DS rating and -0.4 to -1.0 V V_GS(th) support such topologies in 5 V or lower rail systems, though low-side placement remains simpler for most load-switch applications.

What is the thermal resistance from junction to foot (R_thJF) for SI3473CDV-T1-GE3?

The SI3473CDV-T1-GE3 has a typical junction-to-foot thermal resistance (R_thJF) of 25 °C/W and a maximum of 30 °C/W under steady-state conditions. This parameter reflects heat transfer from the silicon die directly to the exposed drain pad, making it critical for estimating temperature rise when the device is soldered to large copper areas - unlike R_thJA, which depends heavily on board layout.

Is SI3473CDV-T1-GE3 compliant with halogen-free standards?

Yes, SI3473CDV-T1-GE3 is both lead (Pb)-free and halogen-free, meeting JEDEC JS709E and IEC 61249-2-21 requirements. The "GE3" suffix explicitly denotes compliance with halogen-free material definitions (total Cl + Br ≤ 900 ppm), verified per Vishay's material declaration documentation (Doc. 99912).

SI3473CDV-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 8.1A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 2010 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 4.2W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3473CDV-T1-GE3 FAQ

1.How can I place an order for SI3473CDV-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3473CDV-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3473CDV-T1-GE3 reliable?

The price and inventory of SI3473CDV-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3473CDV-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI3473CDV-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3473CDV-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3473CDV-T1-GE3?

SI3473CDV-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3473CDV-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3473CDV-T1-GE3?

For technical support, including SI3473CDV-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3473CDV-T1-GE3 requirements.

6.How does Aetrix verify that SI3473CDV-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI3473CDV-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3473CDV-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI3473CDV-T1-GE3?

All SI3473CDV-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3473CDV-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3473CDV-T1-GE3 part is unused and in its original packaging.

Return procedure for SI3473CDV-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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