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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3473DDV-T1-GE3

Name: SI3473DDV-T1-GE3
Brand: Vishay Siliconix
SKU: SI3473DDV-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3473DDV-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3473DDV-T1-GE3.pdf

Description:: MOSFET P-CHANNEL 12V 8A 6TSOP

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Product details

Overview

SI3473DDV-T1-GE3 from Vishay Siliconix is a P-channel TrenchFET® Gen III power MOSFET optimized for low-voltage load switching in space-constrained applications. It delivers R_DS(on) of 17.8 mΩ at V_GS = −4.5 V, supports −8 A continuous drain current (T_C = 25 °C), and features TSOP-6 packaging with verified 100 % R_g and UIS testing - deployed in portable PA switch and battery-powered load control circuits.

For engineers reviewing the SI3473DDV-T1-GE3 datasheet, SI3473DDV-T1-GE3 pinout, SI3473DDV-T1-GE3 application, or SI3473DDV-T1-GE3 equivalent, key selection criteria include its −12 V V_DS rating, gate-threshold voltage range (−0.4 V to −1.0 V), low 22.8 nC total gate charge at −4.5 V drive, and thermal resistance profile (R_thJA = 62.5 °C/W max) for thermally constrained PCB layouts.

Technical Context

This P-channel MOSFET operates with negative gate drive relative to source, enabling high-side switching without level-shifting circuitry. Its trench-based silicon architecture achieves low on-resistance at logic-level gate voltages (−1.8 V to −4.5 V), supporting direct interfacing with 1.8 V/2.5 V/3.3 V microcontroller GPIOs.

The device integrates a robust body diode (V_SD = −0.8 to −1.2 V at −6.9 A, t_rr = 38–57 ns) and is characterized for safe operation across −55 °C to +150 °C junction temperature, with absolute maximum ratings including ±8 V V_GS, −30 A pulsed drain current, and 3.6 W power dissipation at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−12 V - Maximum drain-source blocking voltage; defines upper limit for high-side switch rail voltage
R_DS(on) @ V_GS = −4.5 V	17.8 mΩ max - Enables <150 mW conduction loss at −8 A DC load current
Q_g @ V_GS = −4.5 V	22.8 nC typ - Determines gate drive energy and switching speed in PWM load control
I_D Continuous (T_C = 25 °C)	−8 A - Sustained current capability with external heatsinking or copper pour
V_GS(th)	−0.4 V to −1.0 V - Ensures turn-on with low-voltage logic; tight threshold enables predictable switching at 1.8 V systems
R_thJA	62.5 °C/W max - Defines thermal derating on standard FR4; requires layout optimization for >1 W operation
Body Diode t_rr	38–57 ns - Supports moderate-frequency synchronous rectification or flyback recovery

Pinout & Package

TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm footprint, 0.95 mm pitch, 1.0 mm height - designed for automated assembly and high-density routing on compact PCBs.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 6	Drain (D)	Common high-current output node; internally paralleled pins reduce resistance and improve thermal path to PCB copper
3	Gate (G)	Control input; requires stable negative voltage relative to source to turn on; low 4.1 Ω max R_g aids fast switching
5	Source (S)	Reference node for gate drive and load return; tied to system ground or positive rail depending on high/low-side configuration

Key Features

Feature	Design Value
TrenchFET® Gen III process	Delivers lowest R_DS(on) per mm² among Vishay's −12 V P-channel portfolio, reducing board area and conduction losses
R_DS(on) rated at V_GS = −1.8 V	Enables full enhancement with 1.8 V I/O rails - eliminates need for gate boosters in ultra-low-power systems
100 % R_g and UIS tested	Guarantees gate robustness against ESD and avalanche stress during in-circuit operation and hot-plug events
Lead (Pb)-free and halogen-free	Complies with RoHS 2011/65/EU and JEDEC JS709E; suitable for consumer, industrial, and medical end equipment
Low C_iss (1975 pF)	Reduces gate drive power and improves EMI performance in high-frequency switching applications

Applications

Smartphone Power Amplifier Switch	USB-C Port Power Path Control
Use Scenario: Enabling/disabling RF power amplifier stages in LTE/5G handsets to minimize standby current and manage thermal envelope. IC Role / Device Role / Timing Role: High-side load switch controlling V_PA supply; driven by baseband processor GPIO with 1.8 V logic. Use Value: Low 17.8 mΩ R_DS(on) limits voltage drop and self-heating under 500 mA PA bias; fast 22 ns turn-on delay ensures timely RF enable timing.	Use Scenario: Isolating V_BUS from downstream USB-C PD controller and port protection ICs during fault conditions or cable insertion/removal. IC Role / Device Role / Timing Role: Reverse-polarity protected, logic-level controlled high-side switch in 5 V power path. Use Value: −12 V V_DS margin accommodates 5.5 V overvoltage transients; −1.0 V V_GS(th) max ensures reliable turn-off when gate is pulled to 0 V.
Industrial Sensor Node Battery Disconnect	Wearable Device Load Management
Use Scenario: Cutting off non-critical subsystems (e.g., display backlight, radio) during deep sleep to extend coin-cell battery life beyond 1 year. IC Role / Device Role / Timing Role: Low-leakage P-channel switch placed between battery anode and load; gate driven by MCU wake-up controller. Use Value: IDSS ≤ −1 μA at −12 V ensures <100 nA system leakage; −0.4 V min V_GS(th) prevents accidental turn-on from noise coupling.	Use Scenario: Managing power to Bluetooth LE transceiver and motion sensor in hearables, where PCB real estate and thermal mass are severely limited. IC Role / Device Role / Timing Role: Compact, low-R_DS(on) load switch mounted directly adjacent to ICs it powers. Use Value: TSOP-6 footprint (3.05 × 2.85 mm) saves >40 % board area vs. SO-8; 62.5 °C/W R_thJA allows 1.3 W dissipation with minimal copper pour.

Smartphone Power Amplifier Switch

USB-C Port Power Path Control

Use Scenario: Enabling/disabling RF power amplifier stages in LTE/5G handsets to minimize standby current and manage thermal envelope.

IC Role / Device Role / Timing Role: High-side load switch controlling V_PA supply; driven by baseband processor GPIO with 1.8 V logic.

Use Value: Low 17.8 mΩ R_DS(on) limits voltage drop and self-heating under 500 mA PA bias; fast 22 ns turn-on delay ensures timely RF enable timing.

Use Scenario: Isolating V_BUS from downstream USB-C PD controller and port protection ICs during fault conditions or cable insertion/removal.

IC Role / Device Role / Timing Role: Reverse-polarity protected, logic-level controlled high-side switch in 5 V power path.

Use Value: −12 V V_DS margin accommodates 5.5 V overvoltage transients; −1.0 V V_GS(th) max ensures reliable turn-off when gate is pulled to 0 V.

Industrial Sensor Node Battery Disconnect

Wearable Device Load Management

Use Scenario: Cutting off non-critical subsystems (e.g., display backlight, radio) during deep sleep to extend coin-cell battery life beyond 1 year.

IC Role / Device Role / Timing Role: Low-leakage P-channel switch placed between battery anode and load; gate driven by MCU wake-up controller.

Use Value: IDSS ≤ −1 μA at −12 V ensures <100 nA system leakage; −0.4 V min V_GS(th) prevents accidental turn-on from noise coupling.

Use Scenario: Managing power to Bluetooth LE transceiver and motion sensor in hearables, where PCB real estate and thermal mass are severely limited.

IC Role / Device Role / Timing Role: Compact, low-R_DS(on) load switch mounted directly adjacent to ICs it powers.

Use Value: TSOP-6 footprint (3.05 × 2.85 mm) saves >40 % board area vs. SO-8; 62.5 °C/W R_thJA allows 1.3 W dissipation with minimal copper pour.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3463DV-T1-GE3	−20 V V_DS, 25 mΩ R_DS(on) @ −4.5 V, same TSOP-6 package	Higher voltage margin but higher conduction loss; suited for 12 V systems with transient spikes	Select when V_IN may exceed −12 V or when higher avalanche ruggedness is required
DMN2023LFG-7	−20 V V_DS, 22 mΩ R_DS(on) @ −4.5 V, 2 mm × 2 mm WDFN package	Smaller footprint but lower current rating (−4.8 A); no leaded option for reworkability	Choose for ultra-compact designs where manual rework is not required and thermal budget permits higher R_DS(on)

Compared with Si3463DV-T1-GE3 and DMN2023LFG-7, the SI3473DDV-T1-GE3 offers the lowest R_DS(on) in the −12 V class with proven manufacturability in TSOP-6 - making it optimal for cost-sensitive, high-efficiency 5 V–9 V load switching where voltage headroom is tightly constrained.

Availability

SI3473DDV-T1-GE3 is available at Aetrix Electronics and suitable for smartphone PA switching, USB-C power path control, and wearable battery management requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for SI3473DDV-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The SI3473DDV-T1-GE3 belongs to Vishay's TrenchFET® Gen III P-channel MOSFET family, engineered specifically for low-voltage, high-density load switching in portable and battery-powered electronics.

FAQ

What is the maximum continuous drain current for SI3473DDV-T1-GE3 at 70 °C case temperature?

The SI3473DDV-T1-GE3 supports −8 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat transfer at elevated case temperatures and assumes adequate PCB copper area for thermal conduction. The SI3473DDV-T1-GE3 must be mounted on a minimum 1" × 1" FR4 board per test condition b to achieve this rating.

Does SI3473DDV-T1-GE3 support 1.8 V logic-level gate drive?

Yes, the SI3473DDV-T1-GE3 is explicitly characterized for R_DS(on) at V_GS = −1.8 V (0.0388 Ω max), confirming full enhancement with 1.8 V microcontroller outputs. Its V_GS(th) range of −0.4 V to −1.0 V ensures reliable turn-on even with process and temperature variation, making the SI3473DDV-T1-GE3 suitable for direct GPIO control without level shifters.

What is the thermal resistance from junction to ambient for SI3473DDV-T1-GE3 under standard mounting conditions?

The SI3473DDV-T1-GE3 has a maximum junction-to-ambient thermal resistance (R_thJA) of 62.5 °C/W when mounted on a 1" × 1" FR4 board with 2 oz copper, per note b in the datasheet. This value applies for t ≤ 5 s pulse conditions; steady-state operation requires derating based on actual board layout and airflow. The SI3473DDV-T1-GE3's R_thJC is 35 °C/W max, indicating strong internal thermal coupling to the drain pad.

Is SI3473DDV-T1-GE3 suitable for reverse polarity protection?

Yes, the SI3473DDV-T1-GE3 can be used for reverse polarity protection in low-voltage systems (≤12 V) by placing it in the high-side path with source tied to input and drain to load. Its −12 V V_DS rating provides margin for typical 5 V/9 V rails, and its low R_DS(on) minimizes forward voltage drop. However, the SI3473DDV-T1-GE3 lacks integrated reverse-battery protection circuitry - external gate control is required to ensure proper turn-off during reverse connection.

What does the marking code 'BR' indicate on SI3473DDV-T1-GE3?

The marking code 'BR' on the SI3473DDV-T1-GE3 top-side laser etch identifies the specific device variant within the Si3473DDV family and corresponds to the −12 V, TSOP-6, TrenchFET® Gen III P-channel MOSFET with the electrical specifications documented in Vishay's S17-0546-Rev. A datasheet. This marking is used for traceability and is consistent across all SI3473DDV-T1-GE3 units shipped by Vishay.

SI3473DDV-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen III

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 17.8mOhm @ 8.7A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 1975 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 3.6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3473DDV-T1-GE3 FAQ

1.How can I place an order for SI3473DDV-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3473DDV-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3473DDV-T1-GE3 reliable?

The price and inventory of SI3473DDV-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3473DDV-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI3473DDV-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3473DDV-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3473DDV-T1-GE3?

SI3473DDV-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3473DDV-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3473DDV-T1-GE3?

For technical support, including SI3473DDV-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3473DDV-T1-GE3 requirements.

6.How does Aetrix verify that SI3473DDV-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI3473DDV-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3473DDV-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI3473DDV-T1-GE3?

All SI3473DDV-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3473DDV-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3473DDV-T1-GE3 part is unused and in its original packaging.

Return procedure for SI3473DDV-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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