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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3474DV-T1-BE3

Name: SI3474DV-T1-BE3
Brand: Vishay Siliconix
SKU: SI3474DV-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3474DV-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3474DV-T1-BE3.pdf

Description:: N-CHANNEL 100-V (D-S) MOSFET

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Product details

Overview

SI3474DV-T1-BE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® Power MOSFET in TSOP-6 package, rated for 3.8 A continuous drain current at T_J = 150 °C, with R_DS(on) = 0.126 Ω at V_GS = 10 V and Q_g = 2.9 nC (V_GS = 4.5 V). It serves as a high-efficiency load switch or synchronous rectifier in DC/DC boost converters and LED backlighting circuits for LCD TVs.

For engineers reviewing the SI3474DV-T1-BE3 datasheet, SI3474DV-T1-BE3 pinout, SI3474DV-T1-BE3 application, or SI3474DV-T1-BE3 equivalent, key selection criteria include its 100 V V_DS, low gate charge for fast switching, thermally optimized TSOP-6 footprint, and robust UIS-tested ruggedness - all critical for compact, high-reliability power management in mobile computing and display systems.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its R_DS(on) remains stable across V_GS = 4.5–10 V (0.189–0.126 Ω), supporting both 4.5 V logic-level and 10 V gate drive systems. The device features fully characterized body diode recovery (t_rr = 23–35 ns, Q_rr = 21–32 nC), enabling use in synchronous rectification without external Schottky replacement.

Thermal design is supported by validated junction-to-foot (R_thJF = 28–35 °C/W) and junction-to-ambient (R_thJA = 50–62.5 °C/W) resistance ratings, with safe operating area (SOA) defined up to 100 µs pulses and DC operation limited by R_DS(on) heating. All units undergo 100 % R_g and UIS testing per production lot.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands up to 100 V drain-source voltage, suitable for 48 V input DC/DC stages and LED string supplies.
R_DS(on) @ V_GS = 10 V	0.126 Ω max - Enables <150 mW conduction loss at 3 A, reducing thermal stress in space-constrained layouts.
Q_g @ V_GS = 4.5 V	2.9 nC typ - Supports efficient 1–2 MHz switching in boost converters with minimal gate driver power demand.
I_D (continuous, T_C = 25 °C)	3.8 A - Delivers rated current with standard FR4 PCB mounting (1" × 1") and no heatsink.
t_rr / Q_rr	23–35 ns / 21–32 nC - Fast, low-charge body diode enables synchronous rectification without cross-conduction risk.
R_thJA	50–62.5 °C/W - Defines thermal derating curve for ambient-limited operation; usable up to 2.8 A at 25 °C ambient.
V_GS(th)	1.2–3.0 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic controllers, including microcontroller GPIOs.

Pinout & Package

SI3474DV-T1-BE3 is housed in a surface-mount TSOP-6 package (JEDEC MO-193C), measuring 3.05 mm × 2.85 mm × 1.0 mm, with exposed drain pads on pins 1, 2, 5, and 6 for enhanced thermal conduction to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Common high-current output node; electrically and thermally tied together for low-inductance, high-power routing.
3	Source (S)	Power return path; connects to ground or low-side reference; forms body diode anode with Drain.
4	Gate (G)	Control input; requires <2.9 nC charge for full enhancement; sensitive to ESD (±20 V rating).

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × area efficiency in TSOP-6, enabling smaller footprints than comparable SO-8 MOSFETs.
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and avalanche energy survival (E_AS = 0.31 mJ) in real-world fault conditions.
Low Q_gd/Q_g ratio	Q_gd = 1.4 nC of total Q_g = 2.9 nC - minimizes Miller plateau time, improving hard-switching efficiency and EMI behavior.
Lead (Pb)-free and Halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B, verified via material categorization per doc#99912.
Body diode softness (t_a/t_b)	Reverse recovery fall time t_a = 17 ns and rise time t_b = 6 ns - reduces voltage overshoot and ringing during commutation.

Applications

DC/DC Boost Converter	LED Backlighting for LCD TV
Use Scenario: Step-up converter supplying 60–100 V to parallel LED strings in large-format displays. IC Role / Device Role / Timing Role: High-side synchronous rectifier replacing flyback diode to improve efficiency above 90 %. Use Value: Low R_DS(on) and fast t_rr reduce conduction and switching losses, enabling higher PWM dimming frequencies without thermal penalty.	Use Scenario: Constant-current LED driver with adjustable brightness via analog/digital dimming control. IC Role / Device Role / Timing Role: Load switch controlling power delivery to LED string banks during standby or local dimming zones. Use Value: 3.8 A rating supports multi-string configurations; low V_GS(th) ensures clean turn-on with 3.3 V MCU outputs.
Load Switch for Mobile Computing	Power Management in USB-C PD Systems
Use Scenario: Controlled power sequencing for SoC core rails or peripheral modules in tablets and ultrabooks. IC Role / Device Role / Timing Role: Low-side or high-side load switch enabling inrush current limiting and hot-swap capability. Use Value: 100 % UIS-tested ruggedness prevents failure during capacitive load charging; small TSOP-6 saves board area vs. SO-8 alternatives.	Use Scenario: Secondary-side power path switch in USB-C Power Delivery sink designs requiring 20 V input handling. IC Role / Device Role / Timing Role: Input protection switch isolating downstream circuitry during overvoltage or reverse-polarity events. Use Value: 100 V V_DS margin accommodates 20 V PD transients and line surges; Q_g < 3 nC allows fast enable/disable response.

DC/DC Boost Converter

LED Backlighting for LCD TV

Use Scenario: Step-up converter supplying 60–100 V to parallel LED strings in large-format displays.

IC Role / Device Role / Timing Role: High-side synchronous rectifier replacing flyback diode to improve efficiency above 90 %.

Use Value: Low R_DS(on) and fast t_rr reduce conduction and switching losses, enabling higher PWM dimming frequencies without thermal penalty.

Use Scenario: Constant-current LED driver with adjustable brightness via analog/digital dimming control.

IC Role / Device Role / Timing Role: Load switch controlling power delivery to LED string banks during standby or local dimming zones.

Use Value: 3.8 A rating supports multi-string configurations; low V_GS(th) ensures clean turn-on with 3.3 V MCU outputs.

Load Switch for Mobile Computing

Power Management in USB-C PD Systems

Use Scenario: Controlled power sequencing for SoC core rails or peripheral modules in tablets and ultrabooks.

IC Role / Device Role / Timing Role: Low-side or high-side load switch enabling inrush current limiting and hot-swap capability.

Use Value: 100 % UIS-tested ruggedness prevents failure during capacitive load charging; small TSOP-6 saves board area vs. SO-8 alternatives.

Use Scenario: Secondary-side power path switch in USB-C Power Delivery sink designs requiring 20 V input handling.

IC Role / Device Role / Timing Role: Input protection switch isolating downstream circuitry during overvoltage or reverse-polarity events.

Use Value: 100 V V_DS margin accommodates 20 V PD transients and line surges; Q_g < 3 nC allows fast enable/disable response.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 0.115 Ω @ 10 V, but larger PowerPAK® 1212-8 package (3.1 × 3.1 mm); Q_g = 3.5 nC.	Better thermal performance (R_thJA = 42 °C/W), but requires larger PCB area and different land pattern.	Select when higher current (4.5 A) and lower R_DS(on) outweigh footprint constraints.
DMN3028LSD-13	R_DS(on) = 0.028 Ω @ 10 V, but only 30 V V_DS; SO-8 package; Q_g = 10.5 nC.	Unsuitable for >40 V input stages; higher gate drive power needed due to larger Q_g.	Only viable in low-voltage (<30 V) load switch roles where ultra-low on-resistance is prioritized over voltage rating.

Compared with Si7157DP-T1-GE3 and DMN3028LSD-13, SI3474DV-T1-BE3 uniquely balances 100 V rating, sub-3 nC gate charge, and TSOP-6 compactness - making it optimal for space-constrained, medium-voltage DC/DC and LED driver applications where thermal and layout efficiency are jointly critical.

Availability

SI3474DV-T1-BE3 is available at Aetrix Electronics and suitable for DC/DC converters, LED backlighting systems, and load switch implementations requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SI3474DV-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The Si3474DV belongs to Vishay's TrenchFET® Gen III family, engineered for high-efficiency, high-density power conversion in consumer, computing, and display applications where thermal performance and gate drive simplicity are essential.

FAQ

What is the maximum continuous drain current rating for SI3474DV-T1-BE3 at 70 °C case temperature?

The SI3474DV-T1-BE3 supports 3.0 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations under sustained operation and must be verified against actual PCB copper area and airflow in the target application. The SI3474DV-T1-BE3 datasheet confirms this rating applies to surface-mounted 1" × 1" FR4 boards.

Does SI3474DV-T1-BE3 support logic-level gate drive from a 3.3 V microcontroller?

Yes - the SI3474DV-T1-BE3 has a gate threshold voltage (V_GS(th)) range of 1.2–3.0 V, and delivers R_DS(on) = 0.189 Ω at V_GS = 4.5 V and I_D = 1 A. While full enhancement occurs at ≥4.5 V, the SI3474DV-T1-BE3 remains partially conductive at 3.3 V, enabling functional but non-optimal switching in low-duty-cycle load switch roles.

What is the avalanche energy rating for SI3474DV-T1-BE3, and how is it tested?

The SI3474DV-T1-BE3 is rated for single-pulse avalanche energy (E_AS) of 0.31 mJ, measured under L = 0.1 mH with I_AS = 2.5 A. Per Vishay documentation, every SI3474DV-T1-BE3 unit undergoes 100 % Unclamped Inductive Switching (UIS) testing during production to validate ruggedness against inductive turn-off transients.

Can SI3474DV-T1-BE3 be used as a synchronous rectifier in a 100 V output boost converter?

Yes - the SI3474DV-T1-BE3 is qualified for synchronous rectification due to its characterized body diode parameters: t_rr = 23–35 ns, Q_rr = 21–32 nC, and V_SD = −0.8 to −1.2 V at I_S = 1.8 A. Its 100 V V_DS rating provides sufficient margin for 100 V output stages, and low Q_g enables precise timing control in high-frequency designs.

What is the thermal resistance from junction to foot (R_thJF) for SI3474DV-T1-BE3, and why does it matter?

The SI3474DV-T1-BE3 has a typical junction-to-foot thermal resistance (R_thJF) of 28 °C/W, with a maximum of 35 °C/W. This parameter quantifies heat transfer from the die directly to the exposed drain pads (pins 1, 2, 5, 6), enabling efficient conduction into internal PCB copper layers - critical for maintaining T_J < 150 °C in high-current, low-airflow environments where junction-to-ambient paths are insufficient.

SI3474DV-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 2.8A (Ta), 3.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 126mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 196 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 3.6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3474DV-T1-BE3 FAQ

1.How can I place an order for SI3474DV-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3474DV-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3474DV-T1-BE3 reliable?

The price and inventory of SI3474DV-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3474DV-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI3474DV-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3474DV-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3474DV-T1-BE3?

SI3474DV-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3474DV-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3474DV-T1-BE3?

For technical support, including SI3474DV-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3474DV-T1-BE3 requirements.

6.How does Aetrix verify that SI3474DV-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI3474DV-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3474DV-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI3474DV-T1-BE3?

All SI3474DV-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3474DV-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3474DV-T1-BE3 part is unused and in its original packaging.

Return procedure for SI3474DV-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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