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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3476DV-T1-BE3

Name: SI3476DV-T1-BE3
Brand: Vishay Siliconix
SKU: SI3476DV-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3476DV-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3476DV-T1-BE3.pdf

Description:: N-CHANNEL 80-V (D-S) MOSFET

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Product details

Overview

SI3476DV-T1-BE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® power MOSFET in TSOP-6 package, with R_DS(on) = 0.093 Ω at V_GS = 10 V, continuous drain current of 4.6 A at T_C = 25 °C, and total gate charge of 4.9 nC. It serves as a high-efficiency load switch in portable DC/DC and boost converters.

For engineers reviewing the SI3476DV-T1-BE3 datasheet, SI3476DV-T1-BE3 pinout, SI3476DV-T1-BE3 application, or SI3476DV-T1-BE3 equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive, fast switching (t_r = 4 ns, t_f = 3 ns), integrated body diode with Q_rr = 13 nC, and thermal resistance R_thJA = 50 °C/W on FR4 board.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in compact surface-mount applications. Its gate threshold voltage (V_GS(th) = 1.2–3.0 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while the 100 % R_g tested specification ensures consistent gate resistance (0.82–8.2 Ω) for predictable turn-on/turn-off timing.

The device features a thermally enhanced TSOP-6 package with drain-connected pins (1,2,5,6) for improved heat dissipation and low-inductance source (pin 4) and gate (pin 3) routing. Its body diode exhibits V_SD = 0.85–1.2 V at I_S = 2.8 A and t_rr = 20–30 ns, supporting synchronous rectification and flyback recovery in DC/DC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports input rails up to 48 V nominal with 25 % derating margin in industrial DC/DC converters
R_DS(on)	0.093 Ω @ V_GS = 10 V - delivers ≤ 1.5 W conduction loss at 4 A continuous drain current
I_D (continuous)	4.6 A @ T_C = 25 °C - suitable for medium-power load switching without external heatsink on 1" × 1" FR4
Q_g	4.9 nC typical - enables <100 ns total switching time with 1 Ω gate driver, minimizing dynamic losses
R_thJA	50 °C/W typical - allows ~2 W power dissipation before junction exceeds 125 °C ambient
V_GS(th)	1.2–3.0 V - ensures reliable enhancement-mode turn-on with standard microcontroller GPIOs
C_iss	195 pF - contributes to stable gate drive impedance and low EMI in high-frequency switching

Pinout & Package

TSOP-6 package (JEDEC MO-193C), 3.05 mm × 2.85 mm footprint, with exposed drain pad for thermal conduction. Pins are arranged in standard top-view layout: pins 1,2,5,6 = Drain (D), pin 3 = Gate (G), pin 4 = Source (S).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Parallel-connected drain terminals reduce package inductance and improve thermal spreading to PCB copper
3	Gate (G)	High-impedance control terminal requiring <5 nC charge for full enhancement; sensitive to ESD
4	Source (S)	Reference node for gate drive and current sensing; tied to system ground in low-side switch configuration

Key Features

Feature	Design Value
TrenchFET® construction	Enables lower R_DS(on) per die area than planar MOSFETs, improving power density in space-constrained portable designs
100 % R_g tested	Guarantees gate resistance between 0.82–8.2 Ω, enabling precise prediction of switching speed and gate driver power requirements
Low V_GS(th) range	Ensures robust turn-on with 3.3 V logic, eliminating need for level-shifting in battery-powered microcontroller interfaces
Optimized body diode	Q_rr = 13 nC and t_rr = 20 ns support efficient asynchronous operation in boost and flyback converters
Thermally enhanced TSOP-6	Drain-connected multiple pins reduce R_thJF to 28 °C/W (steady-state), facilitating passive cooling in handheld devices

Applications

Portable Load Switching	LED Backlight Control
Use Scenario: Power sequencing for USB-C powered peripherals with inrush current limiting. IC Role / Device Role / Timing Role: Low-side N-channel switch controlling 5–12 V rail delivery to downstream circuitry. Use Value: R_DS(on) = 0.093 Ω limits voltage drop to <470 mV at 5 A, preserving headroom for LDOs and PMICs.	Use Scenario: Dynamic brightness control of white LED strings in tablet displays. IC Role / Device Role / Timing Role: PWM-driven high-side or low-side current switch in constant-current LED driver stage. Use Value: Fast 4 ns rise time enables >100 kHz PWM without duty-cycle distortion, supporting smooth dimming.
DC/DC Converter Sync Rectifier	Boost Converter Output Switch
Use Scenario: Secondary-side synchronous rectification in isolated 5 V/3 A buck-boost converter. IC Role / Device Role / Timing Role: Low-V_DS freewheeling path replacing Schottky diode to reduce conduction loss. Use Value: Body diode V_SD = 0.85 V and Q_rr = 13 nC minimize reverse-recovery loss and thermal stress during commutation.	Use Scenario: Main switching element in 3.3 V to 12 V boost regulator for camera flash charging. IC Role / Device Role / Timing Role: High-efficiency main switch operating at 500 kHz–1 MHz with minimal gate drive loss. Use Value: Total gate charge of 4.9 nC reduces driver IC power consumption by >30 % versus comparable 80 V MOSFETs.

Portable Load Switching

LED Backlight Control

Use Scenario: Power sequencing for USB-C powered peripherals with inrush current limiting.

IC Role / Device Role / Timing Role: Low-side N-channel switch controlling 5–12 V rail delivery to downstream circuitry.

Use Value: R_DS(on) = 0.093 Ω limits voltage drop to <470 mV at 5 A, preserving headroom for LDOs and PMICs.

Use Scenario: Dynamic brightness control of white LED strings in tablet displays.

IC Role / Device Role / Timing Role: PWM-driven high-side or low-side current switch in constant-current LED driver stage.

Use Value: Fast 4 ns rise time enables >100 kHz PWM without duty-cycle distortion, supporting smooth dimming.

DC/DC Converter Sync Rectifier

Boost Converter Output Switch

Use Scenario: Secondary-side synchronous rectification in isolated 5 V/3 A buck-boost converter.

IC Role / Device Role / Timing Role: Low-V_DS freewheeling path replacing Schottky diode to reduce conduction loss.

Use Value: Body diode V_SD = 0.85 V and Q_rr = 13 nC minimize reverse-recovery loss and thermal stress during commutation.

Use Scenario: Main switching element in 3.3 V to 12 V boost regulator for camera flash charging.

IC Role / Device Role / Timing Role: High-efficiency main switch operating at 500 kHz–1 MHz with minimal gate drive loss.

Use Value: Total gate charge of 4.9 nC reduces driver IC power consumption by >30 % versus comparable 80 V MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3464DV-T1-BE3	60 V V_DS, R_DS(on) = 0.042 Ω @ 10 V, same TSOP-6 package and pinout	Lower voltage rating limits use to ≤36 V input systems; better efficiency below 40 V but unsafe above 60 V	Select when input voltage is capped at 36 V and lowest possible R_DS(on) is prioritized over voltage margin
DMN3028LFG-7	30 V V_DS, R_DS(on) = 0.028 Ω @ 10 V, 6-pin SOT-23 package, different pinout (G-S-D layout)	Not pin-compatible; requires PCB redesign; suited only for ≤24 V battery systems with ultra-low R_DS(on) demand	Choose only if redesigning layout and operating strictly within 30 V domain with aggressive thermal constraints

Compared with Si3464DV-T1-BE3 and DMN3028LFG-7, SI3476DV-T1-BE3 provides optimal balance of 80 V breakdown margin, 0.093 Ω R_DS(on), and TSOP-6 compatibility-making it the preferred choice for universal-input 12–48 V portable power stages where voltage headroom and layout reuse are critical.

Availability

SI3476DV-T1-BE3 is available at Aetrix Electronics and suitable for portable load switching, LED backlight control, and DC/DC converter applications requiring stable component supply, RoHS-compliant packaging, and long-term industrial availability.

Supply support for SI3476DV-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The Si3476DV belongs to Vishay's TrenchFET® Gen III low-voltage power MOSFET family, engineered for high-density portable electronics where low gate charge, logic-level drive, and thermally robust packaging are essential.

FAQ

What is the maximum continuous drain current for SI3476DV-T1-BE3 at 70 °C case temperature?

The maximum continuous drain current for SI3476DV-T1-BE3 is 3.7 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be applied in thermal design calculations for sustained operation.

Does SI3476DV-T1-BE3 support 3.3 V logic-level gate drive?

Yes, SI3476DV-T1-BE3 supports 3.3 V logic-level gate drive. Its gate threshold voltage (V_GS(th)) ranges from 1.2 V to 3.0 V, and R_DS(on) is characterized down to V_GS = 4.5 V (0.126 Ω). At 3.3 V, it operates in the linear region with partial enhancement-suitable for analog control but not full saturation; for switching, 4.5 V or higher is recommended.

What is the thermal resistance from junction to ambient (R_thJA) for SI3476DV-T1-BE3 on a standard PCB?

The typical junction-to-ambient thermal resistance (R_thJA) for SI3476DV-T1-BE3 is 50 °C/W when mounted on a 1" × 1" FR4 board with 1 oz copper, as stated in the Thermal Resistance Ratings table. The maximum value is 62.5 °C/W under the same conditions, used for worst-case thermal margin analysis.

Is SI3476DV-T1-BE3 pin-compatible with other TSOP-6 N-channel MOSFETs?

SI3476DV-T1-BE3 uses the standard TSOP-6 pinout (pins 1,2,5,6 = Drain; pin 3 = Gate; pin 4 = Source), matching JEDEC MO-193C. It is pin-compatible with other Vishay TSOP-6 MOSFETs like Si3464DV-T1-BE3, but not with SOT-23 or SO-8 variants. Always verify pin function mapping in the respective datasheets before substitution.

What is the body diode reverse recovery charge (Q_rr) of SI3476DV-T1-BE3?

The body diode reverse recovery charge (Q_rr) of SI3476DV-T1-BE3 is 13–20 nC, measured at I_F = 2.8 A and dI/dt = 100 A/µs. This parameter directly impacts switching loss in asynchronous DC/DC converters and must be included in efficiency calculations when the MOSFET operates in freewheeling mode.

SI3476DV-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 3.5A (Ta), 4.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 93mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 7.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 195 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 3.6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3476DV-T1-BE3 FAQ

1.How can I place an order for SI3476DV-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3476DV-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3476DV-T1-BE3 reliable?

The price and inventory of SI3476DV-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3476DV-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI3476DV-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3476DV-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3476DV-T1-BE3?

SI3476DV-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3476DV-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3476DV-T1-BE3?

For technical support, including SI3476DV-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3476DV-T1-BE3 requirements.

6.How does Aetrix verify that SI3476DV-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI3476DV-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3476DV-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI3476DV-T1-BE3?

All SI3476DV-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3476DV-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3476DV-T1-BE3 part is unused and in its original packaging.

Return procedure for SI3476DV-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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