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Vishay Siliconix SI3481DV-T1-E3
- Part No.:
- SI3481DV-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3481DV-T1-E3.pdf
- Description:
- MOSFET P-CH 30V 4A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,223
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Product details
Overview
SI3481DV-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for low-side load switching in space-constrained DC-DC and power management circuits. It features -30 V VDS, 0.048 Ω RDS(on) at VGS = -10 V, -5.3 A continuous drain current (TA = 25 °C), TSOP-6 package, and RoHS-compliant lead-free construction.
For engineers reviewing the SI3481DV-T1-E3 datasheet, SI3481DV-T1-E3 pinout, SI3481DV-T1-E3 application, or SI3481DV-T1-E3 equivalent, key selection criteria include verified gate threshold voltage (-1.0 to -3.0 V), pulsed drain current capability (-20 A), thermal resistance (RthJA = 90 °C/W steady-state), diode forward voltage (-0.85 to -1.2 V), and total gate charge (15.5–25 nC) under defined test conditions.
Technical Context
This device operates as a single P-channel silicon MOSFET using TrenchFET® technology to achieve low on-resistance and fast switching. Its gate threshold voltage range (-1.0 to -3.0 V) enables reliable turn-on with standard logic-level negative gate drive, while its body diode supports reverse-current conduction in buck or OR-ing configurations.
The TSOP-6 package provides optimized thermal performance via exposed drain pad (RthJF = 30–36 °C/W), and its absolute maximum ratings are validated for operation across -55 to +150 °C junction temperature range. Dynamic parameters-including Qg, Qgd, td(on), and tf-are specified at VDS = -15 V, ensuring predictable timing behavior in high-frequency switching applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum drain-source blocking voltage; defines safe operating range in 24 V rail and automotive battery-connected circuits. |
| RDS(on) | 0.048 Ω @ VGS = -10 V - Low conduction loss at full gate drive; enables <120 mW I²R loss at 5.3 A DC load. |
| ID (continuous) | -5.3 A @ TA = 25 °C - Rated current for PCB-mounted operation on 1" × 1" FR4; derates to -4.2 A at 70 °C ambient. |
| VGS(th) | -1.0 to -3.0 V - Confirmed gate threshold window; ensures robust turn-on with -4.5 V or -10 V logic-compatible drive. |
| Qg | 15.5–25 nC - Total gate charge magnitude; determines required driver strength and switching energy in PWM control loops. |
| VSD | -0.85 to -1.2 V @ IS = -1.7 A - Forward voltage of integrated body diode; impacts efficiency in synchronous rectification or reverse-polarity protection. |
| PD | 2.0 W @ TA = 25 °C - Maximum steady-state power dissipation; requires thermal design margin when operating near rated current. |
Pinout & Package
SI3481DV-T1-E3 is housed in a surface-mount TSOP-6 package with exposed drain pad for enhanced thermal conduction. Pin numbering follows top-view orientation per Vishay document S09-2276-Rev. D.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Common high-current output node; internally connected to exposed copper pad for thermal and electrical path to PCB ground plane. |
| 3 | Gate (G) | Control terminal; requires negative voltage relative to source to turn on; sensitive to ESD (±20 V max rating). |
| 4 | Source (S) | Reference node for gate drive and load return path; body diode anode; tied to system ground or supply rail depending on switch topology. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 0.048 Ω RDS(on) in TSOP-6 footprint-reducing board area vs. SO-8 alternatives without sacrificing current handling. |
| Halogen-free construction | Complies with IEC 61249-2-21; eliminates brominated flame retardants for environmentally regulated end equipment. |
| Low gate threshold voltage | VGS(th) down to -1.0 V allows reliable turn-on with -3.3 V or -5 V logic drivers-reducing need for level-shifting circuitry. |
| Exposed drain thermal pad | Reduces RthJF to 30 °C/W, enabling higher sustained current in thermally constrained layouts without heatsinks. |
| RoHS-compliant lead-free | Meets Directive 2002/95/EC; compatible with standard Pb-free reflow profiles and avoids hazardous substance reporting obligations. |
Applications
| Power Load Switching | Reverse Polarity Protection |
|---|---|
Use Scenario: Controlled power-up sequencing for microcontroller peripherals and sensors in portable instrumentation. IC Role / Device Role: Low-side P-channel switch isolating downstream 3.3 V or 5 V rails from main battery or DC supply. Use Value: Enables precise enable/disable control with <120 mW conduction loss at 5.3 A, minimizing thermal impact on adjacent components. | Use Scenario: Preventing damage from accidental battery reversal in handheld medical devices and industrial data loggers. IC Role / Device Role: Series-connected P-MOSFET acting as ideal diode with active gate control to block reverse current. Use Value: Achieves <1.2 V forward drop vs. >0.7 V for Schottky solutions-improving efficiency and reducing heat generation during normal operation. |
| Battery Backup Switchover | DC-DC Converter OR-ing |
Use Scenario: Seamless transition between primary Li-ion battery and USB-powered backup in always-on IoT edge nodes. IC Role / Device Role: High-side switch managing power path selection based on voltage monitoring signals. Use Value: Supports fast turn-off (<55 ns fall time) to prevent backfeed and ensure clean switchover with minimal voltage droop. | Use Scenario: Combining outputs from dual isolated DC-DC converters in telecom power systems to improve redundancy and reliability. IC Role / Device Role: OR-ing FET controlling current flow direction and preventing reverse current into failed converter. Use Value: Leverages low RDS(on) and fast switching (td(off) ≤ 90 ns) to minimize insertion loss and maintain tight output regulation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si3465DV-T1-E3 | -20 V VDS, 0.022 Ω RDS(on) @ -4.5 V, lower voltage rating but superior on-resistance at logic-level drive. | Better suited for 12 V or lower input rails where tighter gate drive margin exists; not rated for -30 V transients. | Select Si3465DV-T1-E3 when operating below 15 V and prioritizing lowest possible RDS(on) at -4.5 V. |
| DMN3026LSD-13 | -30 V VDS, 0.052 Ω RDS(on) @ -10 V, same package but higher gate charge (32 nC) and slower switching. | Higher Qg increases driver requirements and switching losses in high-frequency (>500 kHz) designs. | Choose DMN3026LSD-13 only if second-source qualification mandates Diodes Inc. parts or legacy BOM alignment is required. |
Compared with SI3481DV-T1-E3, Si3465DV-T1-E3 offers lower on-resistance at reduced voltage rating, while DMN3026LSD-13 trades higher gate charge and slower dynamics for cross-manufacturer compatibility-making SI3481DV-T1-E3 optimal for 24 V systems needing balanced RDS(on), speed, and thermal performance.
Availability
SI3481DV-T1-E3 is available at Aetrix Electronics and suitable for power load switching, reverse polarity protection, and DC-DC OR-ing applications requiring stable component supply, consistent parametric performance, and long-term manufacturing support.
Supply support for SI3481DV-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The Si3481DV belongs to Vishay's TrenchFET® P-channel MOSFET product line, engineered specifically for compact, high-efficiency load switching in consumer, industrial, and computing power systems.
FAQ
What is the maximum continuous drain current rating for SI3481DV-T1-E3 at 70 °C ambient temperature?
The SI3481DV-T1-E3 is rated for -4.2 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table under "Continuous Drain Current (TJ = 150 °C)" with derating applied. This value assumes surface mounting on a 1" × 1" FR4 board per Vishay's test condition. Exceeding this current without additional thermal management risks junction temperature exceeding 150 °C.
Does SI3481DV-T1-E3 have a built-in body diode, and what is its forward voltage specification?
Yes, SI3481DV-T1-E3 integrates a parasitic body diode with anode connected to the source and cathode to the drain. Its forward voltage is specified as -0.85 to -1.2 V at IS = -1.7 A and VGS = 0 V, measured at TJ = 25 °C. This diode enables reverse-current conduction in applications like OR-ing and flyback energy recovery, though it is not optimized for high-frequency rectification.
What is the gate threshold voltage range for SI3481DV-T1-E3, and how does it affect drive requirements?
The gate threshold voltage VGS(th) for SI3481DV-T1-E3 is -1.0 to -3.0 V, measured at ID = -250 µA. This range confirms reliable turn-on with -3.3 V or -5 V logic-level gate drive, eliminating need for external level shifters. However, full RDS(on) performance (0.048 Ω) requires VGS = -10 V, so drive capability must be verified for target switching speed and loss targets.
Is SI3481DV-T1-E3 suitable for use in automotive applications?
SI3481DV-T1-E3 is not AEC-Q101 qualified and is not recommended for automotive safety-critical or engine-compartment applications. While its -55 to +150 °C operating temperature range meets some automotive ambient requirements, Vishay does not certify this part for automotive use, and no AEC-Q101 stress test reports are published for SI3481DV-T1-E3.
How does the TSOP-6 package of SI3481DV-T1-E3 improve thermal performance compared to standard SO-8 MOSFETs?
The TSOP-6 package of SI3481DV-T1-E3 incorporates an exposed drain pad that directly connects the MOSFET die to the PCB copper, achieving RthJF = 30 °C/W (typical). This is significantly lower than typical SO-8 packages (RthJA ≈ 62 °C/W), allowing higher sustained current in compact layouts without heatsinks-critical for space-constrained portable and industrial power modules.
SI3481DV-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 48mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.14W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SI3481DV-T1-E3 FAQ
1.How can I place an order for SI3481DV-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3481DV-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3481DV-T1-E3 reliable?
The price and inventory of SI3481DV-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3481DV-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI3481DV-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3481DV-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3481DV-T1-E3?
SI3481DV-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3481DV-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3481DV-T1-E3?
For technical support, including SI3481DV-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3481DV-T1-E3 requirements.
6.How does Aetrix verify that SI3481DV-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI3481DV-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3481DV-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI3481DV-T1-E3?
All SI3481DV-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3481DV-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3481DV-T1-E3 part is unused and in its original packaging.
Return procedure for SI3481DV-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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