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Vishay Siliconix SI3481DV-T1-GE3
- Part No.:
- SI3481DV-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3481DV-T1-GE3.pdf
- Description:
- MOSFET P-CH 30V 4A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:8,880
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Product details
Overview
SI3481DV-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -30 V drain-source voltage, 0.048 Ω RDS(on) at VGS = -10 V and -5.3 A continuous drain current, designed for low-side load switching in space-constrained DC power rails.
For engineers reviewing the SI3481DV-T1-GE3 datasheet, SI3481DV-T1-GE3 pinout, SI3481DV-T1-GE3 application, or SI3481DV-T1-GE3 equivalent, key selection criteria include guaranteed RDS(on) at -4.5 V gate drive, TSOP-6 thermal performance (RthJA = 90 °C/W), and halogen-free/RoHS-compliant construction for industrial and consumer power management.
Technical Context
This device operates as a single P-channel switch with gate threshold voltage of -1.0 to -3.0 V and exhibits 15.5 nC total gate charge at VDS = -15 V, enabling fast turn-on/turn-off with minimal driver loss. Its body diode has VSD = -0.85 to -1.2 V at IS = -1.7 A and trr = 30–60 ns, supporting synchronous rectification and reverse polarity protection.
The TSOP-6 package provides exposed drain pad for thermal conduction, with RthJF = 30–36 °C/W to footprint, and supports surface mounting on 1" × 1" FR4 board per JEDEC standards. Absolute maximum ratings include ±20 V gate-source voltage and -55 to +150 °C junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for negative-rail load switching |
| RDS(on) @ VGS = -10 V | 0.048 Ω - Enables ≤270 mW conduction loss at 5.3 A |
| RDS(on) @ VGS = -4.5 V | 0.079 Ω - Ensures functional switching with 4.5 V logic-level control |
| ID (continuous, TA = 25 °C) | -5.3 A - Sustains full-rated load current without derating at room ambient |
| Qg | 15.5 nC - Low gate charge reduces driver power and enables high-frequency PWM |
| RthJA (steady state) | 90 °C/W - Defines thermal limit for PCB layout with standard FR4 copper area |
| VGS(th) | -1.0 to -3.0 V - Confirmed turn-on threshold compatible with 3.3 V and 5 V microcontroller outputs |
Pinout & Package
TSOP-6 surface-mount package with exposed drain pad for thermal dissipation; 2.85 mm × 3.0 mm footprint, 1.0 mm max height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | High-current output node; internally connected to exposed pad for thermal and electrical conduction |
| 3 | Gate (G) | Control input; requires negative voltage relative to source to turn on |
| 4 | Source (S) | Reference node for gate drive and load return path; tied to system ground or negative rail |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers lower RDS(on) per die area than planar MOSFETs, enabling compact 6-pin load switches |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated end equipment |
| Guaranteed RDS(on) at -4.5 V | Ensures reliable on-state operation with standard logic-level gate drivers without level-shifting |
| Low Qgd/Qg ratio (4.3/15.5 nC) | Improves switching efficiency and reduces Miller-induced shoot-through risk in half-bridge configurations |
Applications
| Battery-Powered Load Switching | USB Port Power Control |
|---|---|
Use Scenario: Enabling/disabling power to peripherals in portable medical devices or handheld test instruments with single-cell Li-ion supply. IC Role / Device Role / Timing Role: Low-side P-channel switch controlling VBAT-to-load path; driven by MCU GPIO with inverted logic. Use Value: 0.079 Ω RDS(on) at -4.5 V ensures <180 mW loss at 1.5 A, extending battery runtime and minimizing self-heating. | Use Scenario: Providing overcurrent-protected, hot-plug-capable 5 V power to USB Type-A downstream ports in docking stations. IC Role / Device Role / Timing Role: Reverse-polarity protected load switch placed between upstream 5 V rail and port connector. Use Value: Body diode forward voltage of -0.85 V limits reverse leakage during hot insertion, while 20 A pulsed rating handles USB inrush transients. |
| Industrial Sensor Node Power Gating | POS Terminal Power Sequencing |
Use Scenario: Isolating analog sensor subcircuits (e.g., RTD, thermocouple front-end) during sleep mode in IIoT edge nodes. IC Role / Device Role / Timing Role: High-side switch replacement using P-channel topology to avoid bootstrap complexity in 3.3 V systems. Use Value: -1.0 V minimum VGS(th) guarantees turn-on with 3.3 V GPIO, eliminating need for external level shifters or charge pumps. | Use Scenario: Staged activation of display backlight, printer interface, and card reader rails in point-of-sale terminals. IC Role / Device Role / Timing Role: Individual rail controller in multi-stage power-up sequence managed by system supervisor IC. Use Value: 15.5 nC gate charge allows clean, jitter-free enable timing with standard 10 kΩ pull-up/pull-down networks and µs-scale slew control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si3483DV-T1-GE3 | Same TSOP-6 package, but -20 V VDS, higher RDS(on) (0.085 Ω @ -4.5 V) | Optimized for lower-voltage 3.3 V or 5 V rails where -30 V rating is excessive | Select when system VIN ≤ 16 V and lower gate charge (12.5 nC) is prioritized over voltage headroom |
| DMN3026LSD-13 | 30 V P-channel, SO-8 package, 0.055 Ω RDS(on) @ -10 V, 19 nC Qg | Larger footprint and higher thermal resistance (RthJA ≈ 120 °C/W) limit use in ultra-compact designs | Choose when board space permits SO-8 and higher peak current (12 A) is required over TSOP-6 density |
Compared with SI3481DV-T1-GE3, Si3483DV-T1-GE3 trades voltage rating for tighter gate drive compatibility at lower voltages, while DMN3026LSD-13 offers higher current capacity at the cost of thermal performance and board area-making SI3481DV-T1-GE3 optimal for space-constrained 30 V load switching with 4.5 V logic control.
Availability
SI3481DV-T1-GE3 is available at Aetrix Electronics and suitable for battery-powered load switching, USB port power control, and industrial sensor node power gating requiring stable component supply and halogen-free compliance.
Supply support for SI3481DV-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.
The Si3481DV product line delivers high-density P-channel TrenchFET® MOSFETs for compact, low-voltage load switching in portable, industrial, and computing applications where gate drive simplicity and thermal performance are critical.
FAQ
What is the maximum continuous drain current for SI3481DV-T1-GE3 at 70 °C ambient temperature?
The SI3481DV-T1-GE3 supports -4.2 A continuous drain current at TA = 70 °C under standard FR4 mounting conditions. This value reflects thermal derating due to reduced heat dissipation at elevated ambient, and assumes no additional heatsinking beyond the specified 1" × 1" board area. The SI3481DV-T1-GE3 datasheet specifies this rating in the Absolute Maximum Ratings table under "Continuous Drain Current (TJ = 150 °C)".
Does SI3481DV-T1-GE3 require a gate resistor for typical 3.3 V MCU GPIO drive?
No external gate resistor is required for basic on/off control of SI3481DV-T1-GE3 with a 3.3 V MCU GPIO, as its gate threshold voltage (-1.0 to -3.0 V) ensures full enhancement with inverted logic drive. However, a small series resistor (10–100 Ω) is recommended to dampen ringing during fast transitions and reduce EMI. The SI3481DV-T1-GE3 gate capacitance profile supports robust operation without oscillation under standard digital drive conditions.
Can SI3481DV-T1-GE3 be used in a high-side switch configuration?
Yes, SI3481DV-T1-GE3 can be used as a high-side switch when the source is connected to the positive supply rail and the load is grounded, but it requires gate drive voltage exceeding the supply by |VGS(th)| - typically achieved via charge pump or isolated driver. Unlike N-channel high-side switches, the SI3481DV-T1-GE3 avoids bootstrap complexity but demands careful gate bias design. Its -30 V rating makes it suitable for 24 V high-side applications if properly driven.
What is the safe operating area (SOA) limitation for SI3481DV-T1-GE3 at DC operation?
At DC operation, the SI3481DV-T1-GE3 safe operating area is limited by RDS(on) and thermal resistance: maximum continuous power dissipation is 1.14 W at TA = 25 °C, corresponding to ~3.4 A at -30 V VDS or ~5.3 A at -10 V VDS. The SOA curve in the SI3481DV-T1-GE3 datasheet confirms that DC operation remains within limits only below the RDS(on)-bounded diagonal line, not the avalanche or pulse-limited regions.
Is SI3481DV-T1-GE3 pin-compatible with earlier Si3481DV-T1-E3?
Yes, SI3481DV-T1-GE3 is fully pin-compatible and functionally identical to Si3481DV-T1-E3, differing only in halogen-free material content per IEC 61249-2-21. Both share identical TSOP-6 pinout, electrical specifications, thermal characteristics, and absolute maximum ratings. The SI3481DV-T1-GE3 may be used as a direct replacement in existing designs requiring updated environmental compliance without layout or firmware changes.
SI3481DV-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 48mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.14W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SI3481DV-T1-GE3 FAQ
1.How can I place an order for SI3481DV-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3481DV-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3481DV-T1-GE3 reliable?
The price and inventory of SI3481DV-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3481DV-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI3481DV-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3481DV-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3481DV-T1-GE3?
SI3481DV-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3481DV-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3481DV-T1-GE3?
For technical support, including SI3481DV-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3481DV-T1-GE3 requirements.
6.How does Aetrix verify that SI3481DV-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI3481DV-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3481DV-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI3481DV-T1-GE3?
All SI3481DV-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3481DV-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3481DV-T1-GE3 part is unused and in its original packaging.
Return procedure for SI3481DV-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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