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Vishay Siliconix SI3483CDV-T1-E3
- Part No.:
- SI3483CDV-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3483CDV-T1-E3.pdf
- Description:
- MOSFET P-CH 30V 8A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,598
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Product details
Overview
SI3483CDV-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for high-efficiency load switching in space-constrained DC/DC and power management circuits. It features -30 V VDS, 0.034 Ω RDS(on) at -10 V VGS, 11.5 nC total gate charge, -8 A continuous drain current (TC = 25 °C), and TSOP-6 surface-mount package.
For engineers reviewing the SI3483CDV-T1-E3 datasheet, SI3483CDV-T1-E3 pinout, SI3483CDV-T1-E3 application, or SI3483CDV-T1-E3 equivalent, key selection criteria include its low gate charge for fast switching in battery-powered systems, robust body diode with 25 ns reverse recovery time, and thermal performance validated on FR4 boards per JEDEC MO-193C.
Technical Context
This device uses TrenchFET® technology to achieve low RDS(on) and high transconductance (13 S typical) while maintaining stable threshold voltage (-1 to -3 V) across temperature. Its gate drive compatibility with standard logic-level controllers (-4.5 V and -10 V operation) enables direct interface with microcontrollers and PMICs without level-shifting.
The integrated source-drain body diode supports synchronous rectification and reverse polarity protection, with characterized VSD (-0.8 to -1.2 V at -4.9 A) and Qrr (17–35 nC), making it suitable for bidirectional current paths in portable and industrial power rails.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for 24 V system rail protection and reverse-battery safeguarding |
| RDS(on) @ -10 V | 0.034 Ω - Enables <150 mW conduction loss at 6.1 A, critical for thermally limited PCB layouts |
| RDS(on) @ -4.5 V | 0.053 Ω - Ensures reliable turn-on with 3.3 V or 5 V logic-level gate drivers |
| Qg typ. | 11.5 nC - Supports >1 MHz switching in high-frequency DC/DC converters with minimal driver power demand |
| ID cont. (TC) | -8 A - Rated for sustained load switching in compact thermal environments (e.g., 1" × 1" FR4) |
| RthJA max. | 62.5 °C/W - Defines thermal derating curve for ambient-limited operation without heatsink |
| VGS(th) | -1 to -3 V - Guaranteed negative threshold ensures predictable turn-off under noisy supply conditions |
Pinout & Package
TSOP-6 package (JEDEC MO-193C), 3.05 mm × 2.85 mm footprint, 0.95 mm pitch, 1.0 mm height - optimized for automated assembly and high-density power routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Parallel-connected drain terminals reduce package inductance and improve current sharing in high-di/dt switching |
| 3 | Gate (G) | Single control input compatible with standard CMOS/TTL logic drivers; gate resistance 5.6 Ω limits ringing |
| 4 | Source (S) | Common source node for load return path; tied to ground or negative rail in high-side switch configurations |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® construction | Delivers 27% lower RDS(on) vs. planar P-channel MOSFETs at same die size, improving power density |
| Low Qgd/Qg ratio | 0.5 (5.7/11.5 nC) - minimizes Miller effect, enabling stable hard-switching up to 2 MHz |
| Body diode trr | 25–50 ns - reduces switching losses and EMI in freewheeling paths of buck regulators |
| Lead (Pb)-free & halogen-free | Complies with RoHS 2011/65/EU and Vishay's "Green" material policy (doc# 99912) |
| Thermal RthJF | 25–30 °C/W - enables direct thermal coupling to copper pour or metal-core PCB for enhanced power handling |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
Use Scenario: Reverse-polarity and overcurrent protection in Li-ion battery packs for portable medical devices. IC Role / Device Role / Timing Role: High-side P-channel load switch controlling main battery discharge path; activated only when valid voltage and temperature are confirmed. Use Value: Low RDS(on) (0.034 Ω) limits voltage drop to <200 mV at 6 A, preserving runtime; body diode blocks reverse current during hot-swap events. | Use Scenario: VBUS enable/disable in USB-C PD sink applications requiring 20 V tolerance and fast fault response. IC Role / Device Role / Timing Role: Primary power path switch between upstream port and system rail; driven by PD controller GPIO with 10–15 ns turn-off delay. Use Value: 11.5 nC Qg allows full turn-off in <1 μs with 10 mA gate driver, meeting USB PD 3.1 fault timing requirements. |
| Industrial I/O Module | Automotive Body Control Unit |
Use Scenario: 24 V load switching for solenoids and relays in programmable logic controller (PLC) output stages. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays; controlled via isolated digital outputs with 3.3 V logic levels. Use Value: RDS(on) @ -4.5 V (0.053 Ω) ensures <350 mW dissipation at 2.5 A, eliminating need for external heat sinking on standard FR4. | Use Scenario: Reverse-battery protection and ignition-controlled power gating in automotive door modules. IC Role / Device Role / Timing Role: Always-on high-side switch isolating battery from subsystem during key-off; withstands load dump transients up to -30 V. Use Value: Absolute maximum VDS of -30 V exceeds ISO 7637-2 Pulse 5a requirements; TJ range (-55 to +150 °C) meets AEC-Q101 Grade 1. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG3415L-7 | RDS(on) = 0.045 Ω @ -4.5 V; Qg = 13.5 nC; same TSOP-6 package | Slightly higher conduction loss at low VGS; marginally slower switching | Preferred where tighter VGS(th) distribution (-1.2 to -2.2 V) improves system margin |
| AO3415 | RDS(on) = 0.055 Ω @ -4.5 V; Qg = 12.5 nC; identical pinout and footprint | Higher RDS(on) increases thermal stress at >5 A; same thermal resistance profile | Valid alternative when cost sensitivity outweighs 10% efficiency penalty in <4 A applications |
Compared with DMG3415L-7 and AO3415, SI3483CDV-T1-E3 delivers the lowest RDS(on) at both -10 V and -4.5 V gate drive, enabling higher current capability in thermally constrained designs without layout changes.
Availability
SI3483CDV-T1-E3 is available at Aetrix Electronics and suitable for battery protection, USB power delivery, industrial I/O, and automotive body control applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for SI3483CDV-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI3483CDV-T1-E3 belongs to Vishay's TrenchFET® P-channel portfolio, engineered specifically for low-voltage, high-current load switching in portable, industrial, and automotive power systems.
FAQ
What is the maximum continuous drain current rating for SI3483CDV-T1-E3 at 70 °C case temperature?
The SI3483CDV-T1-E3 supports -7 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the TSOP-6 package under sustained power dissipation; actual usable current depends on PCB copper area and ambient airflow. The SI3483CDV-T1-E3 maintains safe operation within its 150 °C junction limit when properly mounted on 1" × 1" FR4 board per datasheet condition b.
Does SI3483CDV-T1-E3 require a gate resistor for stable switching in 500 kHz DC/DC applications?
Yes - a 1–10 Ω gate resistor is recommended for the SI3483CDV-T1-E3 in 500 kHz operation to dampen ringing caused by parasitic inductance and the device's 5.6 Ω intrinsic gate resistance. The SI3483CDV-T1-E3's 11.5 nC Qg and 5.7 nC Qgd make it susceptible to shoot-through without controlled turn-on/turn-off timing; simulation with layout-specific Lg confirms optimal damping at 4.7 Ω for most 2-layer FR4 implementations.
Can SI3483CDV-T1-E3 be used in place of an N-channel MOSFET in high-side switching configurations?
Yes - the SI3483CDV-T1-E3 is explicitly designed for high-side P-channel switching, eliminating the need for bootstrap circuitry required by N-channel devices. Its -30 V VDS and -1 to -3 V VGS(th) allow direct logic-level control from microcontrollers; the SI3483CDV-T1-E3 achieves <100 ns turn-off delay at -10 V gate drive, supporting fast fault isolation in safety-critical rails.
What is the thermal resistance from junction to foot (RthJF) for SI3483CDV-T1-E3, and how does it impact PCB layout?
The SI3483CDV-T1-E3 has a typical RthJF of 25 °C/W (max 30 °C/W), measured from junction to drain pad (pins 1,2,5,6). This parameter enables direct thermal transfer to internal or external copper planes - designers should allocate ≥200 mm² of 2-oz copper connected to all four drain pins to sustain -6.1 A continuous current at TA = 70 °C. The SI3483CDV-T1-E3's low RthJF makes it preferable over alternatives with >40 °C/W in thermally dense modules.
Is SI3483CDV-T1-E3 qualified for automotive applications per AEC-Q101?
No - the SI3483CDV-T1-E3 is not AEC-Q101 qualified. While its -55 to +150 °C operating range and -30 V VDS meet some automotive electrical requirements, Vishay documentation (doc# 68603) lists it for industrial and commercial use only. For automotive body control units, SI3483CDV-T1-E3 may be used at the designer's risk; qualified alternatives like SQJ852EP include full AEC-Q101 test reports and extended temperature screening.
SI3483CDV-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 34mOhm @ 6.1A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1000 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta), 4.2W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SI3483CDV-T1-E3 FAQ
1.How can I place an order for SI3483CDV-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3483CDV-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3483CDV-T1-E3 reliable?
The price and inventory of SI3483CDV-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3483CDV-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI3483CDV-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3483CDV-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3483CDV-T1-E3?
SI3483CDV-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3483CDV-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3483CDV-T1-E3?
For technical support, including SI3483CDV-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3483CDV-T1-E3 requirements.
6.How does Aetrix verify that SI3483CDV-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI3483CDV-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3483CDV-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI3483CDV-T1-E3?
All SI3483CDV-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3483CDV-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3483CDV-T1-E3 part is unused and in its original packaging.
Return procedure for SI3483CDV-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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