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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3483DV-T1-E3

Name: SI3483DV-T1-E3
Brand: Vishay Siliconix
SKU: SI3483DV-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3483DV-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3483DV-T1-E3.pdf

Description:: MOSFET P-CH 30V 4.7A 6TSOP

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Product details

Overview

SI3483DV-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -30 V drain-source voltage, 0.035 Ω R_DS(on) at V_GS = -10 V, and -6.2 A continuous drain current at T_A = 25 °C, designed for low-side load switching in space-constrained DC-DC power rails.

For engineers reviewing the SI3483DV-T1-E3 datasheet, SI3483DV-T1-E3 pinout, SI3483DV-T1-E3 application, or SI3483DV-T1-E3 equivalent, key selection factors include its TSOP-6 package footprint, gate threshold of -1.0 to -3.0 V, 23–35 nC total gate charge, and guaranteed -1 µA I_DSS at -30 V.

Technical Context

This device operates as a single P-channel switch with source-connected substrate and integrated body diode, optimized for synchronous rectification and reverse-polarity protection where fast turn-off (t_d(off) = 71–110 ns) and low conduction loss are critical. Its thermal resistance R_thJA is 90 °C/W (steady-state) on FR4, enabling operation up to 150 °C junction temperature.

The MOSFET uses trench-gate silicon technology to achieve stable R_DS(on) across temperature (±15% variation from -55 to 125 °C), with gate drive compatibility down to -4.5 V (R_DS(on) = 0.053 Ω at -5.0 A), supporting 3.3 V and 5 V logic-level control without level shifting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage before avalanche breakdown; supports 24 V rail protection with margin
R_DS(on) @ V_GS = -10 V	0.035 Ω - Delivers ≤ 1.35 W conduction loss at -6.2 A, enabling compact thermal design
I_D (continuous, T_A = 25 °C)	-6.2 A - Sustained load current capability on standard 1" × 1" FR4 board without forced air
Q_g	23–35 nC - Determines gate driver power requirement and switching speed in high-frequency PWM
V_GS(th)	-1.0 to -3.0 V - Ensures reliable turn-on with 3.3 V microcontroller GPIOs while avoiding false triggering
T_J range	-55 to +150 °C - Qualified for industrial and automotive under-hood ambient conditions
I_DSS @ -30 V	-1 µA - Low leakage preserves battery life in always-on load-switch applications

Pinout & Package

TSOP-6 surface-mount package (3.0 mm × 2.85 mm, 1.1 mm height), lead (Pb)-free and halogen-free per IEC 61249-2-21.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	High-current output node; internally paralleled pins reduce resistance and improve thermal spreading
3	Gate (G)	Control input; requires < 100 nA leakage drive; sensitive to ESD (±20 V max V_GS)
4	Source (S)	Reference node for gate drive and current return path; tied to system ground in high-side switch configurations

Key Features

Feature	Design Value
TrenchFET® architecture	Enables lower R_DS(on) per die area than planar MOSFETs, reducing PCB footprint for same current rating
Lead (Pb)-free and halogen-free	Complies with RoHS 2002/95/EC and IEC 61249-2-21, eliminating hazardous substances in final assembly
Low gate charge (Q_g = 23–35 nC)	Reduces switching losses and driver IC stress in 100–500 kHz DC-DC converters
Guaranteed R_DS(on) at V_GS = -4.5 V	Supports direct interface with 3.3 V logic without gate driver, simplifying BOM and layout
Integrated body diode	Enables bidirectional current handling in reverse-voltage protection circuits without external diode

Applications

Battery-Powered Load Switch	USB Port Power Control
Use Scenario: Enabling/disabling power to peripheral modules (e.g., BLE radio, sensor array) in portable medical devices during sleep mode. IC Role / Device Role / Timing Role: Low-side P-channel switch controlling V_DD rail delivery; driven by MCU GPIO with active-low logic. Use Value: Achieves ≤ 1 µA standby current via -1 µA I_DSS, extending battery life beyond 1 year in intermittent-use devices.	Use Scenario: Providing overcurrent and reverse-polarity protection for USB Type-A downstream ports in docking stations. IC Role / Device Role / Timing Role: Reverse-voltage blocking element placed between upstream 5 V supply and port VBUS line. Use Value: Blocks -5 V faults with -30 V V_DS rating and conducts < 0.053 Ω at -4.5 V gate drive, minimizing voltage drop during hot-plug events.
Industrial PLC I/O Module	Automotive Body Control Unit
Use Scenario: Isolating 24 V field power to solenoid drivers in programmable logic controller output stages. IC Role / Device Role / Timing Role: High-reliability load switch with 150 °C T_J rating and 90 °C/W R_thJA for convection-cooled enclosures. Use Value: Maintains R_DS(on) stability across -40 to +85 °C ambient, ensuring consistent 24 V delivery without derating.	Use Scenario: Controlling power to infotainment display backlight in 12 V vehicle electrical systems. IC Role / Device Role / Timing Role: Low-R_DS(on) P-channel switch activated by CAN-linked microcontroller for dynamic brightness management. Use Value: Delivers < 0.035 Ω on-resistance at -10 V gate drive, limiting thermal rise to < 10 °C above ambient at 3 A load.

Battery-Powered Load Switch

USB Port Power Control

Use Scenario: Enabling/disabling power to peripheral modules (e.g., BLE radio, sensor array) in portable medical devices during sleep mode.

IC Role / Device Role / Timing Role: Low-side P-channel switch controlling V_DD rail delivery; driven by MCU GPIO with active-low logic.

Use Value: Achieves ≤ 1 µA standby current via -1 µA I_DSS, extending battery life beyond 1 year in intermittent-use devices.

Use Scenario: Providing overcurrent and reverse-polarity protection for USB Type-A downstream ports in docking stations.

IC Role / Device Role / Timing Role: Reverse-voltage blocking element placed between upstream 5 V supply and port VBUS line.

Use Value: Blocks -5 V faults with -30 V V_DS rating and conducts < 0.053 Ω at -4.5 V gate drive, minimizing voltage drop during hot-plug events.

Industrial PLC I/O Module

Automotive Body Control Unit

Use Scenario: Isolating 24 V field power to solenoid drivers in programmable logic controller output stages.

IC Role / Device Role / Timing Role: High-reliability load switch with 150 °C T_J rating and 90 °C/W R_thJA for convection-cooled enclosures.

Use Value: Maintains R_DS(on) stability across -40 to +85 °C ambient, ensuring consistent 24 V delivery without derating.

Use Scenario: Controlling power to infotainment display backlight in 12 V vehicle electrical systems.

IC Role / Device Role / Timing Role: Low-R_DS(on) P-channel switch activated by CAN-linked microcontroller for dynamic brightness management.

Use Value: Delivers < 0.035 Ω on-resistance at -10 V gate drive, limiting thermal rise to < 10 °C above ambient at 3 A load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET load switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3481DV-T1-E3	Same TSOP-6 package; -20 V V_DS, 0.022 Ω R_DS(on) at -10 V, -7.5 A I_D	Limited to ≤ 15 V systems; higher current but lower voltage rating	Select when operating below 16 V and requiring lower conduction loss
DMN3026LSD-13	SO-8 package; -30 V V_DS, 0.032 Ω R_DS(on) at -10 V, -6.5 A I_D, 40 nC Q_g	Larger footprint; higher gate charge increases driver demand and switching loss	Choose when board space allows SO-8 and legacy layout reuse is prioritized

Compared with Si3481DV-T1-E3 and DMN3026LSD-13, the SI3483DV-T1-E3 uniquely balances -30 V rating, TSOP-6 compactness, and 23–35 nC gate charge-making it optimal for new 24 V portable designs where thermal density and gate drive efficiency are constrained.

Availability

SI3483DV-T1-E3 is available at Aetrix Electronics and suitable for battery-powered load switches, USB power controllers, and industrial I/O modules requiring stable component supply and RoHS-compliant sourcing.

Supply support for SI3483DV-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si3483DV belongs to Vishay's TrenchFET® P-channel MOSFET product line, engineered specifically for high-density DC-DC power distribution and robust reverse-polarity protection in space-limited industrial and portable electronics.

FAQ

What is the maximum gate-source voltage rating for SI3483DV-T1-E3?

The SI3483DV-T1-E3 has a maximum gate-source voltage rating of ±20 V, as specified in its Absolute Maximum Ratings table. Exceeding this voltage-even transiently-may cause irreversible gate oxide damage. Designers must ensure gate drive circuitry limits V_GS within this range during all operating and fault conditions. The SI3483DV-T1-E3 gate is not tolerant of voltage spikes beyond ±20 V, and no internal clamping is provided.

Can SI3483DV-T1-E3 be used in a high-side switch configuration?

Yes, the SI3483DV-T1-E3 can be used in high-side switch configurations, but requires gate drive voltage exceeding the source potential by at least |V_GS(th)| (≥ 3 V). Since it is P-channel, the gate must be pulled below the source to turn on-typically implemented with a charge pump or dedicated high-side driver. The SI3483DV-T1-E3 itself does not integrate level-shifting circuitry, so external support is mandatory for true high-side operation.

What is the typical R_DS(on) of SI3483DV-T1-E3 at V_GS = -4.5 V and T_J = 125 °C?

At V_GS = -4.5 V and T_J = 125 °C, the SI3483DV-T1-E3 exhibits a typical R_DS(on) of approximately 0.065 Ω, derived from the normalized R_DS(on) vs. temperature curve (1.4× increase from 25 °C value of 0.042 Ω) and confirmed by interpolation of datasheet plots. This value ensures predictable performance in thermally demanding environments like enclosed industrial enclosures.

Does SI3483DV-T1-E3 have built-in ESD protection?

The SI3483DV-T1-E3 does not include on-die ESD protection circuitry beyond inherent MOSFET gate oxide robustness. Its gate is rated for ±20 V absolute maximum, but ESD susceptibility remains high-HBM rating is not published in the datasheet. Therefore, handling and PCB layout must follow strict ESD controls: use grounded wrist straps, low-charge packaging, and minimize trace length between driver and gate. The SI3483DV-T1-E3 gate terminal is especially vulnerable during assembly and testing.

Is SI3483DV-T1-E3 suitable for automotive applications?

The SI3483DV-T1-E3 is not AEC-Q101 qualified and is not recommended for automotive safety-critical or engine-compartment applications. While its -55 to +150 °C operating range meets ambient temperature requirements, Vishay does not certify this part for automotive use, and no AEC-Q101 test reports or PPAP documentation are available. For automotive body electronics, designers should select explicitly AEC-Q101-qualified alternatives; the SI3483DV-T1-E3 remains appropriate for industrial and consumer-grade 24 V systems only.

SI3483DV-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 4.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 35mOhm @ 6.2A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.14W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3483DV-T1-E3 FAQ

1.How can I place an order for SI3483DV-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3483DV-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3483DV-T1-E3 reliable?

The price and inventory of SI3483DV-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3483DV-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI3483DV-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3483DV-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3483DV-T1-E3?

SI3483DV-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3483DV-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3483DV-T1-E3?

For technical support, including SI3483DV-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3483DV-T1-E3 requirements.

6.How does Aetrix verify that SI3483DV-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI3483DV-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3483DV-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI3483DV-T1-E3?

All SI3483DV-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3483DV-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3483DV-T1-E3 part is unused and in its original packaging.

Return procedure for SI3483DV-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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