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Vishay Siliconix SI3483DV-T1-GE3
- Part No.:
- SI3483DV-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3483DV-T1-GE3.pdf
- Description:
- MOSFET P-CH 30V 4.7A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:8,121
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Product details
Overview
SI3483DV-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -30 V drain-source voltage, 0.035 Ω RDS(on) at VGS = -10 V, and -6.2 A continuous drain current at TA = 25 °C. It serves as a low-side load switch in power management circuits with fast switching and low gate charge.
For engineers reviewing the SI3483DV-T1-GE3 datasheet, SI3483DV-T1-GE3 pinout, SI3483DV-T1-GE3 application, or SI3483DV-T1-GE3 equivalent, key selection criteria include its halogen-free and RoHS-compliant TSOP-6 package, guaranteed -1.0 V to -3.0 V gate threshold voltage, and verified thermal resistance of 90 °C/W (junction-to-ambient, steady state).
Technical Context
This device operates as a single P-channel MOSFET with trench-based silicon architecture optimized for low conduction loss and fast switching in DC load switching applications. Its gate drive compatibility with standard logic-level controllers (VGS = -4.5 V yields RDS(on) = 0.053 Ω) enables direct interface with microcontrollers and PMICs without level-shifting circuitry.
The TSOP-6 package integrates four parallel drain terminals (pins 1, 2, 5, 6), one source (pin 3), and one gate (pin 4), supporting high-current density routing and efficient heat transfer through the exposed drain pad. Thermal performance is characterized by RthJF = 25 °C/W (typical) from junction to foot.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for negative-rail switching in 24 V or lower systems |
| RDS(on) @ VGS = -10 V | 0.035 Ω - Enables ≤ 1.4 W conduction loss at -6.2 A, suitable for thermally constrained PCB layouts |
| ID (continuous, TA = 25 °C) | -6.2 A - Sustained load current capability without forced airflow or heatsinking |
| Qg | 23–35 nC - Low gate charge supports <15 ns rise/fall times with 6 Ω gate resistor, minimizing switching losses |
| VGS(th) | -1.0 to -3.0 V - Ensures reliable turn-on with 3.3 V or 5 V logic-level gate drivers |
| RthJA (steady state) | 90 °C/W - Predictable junction temperature rise under continuous operation on standard FR4 board |
Pinout & Package
TSOP-6 surface-mount package with exposed drain pad for thermal dissipation. Pin 1–2–5–6: Drain (common); Pin 3: Source; Pin 4: Gate.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Four parallel terminals reduce current density and parasitic inductance; connected to internal die drain metallization and exposed thermal pad |
| 3 | Source (S) | Reference node for gate drive and current return path; tied to system ground in low-side switch configuration |
| 4 | Gate (G) | Control input requiring ≤ ±20 V rating; low input capacitance (Ciss ≈ 1200 pF) enables fast edge-driven switching |
Key Features
| Feature | Design Value |
|---|---|
| Halogen-free construction | Complies with IEC 61249-2-21, eliminating brominated flame retardants for safer end-of-life processing |
| TrenchFET® technology | Enables 30 % lower RDS(on) vs. planar P-channel MOSFETs at same die size, improving power density |
| Low Qgd/Qg ratio | 6/23 ≈ 0.26 - Reduces Miller effect, enabling stable switching even with high dV/dt noise environments |
| Integrated body diode | VSD = -0.8 to -1.2 V at -1.7 A - Supports bidirectional current flow in reverse-battery protection and OR-ing circuits |
Applications
| Reverse Battery Protection | Hot-Swap Controller |
|---|---|
Use Scenario: Prevents damage when a battery is inserted backward into portable medical devices or handheld test equipment. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode in series with battery input rail. Use Value: Blocks reverse current at -30 V while maintaining <1.4 W loss during normal forward operation at full load. | Use Scenario: Enables safe insertion/removal of power modules in telecom line cards without disrupting upstream supply. IC Role / Device Role / Timing Role: Load switch controlling inrush current via controlled gate ramping. Use Value: 0.035 Ω RDS(on) limits voltage drop to <220 mV at 6.2 A, preserving downstream voltage margin. |
| USB Power Delivery Switch | Industrial PLC I/O Module |
Use Scenario: Isolates USB-C VBUS path during fault conditions in host-side PD controllers. IC Role / Device Role / Timing Role: High-side switch (with level shifter) managing 5–20 V power delivery negotiation. Use Value: Guaranteed -1.0 V VGS(th) ensures turn-on with 3.3 V logic, compatible with USB PD MCU GPIOs. | Use Scenario: Controls 24 V DC field power to sensor/actuator outputs in programmable logic controllers. IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays in digital output stages. Use Value: 25 A pulsed drain current rating supports brief motor startup surges without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si3481DV-T1-GE3 | RDS(on) = 0.022 Ω @ -10 V; higher -8.5 A ID; same TSOP-6 footprint | Better conduction efficiency in high-current (>6 A) loads; identical pinout and gate drive requirements | Select when thermal budget is tighter and peak current exceeds 6.2 A |
| DMN3026LSD-13 | RDS(on) = 0.026 Ω @ -10 V; -7.5 A ID; SO-8 package with different pinout | Requires PCB layout change; offers higher power dissipation margin due to larger package | Choose when board space allows SO-8 and higher continuous current is needed |
Compared with SI3483DV-T1-GE3, Si3481DV-T1-GE3 delivers lower conduction loss in identical layouts, while DMN3026LSD-13 trades pin compatibility for higher current handling and thermal headroom-neither is pin-compatible, but both serve overlapping load-switch use cases.
Availability
SI3483DV-T1-GE3 is available at Aetrix Electronics and suitable for reverse battery protection, hot-swap control, and USB power delivery switching requiring stable component supply across industrial and medical product lifecycles.
Supply support for SI3483DV-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with global manufacturing and reliability validation per MIL-STD and AEC-Q200 standards.
The Si348x family targets compact, high-efficiency DC power switching in space-constrained applications, emphasizing low RDS(on), fast switching, and halogen-free compliance for medical and industrial end equipment.
FAQ
What is the maximum gate-source voltage rating for SI3483DV-T1-GE3?
The SI3483DV-T1-GE3 has a maximum gate-source voltage rating of ±20 V, as specified in its Absolute Maximum Ratings table. Exceeding this limit risks permanent gate oxide damage. For robust operation, gate drive circuits should be clamped to stay within -20 V to +20 V, especially during transient events. The SI3483DV-T1-GE3 gate threshold voltage range (-1.0 V to -3.0 V) ensures reliable turn-on well below this absolute limit.
Does SI3483DV-T1-GE3 support logic-level gate drive?
Yes, the SI3483DV-T1-GE3 supports logic-level gate drive: it fully turns on with VGS = -4.5 V, delivering RDS(on) = 0.053 Ω at -5.0 A. This makes it compatible with 3.3 V and 5 V microcontroller GPIOs when used in inverting configurations. The SI3483DV-T1-GE3 gate threshold voltage starts as low as -1.0 V, ensuring strong enhancement-mode behavior without requiring external level shifters.
What is the thermal resistance from junction to ambient for SI3483DV-T1-GE3 under steady-state conditions?
The SI3483DV-T1-GE3 has a maximum junction-to-ambient thermal resistance (RthJA) of 110 °C/W under steady-state conditions on a 1" × 1" FR4 board, with a typical value of 90 °C/W. This value assumes standard JEDEC test conditions and defines the worst-case temperature rise per watt of power dissipated. For accurate thermal design, the SI3483DV-T1-GE3 datasheet also specifies RthJF = 30 °C/W (max) to the exposed drain foot.
Is SI3483DV-T1-GE3 suitable for reverse polarity protection in automotive applications?
The SI3483DV-T1-GE3 is rated for -30 V VDS and operates from -55 °C to +150 °C, meeting basic voltage and temperature requirements for 12 V automotive systems. However, it is not AEC-Q101 qualified. For production automotive applications, SI3483DV-T1-GE3 may be used in non-safety-critical subsystems (e.g., infotainment power rails) only after full qualification testing. Vishay does not list SI3483DV-T1-GE3 in its AEC-Q101 portfolio.
How does the body diode performance of SI3483DV-T1-GE3 compare to discrete Schottky diodes?
The SI3483DV-T1-GE3 body diode has a forward voltage (VSD) of -0.8 to -1.2 V at -1.7 A, which is higher than typical Schottky diodes (0.3–0.5 V). However, its integrated structure eliminates extra components and PCB area. In reverse-battery protection, the SI3483DV-T1-GE3 body diode conducts only during fault conditions, where its VSD is acceptable given short duration. For continuous forward conduction, an external Schottky remains preferable-but SI3483DV-T1-GE3 avoids that need in most load-switch topologies.
SI3483DV-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 6.2A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.14W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SI3483DV-T1-GE3 FAQ
1.How can I place an order for SI3483DV-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3483DV-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3483DV-T1-GE3 reliable?
The price and inventory of SI3483DV-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3483DV-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI3483DV-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3483DV-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3483DV-T1-GE3?
SI3483DV-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3483DV-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3483DV-T1-GE3?
For technical support, including SI3483DV-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3483DV-T1-GE3 requirements.
6.How does Aetrix verify that SI3483DV-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI3483DV-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3483DV-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI3483DV-T1-GE3?
All SI3483DV-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3483DV-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3483DV-T1-GE3 part is unused and in its original packaging.
Return procedure for SI3483DV-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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