My Inquiry
My Account
Vishay Siliconix SI3493BDV-T1-BE3
- Part No.:
- SI3493BDV-T1-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3493BDV-T1-BE3.pdf
- Description:
- P-CHANNEL 20-V (D-S) MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:8,402
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI3493BDV-T1-BE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET rated for -20 V drain-source voltage, 0.0275 Ω RDS(on) at VGS = -4.5 V, and -8.0 A continuous drain current (TC = 25 °C), designed for high-efficiency load switching in space-constrained DC-DC and battery management circuits.
For engineers reviewing the SI3493BDV-T1-BE3 datasheet, SI3493BDV-T1-BE3 pinout, SI3493BDV-T1-BE3 application, or SI3493BDV-T1-BE3 equivalent, this device is selected for low-voltage, high-side switching where gate drive compatibility with 2.5–4.5 V logic, fast turn-off (td(off) = 75 ns typ.), and robust body diode recovery (Qrr = 49.5 nC) are critical.
Technical Context
This TSOP-6 packaged MOSFET uses Vishay's TrenchFET® process to achieve low on-resistance and optimized gate charge (Qg = 26.2 nC at VGS = -4.5 V). Its -0.9 V typical gate threshold voltage (VGS(th)) enables reliable turn-on with standard logic-level drivers.
The device features a fully characterized source-drain body diode with VSD = -0.8 V at IS = -2.5 A and trr = 52 ns, supporting synchronous rectification and reverse-current blocking in bidirectional power paths without external diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum reverse-blocking capability for 12 V and 15 V rail applications |
| RDS(on) | 0.0275 Ω at VGS = -4.5 V - Enables <150 mW conduction loss at 8 A, reducing thermal stress |
| ID (cont.) | -8.0 A at TC = 25 °C - Supports high-current load switching without derating on minimal copper |
| Qg | 26.2 nC at VGS = -4.5 V - Low gate drive power requirement compatible with microcontroller GPIOs |
| td(off)/tf | 75 ns / 84 ns - Fast turn-off minimizes shoot-through risk in half-bridge configurations |
| VGS(th) | -0.9 V typ. - Ensures full enhancement with 2.5 V logic, eliminating need for level shifters |
| RthJA | 60 °C/W max - Requires ≤1.33 W dissipation at TA = 70 °C for safe operation on standard FR4 |
Pinout & Package
TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm footprint, 0.95 mm pitch, with exposed drain pad for thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | High-current output node; internally connected to exposed pad for low thermal resistance (RthJF = 35 °C/W) |
| 3 | Gate (G) | Control input; requires ≤±8 V rating; 100 % Rg tested for consistent switching behavior |
| 4 | Source (S) | Return path for load current; referenced to system ground in high-side switch configurations |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Power MOSFET | Enables 0.0275 Ω RDS(on) in TSOP-6, achieving >3× lower on-resistance than planar equivalents at same voltage rating |
| PWM Optimized | Low Qgd/Qg ratio (7.14/26.2 ≈ 0.27) reduces Miller-induced switching delay and improves duty-cycle fidelity |
| 100 % Rg Tested | Guarantees gate resistance ≤10 Ω, ensuring predictable rise/fall times across production lots |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC; suitable for consumer and industrial end-equipment without compliance risk |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Reverse-current blocking and over-discharge cutoff in single-cell Li-ion packs. IC Role / Device Role / Timing Role: High-side load switch controlling battery discharge path with integrated body diode reverse recovery (trr = 52 ns). Use Value: Eliminates need for external Schottky diode; 0.0275 Ω RDS(on) limits voltage drop to <220 mV at 8 A, preserving runtime. |
Use Scenario: VBUS enable/disable in USB-C DRP (dual-role port) implementations requiring 20 V tolerance. IC Role / Device Role / Timing Role: P-channel high-side switch driven directly by 3.3 V microcontroller GPIO. Use Value: -0.9 V VGS(th) ensures full turn-on at 3.3 V; 26.2 nC Qg allows <1 µs switching with 3 mA drive. |
| PA Bias Control in RF Modules | Hot-Swap Controller Back-End |
Use Scenario: Enabling/disabling power amplifier bias rails in cellular IoT modules during sleep/wake cycles. IC Role / Device Role / Timing Role: Low-leakage (IDSS = -1 µA) switch isolating PA supply to minimize standby current. Use Value: -20 V VDS rating accommodates transient spikes; -0.4 V min VGS(th) ensures clean turn-off at 0.8 V logic. |
Use Scenario: Inrush current limiting and fault isolation in 12 V industrial backplanes. IC Role / Device Role / Timing Role: Load switch with fast turn-off (tf = 84 ns) to interrupt faults before downstream protection triggers. Use Value: 2.08 W PD at TA = 25 °C supports 12 V/1.7 A operation without heatsink; RthJA = 60 °C/W enables thermal design margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si3483DV-T1-GE3 | RDS(on) = 0.032 Ω at VGS = -4.5 V; higher Qg = 32.5 nC; same TSOP-6 package | Lower current rating (-6.5 A) and slower switching limit use in high-frequency PWM loads | Select when halogen-free compliance is mandatory and 0.032 Ω RDS(on) is acceptable for reduced thermal budget |
| DMN2020LFG-7 | RDS(on) = 0.022 Ω at VGS = -4.5 V; smaller 2 mm × 2 mm DFN package; no exposed drain pad | Higher power density but inferior thermal performance (RthJA = 105 °C/W) requires aggressive PCB layout | Choose for ultra-compact designs where board area is constrained and thermal vias can be added under DFN pad |
Compared with Si3483DV-T1-GE3 and DMN2020LFG-7, the SI3493BDV-T1-BE3 delivers optimal balance of low RDS(on), proven thermal path via exposed drain, and logic-level gate drive-making it preferred for mid-power industrial load switching where reliability and ease of layout outweigh extreme miniaturization.
Availability
SI3493BDV-T1-BE3 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery systems, and RF PA bias control requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SI3493BDV-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on efficiency, reliability, and manufacturability.
The SI3493BDV-T1-BE3 belongs to Vishay's TrenchFET® Gen III P-channel MOSFET family, engineered specifically for low-voltage, high-current load switching in portable and industrial power management systems.
FAQ
What is the maximum continuous drain current for SI3493BDV-T1-BE3 at 70 °C case temperature?
The SI3493BDV-T1-BE3 supports -7.03 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOP-6 package under sustained power dissipation; designers must ensure adequate copper area or airflow to maintain case temperature within this limit for reliable operation of the SI3493BDV-T1-BE3.
Does SI3493BDV-T1-BE3 require a gate resistor for stable switching?
Yes-the SI3493BDV-T1-BE3 benefits from an external gate resistor (typically 1–10 Ω) to dampen ringing and control dV/dt during turn-on/turn-off. The datasheet specifies Rg = 1 Ω in dynamic timing test conditions (e.g., td(on), tr), and its 6.5–10 Ω typical gate resistance means uncontrolled drive can cause overshoot or EMI; proper gate resistor selection ensures robust switching of the SI3493BDV-T1-BE3 in real-world layouts.
Can SI3493BDV-T1-BE3 be used in a synchronous buck converter as a high-side switch?
No-the SI3493BDV-T1-BE3 is a P-channel MOSFET intended for high-side switching but lacks the fast, low-Qgd characteristics required for efficient synchronous buck top switches operating above 500 kHz. Its 7.14 nC Qgd and 26.2 nC Qg make it better suited for lower-frequency load switching (≤200 kHz); for synchronous buck, N-channel alternatives with dedicated gate drivers are recommended instead of the SI3493BDV-T1-BE3.
What is the body diode forward voltage of SI3493BDV-T1-BE3 at -2.5 A?
The body diode forward voltage (VSD) of the SI3493BDV-T1-BE3 is -0.8 V minimum and -1.2 V maximum at IS = -2.5 A and TJ = 25 °C, per the Drain-Source Body Diode Characteristics table. This low VSD enables efficient reverse-current conduction during dead-time intervals in half-bridge topologies using the SI3493BDV-T1-BE3.
Is SI3493BDV-T1-BE3 compliant with lead-free and halogen-free standards?
Yes-the SI3493BDV-T1-BE3 is lead (Pb)-free and halogen-free per IEC 61249-2-21, as confirmed in the Features section and Ordering Information. It carries the "-BE3" suffix denoting Vishay's halogen-free, RoHS-compliant packaging, making it suitable for consumer electronics and industrial equipment requiring strict environmental compliance without sacrificing electrical performance.
SI3493BDV-T1-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 7A (Ta), 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 27.5mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 43.5 nC @ 5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1805 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.08W (Ta), 2.97W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SI3493BDV-T1-BE3 FAQ
1.How can I place an order for SI3493BDV-T1-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3493BDV-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3493BDV-T1-BE3 reliable?
The price and inventory of SI3493BDV-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3493BDV-T1-BE3 is usually 5 days.
3.What payment methods are accepted for SI3493BDV-T1-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3493BDV-T1-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3493BDV-T1-BE3?
SI3493BDV-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3493BDV-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3493BDV-T1-BE3?
For technical support, including SI3493BDV-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3493BDV-T1-BE3 requirements.
6.How does Aetrix verify that SI3493BDV-T1-BE3 is sourced from the original manufacturer or authorized distributors?
All SI3493BDV-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3493BDV-T1-BE3 meets industry standards.
7.What is the process for return or replacement of SI3493BDV-T1-BE3?
All SI3493BDV-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3493BDV-T1-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3493BDV-T1-BE3 part is unused and in its original packaging.
Return procedure for SI3493BDV-T1-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI3493BDV-T1-BE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
