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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3493BDV-T1-GE3

Name: SI3493BDV-T1-GE3
Brand: Vishay Siliconix
SKU: SI3493BDV-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3493BDV-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3493BDV-T1-GE3.pdf

Description:: MOSFET P-CH 20V 8A 6TSOP

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Product details

Overview

SI3493BDV-T1-GE3 from Vishay Siliconix is a P-channel 20-V TrenchFET® MOSFET in TSOP-6 package, with R_DS(on) = 0.0275 Ω at V_GS = −4.5 V, −8.0 A continuous drain current (T_C = 25 °C), and 26.2 nC total gate charge - optimized for high-efficiency load switching in portable power management.

For engineers reviewing the SI3493BDV-T1-GE3 datasheet, SI3493BDV-T1-GE3 pinout, SI3493BDV-T1-GE3 application, or SI3493BDV-T1-GE3 equivalent, key selection criteria include its halogen-free and RoHS-compliant construction, PWM-optimized dynamic performance, and verified 100 % R_g testing for gate drive consistency in battery-switching circuits.

Technical Context

This device implements a trench-based P-channel enhancement-mode MOSFET architecture with negative threshold voltage (−0.4 to −0.9 V) and low gate-to-drain capacitance (C_rss = 245 pF), enabling fast turn-off and reduced Miller-induced shoot-through risk in high-side switch configurations.

Its thermal design supports steady-state junction-to-foot resistance of 35 °C/W and junction-to-ambient up to 60 °C/W (t ≤ 5 s), with body diode recovery time (t_rr = 52–78 ns) and Q_rr = 49.5–74.3 nC specified for synchronous rectification support in compact DC/DC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V - maximum blocking voltage for 12-V rail and Li-ion battery systems
R_DS(on)	0.0275 Ω @ V_GS = −4.5 V - enables <180 mW conduction loss at 7 A
I_D (cont)	−8.0 A @ T_C = 25 °C - supports high-current load switching without external heatsink
Q_g	26.2 nC @ V_GS = −4.5 V - ensures efficient PWM drive with low gate driver power demand
t_r/t_f	72/84 ns - enables >1 MHz switching in compact point-of-load regulators
V_GS(th)	−0.4 to −0.9 V - allows logic-level gate drive from 1.8–3.3 V controllers
t_rr	52–78 ns - supports synchronous rectification with minimal reverse recovery loss

Pinout & Package

TSOP-6 surface-mount package (3.05 mm × 2.85 mm × 1.0 mm), JEDEC MO-193C compliant, with exposed drain pad for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Common high-current output node; pins 1/2/5/6 internally connected to drain metallization and exposed pad
3	Gate (G)	Control input; requires negative bias relative to source to turn on; low C_iss (1805 pF) minimizes drive energy
4	Source (S)	Reference terminal for gate drive; tied to system ground or battery positive in high-side configuration

Key Features

Feature	Design Value
TrenchFET® architecture	Enables lower R_DS(on) per die area vs. planar MOSFETs, critical for space-constrained battery switches
PWM-optimized dynamics	Low Q_gd/Q_g ratio (7.14/26.2 ≈ 27 %) reduces switching transition time and EMI in pulse-width modulated loads
100 % R_g tested	Guarantees gate resistance ≤10 Ω, ensuring consistent turn-on timing across production lots
Halogen-free & RoHS	Complies with IEC 61249-2-21 and Directive 2002/95/EC - required for consumer electronics and medical devices

Applications

Battery Protection Circuit	USB Power Delivery Switch
Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: High-side load switch controlling battery discharge path; activated only when system voltage exceeds safe threshold. Use Value: Low R_DS(on) (0.0275 Ω) limits voltage drop to <200 mV at 7 A, preserving battery runtime and thermal margin.	Use Scenario: Enabling/disabling 5–20 V power paths in USB-C PD sink applications. IC Role / Device Role / Timing Role: P-channel high-side switch isolating VBUS from downstream circuitry during fault or negotiation. Use Value: Fast t_on/t_off (22/75 ns typical) supports rapid port role swap and dynamic power contract changes.
Smartphone Power Management	Wireless Earbud Charging Case
Use Scenario: Controlling power to RF power amplifiers (PA) during transmit/receive cycles. IC Role / Device Role / Timing Role: PA switch enabling/disabling RF stage supply to reduce standby current and improve Tx efficiency. Use Value: Low gate charge (26.2 nC) allows direct drive from baseband processor GPIO, eliminating dedicated gate driver IC.	Use Scenario: Isolating charging circuitry from battery during wireless charging to prevent backfeed. IC Role / Device Role / Timing Role: Load switch disconnecting battery from charging IC when Qi receiver is active. Use Value: −2.2 A rated current at V_GS = −1.8 V enables full functionality with ultra-low-power microcontrollers.

Battery Protection Circuit

USB Power Delivery Switch

Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: High-side load switch controlling battery discharge path; activated only when system voltage exceeds safe threshold.

Use Value: Low R_DS(on) (0.0275 Ω) limits voltage drop to <200 mV at 7 A, preserving battery runtime and thermal margin.

Use Scenario: Enabling/disabling 5–20 V power paths in USB-C PD sink applications.

IC Role / Device Role / Timing Role: P-channel high-side switch isolating VBUS from downstream circuitry during fault or negotiation.

Use Value: Fast t_on/t_off (22/75 ns typical) supports rapid port role swap and dynamic power contract changes.

Smartphone Power Management

Wireless Earbud Charging Case

Use Scenario: Controlling power to RF power amplifiers (PA) during transmit/receive cycles.

IC Role / Device Role / Timing Role: PA switch enabling/disabling RF stage supply to reduce standby current and improve Tx efficiency.

Use Value: Low gate charge (26.2 nC) allows direct drive from baseband processor GPIO, eliminating dedicated gate driver IC.

Use Scenario: Isolating charging circuitry from battery during wireless charging to prevent backfeed.

IC Role / Device Role / Timing Role: Load switch disconnecting battery from charging IC when Qi receiver is active.

Use Value: −2.2 A rated current at V_GS = −1.8 V enables full functionality with ultra-low-power microcontrollers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SI3483DV-T1-GE3	R_DS(on) = 0.032 Ω @ −4.5 V; higher Q_g = 32.5 nC; same TSOP-6 package	Slightly lower current rating (−7.0 A); less suitable for >6 A continuous loads	Choose when lower cost is prioritized over marginal R_DS(on) improvement
DMN2023LSD-13	R_DS(on) = 0.029 Ω @ −4.5 V; SO-8 package; higher thermal resistance (R_thJA = 70 °C/W)	Larger footprint; requires PCB copper pour for equivalent thermal performance	Prefer when existing SO-8 layout reuse is mandatory and board area is not constrained

Compared with SI3493BDV-T1-GE3, SI3483DV-T1-GE3 trades 16 % higher conduction loss for lower unit cost, while DMN2023LSD-13 offers similar R_DS(on) but demands more PCB area and thermal design effort - making SI3493BDV-T1-GE3 optimal for space- and efficiency-critical portable designs.

Availability

SI3493BDV-T1-GE3 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery systems, and smartphone power management requiring stable component supply, halogen-free compliance, and high-reliability P-channel switching.

Supply support for SI3493BDV-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si3493BDV product line delivers high-performance, halogen-free P-channel TrenchFET® MOSFETs engineered for compact, high-current load switching in portable and battery-powered systems.

FAQ

What is the maximum continuous drain current for SI3493BDV-T1-GE3 at 70 °C case temperature?

The SI3493BDV-T1-GE3 supports −7.03 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TSOP-6 package under sustained power dissipation, and must be validated against actual PCB copper area and ambient conditions in the final design. The SI3493BDV-T1-GE3 datasheet confirms this value is package-limited, not silicon-limited.

Does SI3493BDV-T1-GE3 require a negative gate drive voltage to operate?

Yes - the SI3493BDV-T1-GE3 is a P-channel enhancement-mode MOSFET with V_GS(th) ranging from −0.4 V to −0.9 V. To fully enhance the channel, the gate must be driven negative relative to the source (e.g., 0 V gate with source at +3.3 V). The SI3493BDV-T1-GE3 operates reliably down to V_GS = −1.8 V, supporting direct interface with 1.8 V logic controllers.

What is the body diode forward voltage of SI3493BDV-T1-GE3 at −2.5 A?

The body diode forward voltage (V_SD) of the SI3493BDV-T1-GE3 is −0.8 V to −1.2 V at I_S = −2.5 A and T_J = 25 °C, as specified in the Diode Characteristics section. This low V_SD reduces conduction loss during reverse-current events, such as inductive flyback or bidirectional power flow - a key parameter for evaluating the SI3493BDV-T1-GE3 in synchronous rectifier or battery-backup roles.

Is SI3493BDV-T1-GE3 suitable for use in automotive applications?

The SI3493BDV-T1-GE3 is not AEC-Q101 qualified and is not recommended for automotive safety-critical systems. Its operating junction temperature range (−55 to +150 °C) meets extended industrial requirements, but Vishay does not specify automotive-grade qualification, stress testing, or PPAP documentation for the SI3493BDV-T1-GE3. For automotive use, consult Vishay's AEC-Q101-certified P-channel portfolio instead.

How does the halogen-free status of SI3493BDV-T1-GE3 impact PCB assembly?

The SI3493BDV-T1-GE3 complies with IEC 61249-2-21 for halogen-free materials (Cl/Br < 900 ppm each, total halogens < 1500 ppm), which eliminates corrosive acid gas formation during soldering and end-of-life incineration. This enables compatibility with lead-free reflow profiles and satisfies environmental compliance for consumer, medical, and industrial products - no process changes are needed to assemble the SI3493BDV-T1-GE3 versus standard Pb-free variants.

SI3493BDV-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 27.5mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id:: 900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 43.5 nC @ 5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 1805 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.08W (Ta), 2.97W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3493BDV-T1-GE3 FAQ

1.How can I place an order for SI3493BDV-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3493BDV-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3493BDV-T1-GE3 reliable?

The price and inventory of SI3493BDV-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3493BDV-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI3493BDV-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3493BDV-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3493BDV-T1-GE3?

SI3493BDV-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3493BDV-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3493BDV-T1-GE3?

For technical support, including SI3493BDV-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3493BDV-T1-GE3 requirements.

6.How does Aetrix verify that SI3493BDV-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI3493BDV-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3493BDV-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI3493BDV-T1-GE3?

All SI3493BDV-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3493BDV-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3493BDV-T1-GE3 part is unused and in its original packaging.

Return procedure for SI3493BDV-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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