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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3493DDV-T1-GE3

Name: SI3493DDV-T1-GE3
Brand: Vishay Siliconix
SKU: SI3493DDV-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3493DDV-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3493DDV-T1-GE3.pdf

Description:: MOSFET P-CHANNEL 20V 8A 6TSOP

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Product details

Overview

SI3493DDV-T1-GE3 from Vishay Siliconix is a P-channel 20 V (D-S) TrenchFET® Gen III power MOSFET in TSOP-6 package, rated for -8 A continuous drain current at T_C = 25 °C and featuring R_DS(on) = 0.024 Ω at V_GS = -4.5 V. It serves as a low-voltage load switch or battery disconnect device in space-constrained mobile power systems.

For engineers reviewing the SI3493DDV-T1-GE3 datasheet, SI3493DDV-T1-GE3 pinout, SI3493DDV-T1-GE3 application, or SI3493DDV-T1-GE3 equivalent, key selection criteria include its -1.8 V gate-threshold compatibility, 100% R_g and UIS tested reliability, and thermal performance on FR4 with R_thJA ≤ 62.5 °C/W under pulsed conditions.

Technical Context

This MOSFET employs trench-based silicon architecture optimized for low R_DS(on) at logic-level gate drive (down to -1.8 V), enabling direct interface with 1.8 V/2.5 V microcontroller GPIOs without level shifting. Its single-channel configuration supports high-side switching in battery management circuits where source-referenced control is required.

The device integrates a robust body diode with t_rr = 21–32 ns and Q_rr = 9–18 nC, supporting synchronous rectification and reverse-current blocking in portable DC-DC architectures. Absolute maximum ratings include -20 V V_DS, ±8 V V_GS, and 150 °C T_J, aligning with JEDEC MO-193C TSOP-6 mechanical standards.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum drain-source blocking voltage for battery-switch applications up to 2-cell Li-ion stacks.
R_DS(on) @ V_GS = -4.5 V	0.024 Ω - Enables <190 mW conduction loss at -7.5 A, critical for thermally constrained handheld PCBs.
R_DS(on) @ V_GS = -1.8 V	0.0511 Ω - Supports direct logic-level drive from low-voltage MCUs without gate drivers.
Q_g typ.	19.8 nC - Low gate charge reduces switching energy and enables efficient PWM operation up to ~1 MHz.
I_D continuous @ T_C = 25 °C	-8 A - Sustains full load current when mounted on heatsinked copper area per Vishay's 1" × 1" FR4 test board.
R_thJC max.	35 °C/W - Defines junction-to-case thermal path for thermal design when using external heatsinking on drain pad.
V_GS(th)	-0.4 to -1.0 V - Guaranteed turn-on threshold ensures reliable enhancement-mode operation across temperature and process variation.

Pinout & Package

TSOP-6 surface-mount package (JEDEC MO-193C) with exposed drain pad for thermal and electrical connection; 3.05 mm × 2.85 mm footprint, 1.0 mm max height.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 6	Drain (D)	Common high-current output node; internally paralleled pins reduce resistance and improve thermal spreading to PCB copper.
3	Gate (G)	Control input; requires negative V_GS for turn-on; low C_iss = 1825 pF minimizes driver loading.
5	Source (S)	Reference terminal for gate drive and current sensing; tied to system ground or battery positive in high-side switch configurations.

Key Features

Feature	Design Value
TrenchFET® Gen III process	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for logic-level P-channel devices, reducing total switching + conduction losses.
100 % R_g and UIS tested	Ensures gate resistance consistency and avalanche ruggedness for unclamped inductive switching in real-world load-dump events.
Body diode t_rr = 21–32 ns	Minimizes reverse-recovery losses during bidirectional current flow in battery protection IC co-designs.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization standard (doc#99912).

Applications

Battery Management in Mobile Devices	Battery Switch
Use Scenario: Isolating main Li-ion battery from system during deep sleep or fault conditions in smartphones and tablets. IC Role / Device Role / Timing Role: High-side load switch controlled by PMIC or application processor GPIO. Use Value: Achieves <1 μA off-state leakage (I_DSS ≤ -1 μA) and fast turn-off (t_f ≤ 60 ns) to minimize standby power loss.	Use Scenario: Enabling/disabling power to USB-C port or accessory rail based on enumeration status. IC Role / Device Role / Timing Role: P-channel switch placed between battery and downstream 5 V rail. Use Value: R_DS(on) = 0.024 Ω at -4.5 V ensures <120 mV drop at 5 A, preserving voltage margin for USB PD compliance.
Load Switch	PA Switch
Use Scenario: Sequencing power to RF front-end modules or camera ISPs in multi-rail mobile SoC platforms. IC Role / Device Role / Timing Role: Standalone discrete load switch replacing integrated power switches for higher current or better thermal performance. Use Value: -8 A rating and 3.6 W P_D at T_C = 25 °C support sustained 6 A loads with minimal derating on 2 oz copper.	Use Scenario: Antenna switching or transmit/receive path isolation in LTE/Wi-Fi front-end modules. IC Role / Device Role / Timing Role: Low-R_DS(on) RF switch controlling bias to power amplifier stages. Use Value: Low C_oss = 210 pF and C_rss = 200 pF minimize signal distortion and insertion loss at sub-6 GHz frequencies.

Battery Management in Mobile Devices

Battery Switch

Use Scenario: Isolating main Li-ion battery from system during deep sleep or fault conditions in smartphones and tablets.

IC Role / Device Role / Timing Role: High-side load switch controlled by PMIC or application processor GPIO.

Use Value: Achieves <1 μA off-state leakage (I_DSS ≤ -1 μA) and fast turn-off (t_f ≤ 60 ns) to minimize standby power loss.

Use Scenario: Enabling/disabling power to USB-C port or accessory rail based on enumeration status.

IC Role / Device Role / Timing Role: P-channel switch placed between battery and downstream 5 V rail.

Use Value: R_DS(on) = 0.024 Ω at -4.5 V ensures <120 mV drop at 5 A, preserving voltage margin for USB PD compliance.

Load Switch

PA Switch

Use Scenario: Sequencing power to RF front-end modules or camera ISPs in multi-rail mobile SoC platforms.

IC Role / Device Role / Timing Role: Standalone discrete load switch replacing integrated power switches for higher current or better thermal performance.

Use Value: -8 A rating and 3.6 W P_D at T_C = 25 °C support sustained 6 A loads with minimal derating on 2 oz copper.

Use Scenario: Antenna switching or transmit/receive path isolation in LTE/Wi-Fi front-end modules.

IC Role / Device Role / Timing Role: Low-R_DS(on) RF switch controlling bias to power amplifier stages.

Use Value: Low C_oss = 210 pF and C_rss = 200 pF minimize signal distortion and insertion loss at sub-6 GHz frequencies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3483DV-T1-GE3	R_DS(on) = 0.019 Ω @ -4.5 V; lower Q_g = 16.5 nC; same TSOP-6 package.	Slightly higher cost; preferred where <150 mW conduction loss at 7 A is mandatory.	Select when optimizing for lowest possible R_DS(on) without changing layout or drive voltage.
DMN2011LFG-7	R_DS(on) = 0.022 Ω @ -4.5 V; different 6-DFN package (2 × 2 mm); no exposed drain pad.	Requires PCB land pattern change; better thermal performance on 2-layer boards due to bottom-side thermal pad.	Choose for new designs prioritizing ultra-compact footprint and improved θ_JA on dense layouts.

Compared with SI3493DDV-T1-GE3, Si3483DV-T1-GE3 offers marginally lower conduction loss but identical pinout and drive requirements, while DMN2011LFG-7 trades package compatibility for superior thermal resistance and smaller area-making it suitable only for greenfield designs.

Availability

SI3493DDV-T1-GE3 is available at Aetrix Electronics and suitable for battery management in mobile devices, battery switch circuits, and load switch applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SI3493DDV-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The SI3493DDV-T1-GE3 belongs to Vishay's TrenchFET® Gen III P-channel MOSFET family, engineered for high-efficiency, low-voltage load switching in portable and battery-powered electronics.

FAQ

What is the maximum continuous drain current rating for SI3493DDV-T1-GE3 at 70 °C case temperature?

The SI3493DDV-T1-GE3 supports -8 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal vias per Vishay's recommended land pattern (Doc#72610), and reflects derating from the -8 A value at 25 °C case temperature.

Does SI3493DDV-T1-GE3 require a gate driver when used with a 1.8 V microcontroller GPIO?

Yes, SI3493DDV-T1-GE3 is specifically characterized for V_GS = -1.8 V operation, with R_DS(on) = 0.0511 Ω guaranteed at that gate voltage. It can be driven directly by 1.8 V logic without an external gate driver, provided the MCU GPIO can sink sufficient current to charge Q_g = 19.8 nC within required switching times.

What is the safe operating area (SOA) limitation for SI3493DDV-T1-GE3 at DC and 10 ms pulse widths?

The SOA curve in the datasheet shows SI3493DDV-T1-GE3 is limited by R_DS(on) at DC (continuous operation), supporting up to -8 A at V_DS ≤ -2.5 V. At 10 ms pulses, it is limited by V_DS breakdown, allowing up to -20 V at currents below -1.5 A - confirming suitability for transient overvoltage protection in battery lines.

How does the body diode performance of SI3493DDV-T1-GE3 impact its use in reverse-polarity protection?

The SI3493DDV-T1-GE3 body diode has V_SD = -0.8 to -1.2 V at -6 A and t_rr = 21–32 ns, making it suitable for reverse-polarity protection where forward conduction is infrequent. However, for high-duty-cycle or high-frequency reverse-current paths, an external Schottky diode may be preferred to avoid body diode conduction losses.

Is SI3493DDV-T1-GE3 compliant with RoHS and REACH regulations?

Yes, SI3493DDV-T1-GE3 is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. Vishay documents this compliance under its material categorization standard (www.vishay.com/doc?99912), and the "-GE3" suffix explicitly denotes Green, lead-free, and halogen-free construction.

SI3493DDV-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 24mOhm @ 7.5A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 1825 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3493DDV-T1-GE3 FAQ

1.How can I place an order for SI3493DDV-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3493DDV-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3493DDV-T1-GE3 reliable?

The price and inventory of SI3493DDV-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3493DDV-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI3493DDV-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3493DDV-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3493DDV-T1-GE3?

SI3493DDV-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3493DDV-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3493DDV-T1-GE3?

For technical support, including SI3493DDV-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3493DDV-T1-GE3 requirements.

6.How does Aetrix verify that SI3493DDV-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI3493DDV-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3493DDV-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI3493DDV-T1-GE3?

All SI3493DDV-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3493DDV-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3493DDV-T1-GE3 part is unused and in its original packaging.

Return procedure for SI3493DDV-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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