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Vishay Siliconix SI3493DV-T1-E3
- Part No.:
- SI3493DV-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3493DV-T1-E3.pdf
- Description:
- MOSFET P-CH 20V 5.3A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,966
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Product details
Overview
SI3493DV-T1-E3 from Vishay Siliconix is a P-channel TrenchFET® power MOSFET rated for -20 V drain-source voltage, with RDS(on) = 0.027 Ω at VGS = -4.5 V and continuous drain current of -7 A at TA = 25 °C. It features ultra-low on-resistance, 1.8 V gate threshold compatibility, and TSOP-6 surface-mount packaging. It serves as a load switch in portable battery-powered systems requiring efficient low-voltage control.
For engineers reviewing the SI3493DV-T1-E3 datasheet, SI3493DV-T1-E3 pinout, SI3493DV-T1-E3 application, or SI3493DV-T1-E3 equivalent, key selection criteria include verified RDS(on) at 1.8 V/2.5 V/4.5 V gate drive, thermal resistance (RthJA = 90 °C/W steady-state), and TSOP-6 footprint compatibility with load-switch PCB layouts.
Technical Context
This device operates as a single P-channel enhancement-mode MOSFET with trench-based silicon architecture optimized for low-voltage switching. Its gate threshold voltage (VGS(th) = -0.4 to -1.0 V) enables direct interface with 1.8 V logic controllers, while its RDS(on) remains stable across -55 to 150 °C junction temperature range.
The TSOP-6 package integrates drain-connected thermal pad (RthJF = 25 °C/W typical) and supports pulsed drain currents up to -20 A. Dynamic parameters-including Qg = 21 nC (typ.), td(on) = 20 ns, and tf = 85 ns-confirm suitability for high-speed load switching with minimal gate drive energy.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V maximum - defines safe blocking capability in negative-rail load-switch applications |
| RDS(on) @ VGS = -4.5 V | 0.027 Ω typical - enables <150 mW conduction loss at 7 A DC load current |
| ID (continuous, TA = 25 °C) | -7 A - supports high-current battery disconnect or PA bias switching without derating |
| Qg | 21 nC typical - allows fast turn-on with low-power gate drivers (e.g., microcontroller GPIO) |
| VGS(th) | -0.4 to -1.0 V - ensures reliable enhancement-mode turn-on with 1.8 V logic-level signals |
| RthJA (steady-state) | 90 °C/W - determines thermal rise under 1 W dissipation on standard FR4 PCB |
| Package | TSOP-6 - 3 mm × 2.85 mm footprint with exposed drain pad for thermal management |
Pinout & Package
TSOP-6 package with exposed drain pad (pin 4 connected to drain). Standard JEDEC MO-187AC outline, 0.95 mm nominal height, lead (Pb)-free matte tin plating per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source | Main current return path; tied to system ground or battery negative in high-side switch configurations |
| 2 | Gate | Control input; requires no level-shifting when driven by 1.8–4.5 V logic sources |
| 3 | Source | Second source connection - internally bonded to pin 1 for lower source inductance |
| 4 | Drain | Main power output; thermally coupled to exposed pad for heat dissipation |
| 5 | Drain | Second drain connection - internally bonded to pin 4 to reduce channel resistance and inductance |
| 6 | Drain | Third drain connection - completes low-inductance, high-current drain path to PCB thermal plane |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 0.027 Ω RDS(on) at -4.5 V gate drive while maintaining robust short-circuit ruggedness |
| 1.8 V gate-rated operation | Guarantees turn-on with standard I/O voltages from modern MCUs and PMICs without external level shifters |
| Halogen-free construction | Meets IEC 61249-2-21 requirements for environmentally compliant end-product manufacturing |
| Ultra-low Qg/Qgd ratio | Qgd = 6 nC of total 21 nC Qg minimizes Miller-induced switching delays in high-frequency load control |
| RoHS-compliant and Pb-free | Qualified per Directive 2002/95/EC; compatible with lead-free reflow profiles (JEDEC J-STD-020) |
Applications
| Smartphone Power Management | Wireless Headset Battery Switching |
|---|---|
Use Scenario: Isolating main Li-ion battery from RF power amplifier during sleep mode to minimize standby leakage. IC Role / Device Role: High-side load switch controlling PA supply rail with fast turn-off (<100 ns fall time). Use Value: Reduces quiescent current by >95% versus always-on configuration; enabled by 0.048 Ω RDS(on) at VGS = -1.8 V. |
Use Scenario: Enabling/disabling charging path between USB-C port and internal battery in true wireless stereo (TWS) earbuds. IC Role / Device Role: Reverse-polarity protected battery switch with integrated body diode forward voltage ≤ -1.2 V. Use Value: Eliminates need for external Schottky diode; VSD = -0.7 to -1.2 V at -1.7 A reduces insertion loss and thermal stress. |
| Industrial Sensor Node Power Gating | USB Peripheral Port Protection |
Use Scenario: Cycling power to MEMS accelerometer and BLE radio in battery-operated condition monitoring nodes. IC Role / Device Role: Low-duty-cycle load switch triggered by MCU GPIO with minimal gate charge demand. Use Value: Qg = 21 nC allows full turn-on using 1 mA peak gate current - compatible with low-drive-strength I/O pins. |
Use Scenario: Preventing backfeed from downstream USB devices into host controller during hot-plug events. IC Role / Device Role: Reverse-current blocking switch placed between VBUS and downstream load. Use Value: -20 V VDS rating withstands USB transient surges; RDS(on) = 0.027 Ω limits voltage drop to <190 mV at 7 A fault current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305UVT-7 | RDS(on) = 0.045 Ω @ -4.5 V; higher Qg = 28 nC; SOT-23-6 package (smaller footprint, lower thermal mass) | Lower current rating (-4.2 A); less suitable for sustained 7 A loads without aggressive heatsinking | Prefer when board space is constrained and peak current ≤ 4 A; verify RthJA = 150 °C/W does not exceed TJ limit |
| AO3401 | RDS(on) = 0.085 Ω @ -4.5 V; VGS(th) = -0.7 to -1.3 V; same TSOP-6 package | Higher conduction loss (>2×) at 7 A; slower switching (tf = 120 ns) due to larger Qgd | Select only if cost sensitivity outweighs efficiency and speed; confirm VGS(th) distribution meets 1.8 V logic margin |
Compared with DMG2305UVT-7 and AO3401, the SI3493DV-T1-E3 delivers superior thermal performance (RthJA = 90 °C/W vs. ≥150 °C/W), lowest RDS(on) in its class, and guaranteed 1.8 V turn-on-making it optimal for compact, high-efficiency battery-switching designs where layout area and thermal headroom are limited.
Availability
SI3493DV-T1-E3 is available at Aetrix Electronics and suitable for smartphone power management, wireless headset battery switching, and industrial sensor node power gating requiring stable component supply and RoHS-compliant, lead-free procurement.
Supply support for SI3493DV-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.
The Si3493DV series belongs to Vishay's TrenchFET® low-voltage P-channel MOSFET product line, engineered specifically for high-efficiency load switching in space-constrained, battery-powered consumer and industrial electronics.
FAQ
What is the maximum continuous drain current for SI3493DV-T1-E3 at 85 °C ambient temperature?
The SI3493DV-T1-E3 supports -3.6 A continuous drain current at TA = 85 °C with proper PCB copper area. This rating assumes mounting on a 1" × 1" FR4 board per datasheet test conditions. Derating is required above this temperature; the device's RthJA = 90 °C/W means each watt of power dissipation raises junction temperature by 90 °C above ambient. For sustained 7 A operation, active cooling or enhanced thermal vias are recommended.
Does SI3493DV-T1-E3 support 1.8 V logic-level gate drive?
Yes, the SI3493DV-T1-E3 is explicitly rated for 1.8 V gate drive: its VGS(th) range is -0.4 to -1.0 V, and RDS(on) = 0.048 Ω is specified at VGS = -1.8 V with ID = -3 A. This guarantees full enhancement and low on-resistance when driven directly from 1.8 V I/O ports without level shifting-confirmed in the "On-Resistance vs. Gate-to-Source Voltage" characteristic curve on page 3 of the datasheet.
What is the thermal resistance from junction to foot (RthJF) for SI3493DV-T1-E3?
The SI3493DV-T1-E3 has a typical junction-to-foot (drain) thermal resistance of 25 °C/W under steady-state conditions, with a maximum of 30 °C/W. This parameter reflects heat transfer from the silicon die to the exposed drain pad (pin 4), making it critical for estimating temperature rise when the device is soldered to a thermal plane. It is significantly lower than RthJA, confirming the importance of proper PCB thermal design for high-power operation.
Is SI3493DV-T1-E3 halogen-free and RoHS-compliant?
Yes, the SI3493DV-T1-E3 is both halogen-free per IEC 61249-2-21 and RoHS-compliant per Directive 2002/95/EC. The "E3" suffix denotes lead (Pb)-free construction with matte tin plating, and the device is qualified for lead-free reflow per JEDEC J-STD-020. These compliance attributes are explicitly stated in the ordering information and features section of the Vishay datasheet (Document Number: 71936, Rev. D).
What are the absolute maximum ratings for gate-source voltage on SI3493DV-T1-E3?
The SI3493DV-T1-E3 has an absolute maximum gate-source voltage (VGS) rating of ±8 V. Exceeding this value-even briefly-may cause irreversible gate oxide damage. Designers must ensure gate drive circuits include clamping (e.g., Zener diodes) or limiting resistors to prevent overshoot during fast switching or ESD events. This rating is independent of the device's 1.8 V logic compatibility; it defines the physical breakdown limit, not the functional operating range.
SI3493DV-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 27mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 32 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SI3493DV-T1-E3 FAQ
1.How can I place an order for SI3493DV-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3493DV-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3493DV-T1-E3 reliable?
The price and inventory of SI3493DV-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3493DV-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI3493DV-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3493DV-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3493DV-T1-E3?
SI3493DV-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3493DV-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3493DV-T1-E3?
For technical support, including SI3493DV-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3493DV-T1-E3 requirements.
6.How does Aetrix verify that SI3493DV-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI3493DV-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3493DV-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI3493DV-T1-E3?
All SI3493DV-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3493DV-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3493DV-T1-E3 part is unused and in its original packaging.
Return procedure for SI3493DV-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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