My Inquiry
My Account
Vishay Siliconix SI3493DV-T1-GE3
- Part No.:
- SI3493DV-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3493DV-T1-GE3.pdf
- Description:
- MOSFET P-CH 20V 5.3A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:9,469
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI3493DV-T1-GE3 from Vishay Siliconix is a P-channel TrenchFET® power MOSFET rated for -20 V drain-source voltage, with 0.027 Ω RDS(on) at VGS = -4.5 V and -7 A continuous drain current. It features ultra-low on-resistance, 1.8 V gate threshold compatibility, and is optimized for high-efficiency load switching in portable battery-powered systems.
For engineers reviewing the SI3493DV-T1-GE3 datasheet, SI3493DV-T1-GE3 pinout, SI3493DV-T1-GE3 application, or SI3493DV-T1-GE3 equivalent, key selection criteria include its halogen-free and RoHS-compliant TSOP-6 package, -1.0 V typical gate threshold, and verified performance in battery disconnect and RF PA switching circuits.
Technical Context
This device operates as a logic-level P-channel enhancement-mode MOSFET with trench-based silicon architecture. Its gate threshold voltage of -0.40 to -1.0 V enables direct drive from 1.8 V and 2.5 V microcontrollers, while the integrated body diode supports reverse-current blocking in bidirectional power paths.
The TSOP-6 package provides low thermal resistance (RthJA = 45 °C/W, t ≤ 5 s) and supports surface-mount assembly on FR4 boards. Dynamic parameters-including 21 nC total gate charge and 6 nC gate-drain charge-enable fast switching with minimal drive loss in high-frequency load control applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum drain-source blocking voltage for battery-side switch isolation |
| RDS(on) | 0.027 Ω @ VGS = -4.5 V - Enables <150 mW conduction loss at 7 A load current |
| ID (cont) | -7 A @ TA = 25 °C - Supports high-current load switching without external heatsinking |
| VGS(th) | -0.40 to -1.0 V - Ensures reliable turn-on with 1.8 V logic-level gate drive |
| Qg | 21 nC (typ.) - Reduces gate driver power demand and switching transition time |
| PD | 2.0 W @ TA = 25 °C - Sustains full-load operation under standard PCB mounting conditions |
| RthJA | 45 °C/W (t ≤ 5 s) - Delivers rapid thermal response during pulsed load events |
Pinout & Package
TSOP-6 surface-mount package with exposed drain pad for enhanced thermal dissipation and mechanical stability on FR4 PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Source terminal | Common return path for load current; tied to system ground or battery negative in high-side switch configuration |
| 2 (Gate) | Control input | Receives logic-level gate drive; requires no level-shifting when driven by 1.8–3.3 V controllers |
| 3 (Drain) | Power output | Connected to battery or supply rail; electrically and thermally coupled to exposed pad |
| 4 (Source) | Source terminal | Parallel source connection to Pin 1; reduces source inductance and improves current sharing |
| 5 (Drain) | Power output | Parallel drain connection to Pin 3; lowers on-resistance and enhances thermal conduction |
| 6 (Drain) | Power output | Third parallel drain connection; maximizes current handling and thermal interface area |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 0.027 Ω RDS(on) at -4.5 V gate drive, reducing conduction losses in compact battery switches |
| Halogen-free & RoHS-compliant | Fulfills IEC 61249-2-21 and EU Directive 2002/95/EC requirements for environmentally regulated end equipment |
| Low VGS(th) (-0.40 to -1.0 V) | Guarantees turn-on with 1.8 V I/O rails, eliminating need for gate boosters in ultra-low-voltage systems |
| Integrated body diode | Supports reverse-current protection and freewheeling in bidirectional power management without external diodes |
| TSOP-6 thermal design | Exposes drain metal to PCB copper, achieving 45 °C/W junction-to-ambient transient thermal resistance |
Applications
| Battery Protection Switch | RF Power Amplifier Switch |
|---|---|
Use Scenario: Disconnecting Li-ion battery packs during overvoltage, overtemperature, or short-circuit fault conditions. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as main battery isolation switch controlled by fuel gauge or protection IC. Use Value: Ultra-low RDS(on) minimizes voltage drop and self-heating during sustained 7 A discharge, preserving battery runtime and safety margin. | Use Scenario: Enabling/disabling RF power amplifier stages in cellular handsets and IoT transceivers. IC Role / Device Role / Timing Role: Fast-switching P-channel load switch placed between PA bias rail and DC supply. Use Value: 21 nC Qg and 30 ns rise time enable sub-microsecond PA activation, reducing transmit latency and idle power consumption. |
| USB-C Port Power Switch | Industrial Sensor Node Power Gate |
Use Scenario: Controlling VBUS power delivery to downstream USB-C peripherals with overcurrent protection. IC Role / Device Role / Timing Role: Load switch managing 5 V/3 A power path with reverse-current blocking capability. Use Value: Body diode forward voltage of -0.7 V ensures low-loss reverse conduction during hot-plug events, preventing bus collapse. | Use Scenario: Power gating wireless sensor nodes during deep-sleep cycles to extend multi-year battery life. IC Role / Device Role / Timing Role: Low-quiescent-current P-channel switch isolating MCU, radio, and analog front-end from battery. Use Value: Gate leakage < ±100 nA and zero-gate-voltage IDSS < -1 µA prevent standby current degradation over temperature and time. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si3483DV-T1-GE3 | Higher RDS(on) (0.042 Ω @ -4.5 V), same TSOP-6 package and VGS(th) range | Lower current rating (-5.3 A) limits use in >5 A battery switches | Select when lower cost is prioritized over conduction loss in <5 A applications |
| DMN2019LSD-13 | 0.024 Ω RDS(on) @ -4.5 V but higher VGS(th) (-1.2 to -2.2 V); SO-8 package | Larger footprint and higher gate drive requirement reduce suitability for space-constrained portable designs | Choose only if board layout allows SO-8 and controller supports ≥2.2 V gate swing |
Compared with Si3483DV-T1-GE3 and DMN2019LSD-13, the SI3493DV-T1-GE3 delivers the lowest RDS(on) in TSOP-6 for 7 A loads, enabling smaller PCB area and lower thermal rise without sacrificing logic-level drive compatibility.
Availability
SI3493DV-T1-GE3 is available at Aetrix Electronics and suitable for battery protection systems, RF front-end power management, and USB-C port power switching requiring stable component supply and long-term industrial availability.
Supply support for SI3493DV-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si3493DV product line targets high-density portable electronics, delivering logic-level P-channel MOSFETs optimized for battery-powered load switching with minimal board space and thermal overhead.
FAQ
What is the maximum continuous drain current for SI3493DV-T1-GE3 at 85 °C ambient?
The SI3493DV-T1-GE3 supports -3.6 A continuous drain current at TA = 85 °C with proper PCB copper area. This rating reflects derating due to thermal resistance limitations and assumes surface mounting on a 1" × 1" FR4 board per the datasheet test condition. The device's RthJA of 90 °C/W (steady state) governs this limit, and actual performance may improve with enhanced thermal vias or larger copper pours.
Does SI3493DV-T1-GE3 require a gate resistor for ESD protection?
No, the SI3493DV-T1-GE3 integrates gate protection diodes and is rated for ±2 kV HBM ESD per JESD22-A114. A series gate resistor is not required for ESD robustness but may be used to dampen ringing during fast switching. Typical designs use 0–10 Ω resistors depending on drive strength and layout parasitics, as validated in Vishay's application note AN807.
Can SI3493DV-T1-GE3 be used in reverse polarity protection circuits?
Yes, the SI3493DV-T1-GE3 is commonly deployed in reverse polarity protection due to its P-channel topology and low RDS(on). When placed in the positive rail with source tied to input and drain to load, it blocks reverse voltage while conducting forward current with minimal drop. Its -20 V VDS rating supports 12 V and 15 V input systems with safety margin.
What is the safe operating area (SOA) limitation for SI3493DV-T1-GE3 at DC operation?
At DC, the SI3493DV-T1-GE3 SOA is limited by RDS(on) and thermal dissipation. For example, at VDS = -5 V and ID = -7 A, power dissipation reaches 35 W-far exceeding its 2.0 W steady-state rating. Therefore, DC operation must stay within the derated boundary defined by PD = 2.0 W at 25 °C ambient, corresponding to ~-6.3 A at -5 V or ~-4.5 A at -10 V.
Is SI3493DV-T1-GE3 compatible with lead-free reflow profiles?
Yes, the SI3493DV-T1-GE3 is qualified for standard lead-free reflow per JEDEC J-STD-020, with peak temperature up to 260 °C. Its "T1" tape-and-reel packaging and "GE3" suffix confirm halogen-free, lead-free construction compliant with IPC/JEDEC standards. No special prebake or moisture sensitivity handling is required beyond MSL1 classification.
SI3493DV-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 27mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 32 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SI3493DV-T1-GE3 FAQ
1.How can I place an order for SI3493DV-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3493DV-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3493DV-T1-GE3 reliable?
The price and inventory of SI3493DV-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3493DV-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI3493DV-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3493DV-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3493DV-T1-GE3?
SI3493DV-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3493DV-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3493DV-T1-GE3?
For technical support, including SI3493DV-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3493DV-T1-GE3 requirements.
6.How does Aetrix verify that SI3493DV-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI3493DV-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3493DV-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI3493DV-T1-GE3?
All SI3493DV-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3493DV-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3493DV-T1-GE3 part is unused and in its original packaging.
Return procedure for SI3493DV-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI3493DV-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
