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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3499DV-T1-E3

Name: SI3499DV-T1-E3
Brand: Vishay Siliconix
SKU: SI3499DV-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3499DV-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3499DV-T1-E3.pdf

Description:: MOSFET P-CH 8V 5.3A 6TSOP

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Product details

Overview

SI3499DV-T1-E3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET optimized for low-voltage load switching in portable electronics, featuring -8 V V_DS, 0.023 Ω R_DS(on) at -4.5 V V_GS, and -7 A continuous drain current at 25 °C - deployed in battery-powered USB peripherals and power rails requiring 1.5 V logic-level gate drive.

For engineers reviewing the SI3499DV-T1-E3 datasheet, SI3499DV-T1-E3 pinout, SI3499DV-T1-E3 application, or SI3499DV-T1-E3 equivalent, key selection criteria include its TSOP-6 package footprint, -1.5 V minimum gate threshold, ultra-low on-resistance at sub-2.5 V drive, and compliance with RoHS and halogen-free standards per IEC 61249-2-21.

Technical Context

This device operates as a single P-channel enhancement-mode MOSFET with trench-based silicon architecture enabling stable conduction down to V_GS = -1.5 V. Its gate threshold voltage range (-0.35 V to -0.75 V) ensures reliable turn-on with standard logic outputs, while the integrated body diode supports reverse-current paths in bidirectional power control.

The TSOP-6 package provides low thermal resistance (R_thJA = 90 °C/W steady-state) and surface-mount compatibility for high-density PCB layouts. Dynamic parameters-including 28 nC total gate charge and 40 ns turn-on delay-support efficient switching in DC-DC converter synchronous rectification and hot-swap circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-8 V maximum drain-source voltage - defines safe blocking capability in 5 V and lower rail applications
R_DS(on)	0.023 Ω at V_GS = -4.5 V - enables <150 mW conduction loss at 7 A, critical for thermal management in compact devices
I_D (cont)	-7 A at T_A = 25 °C - supports high-current load switching without external heatsinking in handheld form factors
V_GS(th)	-0.35 to -0.75 V - guarantees turn-on with 1.5 V–1.8 V logic families, eliminating need for level shifters
Q_g	28 nC typical - balances switching speed and gate driver loading for 1–5 MHz operation in power management ICs
T_J Range	-55 to +150 °C - qualified for extended temperature operation in automotive infotainment and industrial sensors

Pinout & Package

TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm footprint, 0.95 mm pitch, with exposed drain pad for thermal dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	High-current output node; internally connected to exposed pad - must be soldered to large copper pour for thermal performance
3	Gate (G)	Control input; requires <±5 V rating and low-impedance drive to minimize switching losses
4	Source (S)	Reference node for gate drive and current return path; tied to system ground or negative rail in high-side switch configurations

Key Features

Feature	Design Value
1.5 V rated gate drive	Operates fully enhanced with V_GS ≥ -1.5 V - eliminates need for gate boosters in 1.8 V/2.5 V microcontroller systems
Ultra-low R_DS(on)	0.023 Ω @ -4.5 V reduces I²R losses by >40% vs. legacy P-ch MOSFETs in portable power switches
100% R_g tested	Gate resistance 4–13 Ω verified per unit - ensures consistent switching timing and EMI behavior across production lots
Halogen-free construction	Complies with IEC 61249-2-21 - meets environmental requirements for consumer electronics and medical wearables

Applications

USB Power Delivery Switching	Smartphone Battery Protection
Use Scenario: Controlling VBUS power path between USB-C port and internal PMIC during plug/unplug events. IC Role / Device Role / Timing Role: High-side load switch managing inrush current and reverse polarity protection. Use Value: 0.023 Ω R_DS(on) limits voltage drop to <160 mV at 7 A, preserving PD negotiation signaling integrity.	Use Scenario: Isolating main Li-ion cell from system during overvoltage or short-circuit fault conditions. IC Role / Device Role / Timing Role: Primary discharge path switch activated by battery management IC's fault signal. Use Value: -0.75 V max V_GS(th) ensures fast turn-on under weak pull-up bias from BMS comparator outputs.
Wireless Headset Charging Control	IoT Sensor Node Power Gating
Use Scenario: Enabling/disabling charging circuitry during sleep mode to reduce quiescent current below 1 µA. IC Role / Device Role / Timing Role: Low-leakage power gate driven directly by MCU GPIO with 1.5 V logic. Use Value: -1 µA IDSS at -8 V V_DS prevents standby battery drain, extending shelf life beyond 12 months.	Use Scenario: Powering RF transceiver only during scheduled transmission windows in LPWAN nodes. IC Role / Device Role / Timing Role: Fast-switching supply enable controlled by real-time OS scheduler. Use Value: 40 ns td(on) and 100 ns tr support <10 µs power-up latency, minimizing active-mode energy overhead.

USB Power Delivery Switching

Smartphone Battery Protection

Use Scenario: Controlling VBUS power path between USB-C port and internal PMIC during plug/unplug events.

IC Role / Device Role / Timing Role: High-side load switch managing inrush current and reverse polarity protection.

Use Value: 0.023 Ω R_DS(on) limits voltage drop to <160 mV at 7 A, preserving PD negotiation signaling integrity.

Use Scenario: Isolating main Li-ion cell from system during overvoltage or short-circuit fault conditions.

IC Role / Device Role / Timing Role: Primary discharge path switch activated by battery management IC's fault signal.

Use Value: -0.75 V max V_GS(th) ensures fast turn-on under weak pull-up bias from BMS comparator outputs.

Wireless Headset Charging Control

IoT Sensor Node Power Gating

Use Scenario: Enabling/disabling charging circuitry during sleep mode to reduce quiescent current below 1 µA.

IC Role / Device Role / Timing Role: Low-leakage power gate driven directly by MCU GPIO with 1.5 V logic.

Use Value: -1 µA IDSS at -8 V V_DS prevents standby battery drain, extending shelf life beyond 12 months.

Use Scenario: Powering RF transceiver only during scheduled transmission windows in LPWAN nodes.

IC Role / Device Role / Timing Role: Fast-switching supply enable controlled by real-time OS scheduler.

Use Value: 40 ns td(on) and 100 ns tr support <10 µs power-up latency, minimizing active-mode energy overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3483DV-T1-E3	-20 V V_DS, 0.032 Ω R_DS(on) @ -4.5 V, same TSOP-6 package	Better voltage margin for 12 V auxiliary rails; higher R_DS(on) increases conduction loss at 5 V	Select when system requires >8 V blocking capability and can tolerate +39% on-resistance
DMN2053LSD-13	-20 V V_DS, 0.028 Ω R_DS(on) @ -4.5 V, SO-8 package (larger footprint)	Higher thermal mass supports 9 A continuous current but occupies 3× PCB area of TSOP-6	Select when board space permits larger package and higher current headroom is needed

Compared with Si3483DV-T1-E3 and DMN2053LSD-13, the SI3499DV-T1-E3 delivers optimal R_DS(on)/size trade-off for space-constrained 5 V portable designs, with lowest on-resistance in TSOP-6 and guaranteed -1.5 V gate compatibility - making it preferred for USB-C accessories and wearable power management.

Availability

SI3499DV-T1-E3 is available at Aetrix Electronics and suitable for USB-C power delivery modules, smartphone battery protection circuits, and wireless earbud charging control requiring stable component supply and full RoHS/halogen-free compliance.

Supply support for SI3499DV-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si3499DV product line targets ultra-compact, low-voltage load switching in battery-powered consumer electronics - engineered for minimal gate drive voltage, high current density, and environmental compliance.

FAQ

What is the maximum continuous drain current for SI3499DV-T1-E3 at 85 °C ambient?

The SI3499DV-T1-E3 supports -3.6 A continuous drain current at T_A = 85 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOP-6 package under natural convection; actual current capacity improves with PCB copper area and airflow. The SI3499DV-T1-E3 maintains stable R_DS(on) up to 150 °C junction temperature.

Does SI3499DV-T1-E3 have an integrated body diode, and what is its forward voltage?

Yes, the SI3499DV-T1-E3 includes an inherent parasitic body diode with V_SD = -0.63 to -1.1 V at I_S = -1.7 A and V_GS = 0 V. This diode enables reverse-current conduction in bidirectional power paths, such as USB OTG or battery backup circuits. The SI3499DV-T1-E3 body diode recovery time is 40–70 ns, supporting moderate-frequency switching.

Is SI3499DV-T1-E3 compatible with 1.8 V GPIO outputs for gate drive?

Yes, the SI3499DV-T1-E3 is fully compatible with 1.8 V logic outputs: its V_GS(th) range (-0.35 V to -0.75 V) ensures strong enhancement at V_GS = -1.8 V, delivering 0.029 Ω R_DS(on) at -6.2 A. No level shifter is required, simplifying design for modern low-voltage MCUs. The SI3499DV-T1-E3 gate capacitance profile supports clean switching with standard 1.8 V drivers.

What is the thermal resistance from junction to ambient for SI3499DV-T1-E3 in steady-state operation?

The SI3499DV-T1-E3 has a maximum steady-state junction-to-ambient thermal resistance (R_thJA) of 110 °C/W, with a typical value of 90 °C/W when mounted on a 1" × 1" FR4 board per datasheet test condition. This value assumes standard solder mask-defined copper pour; adding thermal vias under the exposed drain pad reduces R_thJA by ~25%. The SI3499DV-T1-E3 thermal performance is validated per JEDEC JESD51-2.

How does the gate charge of SI3499DV-T1-E3 impact switching efficiency in a 2 MHz DC-DC converter?

With Q_g = 28 nC typical, the SI3499DV-T1-E3 consumes ~56 µC of gate charge per switching cycle at 2 MHz, translating to ~112 mW gate drive loss with a 4 Ω driver. This is manageable for integrated PMIC gate drivers but may require external buffering in high-efficiency designs. The SI3499DV-T1-E3 Q_gd/Q_gs ratio of ~2.0 supports predictable Miller plateau timing, aiding EMI control in high-frequency converters.

SI3499DV-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 8 V

Current - Continuous Drain (Id) @ 25°C:: 5.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 23mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id:: 750mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 4.5 V

Vgs (Max):: ±5V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3499DV-T1-E3 FAQ

1.How can I place an order for SI3499DV-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3499DV-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3499DV-T1-E3 reliable?

The price and inventory of SI3499DV-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3499DV-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI3499DV-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3499DV-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3499DV-T1-E3?

SI3499DV-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3499DV-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3499DV-T1-E3?

For technical support, including SI3499DV-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3499DV-T1-E3 requirements.

6.How does Aetrix verify that SI3499DV-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI3499DV-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3499DV-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI3499DV-T1-E3?

All SI3499DV-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3499DV-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3499DV-T1-E3 part is unused and in its original packaging.

Return procedure for SI3499DV-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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