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Vishay Siliconix SI3499DV-T1-GE3
- Part No.:
- SI3499DV-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3499DV-T1-GE3.pdf
- Description:
- MOSFET P-CH 8V 5.3A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:5,318
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Product details
Overview
SI3499DV-T1-GE3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET optimized for low-voltage load switching in portable electronics, featuring -8 V VDS, 0.023 Ω RDS(on) at -4.5 V VGS, and -7 A continuous drain current at 25 °C - enabling efficient power control in space-constrained battery-powered systems.
For engineers reviewing the SI3499DV-T1-GE3 datasheet, SI3499DV-T1-GE3 pinout, SI3499DV-T1-GE3 application, or SI3499DV-T1-GE3 equivalent, key selection criteria include its 1.5 V gate threshold compatibility with low-voltage logic, TSOP-6 footprint for high-density PCB layouts, and halogen-free/RoHS-compliant construction required for modern consumer device certifications.
Technical Context
This P-channel MOSFET operates as a high-side load switch with gate drive compatible down to 1.5 V, supporting direct interface with 1.8 V and 2.5 V microcontroller I/O. Its trench-based silicon architecture delivers ultra-low on-resistance while maintaining tight VGS(th) distribution (-0.35 V to -0.75 V) and low gate charge (28 nC typical).
The device integrates a body diode with -0.63 V forward voltage at -1.7 A, enabling bidirectional current handling in reverse-polarity protection circuits. Thermal design is supported by a maximum junction-to-foot resistance of 30 °C/W, facilitating heat transfer through the exposed drain pad in TSOP-6 packages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -8 V - supports operation across full Li-ion battery range including overvoltage transients |
| RDS(on) | 0.023 Ω at VGS = -4.5 V - minimizes conduction loss in 3.3 V/2.5 V system rails |
| ID (continuous) | -7 A at TA = 25 °C - sustains peak load currents in USB-powered peripherals |
| VGS(th) | -0.75 V typical - ensures reliable turn-on with 1.8 V logic-level gate drive |
| Qg | 28 nC typical - enables fast switching with low gate driver power consumption |
| TJ range | -55 °C to +150 °C - qualified for extended temperature operation in handheld enclosures |
| PD | 2 W at TA = 25 °C - supports thermal management on standard FR4 without heatsinking |
Pinout & Package
TSOP-6 surface-mount package with exposed drain pad for thermal dissipation; 3 mm × 2.85 mm footprint compliant with JEDEC MO-193C standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Common high-current output node; internally connected to exposed pad for thermal conduction |
| 3 | Gate (G) | Control input requiring negative VGS for turn-on; low capacitance enables fast edge rates |
| 4 | Source (S) | Reference node tied to system VCC; body diode anode for reverse-current blocking |
Key Features
| Feature | Design Value |
|---|---|
| 1.5 V gate-rated trench architecture | Enables direct drive from 1.8 V GPIO without level-shifting circuitry |
| Ultra-low RDS(on) at low VGS | 0.036 Ω at -1.8 V VGS reduces I²R losses in always-on battery monitoring paths |
| 100 % Rg tested | Guarantees gate resistance between 4 Ω and 13 Ω for predictable switching timing |
| Halogen-free & RoHS-compliant | Fulfills IEC 61249-2-21 and EU Directive 2002/95/EC for global consumer product compliance |
| Exposed drain thermal pad | Reduces RthJF to 30 °C/W, allowing >1.5 W dissipation on 1" × 1" FR4 board |
Applications
| Smartphone Power Management | USB-C Port Protection |
|---|---|
Use Scenario: Isolating battery voltage from USB-C VBUS during OTG mode to prevent backfeed. IC Role / Device Role / Timing Role: High-side P-channel load switch controlling VBUS path with fast turn-off (<315 ns td(off)) to meet USB PD fault response requirements. Use Value: Prevents reverse current flow using integrated body diode with -0.63 V VSD, eliminating need for external Schottky. | Use Scenario: Enabling/disabling power delivery to peripheral accessories via USB-C receptacle. IC Role / Device Role / Timing Role: Low-RDS(on) P-channel switch placed between VBUS and downstream DC-DC converter input. Use Value: 0.023 Ω RDS(on) limits voltage drop to <160 mV at 7 A, preserving PD negotiation headroom. |
| Wireless Earbud Charging Case | IoT Sensor Node Power Gating |
Use Scenario: Controlling charging current from case battery to earbud PCB during magnetic docking. IC Role / Device Role / Timing Role: Load switch managing bidirectional current flow with body diode conducting during trickle-charge recovery. Use Value: -5.2 A rating at -1.8 V VGS supports 500 mA charging at 3.7 V with <200 mW conduction loss. | Use Scenario: Powering down BLE radio and environmental sensors during deep-sleep cycles. IC Role / Device Role / Timing Role: Always-on P-channel switch isolating 3.3 V rail from MCU-controlled enable signal. Use Value: -1 µA IDSS leakage at -8 V ensures <1 µA system standby current, extending battery life beyond 1 year. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si3483DV-T1-GE3 | -12 V VDS, 0.035 Ω RDS(on) at -4.5 V, same TSOP-6 package | Better overvoltage margin but higher on-resistance reduces efficiency at 3.3 V rails | Select when system requires >8 V transient tolerance and can accept 50% higher conduction loss |
| DMN2053LFG-7 | -20 V VDS, 0.045 Ω RDS(on) at -4.5 V, 2 mm × 2 mm DFN package | Smaller footprint but higher RDS(on) and no halogen-free marking per J-STD-609 | Choose for ultra-compact designs where thermal performance is secondary to board area |
Compared with SI3499DV-T1-GE3, Si3483DV-T1-GE3 trades lower on-resistance for higher voltage rating, while DMN2053LFG-7 sacrifices conduction efficiency for miniaturization - making SI3499DV-T1-GE3 optimal for cost-sensitive, thermally constrained 3.3 V portable applications requiring halogen-free compliance.
Availability
SI3499DV-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power management, USB-C port protection, and wireless earbud charging cases requiring stable component supply and consistent halogen-free manufacturing.
Supply support for SI3499DV-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si3499DV product line targets low-voltage load switching in portable electronics, designed specifically to replace mechanical switches and discrete transistor arrays in battery-powered devices with stringent size and environmental compliance requirements.
FAQ
What is the maximum continuous drain current for SI3499DV-T1-GE3 at 85 °C ambient temperature?
The SI3499DV-T1-GE3 supports -3.6 A continuous drain current at TA = 85 °C under steady-state conditions on a 1" × 1" FR4 board. This derating reflects thermal limitations of the TSOP-6 package and must be verified against actual PCB copper area and airflow in the final design. The SI3499DV-T1-GE3 datasheet specifies this value in the Absolute Maximum Ratings table under "Continuous Drain Current (TJ = 150 °C)".
Does SI3499DV-T1-GE3 support 1.8 V logic-level gate drive?
Yes, SI3499DV-T1-GE3 is rated for 1.5 V gate operation and guarantees -5.2 A drain current at VGS = -1.8 V, with RDS(on) = 0.036 Ω. Its VGS(th) range of -0.35 V to -0.75 V ensures robust turn-on with 1.8 V microcontroller outputs. The SI3499DV-T1-GE3 product summary confirms this capability in the RDS(on) vs. VGS table.
What is the thermal resistance from junction to ambient for SI3499DV-T1-GE3?
The SI3499DV-T1-GE3 has a maximum junction-to-ambient thermal resistance (RthJA) of 110 °C/W under steady-state conditions on a 1" × 1" FR4 board. For short-duration pulses (≤5 s), the typical RthJA is 45 °C/W. These values are specified in the Thermal Resistance Ratings table of the SI3499DV-T1-GE3 datasheet (Document Number 73138).
Is SI3499DV-T1-GE3 suitable for reverse polarity protection?
Yes, SI3499DV-T1-GE3 is commonly used for reverse polarity protection due to its P-channel configuration and integrated body diode with -0.63 V forward voltage at -1.7 A. When placed in the high-side position with source connected to input and drain to load, it blocks reverse current while conducting normally during correct polarity. The SI3499DV-T1-GE3 datasheet characterizes VSD in the Specifications table.
What does the "-GE3" suffix indicate in SI3499DV-T1-GE3?
The "-GE3" suffix in SI3499DV-T1-GE3 denotes lead (Pb)-free and halogen-free construction compliant with IEC 61249-2-21 and RoHS Directive 2002/95/EC. It distinguishes this variant from the "-E3" version (lead-free only) and confirms full environmental compliance required for consumer electronics sold in EU, China, and other regulated markets. This marking is explicitly stated in the ordering information section of the SI3499DV-T1-GE3 datasheet.
SI3499DV-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 8 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 23mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 750mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 42 nC @ 4.5 V
- Vgs (Max):
- ±5V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SI3499DV-T1-GE3 FAQ
1.How can I place an order for SI3499DV-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3499DV-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3499DV-T1-GE3 reliable?
The price and inventory of SI3499DV-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3499DV-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI3499DV-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3499DV-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3499DV-T1-GE3?
SI3499DV-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3499DV-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3499DV-T1-GE3?
For technical support, including SI3499DV-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3499DV-T1-GE3 requirements.
6.How does Aetrix verify that SI3499DV-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI3499DV-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3499DV-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI3499DV-T1-GE3?
All SI3499DV-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3499DV-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3499DV-T1-GE3 part is unused and in its original packaging.
Return procedure for SI3499DV-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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