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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3853DV-T1-E3

Name: SI3853DV-T1-E3
Brand: Vishay Siliconix
SKU: SI3853DV-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3853DV-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3853DV-T1-E3.pdf

Description:: MOSFET P-CH 20V 1.6A 6TSOP

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Product details

Overview

SI3853DV-T1-E3 from Vishay Siliconix is a P-channel 20-V MOSFET with integrated Schottky diode in TSOP-6 package, featuring R_DS(on) = 0.200 Ω at V_GS = −4.5 V, continuous drain current ±1.8 A, and Schottky forward voltage 0.48 V at 0.5 A - used in compact DC-DC converter high-side switches and load switching circuits.

For engineers reviewing the SI3853DV-T1-E3 datasheet, SI3853DV-T1-E3 pinout, SI3853DV-T1-E3 application, or SI3853DV-T1-E3 equivalent, this page delivers verified electrical parameters, thermal resistance values, MOSFET/Schottky co-packaging behavior, and validated alternative parts for space-constrained power management designs.

Technical Context

The SI3853DV-T1-E3 integrates a P-channel enhancement-mode MOSFET and a Schottky diode in a single TSOP-6 dielectrically isolated package, enabling synchronous rectification and reverse-polarity protection without external diodes. Its gate threshold voltage (−0.5 V typ.) supports logic-level drive from 3.3 V controllers, and body diode V_SD = −0.83 to −1.10 V ensures low-loss freewheeling.

Thermal design is enabled by separate R_thJA ratings: 130 °C/W (MOSFET, steady-state) and 140 °C/W (Schottky), with R_thJF = 75–90 °C/W for MOSFET foot cooling. Dynamic parameters include Q_g = 2.7–4.0 nC and t_r = 34–50 ns, supporting efficient 1–2 MHz switching in buck converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V - maximum blocking voltage for high-side switch operation in 12 V systems
R_DS(on)	0.200 Ω at V_GS = −4.5 V - enables <180 mW conduction loss at 1.8 A DC load
I_D (cont)	±1.8 A at T_A = 25 °C - supports sustained load switching in portable power rails
V_F (Schottky)	0.48 V at I_F = 0.5 A - reduces freewheeling loss vs. standard body diode (V_SD ≈ −0.95 V)
Q_g	2.7–4.0 nC - determines gate drive energy and switching speed in PWM control
R_thJA	130 °C/W (MOSFET) - defines thermal derating slope on 1" × 1" FR4 board
t_r/t_f	34–50 ns / 24–36 ns - enables clean edge transitions with minimal EMI in 1–2 MHz converters

Pinout & Package

TSOP-6 surface-mount package (3.0 mm × 2.85 mm × 1.1 mm), lead (Pb)-free, RoHS-compliant, halogen-free per IEC 61249-2-21.

Pin/Terminal	Circuit Role	Design Meaning
1 (D)	Drain (MOSFET)	Main current path for high-side switching; electrically tied to Schottky cathode (K)
2 (G)	Gate (MOSFET)	Controls MOSFET turn-on/off; requires negative V_GS for conduction
3 (N/C)	No Connect	Internally unconnected; must remain floating or grounded per layout best practice
4 (S)	Source (MOSFET)	Reference node for gate drive; tied to Schottky anode (A)
5 (K)	Cathode (Schottky)	Connected internally to Drain (Pin 1); provides low-V_F reverse path
6 (A)	Anode (Schottky)	Connected internally to Source (Pin 4); completes integrated diode path

Key Features

Feature	Design Value
Integrated Schottky diode	Eliminates need for external flyback diode in buck/boost converters, saving PCB area and BOM count
LITTLE FOOT® Plus package	Enables high-density routing with 0.95 mm pitch and thermal performance comparable to larger SO-8
Logic-level gate drive	V_GS(th) = −0.5 V typ. allows direct interface with 3.3 V microcontrollers or PWM ICs without level shifters
Low R_DS(on) × Q_g figure of merit	0.200 Ω × 3.35 nC = 0.67 Ω·nC - balances conduction and switching losses in medium-frequency SMPS
Separate thermal paths	Independent R_thJA and R_thJF ratings allow optimized heatsinking for MOSFET and Schottky sections

Applications

DC-DC Buck Converter High-Side Switch	Reverse-Polarity Protection Circuit
Use Scenario: Used as upper switch in non-synchronous buck regulator powering FPGA core voltage (1.2 V @ 1.5 A). IC Role / Device Role / Timing Role: P-channel MOSFET provides controlled power delivery during ON-time; integrated Schottky conducts during OFF-time freewheeling. Use Value: R_DS(on) = 0.200 Ω limits I²R loss to 450 mW; V_F = 0.48 V cuts diode conduction loss by ~50% vs. discrete body diode.	Use Scenario: Placed in series with input rail of USB-powered IoT sensor node to prevent damage from miswired adapters. IC Role / Device Role / Timing Role: Acts as active polarity guard: blocks reverse voltage while passing forward current with minimal drop. Use Value: V_F = 0.48 V at 0.5 A yields only 240 mV forward drop - lower than typical PMOS-only solutions with external diode.
Load Switch for Portable Battery Management	Hot-Swap Controller Auxiliary Path
Use Scenario: Enables/disables 3.3 V rail to BLE radio module in wearable device with soft-start and inrush control. IC Role / Device Role / Timing Role: Load switch with integrated reverse-blocking diode prevents backfeed during hot-plug events. Use Value: N/C pin (Pin 3) allows optional gate resistor placement for slew-rate control; R_DS(on) stability over −55 to 150 °C ensures reliability across operating range.	Use Scenario: Provides auxiliary current path in hot-swap controller IC during MOSFET gate ramp-up to limit inrush dv/dt. IC Role / Device Role / Timing Role: Fast-turning Schottky clamps transient overshoot while MOSFET gate charges. Use Value: trr = 20–40 ns ensures rapid recovery during repeated hot-insertion cycles; low C_iss minimizes capacitive loading on controller output.

DC-DC Buck Converter High-Side Switch

Reverse-Polarity Protection Circuit

Use Scenario: Used as upper switch in non-synchronous buck regulator powering FPGA core voltage (1.2 V @ 1.5 A).

IC Role / Device Role / Timing Role: P-channel MOSFET provides controlled power delivery during ON-time; integrated Schottky conducts during OFF-time freewheeling.

Use Value: R_DS(on) = 0.200 Ω limits I²R loss to 450 mW; V_F = 0.48 V cuts diode conduction loss by ~50% vs. discrete body diode.

Use Scenario: Placed in series with input rail of USB-powered IoT sensor node to prevent damage from miswired adapters.

IC Role / Device Role / Timing Role: Acts as active polarity guard: blocks reverse voltage while passing forward current with minimal drop.

Use Value: V_F = 0.48 V at 0.5 A yields only 240 mV forward drop - lower than typical PMOS-only solutions with external diode.

Load Switch for Portable Battery Management

Hot-Swap Controller Auxiliary Path

Use Scenario: Enables/disables 3.3 V rail to BLE radio module in wearable device with soft-start and inrush control.

IC Role / Device Role / Timing Role: Load switch with integrated reverse-blocking diode prevents backfeed during hot-plug events.

Use Value: N/C pin (Pin 3) allows optional gate resistor placement for slew-rate control; R_DS(on) stability over −55 to 150 °C ensures reliability across operating range.

Use Scenario: Provides auxiliary current path in hot-swap controller IC during MOSFET gate ramp-up to limit inrush dv/dt.

IC Role / Device Role / Timing Role: Fast-turning Schottky clamps transient overshoot while MOSFET gate charges.

Use Value: trr = 20–40 ns ensures rapid recovery during repeated hot-insertion cycles; low C_iss minimizes capacitive loading on controller output.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET-with-integrated-Schottky applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3457DV-T1-E3	R_DS(on) = 0.125 Ω at V_GS = −4.5 V; higher I_D = ±2.5 A; same TSOP-6 footprint	Better suited for 2 A loads with tighter thermal budgets; identical pinout and drive requirements	Select when higher current capacity and lower conduction loss are required without layout change
DMN2020LFG-7	P-channel only (no Schottky); R_DS(on) = 0.195 Ω; SOT-23-6 package; no integrated diode	Requires external Schottky for freewheeling; smaller footprint but higher BOM count and layout complexity	Choose when board space is critical and external diode integration is acceptable

Compared with SI3853DV-T1-E3, Si3457DV-T1-E3 offers lower R_DS(on) and higher current rating in identical packaging, while DMN2020LFG-7 trades integrated functionality for smaller size - making SI3853DV-T1-E3 optimal for balanced performance, integration, and thermal management in mid-power DC-DC stages.

Availability

SI3853DV-T1-E3 is available at Aetrix Electronics and suitable for DC-DC converters, reverse-polarity protection circuits, and portable load-switching applications requiring stable component supply, consistent parametric performance, and long-term industrial availability.

Supply support for SI3853DV-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si3853DV product line targets space-constrained power management applications where integration of MOSFET and Schottky diode reduces component count, improves thermal coupling, and simplifies layout - especially in battery-powered and USB-C peripheral designs.

FAQ

What is the maximum continuous drain current rating for SI3853DV-T1-E3 at 70 °C ambient temperature?

The SI3853DV-T1-E3 has a continuous drain current rating of ±1.5 A at T_A = 70 °C under steady-state conditions on a 1" × 1" FR4 board. This value reflects thermal derating from the ±1.8 A rating at 25 °C and accounts for junction-to-ambient thermal resistance of 130 °C/W. The SI3853DV-T1-E3 must be operated within this limit to maintain T_J ≤ 150 °C.

Does SI3853DV-T1-E3 include both MOSFET and Schottky diode functions in one package?

Yes, the SI3853DV-T1-E3 integrates a P-channel MOSFET and a Schottky diode in a single TSOP-6 package. The MOSFET's drain (Pin 1) connects internally to the Schottky cathode (K), and the source (Pin 4) connects to the Schottky anode (A). This co-packaging eliminates external diode placement and improves thermal coupling between switching and freewheeling elements in the SI3853DV-T1-E3.

What is the typical gate threshold voltage (V_GS(th)) of SI3853DV-T1-E3, and how does it affect drive compatibility?

The SI3853DV-T1-E3 has a typical gate threshold voltage of −0.5 V, with min/max specification not provided but confirmed functional down to −0.5 V. This logic-level threshold enables direct drive from 3.3 V GPIOs or PWM controllers without level-shifting circuitry. The SI3853DV-T1-E3 turns fully on at V_GS = −4.5 V, delivering its rated R_DS(on) of 0.200 Ω.

Can SI3853DV-T1-E3 be used in place of a standard P-channel MOSFET without Schottky integration?

Yes, the SI3853DV-T1-E3 can replace a discrete P-channel MOSFET in most applications, but its integrated Schottky diode introduces fixed internal connections: Drain ↔ Cathode and Source ↔ Anode. If the target circuit relies on an isolated body diode or requires independent diode placement, the SI3853DV-T1-E3 may require schematic revision. Its pinout and electrical behavior are fully compatible when the Schottky function is utilized or tolerated.

What is the Schottky forward voltage (V_F) of SI3853DV-T1-E3 at 125 °C junction temperature?

The SI3853DV-T1-E3 exhibits a Schottky forward voltage of 0.33–0.40 V at I_F = 0.5 A and T_J = 125 °C, per the datasheet's Schottky specifications table. This represents a reduction from the 0.42–0.48 V range at 25 °C, confirming negative temperature coefficient behavior typical of Schottky junctions. This characteristic improves efficiency in thermally stressed SI3853DV-T1-E3 applications.

SI3853DV-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: LITTLE FOOT®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 1.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 1.8A, 4.5V

Vgs(th) (Max) @ Id:: 500mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 4 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 830mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3853DV-T1-E3 FAQ

1.How can I place an order for SI3853DV-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3853DV-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3853DV-T1-E3 reliable?

The price and inventory of SI3853DV-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3853DV-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI3853DV-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3853DV-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3853DV-T1-E3?

SI3853DV-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3853DV-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3853DV-T1-E3?

For technical support, including SI3853DV-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3853DV-T1-E3 requirements.

6.How does Aetrix verify that SI3853DV-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI3853DV-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3853DV-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI3853DV-T1-E3?

All SI3853DV-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3853DV-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3853DV-T1-E3 part is unused and in its original packaging.

Return procedure for SI3853DV-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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