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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3879DV-T1-E3

Name: SI3879DV-T1-E3
Brand: Vishay Siliconix
SKU: SI3879DV-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3879DV-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3879DV-T1-E3.pdf

Description:: MOSFET P-CH 20V 5A 6TSOP

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Product details

Overview

SI3879DV-T1-E3 from Vishay Siliconix is a P-channel 20-V Schottky power MOSFET with integrated body diode, featuring R_DS(on) = 0.070 Ω at V_GS = −5.0 V, Q_g = 4.5 nC (typ.), and TSOP-6 package. It serves as an asynchronous rectifier in HDD DC-DC converters, delivering low conduction loss and fast switching.

For engineers reviewing the SI3879DV-T1-E3 datasheet, SI3879DV-T1-E3 pinout, SI3879DV-T1-E3 application, or SI3879DV-T1-E3 equivalent, key selection criteria include its −20 V V_DS, integrated Schottky forward voltage of 0.45 V at 1 A, thermal resistance R_thJA = 62.5 °C/W, and compliance with RoHS and halogen-free standards.

Technical Context

This device integrates a P-channel enhancement-mode MOSFET and a co-packaged Schottky diode in a single TSOP-6 dielectrically isolated structure. Its gate threshold voltage (V_GS(th)) ranges from −0.6 V to −1.5 V, enabling logic-level drive compatibility down to −2.5 V, while maintaining robust −20 V drain-source breakdown rating.

The dual-function design supports simultaneous MOSFET switching and Schottky rectification within one footprint: the MOSFET handles high-current synchronous/asynchronous switching (−5.0 A continuous at T_C = 25 °C), while the Schottky provides low-V_F (0.45 V typ.) recovery for efficiency-critical output stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V: Maximum blocking voltage for low-voltage DC-DC output stage placement.
R_DS(on)	0.070 Ω at V_GS = −5.0 V: Enables ≤350 mW conduction loss at 5 A load current.
Q_g	4.5 nC (typ. at V_GS = −4.5 V): Supports efficient 1–2 MHz switching in compact power supplies.
V_F (Schottky)	0.45 V at I_F = 1 A: Reduces rectifier loss vs. standard PN diodes by ~40% at light loads.
T_J Range	−55 to +150 °C: Qualified for industrial HDD and embedded storage environments.
R_thJA	62.5 °C/W: Requires minimal PCB copper area for thermal management in space-constrained layouts.
I_D (cont.)	−4.0 A at T_A = 25 °C: Sustains full-load operation on standard FR4 without heatsink.

Pinout & Package

TSOP-6 surface-mount package with exposed drain pad for thermal performance; 3 mm × 2.85 mm footprint, 1.1 mm max height.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Controls MOSFET channel turn-on/off; accepts −2.5 V to −12 V logic-level drive.
2 (S)	Source	Common reference node for MOSFET and Schottky cathode; connects to output rail.
3 (D/K)	Drain / Schottky Anode	Shared terminal: MOSFET drain and Schottky anode tied internally; connects to input/inductor node.
4 (D/K)	Drain / Schottky Anode	Second parallel connection to internal drain/anode node for lower inductance and improved thermal spreading.
5 (D/K)	Drain / Schottky Anode	Third parallel connection to internal drain/anode node; enhances current sharing and thermal dissipation.
6 (A)	Schottky Cathode	Independent Schottky cathode terminal; enables separate routing from MOSFET source for optimal layout.

Key Features

Feature	Design Value
LITTLE FOOT® Plus construction	TSOP-6 package with enhanced thermal performance over standard SO-8, reducing board area by 50%.
Integrated Schottky diode	Co-packaged 20 V / 2 A Schottky with 0.45 V forward drop eliminates external diode and saves BOM cost.
Low Q_g and C_iss	4.5 nC total gate charge and 480 pF input capacitance enable high-frequency PWM control with minimal driver loss.
RoHS and halogen-free	Complies with Directive 2002/95/EC and IEC 61249-2-21, supporting green manufacturing and end-of-life recycling.
Body diode with fast t_rr	25–40 ns reverse recovery time ensures minimal switching loss during dead-time conduction in buck topologies.

Applications

HDD DC-DC Converter	Asynchronous Rectifier
Use Scenario: Step-down conversion in 2.5-inch hard disk drive power modules supplying 3.3 V or 5 V rails. IC Role / Device Role / Timing Role: Asynchronous rectifier switch replacing discrete Schottky diode in buck converter secondary side. Use Value: 0.45 V Schottky V_F reduces conduction loss by >30% versus 0.7 V PN diode, improving efficiency at light-to-moderate loads.	Use Scenario: Secondary-side rectification in low-profile notebook adapter or USB-C PD auxiliary power supply. IC Role / Device Role / Timing Role: Dual-role component providing both MOSFET switching and Schottky rectification in single-stage topology. Use Value: Integrated structure eliminates layout mismatch between MOSFET and diode, minimizing parasitic inductance and EMI.
Industrial SSD Power Management	Compact Point-of-Load Regulator
Use Scenario: Input protection and hold-up regulation in M.2 NVMe solid-state drives operating from 12 V or 19 V bus. IC Role / Device Role / Timing Role: Reverse-polarity protection switch combined with low-loss output rectification path. Use Value: −20 V V_DS and −5.0 A rating support transient-tolerant 12 V input staging with minimal derating.	Use Scenario: 1–3 A point-of-load regulator on FPGA or ASIC carrier boards where board space is constrained. IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier alternative when controller lacks high-side drive capability. Use Value: TSOP-6 footprint fits within 10 mm² area; R_DS(on) = 0.070 Ω limits thermal rise to <25 °C at 3 A.

HDD DC-DC Converter

Asynchronous Rectifier

Use Scenario: Step-down conversion in 2.5-inch hard disk drive power modules supplying 3.3 V or 5 V rails.

IC Role / Device Role / Timing Role: Asynchronous rectifier switch replacing discrete Schottky diode in buck converter secondary side.

Use Value: 0.45 V Schottky V_F reduces conduction loss by >30% versus 0.7 V PN diode, improving efficiency at light-to-moderate loads.

Use Scenario: Secondary-side rectification in low-profile notebook adapter or USB-C PD auxiliary power supply.

IC Role / Device Role / Timing Role: Dual-role component providing both MOSFET switching and Schottky rectification in single-stage topology.

Use Value: Integrated structure eliminates layout mismatch between MOSFET and diode, minimizing parasitic inductance and EMI.

Industrial SSD Power Management

Compact Point-of-Load Regulator

Use Scenario: Input protection and hold-up regulation in M.2 NVMe solid-state drives operating from 12 V or 19 V bus.

IC Role / Device Role / Timing Role: Reverse-polarity protection switch combined with low-loss output rectification path.

Use Value: −20 V V_DS and −5.0 A rating support transient-tolerant 12 V input staging with minimal derating.

Use Scenario: 1–3 A point-of-load regulator on FPGA or ASIC carrier boards where board space is constrained.

IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier alternative when controller lacks high-side drive capability.

Use Value: TSOP-6 footprint fits within 10 mm² area; R_DS(on) = 0.070 Ω limits thermal rise to <25 °C at 3 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel Schottky MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3457DV-T1-E3	−30 V V_DS, R_DS(on) = 0.120 Ω @ −4.5 V, same TSOP-6 package	Better voltage margin for 24 V input systems; higher R_DS(on) increases conduction loss at 5 A	Select when input voltage exceeds 20 V; avoid if efficiency at 3–5 A is critical.
DMN2020LFG-7	−20 V V_DS, R_DS(on) = 0.085 Ω @ −4.5 V, no integrated Schottky, SOT-23-6 package	Requires external Schottky diode; smaller footprint but higher layout complexity and thermal resistance	Choose only when board area is more critical than BOM count and thermal performance.

Compared with SI3879DV-T1-E3, Si3457DV-T1-E3 trades higher voltage rating for increased conduction loss, while DMN2020LFG-7 sacrifices integration and thermal capability for minimal size-making SI3879DV-T1-E3 optimal for balanced efficiency, integration, and thermal reliability in 20 V-class HDD and SSD power stages.

Availability

SI3879DV-T1-E3 is available at Aetrix Electronics and suitable for HDD DC-DC converters, industrial SSD power management, and compact point-of-load regulators requiring stable component supply and long-term production continuity.

Supply support for SI3879DV-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The LITTLE FOOT® Plus product line delivers high-performance, space-saving power MOSFETs optimized for high-density computing, storage, and portable electronics where thermal and footprint constraints dominate design.

FAQ

What is the maximum continuous drain current for SI3879DV-T1-E3 at 70 °C ambient temperature?

The SI3879DV-T1-E3 supports −3.0 A continuous drain current at T_A = 70 °C when mounted on a 1" × 1" FR4 board. This rating derives from its R_thJA = 62.5 °C/W and 150 °C maximum junction temperature, ensuring safe operation without forced airflow or heatsinking in typical HDD enclosure environments. The SI3879DV-T1-E3 maintains this current capability across its full operating temperature range.

Does SI3879DV-T1-E3 include a Schottky diode, and how is it electrically connected?

Yes, the SI3879DV-T1-E3 integrates a 20 V, 2 A Schottky diode co-packaged with the P-channel MOSFET. Its anode is internally tied to pins 3, 4, and 5 (all labeled D/K), while its cathode is routed to pin 6 (labeled A). This configuration allows independent cathode routing from the MOSFET source (pin 2), enabling optimized PCB layout for reduced loop inductance in buck converter outputs. The SI3879DV-T1-E3 datasheet confirms this dual-terminal Schottky architecture in the pinout diagram and absolute maximum ratings table.

What is the gate threshold voltage range for SI3879DV-T1-E3, and how does it affect drive requirements?

The SI3879DV-T1-E3 has a gate threshold voltage (V_GS(th)) range of −0.6 V to −1.5 V at I_D = −250 µA, enabling reliable turn-on with logic-level gate drivers down to −2.5 V. This low threshold supports direct interfacing with 3.3 V microcontrollers or PWM controllers without level-shifting circuitry. At V_GS = −2.5 V, the SI3879DV-T1-E3 delivers R_DS(on) = 0.105 Ω, making it suitable for moderate-current applications where gate drive voltage is constrained.

How does the thermal resistance of SI3879DV-T1-E3 compare between junction-to-ambient and junction-to-foot?

The SI3879DV-T1-E3 exhibits R_thJA = 62.5 °C/W (max) and R_thJF = 37 °C/W (max) for the MOSFET section under steady-state conditions. The significantly lower junction-to-foot resistance indicates that heat transfer through the exposed drain pad (pins 3–5) dominates thermal performance-validating the need for adequate copper pour under the package. This thermal profile makes the SI3879DV-T1-E3 especially effective in thermally constrained HDD PCBs where airflow is limited and heatsinking is impractical.

Is SI3879DV-T1-E3 suitable for synchronous rectification, or is it limited to asynchronous use?

The SI3879DV-T1-E3 is designed for asynchronous rectification only. Its integrated Schottky diode operates independently of the MOSFET channel and cannot be actively controlled-unlike true synchronous rectifiers that require precise gate timing to avoid shoot-through. In buck converters, the SI3879DV-T1-E3 replaces the freewheeling diode while the high-side switch remains active; it does not replace both switches. For synchronous designs, discrete N-channel or dedicated synchronous rectifier ICs are required instead of the SI3879DV-T1-E3.

SI3879DV-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: LITTLE FOOT®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 70mOhm @ 3.5A, 4.5V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14.5 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 480 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 3.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3879DV-T1-E3 FAQ

1.How can I place an order for SI3879DV-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3879DV-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3879DV-T1-E3 reliable?

The price and inventory of SI3879DV-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3879DV-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI3879DV-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3879DV-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3879DV-T1-E3?

SI3879DV-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3879DV-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3879DV-T1-E3?

For technical support, including SI3879DV-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3879DV-T1-E3 requirements.

6.How does Aetrix verify that SI3879DV-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI3879DV-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3879DV-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI3879DV-T1-E3?

All SI3879DV-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3879DV-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3879DV-T1-E3 part is unused and in its original packaging.

Return procedure for SI3879DV-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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