Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4004DY-T1-GE3

Name: SI4004DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4004DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SI4004DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4004DY-T1-GE3.pdf

Description:: MOSFET N-CH 20V 12A 8-SOIC

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,607

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SI4004DY-T1-GE3 from Vishay Siliconix is an N-channel 20 V TrenchFET® Power MOSFET in SO-8 package, delivering 12 A continuous drain current at TC = 25 °C, 13.8 mΩ R_DS(on) at V_GS = 10 V, and 10.6 nC total gate charge. It serves as a high-efficiency synchronous rectifier or main switch in compact DC/DC converters.

For engineers reviewing the SI4004DY-T1-GE3 datasheet, SI4004DY-T1-GE3 pinout, SI4004DY-T1-GE3 application, or SI4004DY-T1-GE3 equivalent, key selection criteria include its 20 V V_DS, low R_DS(on) at 4.5 V drive, 100 % UIS-tested ruggedness, and SO-8 thermal performance under 11 A steady-state load.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in high-frequency buck regulators. Its gate threshold voltage (1.2–2.5 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while its 195 pF Crss and 1280 pF Ciss support stable operation up to 1 MHz switching.

The device integrates a robust body diode with 26–39 ns reverse recovery time and 15–23 nC Q_rr, making it suitable for synchronous rectification without external Schottky diodes. Thermal resistance R_thJF = 19 °C/W (typ.) ensures efficient heat transfer from junction to drain pad in PCB-mounted applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V input rails and transient margin in point-of-load converters
R_DS(on) @ V_GS = 10 V	0.0138 Ω - Enables ≤1.7 W conduction loss at 11 A, reducing thermal stress in SO-8 footprint
R_DS(on) @ V_GS = 4.5 V	0.0192 Ω - Supports direct drive from 5 V microcontrollers or PWM controllers without level-shifting
Q_g @ V_GS = 4.5 V	10.6 nC - Low gate charge minimizes driver power and enables efficient 500 kHz–1 MHz operation
I_D (continuous)	12 A @ T_C = 25 °C - Package-limited current rating suitable for 15–20 W DC/DC stages
E_AS	31 mJ - Avalanche-rated for reliable operation during inductive turn-off transients in non-synchronous designs

Pinout & Package

SO-8 surface-mount package with exposed drain pad for enhanced thermal dissipation. Pin 1–8 arranged in dual-row configuration with three source pins (1, 2, 3), one gate (4), and four drain pins (5, 6, 7, 8).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3 (S)	Source	Parallel low-inductance source connection; ties directly to power ground plane
4 (G)	Gate	Control terminal requiring <10.6 nC charge for full enhancement; sensitive to ESD
5, 6, 7, 8 (D)	Drain	High-current output node; pins 5–8 and exposed pad form low-resistance path to input rail

Key Features

Feature	Design Value
TrenchFET® construction	Enables 13.8 mΩ R_DS(on) in SO-8, outperforming planar MOSFETs by >25 % at same voltage class
100 % R_g tested	Guarantees gate resistance between 0.7–7.2 Ω, ensuring predictable turn-on/turn-off timing across production lots
100 % UIS tested	Validates avalanche energy handling up to 31 mJ per pulse, eliminating need for external snubbers in flyback designs
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated industrial and telecom equipment

Applications

Point-of-Load DC/DC Converter	USB-C Power Delivery Module
Use Scenario: High-density 5 V–12 V step-down regulator supplying FPGA core voltage with <100 µV ripple. IC Role / Device Role: Synchronous high-side switch operating at 600 kHz with 4.5 V gate drive from controller. Use Value: 0.0192 Ω R_DS(on) at 4.5 V reduces conduction loss by 35 % versus standard logic-level MOSFETs, improving efficiency from 92 % to 94.5 % at 8 A.	Use Scenario: 20 V input USB PD 3.0 buck converter delivering 9 V/3 A to portable devices. IC Role / Device Role: Main switching FET controlled by programmable PMIC with adaptive dead-time management. Use Value: 20 V V_DS rating accommodates 20 V ±10 % input transients; 31 mJ E_AS prevents failure during hot-plug surges.
Industrial Motor Driver Half-Bridge	Telecom Base Station DC Brick
Use Scenario: 24 V BLDC gate driver stage powering small fans or pumps in factory automation systems. IC Role / Device Role: Low-side switch in half-bridge topology, commutated at 25 kHz with bootstrap gate drive. Use Value: Fast 12 ns rise time and 9 ns fall time minimize switching losses; body diode t_rr = 26 ns supports clean freewheeling without shoot-through risk.	Use Scenario: 48 V input telecom DC/DC module converting to 12 V for board-level distribution. IC Role / Device Role: Secondary-side synchronous rectifier in forward converter, replacing Schottky diode. Use Value: 0.84 V V_SD body diode forward drop and 15 nC Q_rr reduce conduction loss by 40 % vs. 40 V Schottky, cutting thermal load on heatsink.

Point-of-Load DC/DC Converter

USB-C Power Delivery Module

Use Scenario: High-density 5 V–12 V step-down regulator supplying FPGA core voltage with <100 µV ripple.

IC Role / Device Role: Synchronous high-side switch operating at 600 kHz with 4.5 V gate drive from controller.

Use Value: 0.0192 Ω R_DS(on) at 4.5 V reduces conduction loss by 35 % versus standard logic-level MOSFETs, improving efficiency from 92 % to 94.5 % at 8 A.

Use Scenario: 20 V input USB PD 3.0 buck converter delivering 9 V/3 A to portable devices.

IC Role / Device Role: Main switching FET controlled by programmable PMIC with adaptive dead-time management.

Use Value: 20 V V_DS rating accommodates 20 V ±10 % input transients; 31 mJ E_AS prevents failure during hot-plug surges.

Industrial Motor Driver Half-Bridge

Telecom Base Station DC Brick

Use Scenario: 24 V BLDC gate driver stage powering small fans or pumps in factory automation systems.

IC Role / Device Role: Low-side switch in half-bridge topology, commutated at 25 kHz with bootstrap gate drive.

Use Value: Fast 12 ns rise time and 9 ns fall time minimize switching losses; body diode t_rr = 26 ns supports clean freewheeling without shoot-through risk.

Use Scenario: 48 V input telecom DC/DC module converting to 12 V for board-level distribution.

IC Role / Device Role: Secondary-side synchronous rectifier in forward converter, replacing Schottky diode.

Use Value: 0.84 V V_SD body diode forward drop and 15 nC Q_rr reduce conduction loss by 40 % vs. 40 V Schottky, cutting thermal load on heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	20 V V_DS, 0.0145 Ω R_DS(on) @ 10 V, but higher Q_g = 14.2 nC and no UIS rating	Lacks avalanche ruggedness; requires external clamping in inductive loads	Prefer SI4004DY-T1-GE3 where transient immunity is critical; IRF7470PBF suits low-cost, low-stress linear regulation
DMN2020LFG-7	20 V V_DS, 0.017 Ω R_DS(on) @ 4.5 V, smaller X1-DFN2020-6 package, no SO-8 thermal mass	Lower thermal inertia limits sustained 12 A operation; unsuitable for high-duty-cycle DC/DC	Select SI4004DY-T1-GE3 when board space allows SO-8 and thermal stability at 11 A is required

Compared with IRF7470PBF and DMN2020LFG-7, SI4004DY-T1-GE3 provides superior avalanche ruggedness and SO-8 thermal capacity for sustained 11 A loads, while maintaining lower gate charge than IRF7470PBF and higher current capability than DMN2020LFG-7's DFN package.

Availability

SI4004DY-T1-GE3 is available at Aetrix Electronics and suitable for point-of-load DC/DC converters, USB-C power delivery modules, and industrial motor driver half-bridges requiring stable component supply, lead-free compliance, and verified avalanche performance.

Supply support for SI4004DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The Si4004DY product line delivers logic-level N-channel MOSFETs optimized for high-efficiency, high-frequency DC/DC conversion in space-constrained applications where thermal performance and ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for SI4004DY-T1-GE3 at 70 °C case temperature?

The SI4004DY-T1-GE3 supports 12 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package-limited conduction capability under steady-state thermal conditions and is validated across production lots using 100 % UIS testing.

Does SI4004DY-T1-GE3 require a gate resistor for safe operation in a 600 kHz buck converter?

Yes - SI4004DY-T1-GE3 benefits from a gate resistor (typically 1–5 Ω) to control dV/dt and prevent ringing during 600 kHz switching. Its 0.7–7.2 Ω R_g (tested per unit) interacts with driver impedance; adding an external 2.2 Ω resistor ensures consistent 15 ns turn-on delay and 12 ns rise time as characterized in the datasheet.

Can SI4004DY-T1-GE3 be used as a replacement for a Schottky diode in synchronous rectification?

Yes - SI4004DY-T1-GE3 is routinely deployed as a synchronous rectifier due to its 0.84 V body diode forward voltage and 26 ns reverse recovery time. When actively driven, its 0.0192 Ω R_DS(on) at 4.5 V delivers lower conduction loss than a 40 V Schottky in 12 V output rails, provided gate timing avoids shoot-through.

What is the thermal resistance from junction to ambient for SI4004DY-T1-GE3 on a standard 1" × 1" FR4 board?

On a 1" × 1" FR4 board, SI4004DY-T1-GE3 exhibits R_thJA = 43 °C/W (typical) and 50 °C/W (maximum), as measured per JEDEC JESD51-2. This value assumes no additional copper pour beyond the footprint; adding thermal vias under the drain pad can improve R_thJA by up to 30 %.

Is SI4004DY-T1-GE3 rated for operation in automotive under-hood environments?

No - SI4004DY-T1-GE3 is qualified for industrial temperature range (−55 °C to +150 °C), but not AEC-Q101 automotive qualification. Its packaging and test coverage meet commercial/industrial reliability standards; for under-hood use, Vishay's AEC-Q101-qualified Si7157DP or Si7850DP are recommended alternatives.

SI4004DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 13.8mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 1280 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4004DY-T1-GE3 FAQ

1.How can I place an order for SI4004DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4004DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4004DY-T1-GE3 reliable?

The price and inventory of SI4004DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4004DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4004DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4004DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4004DY-T1-GE3?

SI4004DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4004DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4004DY-T1-GE3?

For technical support, including SI4004DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4004DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4004DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4004DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4004DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4004DY-T1-GE3?

All SI4004DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4004DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4004DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4004DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …