My Inquiry
My Account
Vishay Siliconix SI4010DY-T1-GE3
- Part No.:
- SI4010DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4010DY-T1-GE3.pdf
- Description:
- MOSFET N-CHANNEL 30V 31.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,340
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI4010DY-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Power MOSFET in SO-8 package, rated for 31.3 A continuous drain current at TC = 25 °C, with RDS(on) of 3.4 mΩ at VGS = 10 V and 4.4 mΩ at VGS = 4.5 V, used in synchronous rectification and DC/DC conversion stages.
For engineers reviewing the SI4010DY-T1-GE3 datasheet, SI4010DY-T1-GE3 pinout, SI4010DY-T1-GE3 application, or SI4010DY-T1-GE3 equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive, 100% UIS tested ruggedness, 22.5 nC total gate charge at 4.5 V, and SO-8 thermal performance with RthJF = 17 °C/W (typical).
Technical Context
This MOSFET employs trench-gate silicon technology optimized for high-efficiency power switching in compact surface-mount layouts. Its gate threshold voltage (1.0–2.3 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while the body diode exhibits trr = 36–70 ns and Qrr = 24–48 nC under defined test conditions.
The device supports pulsed drain currents up to 100 A (t = 300 μs), operates across –55 °C to +150 °C junction temperature range, and features guaranteed 100% Rg and UIS testing per production lot - critical for telecom server power supplies requiring high reliability under transient stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (Max) | 30 V - defines maximum blocking voltage in high-side or low-side switch configurations |
| RDS(on) @ 10 V | 3.4 mΩ (max) - enables <1 W conduction loss at 15 A in DC/DC output stage |
| RDS(on) @ 4.5 V | 4.4 mΩ (max) - ensures usable on-resistance with standard 5 V gate drivers |
| Qg @ 4.5 V | 22.5 nC (typ) - determines gate drive power and switching speed in PWM circuits |
| ID (Cont) @ TC=25°C | 31.3 A - specifies maximum steady-state current with heatsink attachment |
| RthJF (Typ) | 17 °C/W - indicates thermal path efficiency from junction to PCB copper foot |
| trr (Body Diode) | 36–70 ns - impacts reverse recovery losses in synchronous buck freewheeling |
Pinout & Package
SI4010DY-T1-GE3 is housed in a standard SO-8 (narrow) package per JEDEC MS-012, with exposed drain pad for thermal enhancement. Pin 1 is Gate, Pins 2–4 and 6–8 are Source and Drain terminals arranged in parallel configuration to reduce package inductance and improve current sharing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control input; requires ≤20 V drive; 0.5–1.25 Ω gate resistance affects turn-on/off timing |
| 2, 3, 4 | Source | Common source node; pins electrically tied internally; low-inductance return path |
| 5 | Drain | Main power output terminal; connected to internal die drain metallization |
| 6, 7, 8 | Drain | Parallel drain connections; reduce package resistance and thermal impedance to PCB |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables ultra-low RDS(on) at 4.5 V gate drive without sacrificing breakdown margin |
| 100% Rg and UIS tested | Guarantees gate robustness and avalanche energy handling (EAS = 20 mJ) per unit |
| SO-8 with exposed drain | Provides low RthJF (17 °C/W typ) for direct thermal coupling to PCB copper area |
| Lead (Pb)-free and halogen-free | Meets RoHS Directive 2011/65/EU and IEC 61249-2-21:2011 compliance requirements |
Applications
| Telecom Server PSU | Synchronous Buck Converter |
|---|---|
Use Scenario: High-density 48 V input / 12 V output DC/DC modules in carrier-grade telecom equipment. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 90 %. Use Value: 4.4 mΩ RDS(on) at 4.5 V enables >0.5 % efficiency gain over comparable 5 V-driven MOSFETs at 20 A load. | Use Scenario: Point-of-load (POL) converter supplying FPGA core voltage in industrial control systems. IC Role / Device Role / Timing Role: High-current power switch in 500 kHz buck stage with tight thermal constraints on 4-layer PCB. Use Value: 17 °C/W RthJF allows 31.3 A continuous operation with minimal external heatsinking when mounted on ≥1"² 2 oz Cu area. |
| Industrial Motor Drive | Hot-Swap Controller |
Use Scenario: Half-bridge leg in 24 V BLDC motor driver for factory automation actuators. IC Role / Device Role / Timing Role: High-side switch in three-phase inverter with bootstrap gate drive and fast body diode recovery. Use Value: 36–70 ns trr and 24–48 nC Qrr minimize shoot-through risk and reverse recovery loss during commutation. | Use Scenario: Inrush current limiter in redundant 12 V backplane supply with hot-plug capability. IC Role / Device Role / Timing Role: Load switch controlling power delivery to downstream modules during insertion/removal. Use Value: 30 V VDS rating and 100 A pulsed current support enable safe handling of capacitive load surges up to 10 ms duration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 3.8 mΩ @ 10 V; SO-8; no 4.5 V RDS(on) spec; higher Qg (32 nC @ 10 V) | Limited suitability for 5 V gate drive due to unspecified 4.5 V on-resistance | Prefer SI4010DY-T1-GE3 where 4.5 V drive and low Qg are required for high-frequency operation |
| DMN3025LSD-13 | RDS(on) = 2.5 mΩ @ 10 V; dual SO-8; 4.5 V RDS(on) = 3.5 mΩ; higher Ciss (4200 pF) | Higher input capacitance increases gate drive demand and slows switching vs. SI4010DY-T1-GE3 | Select SI4010DY-T1-GE3 for lower dynamic losses in 300–1000 kHz SMPS designs |
Compared with IRF7470PBF and DMN3025LSD-13, SI4010DY-T1-GE3 delivers superior 4.5 V drive capability, lower Qg for faster switching, and verified UIS ruggedness - making it optimal for space-constrained, high-efficiency telecom and industrial DC/DC converters where gate drive voltage headroom is limited.
Availability
SI4010DY-T1-GE3 is available at Aetrix Electronics and suitable for telecom server power supplies, industrial motor drives, synchronous buck converters, and hot-swap controllers requiring stable component supply and lead-free compliance.
Supply support for SI4010DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI4010DY-T1-GE3 belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-current, low-voltage DC/DC conversion in space-constrained infrastructure and industrial systems.
FAQ
What is the maximum continuous drain current for SI4010DY-T1-GE3 at 70 °C case temperature?
The maximum continuous drain current for SI4010DY-T1-GE3 is 24.9 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package without additional heatsinking. SI4010DY-T1-GE3 maintains stable RDS(on) performance across this range due to its trench-gate design and 100% UIS testing.
Does SI4010DY-T1-GE3 support logic-level gate drive?
Yes, SI4010DY-T1-GE3 supports logic-level gate drive with a gate threshold voltage (VGS(th)) ranging from 1.0 V to 2.3 V, enabling reliable turn-on using standard 3.3 V or 5 V microcontroller outputs. Its RDS(on) of 4.4 mΩ at VGS = 4.5 V confirms strong conduction performance under logic-level conditions - a key advantage of the SI4010DY-T1-GE3 in modern low-voltage power systems.
What is the body diode reverse recovery time (trr) of SI4010DY-T1-GE3?
The body diode reverse recovery time (trr) of SI4010DY-T1-GE3 is 36–70 ns, measured at IF = 10 A, dI/dt = 100 A/μs, and TJ = 25 °C. This fast recovery characteristic reduces switching losses in synchronous rectification applications. SI4010DY-T1-GE3 also specifies Qrr = 24–48 nC, supporting efficient freewheeling in high-frequency buck converters.
Is SI4010DY-T1-GE3 RoHS-compliant and halogen-free?
Yes, SI4010DY-T1-GE3 is explicitly designated as lead (Pb)-free and halogen-free in its ordering information, meeting RoHS Directive 2011/65/EU and IEC 61249-2-21:2011 requirements. This compliance is confirmed in Vishay's material categorization documentation referenced in the datasheet, ensuring SI4010DY-T1-GE3 is suitable for environmentally regulated industrial and telecom deployments.
What is the thermal resistance from junction to foot (RthJF) for SI4010DY-T1-GE3?
The typical junction-to-foot thermal resistance (RthJF) for SI4010DY-T1-GE3 is 17 °C/W, with a maximum of 21 °C/W, enabling efficient heat transfer from the die directly to the PCB copper via the exposed drain pad. This parameter is critical for estimating temperature rise in unheatsinked SO-8 layouts - a defining thermal advantage of SI4010DY-T1-GE3 over standard SO-8 MOSFETs without enhanced thermal foot design.
SI4010DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 31.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.4mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 77 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3595 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4010DY-T1-GE3 FAQ
1.How can I place an order for SI4010DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4010DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4010DY-T1-GE3 reliable?
The price and inventory of SI4010DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4010DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4010DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4010DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4010DY-T1-GE3?
SI4010DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4010DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4010DY-T1-GE3?
For technical support, including SI4010DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4010DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4010DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4010DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4010DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4010DY-T1-GE3?
All SI4010DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4010DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4010DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4010DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI4010DY-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
