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Vishay Siliconix SI4038DY-T1-GE3
- Part No.:
- SI4038DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4038DY-T1-GE3.pdf
- Description:
- MOSFET N-CH 40V 42.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,113
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Product details
Overview
SI4038DY-T1-GE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Power MOSFET in SO-8 package, rated for 42.5 A continuous drain current at TC = 25 °C, with RDS(on) of 2.4 mΩ at VGS = 10 V and 3.2 mΩ at VGS = 4.5 V, optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SI4038DY-T1-GE3 datasheet, SI4038DY-T1-GE3 pinout, SI4038DY-T1-GE3 application, or SI4038DY-T1-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance values, gate charge characteristics, body diode performance, and validated alternative options for power stage design validation and BOM optimization.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with 28 nC total gate charge at VGS = 4.5 V and 58–87 nC at VGS = 10 V. Its SO-8 package integrates four parallel drain terminals (pins 5–8) to reduce thermal resistance to 13 °C/W (junction-to-foot) and supports high-current PCB copper spreading per Application Note 808.
The device features 100 % Rg and UIS tested reliability, a gate-source threshold voltage of 1.0–2.1 V, and a body diode with 55–100 ns reverse recovery time and 55–100 nC Qrr, enabling robust operation in hard-switched and synchronous rectifier topologies without external snubbing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage; defines safe operating range in buck, boost, and half-bridge topologies. |
| RDS(on) @ VGS = 10 V | 2.4 mΩ max - Enables <1 W conduction loss at 20 A, critical for high-current synchronous rectifiers. |
| RDS(on) @ VGS = 4.5 V | 3.2 mΩ max - Ensures reliable turn-on with 5 V logic-level gate drive in 5 V control systems. |
| Qg @ VGS = 4.5 V | 28 nC typ - Low gate charge reduces driver power demand and switching losses in high-frequency DC/DC converters. |
| RthJF | 13 °C/W typ - Junction-to-foot thermal resistance enables direct heat transfer from drain leads to PCB copper, supporting >3 W dissipation without heatsink. |
| ID (continuous, TC = 25 °C) | 42.5 A - Confirmed steady-state current rating under case-cooled conditions, validated per JEDEC test board. |
| VGS(th) | 1.0–2.1 V - Threshold voltage range ensures predictable turn-on behavior across temperature and process variation. |
Pinout & Package
SO-8 narrow-body package (JEDEC MS-012), 5.0 mm × 4.0 mm footprint, 1.75 mm max height, lead (Pb)-free and halogen-free per JEDEC JS709A.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal; accepts 0–20 V gate drive; requires ≤1.15 Ω gate resistance for optimal switching speed. |
| 2, 3, 4 | Source | Common source node; pins 2–4 are internally bonded together and serve as return path for load current and body diode conduction. |
| 5, 6, 7, 8 | Drain | Parallel drain terminals; electrically and thermally tied to die drain; must be connected to large copper area for thermal management. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 2.4 mΩ RDS(on) in SO-8, enabling higher power density than planar MOSFETs in same package. |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress. |
| Low Qgd/Qg ratio (6.8/28 nC @ 4.5 V) | Reduces Miller-induced shoot-through risk and improves controllability in synchronous rectifier gate timing. |
| Body diode trr = 55–100 ns | Minimizes reverse recovery loss and EMI in hard-switched converters operating up to 500 kHz. |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709A, supporting environmentally compliant industrial and telecom designs. |
Applications
| Synchronous Rectifier in Isolated DC/DC | High-Current Buck Converter Output Stage |
|---|---|
|
Use Scenario: Used as secondary-side switch in 48 V–12 V isolated flyback or forward converter delivering up to 60 A. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by transformer-coupled or controller-synchronized gate signal. Use Value: Reduces conduction loss by >50 % vs. 40 V Schottky, improving efficiency from 92 % to 95 % at full load. |
Use Scenario: High-side or low-side switch in multiphase 12 V input, 1.2 V output CPU VRM supplying >300 A. IC Role / Device Role / Timing Role: Power switch in interleaved buck phase leg; operated at 300–600 kHz with 4.5 V gate drive. Use Value: 3.2 mΩ RDS(on) at 4.5 V enables efficient operation without level-shifting, reducing gate driver complexity. |
| Industrial DC/AC Inverter Half-Bridge | Automotive On-Board Charger (OBC) Primary Switch |
|
Use Scenario: Low-side switch in 200–400 V DC bus half-bridge driving motor loads in HVAC or pump inverters. IC Role / Device Role / Timing Role: Hard-switched N-channel switch; conducts continuous 30 A with 150 A pulsed capability. Use Value: 150 A pulsed drain current and 80 mJ avalanche energy support short-circuit withstand in IGBT-replacement configurations. |
Use Scenario: Primary-side switch in two-switch forward or LLC resonant stage of 6.6 kW OBC converting AC to 400 V DC. IC Role / Device Role / Timing Role: Fast-switching MOSFET handling 10–25 A RMS current at 100–300 kHz with zero-voltage switching assist. Use Value: 4070 pF Ciss and 210 pF Crss enable precise ZVS tuning while maintaining low gate drive loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 3.1 mΩ @ 10 V; SO-8; higher Qg (42 nC @ 4.5 V); no 100 % UIS test stated. | Higher gate charge increases driver loss; suitable where lower cost outweighs efficiency gain. | Prefer SI4038DY-T1-GE3 when minimizing conduction + switching loss is critical in high-frequency DC/DC. |
| DMN6040SSD-13 | RDS(on) = 3.8 mΩ @ 10 V; SO-8; lower VDS (60 V); Qg = 22 nC @ 4.5 V; different pinout (G-S-D-S-D-S-G-S). | Higher voltage rating adds margin but increases capacitance; non-compatible pinout requires PCB redesign. | Select SI4038DY-T1-GE3 for drop-in replacement in existing SO-8 layouts targeting 40 V systems with lowest RDS(on). |
Compared with IRF7470PBF and DMN6040SSD-13, SI4038DY-T1-GE3 offers the lowest RDS(on) in SO-8 at 40 V, best thermal resistance to foot, and fully validated UIS robustness-making it optimal for space-constrained, high-efficiency synchronous rectification where layout reuse and reliability are mandatory.
Availability
SI4038DY-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, DC/DC converters, and industrial DC/AC inverters requiring stable component supply, long-term lifecycle assurance, and traceable Pb-free sourcing.
Supply support for SI4038DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI4038DY-T1-GE3 belongs to Vishay's TrenchFET® Gen IV SO-8 power MOSFET family, engineered specifically for high-current, high-frequency switching in server VRMs, telecom power supplies, and industrial motor drives.
FAQ
What is the maximum continuous drain current rating for SI4038DY-T1-GE3 at 70 °C case temperature?
The SI4038DY-T1-GE3 supports 34 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limits under real-world heatsink or PCB copper cooling conditions and must be used in thermal design calculations alongside RthJF = 13 °C/W to ensure junction temperature remains below 150 °C.
Does SI4038DY-T1-GE3 support 5 V gate drive in logic-level applications?
Yes, SI4038DY-T1-GE3 is fully characterized for 4.5 V gate drive, with RDS(on) = 3.2 mΩ max and Qg = 28 nC typ at that voltage. Its VGS(th) range of 1.0–2.1 V ensures strong enhancement-mode turn-on with standard 5 V microcontroller or gate driver outputs, eliminating need for level shifters in many buck converter and synchronous rectifier designs.
How is thermal management implemented for SI4038DY-T1-GE3 in SO-8 package?
Thermal management for SI4038DY-T1-GE3 relies on its four-drain-pin (5–8) configuration, which connects directly to the MOSFET die drain and serves as primary thermal path. Vishay Application Note 808 mandates copper spreading beneath pins 5–8 using ≥1 in² of 2 oz copper, with thermal vias to inner layers-enabling up to 3.5 W dissipation at TA = 25 °C without external heatsink.
What is the body diode reverse recovery performance of SI4038DY-T1-GE3?
The SI4038DY-T1-GE3 body diode exhibits trr = 55–100 ns and Qrr = 55–100 nC at IF = 10 A, di/dt = 100 A/µs, and TJ = 25 °C. These values are measured and guaranteed, enabling predictable recovery behavior in synchronous rectifier and freewheeling applications without requiring external snubbers in most 300–500 kHz designs.
Is SI4038DY-T1-GE3 suitable for avalanche energy handling in inductive switching?
Yes, SI4038DY-T1-GE3 is rated for single-pulse avalanche energy EAS = 80 mJ and avalanche current IAS = 40 A (L = 0.1 mH). These values are production-tested per Vishay's UIS qualification standard, confirming ruggedness in applications like DC/AC inverters or relay drivers where inductive load switching may cause voltage overshoot beyond VDS.
SI4038DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 42.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.4mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 87 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4070 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.5W (Ta), 7.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4038DY-T1-GE3 FAQ
1.How can I place an order for SI4038DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4038DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4038DY-T1-GE3 reliable?
The price and inventory of SI4038DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4038DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4038DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4038DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4038DY-T1-GE3?
SI4038DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4038DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4038DY-T1-GE3?
For technical support, including SI4038DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4038DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4038DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4038DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4038DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4038DY-T1-GE3?
All SI4038DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4038DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4038DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4038DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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