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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4048DY-T1-GE3

Name: SI4048DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4048DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4048DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4048DY-T1-GE3.pdf

Description:: MOSFET N-CH 30V 19.3A 8SO

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Product details

Overview

SI4048DY-T1-GE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® Power MOSFET in SO-8 package, rated for 19.3 A continuous drain current at TC = 25 °C, with R_DS(on) = 0.0085 Ω at V_GS = 10 V and 15 nC total gate charge. It serves as a high-side switch in notebook DC/DC converters.

For engineers reviewing the SI4048DY-T1-GE3 datasheet, SI4048DY-T1-GE3 pinout, SI4048DY-T1-GE3 application, or SI4048DY-T1-GE3 equivalent, key selection criteria include its 30 V V_DS, low R_DS(on) at 4.5 V and 10 V drive, 100 % UIS and R_g tested qualification, and SO-8 thermal performance under high-current switching conditions.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in synchronous buck topologies. Its gate threshold voltage (1–3 V) and low Q_g/Q_gd ratio support efficient 4.5 V logic-level drive and reduce switching losses in high-frequency DC/DC stages.

The device features a robust body diode with t_rr = 23–45 ns and Q_rr = 13–25 nC, enabling reliable freewheeling in high-side configurations. Thermal resistance R_thJA = 39–50 °C/W (1" × 1" FR4) and R_thJF = 18–22 °C/W allow stable operation up to T_J = 150 °C under controlled PCB layout.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in notebook power stages.
R_DS(on) @ V_GS = 10 V	0.0085 Ω - Enables ≤1.3 W conduction loss at 19.3 A, critical for thermally constrained notebook PCBs.
R_DS(on) @ V_GS = 4.5 V	0.0105 Ω - Supports direct drive from 5 V or 4.5 V PWM controllers without level-shifting.
Q_g (V_GS = 4.5 V)	15 nC - Limits gate drive power and enables <35 ns turn-on delay with 1 Ω source impedance.
I_D (continuous, T_C = 25 °C)	19.3 A - Sustains peak load currents in 12–20 A notebook CPU/GPU VRMs.
E_AS	20 mJ - Withstands single-pulse inductive energy during hard-switching events without failure.
t_rr (body diode)	23–45 ns - Reduces reverse recovery loss and EMI in high-side synchronous rectification.

Pinout & Package

SO-8 (MS-012) surface-mount package with exposed drain pad for enhanced thermal dissipation. Dimensions per JEDEC MS-012: D = 4.80–5.00 mm, E = 3.80–4.00 mm, H = 5.80–6.20 mm, lead pitch = 1.27 mm BSC.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0–20 V V_GS; requires low-impedance drive due to 0.15–1.3 Ω R_g.
2 (S)	Source	Power return node; tied to power ground plane; carries full load current and body diode conduction.
3 (D)	Drain	Main power output node; connected to exposed backside pad for thermal path to PCB copper.
4 (S)	Source	Parallel source connection to Pin 2; reduces source inductance in high-di/dt switching.
5 (D)	Drain	Parallel drain connection to Pin 3; shares current with Pin 3 and Pad for lower R_DS(on) effective resistance.
6 (S)	Source	Third source terminal; improves current sharing and minimizes common-source inductance.
7 (D)	Drain	Third drain terminal; enhances thermal coupling to PCB via multiple internal die connections.
8 (G)	Gate	Second gate terminal; provides redundant gate routing and reduces gate loop inductance.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × area efficiency for compact SO-8 footprint and high current density.
100 % R_g tested	Ensures consistent gate resistance (0.15–1.3 Ω), critical for predictable switching timing and EMI control.
100 % UIS tested	Guarantees ruggedness against unclamped inductive switching stress up to 20 mJ without degradation.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated notebook and portable electronics.
Exposed drain thermal pad	Enables junction-to-foot thermal resistance of 18–22 °C/W, supporting >3 W steady-state power dissipation on standard FR4.

Applications

Notebook CPU VRM High-Side Switch	Ultrabook GPU Power Stage
Use Scenario: High-efficiency 1–2 phase synchronous buck converter supplying 0.8–1.3 V @ 15–20 A to Intel/AMD mobile processors. IC Role / Device Role / Timing Role: High-side power switch operating at 300–1000 kHz with 4.5 V gate drive from integrated PWM controller. Use Value: Low 0.0105 Ω R_DS(on) at 4.5 V minimizes conduction loss; 15 nC Q_g enables fast transitions and reduced dead-time loss.	Use Scenario: Compact dual-phase VRM delivering 0.9–1.1 V @ 10–18 A to discrete or integrated GPU in thin-and-light notebooks. IC Role / Device Role / Timing Role: High-side MOSFET in interleaved topology where thermal management and gate drive simplicity are critical. Use Value: Exposed drain pad and 18–22 °C/W R_thJF sustain >2.5 W dissipation without heatsink; SO-8 footprint fits tight layout constraints.
SSD Main Power Switch	Portable SSD Buck Converter
Use Scenario: 3.3 V or 5 V input-to-1.2 V output conversion for NVMe SSD controller and NAND flash arrays. IC Role / Device Role / Timing Role: Primary high-side switch in 500 kHz–1.2 MHz buck regulator powering PCIe interface and memory subsystems. Use Value: 30 V V_DS accommodates input ripple and surge; 20 mJ E_AS prevents failure during hot-plug transients.	Use Scenario: Single-phase 12 V input-to-3.3 V output buck stage in M.2 form-factor portable SSD enclosures. IC Role / Device Role / Timing Role: High-side switching element driven by 5 V microcontroller-based PWM with minimal external components. Use Value: 1–3 V V_GS(th) ensures clean turn-on with 5 V logic; low Q_gd/Q_g ratio suppresses Miller-induced shoot-through risk.

Notebook CPU VRM High-Side Switch

Ultrabook GPU Power Stage

Use Scenario: High-efficiency 1–2 phase synchronous buck converter supplying 0.8–1.3 V @ 15–20 A to Intel/AMD mobile processors.

IC Role / Device Role / Timing Role: High-side power switch operating at 300–1000 kHz with 4.5 V gate drive from integrated PWM controller.

Use Value: Low 0.0105 Ω R_DS(on) at 4.5 V minimizes conduction loss; 15 nC Q_g enables fast transitions and reduced dead-time loss.

Use Scenario: Compact dual-phase VRM delivering 0.9–1.1 V @ 10–18 A to discrete or integrated GPU in thin-and-light notebooks.

IC Role / Device Role / Timing Role: High-side MOSFET in interleaved topology where thermal management and gate drive simplicity are critical.

Use Value: Exposed drain pad and 18–22 °C/W R_thJF sustain >2.5 W dissipation without heatsink; SO-8 footprint fits tight layout constraints.

SSD Main Power Switch

Portable SSD Buck Converter

Use Scenario: 3.3 V or 5 V input-to-1.2 V output conversion for NVMe SSD controller and NAND flash arrays.

IC Role / Device Role / Timing Role: Primary high-side switch in 500 kHz–1.2 MHz buck regulator powering PCIe interface and memory subsystems.

Use Value: 30 V V_DS accommodates input ripple and surge; 20 mJ E_AS prevents failure during hot-plug transients.

Use Scenario: Single-phase 12 V input-to-3.3 V output buck stage in M.2 form-factor portable SSD enclosures.

IC Role / Device Role / Timing Role: High-side switching element driven by 5 V microcontroller-based PWM with minimal external components.

Use Value: 1–3 V V_GS(th) ensures clean turn-on with 5 V logic; low Q_gd/Q_g ratio suppresses Miller-induced shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.0095 Ω @ 10 V; Q_g = 22 nC; SO-8 but no exposed drain pad.	Higher R_thJA (62 °C/W) limits power handling on same PCB; less suitable for >2.5 W sustained loads.	Select when gate drive strength exceeds 15 nC budget and thermal relief is provided externally.
DMN3026LSD-13	R_DS(on) = 0.0075 Ω @ 10 V; Q_g = 18 nC; SO-8 with exposed drain; slightly higher V_GS(th) (1.2–2.4 V).	Better conduction loss but tighter V_GS(th) distribution may require validation with marginal 4.5 V drivers.	Prefer for ultra-low-loss designs where gate drive margin supports 1.2 V minimum threshold.

Compared with IRF7470PBF and DMN3026LSD-13, SI4048DY-T1-GE3 offers balanced trade-offs: lower Q_g than IRF7470PBF for faster switching, better thermal performance than IRF7470PBF due to exposed drain, and more robust 4.5 V drive margin than DMN3026LSD-13 for legacy controller compatibility.

Availability

SI4048DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook CPU VRMs, ultrabook GPU power stages, and portable SSD buck converters requiring stable component supply, Pb-free/halogen-free compliance, and SO-8 thermal reliability.

Supply support for SI4048DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and environmentally compliant devices.

The Si4048DY product line delivers high-current, low-R_DS(on) N-channel MOSFETs for space-constrained DC/DC conversion in portable computing, targeting high-side switching with robust UIS rating and thermal performance in SO-8 packages.

FAQ

What is the maximum continuous drain current for SI4048DY-T1-GE3 at 70 °C case temperature?

The maximum continuous drain current for SI4048DY-T1-GE3 is 15.3 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package under sustained high-power operation and must be validated against actual board layout and airflow conditions. SI4048DY-T1-GE3 maintains R_DS(on) stability across this range due to its trench-gate design.

Does SI4048DY-T1-GE3 support 4.5 V gate drive in high-side synchronous buck applications?

Yes, SI4048DY-T1-GE3 is fully characterized for 4.5 V gate drive, with R_DS(on) = 0.0105 Ω and Q_g = 15 nC at that voltage. Its 1–3 V gate threshold ensures reliable turn-on with standard 5 V logic-level PWM controllers, making SI4048DY-T1-GE3 suitable for high-side use without gate boosting circuitry in notebook VRMs.

What is the body diode reverse recovery time (t_rr) of SI4048DY-T1-GE3, and why does it matter?

The body diode reverse recovery time of SI4048DY-T1-GE3 is 23–45 ns at I_F = 5.0 A, dI/dt = 100 A/µs, and T_J = 25 °C. This low t_rr minimizes reverse recovery loss and associated EMI during high-side freewheeling in synchronous buck converters, directly improving efficiency and thermal behavior in SI4048DY-T1-GE3-based designs.

Is SI4048DY-T1-GE3 qualified for automotive applications?

No, SI4048DY-T1-GE3 is not AEC-Q101 qualified and is intended for commercial-grade applications such as notebook and portable computing. Its datasheet specifies operation from –55 °C to +150 °C, but reliability testing and manufacturing flow are aligned with industrial/commercial standards-not automotive stress requirements. For automotive use, consult Vishay's AEC-Q101-qualified TrenchFET® variants.

How does the exposed drain pad on SI4048DY-T1-GE3 improve thermal performance?

The exposed drain pad on SI4048DY-T1-GE3 provides a low-resistance thermal path from junction to PCB copper, achieving R_thJF = 18–22 °C/W (steady state). This allows SI4048DY-T1-GE3 to dissipate over 3 W continuously on standard FR4 without external heatsinking-critical for thermally dense notebook power stages where airflow is limited and board space is constrained.

SI4048DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 19.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 85mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2060 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 5.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4048DY-T1-GE3 FAQ

1.How can I place an order for SI4048DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4048DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4048DY-T1-GE3 reliable?

The price and inventory of SI4048DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4048DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4048DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4048DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4048DY-T1-GE3?

SI4048DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4048DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4048DY-T1-GE3?

For technical support, including SI4048DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4048DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4048DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4048DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4048DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4048DY-T1-GE3?

All SI4048DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4048DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4048DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4048DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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