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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4058DY-T1-GE3

Name: SI4058DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4058DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4058DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4058DY-T1-GE3.pdf

Description:: MOSFET N-CH 100V 10.3A 8SOIC

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Product details

Overview

SI4058DY-T1-GE3 from Vishay Siliconix is an N-channel 100 V (D-S) power MOSFET in SO-8 package, optimized for primary-side switching in DC/DC converters and synchronous rectification. It delivers R_DS(on) = 0.026 Ω at V_GS = 10 V, 10.3 A continuous drain current at T_C = 25 °C, and 5.8 nC total gate charge - enabling high-efficiency, fast-switching operation in industrial and fast-charger applications.

For engineers reviewing the SI4058DY-T1-GE3 datasheet, SI4058DY-T1-GE3 pinout, SI4058DY-T1-GE3 application, or SI4058DY-T1-GE3 equivalent, key selection criteria include its 100 V V_DS, low R_DS(on) at 4.5 V gate drive, robust UIS rating, ThunderFET® construction, and SO-8 thermal performance with R_thJF = 18 °C/W (steady state).

Technical Context

This MOSFET employs planar silicon technology with fully characterized avalanche capability (E_AS = 11.2 mJ) and 100 % R_g and UIS tested screening. Its gate threshold voltage (V_GS(th) = 1.2–2.8 V) and low Q_gd/Q_g ratio (2.2/12 nC typical) support stable PWM control and reduced switching losses in hard-switched topologies.

The device features a source-drain body diode with t_rr = 56 ns (typ.), Q_rr = 60 nC (typ.), and V_SD = 0.81 V at I_S = 5 A - suitable for synchronous rectification where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports primary-side switching in 48 V input DC/DC and offline auxiliary supplies up to 100 V rail.
R_DS(on)	0.026 Ω max @ V_GS = 10 V - enables <1 W conduction loss at 10 A, critical for thermally constrained SO-8 layouts.
I_D (continuous)	10.3 A @ T_C = 25 °C - defines maximum steady-state current with heatsink; derates to 5.5 A @ T_C = 70 °C.
Q_g	5.8 nC typ. @ V_GS = 4.5 V - allows efficient gate driving from 5 V controllers without external level-shifting.
t_r/t_f	17/8 ns typ. @ V_GEN = 4.5 V - supports >1 MHz switching in compact power stages with low EMI risk.
R_thJF	18 °C/W typ. (steady state) - indicates thermal path efficiency from junction to PCB copper foot, enabling direct thermal coupling to ground plane.
E_AS	11.2 mJ - guarantees single-pulse avalanche ruggedness for inductive turn-off stress in non-clamped topologies.

Pinout & Package

SI4058DY-T1-GE3 is housed in a standard SO-8 (narrow) package per JEDEC MS-012, with exposed drain paddle for enhanced thermal dissipation. The package measures 4.9 mm × 3.9 mm × 1.55 mm (D × E × A), and uses lead (Pb)-free and halogen-free construction.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Common source connection for internal parallel FET cells; electrically tied to exposed drain paddle via PCB ground plane for low-inductance return path.
4	Gate (G)	Control terminal requiring ≤ ±20 V gate drive; low R_g (0.8–4.0 Ω) minimizes gate ringing and enables direct microcontroller drive.
5, 6, 7, 8	Drain (D)	High-side switching node; all four pins connected to internal drain metallization and exposed copper paddle - must be soldered to large PCB copper area for thermal and current handling.

Key Features

Feature	Design Value
ThunderFET® construction	Guarantees 100 % R_g and UIS testing - ensures consistent gate resistance and single-pulse avalanche reliability across production lots.
Low Q_gd/Q_g ratio	0.18 (2.2/12 nC) - reduces Miller plateau duration and improves dv/dt immunity during hard switching.
Body diode t_rr	56 ns typ. - enables use in synchronous rectifier configurations without external Schottky replacement in medium-frequency designs.
V_GS(th) range	1.2–2.8 V - compatible with 3.3 V and 5 V logic-level gate drivers while maintaining noise margin against false turn-on.
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc# 99912 - suitable for green industrial and consumer end equipment.

Applications

DC/DC Primary-Side Switch	Synchronous Rectifier
Use Scenario: High-efficiency isolated flyback or forward converter operating at 100–500 kHz with 24–48 V input. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from primary to secondary winding; requires fast turn-on/off and avalanche ruggedness. Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses; 100 V rating accommodates reflected output voltage plus leakage spikes.	Use Scenario: Secondary-side rectification in 12–24 V output DC/DC converters where Schottky diodes cause excessive loss. IC Role / Device Role / Timing Role: Active rectifier controlled by timing signals from controller IC; replaces passive diode to lower forward drop. Use Value: V_SD = 0.81 V and t_rr = 56 ns enable >2 % efficiency gain over 40 V Schottky at 5 A, with no reverse recovery tail.
Fast Charger Power Stage	Industrial Motor Drive Half-Bridge
Use Scenario: 30–65 W USB PD adapter with active clamp or QR flyback topology requiring compact, thermally efficient primary switch. IC Role / Device Role / Timing Role: High-side switch in QR flyback; handles peak currents up to 15 A with tight thermal constraints on small PCBs. Use Value: R_thJF = 18 °C/W allows direct thermal coupling to inner-layer copper, eliminating need for external heatsink in space-constrained adapters.	Use Scenario: Low-voltage (<60 V) BLDC motor driver half-bridge leg in HVAC blowers or industrial pumps. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; commutates motor phase current with precise dead-time control. Use Value: Tight V_GS(th) distribution (1.2–2.8 V) ensures predictable turn-on timing across temperature; 100 % UIS test prevents failure during inductive kickback events.

DC/DC Primary-Side Switch

Synchronous Rectifier

Use Scenario: High-efficiency isolated flyback or forward converter operating at 100–500 kHz with 24–48 V input.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from primary to secondary winding; requires fast turn-on/off and avalanche ruggedness.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses; 100 V rating accommodates reflected output voltage plus leakage spikes.

Use Scenario: Secondary-side rectification in 12–24 V output DC/DC converters where Schottky diodes cause excessive loss.

IC Role / Device Role / Timing Role: Active rectifier controlled by timing signals from controller IC; replaces passive diode to lower forward drop.

Use Value: V_SD = 0.81 V and t_rr = 56 ns enable >2 % efficiency gain over 40 V Schottky at 5 A, with no reverse recovery tail.

Fast Charger Power Stage

Industrial Motor Drive Half-Bridge

Use Scenario: 30–65 W USB PD adapter with active clamp or QR flyback topology requiring compact, thermally efficient primary switch.

IC Role / Device Role / Timing Role: High-side switch in QR flyback; handles peak currents up to 15 A with tight thermal constraints on small PCBs.

Use Value: R_thJF = 18 °C/W allows direct thermal coupling to inner-layer copper, eliminating need for external heatsink in space-constrained adapters.

Use Scenario: Low-voltage (<60 V) BLDC motor driver half-bridge leg in HVAC blowers or industrial pumps.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; commutates motor phase current with precise dead-time control.

Use Value: Tight V_GS(th) distribution (1.2–2.8 V) ensures predictable turn-on timing across temperature; 100 % UIS test prevents failure during inductive kickback events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540N	R_DS(on) = 0.044 Ω @ 10 V; SO-8 but higher Q_g (71 nC); no 100 % UIS test.	Higher conduction loss and slower switching limit use in >250 kHz designs; unsuitable for unclamped inductive loads.	Choose IRF540N only for cost-sensitive, low-frequency (<100 kHz), non-avalanche-critical applications.
STP10NK100Z	TO-220 package; R_DS(on) = 0.75 Ω @ 10 V; Zener-protected gate; higher V_DS (1000 V).	Not pin-compatible; larger footprint and inferior thermal resistance; intended for high-voltage snubberless applications.	STP10NK100Z serves high-voltage AC line applications - not a functional substitute for SI4058DY-T1-GE3 in DC/DC or fast charger roles.

Compared with IRF540N and STP10NK100Z, SI4058DY-T1-GE3 offers superior R_DS(on), lower Q_g, verified avalanche capability, and SO-8 thermal performance - making it the preferred choice for compact, high-frequency, high-reliability power stages where layout space and thermal management are constrained.

Availability

SI4058DY-T1-GE3 is available at Aetrix Electronics and suitable for fast charger power stages, industrial DC/DC converters, and synchronous rectifier circuits requiring stable component supply, Pb-free compliance, and consistent avalanche-rated performance.

Supply support for SI4058DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The SI4058DY-T1-GE3 belongs to Vishay's ThunderFET® family - engineered for high-current, high-speed switching in space-constrained industrial and consumer power supplies where thermal performance and avalanche immunity are critical.

FAQ

What is the maximum continuous drain current for SI4058DY-T1-GE3 at 70 °C case temperature?

The maximum continuous drain current for SI4058DY-T1-GE3 is 8.3 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be validated against actual board layout and ambient conditions in the final design. SI4058DY-T1-GE3 maintains safe operation within this limit when mounted on a 1" × 1" FR4 board with adequate copper area.

Does SI4058DY-T1-GE3 support 4.5 V gate drive for full enhancement?

Yes, SI4058DY-T1-GE3 is fully enhanced at V_GS = 4.5 V, delivering R_DS(on) = 0.033 Ω (max) and I_D = 9.2 A (typ). Its V_GS(th) range of 1.2–2.8 V ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers. SI4058DY-T1-GE3 does not require gate boosting or level-shifting circuitry in most 5 V control architectures.

What is the thermal resistance from junction to foot (R_thJF) for SI4058DY-T1-GE3?

The typical junction-to-foot thermal resistance (R_thJF) for SI4058DY-T1-GE3 is 18 °C/W under steady-state conditions, with a maximum of 22 °C/W. This parameter quantifies heat transfer efficiency from the silicon die to the exposed drain paddle soldered to the PCB - critical for estimating junction temperature rise when using internal copper planes as heatsinks. SI4058DY-T1-GE3 leverages this low R_thJF to sustain high power density in SO-8 form factor.

Is SI4058DY-T1-GE3 rated for avalanche energy, and what is the value?

Yes, SI4058DY-T1-GE3 is 100 % tested for Unclamped Inductive Switching (UIS) and rated for single-pulse avalanche energy (E_AS) of 11.2 mJ at T_J = 25 °C. This rating applies to inductive turn-off events without external clamping, such as in flyback transformer primary switching. SI4058DY-T1-GE3's guaranteed UIS performance eliminates need for external snubbers in many medium-power topologies.

What is the gate-source leakage current specification for SI4058DY-T1-GE3?

The gate-source leakage current (I_GSS) for SI4058DY-T1-GE3 is ±100 nA maximum at V_GS = ±20 V and T_J = 25 °C, per the Static specifications table. This low leakage ensures minimal gate drive current requirement and stable biasing in high-impedance gate networks. SI4058DY-T1-GE3 maintains this specification across its full operating temperature range (-55 to +150 °C), supporting robust gate control in industrial environments.

SI4058DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 10.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 26mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 690 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 5.6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4058DY-T1-GE3 FAQ

1.How can I place an order for SI4058DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4058DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4058DY-T1-GE3 reliable?

The price and inventory of SI4058DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4058DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4058DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4058DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4058DY-T1-GE3?

SI4058DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4058DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4058DY-T1-GE3?

For technical support, including SI4058DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4058DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4058DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4058DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4058DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4058DY-T1-GE3?

All SI4058DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4058DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4058DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4058DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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