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Vishay Siliconix SI4062DY-T1-GE3
- Part No.:
- SI4062DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4062DY-T1-GE3.pdf
- Description:
- MOSFET N-CH 60V 32.1A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,980
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Product details
Overview
SI4062DY-T1-GE3 from Vishay Siliconix is an N-channel 60 V, 32.1 A TrenchFET® power MOSFET in SO-8 package, with RDS(on) = 4.2 mΩ at VGS = 10 V, Qg = 18.8 nC, and optimized for DC/DC primary-side switching in industrial power supplies.
For engineers reviewing the SI4062DY-T1-GE3 datasheet, SI4062DY-T1-GE3 pinout, SI4062DY-T1-GE3 application, or SI4062DY-T1-GE3 equivalent, key selection criteria include its 60 V VDS, low gate charge for high-frequency PWM operation, robust UIS rating, SO-8 thermal performance (RthJA = 35 °C/W), and body diode recovery (trr = 46 ns).
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching. Its gate threshold voltage (1.4–2.6 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while the 20 V |VGS| rating supports robust gate drive margin.
The device integrates a low-VSD (0.74 V typ. at 5 A) intrinsic body diode with controlled reverse recovery (Qrr = 44 nC), making it suitable for synchronous rectification and hard-switched topologies where diode conduction occurs during dead time.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Supports input rails up to 48 V nominal DC/DC converters with safety margin. |
| RDS(on) max @ 10 V | 4.2 mΩ - Enables <1 W conduction loss at 20 A, critical for high-efficiency primary switches. |
| Qg typ. | 18.8 nC - Reduces gate drive power and enables >500 kHz switching in SMPS designs. |
| ID continuous @ TC = 25 °C | 32.1 A - Sustains full-load current without derating when mounted on heatsinked PCB. |
| trr (body diode) | 46 ns - Minimizes commutation loss and EMI in synchronous buck or LLC resonant converters. |
| RthJA max | 35 °C/W - Defines thermal limit for SO-8 layout on 1" × 1" FR4; requires thermal pad design per AN826. |
| EAS | 31.2 mJ - Withstands single-pulse avalanche energy, enhancing ruggedness in inductive load switching. |
Pinout & Package
SO-8 narrow-body package (JEDEC MS-012), 5.0 mm × 4.0 mm footprint, 1.75 mm height, with exposed drain paddle for enhanced thermal transfer to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Drain (D) | Internally connected to exposed paddle; primary current path and thermal interface to PCB. |
| 5 | Gate (G) | Control terminal; requires low-inductance routing due to 18.8 nC total gate charge. |
| 6 | Source (S) | Reference node for gate drive; ties to power ground plane to minimize switching noise coupling. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 4.2 mΩ RDS(on) in SO-8, enabling higher power density than planar MOSFETs of same size. |
| 100 % Rg and UIS tested | Ensures gate resistance consistency (<3 Ω) and guaranteed avalanche ruggedness (25 A, 31.2 mJ) per unit. |
| Low Qgd/Qg ratio (3.8/18.8) | Reduces Miller effect, improving dv/dt immunity and enabling stable operation in high-side configurations. |
| Body diode trr = 46 ns | Enables reliable synchronous rectification without external Schottky, reducing BOM count and cost. |
| Pb-free and halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's material categorization standard (doc#99912). |
Applications
| DC/DC Primary-Side Switch | Synchronous Rectifier |
|---|---|
Use Scenario: High-efficiency isolated flyback or forward converter operating at 100–300 kHz with 24–48 V input. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from primary to secondary; duty cycle modulated by PWM controller. Use Value: 4.2 mΩ RDS(on) and 18.8 nC Qg reduce both conduction and switching losses, achieving >92 % efficiency at full load. | Use Scenario: Secondary-side rectification in 12 V output LLC resonant converter for telecom power systems. IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diode; driven synchronously with transformer voltage polarity. Use Value: Body diode trr = 46 ns and VSD = 0.74 V minimize reverse recovery loss and forward drop, increasing output efficiency by 1.2 % over 40 V Schottky. |
| Industrial Load Switch | DC/AC Inverter Stage |
Use Scenario: Hot-swap and inrush control for 24 V PLC I/O modules with 10 A peak load. IC Role / Device Role / Timing Role: High-side power switch with integrated current limiting and thermal shutdown via external sense resistor. Use Value: 60 V rating accommodates 24 V bus transients; 32.1 A rating supports 2× inrush current without derating. | Use Scenario: Half-bridge leg in 400 W solar microinverter converting 48 V battery to 120 V AC. IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology; commutates at 20 kHz with zero-voltage switching assistance. Use Value: Avalanche-rated (EAS = 31.2 mJ) withstands inductive kickback during ZVS transitions, improving system reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 4.5 mΩ @ 10 V; Qg = 22 nC; SO-8 package; no UIS test data published. | Higher gate charge increases driver loss; lacks documented avalanche rating for inductive switching. | Acceptable where lower switching frequency (<200 kHz) and non-avalanche-critical loads apply. |
| DMN6070LFG-7 | RDS(on) = 4.8 mΩ @ 10 V; Qg = 15.5 nC; lead-free SO-8; specified for automotive AEC-Q101. | Lower Qg improves high-frequency efficiency but higher RDS(on) raises conduction loss at >15 A. | Preferred for automotive-grade designs requiring qualification; less optimal for high-current industrial SMPS. |
Compared with IRF7470PBF and DMN6070LFG-7, SI4062DY-T1-GE3 offers the lowest RDS(on) and verified UIS performance-critical for rugged industrial DC/DC primary switches-while maintaining competitive Qg and SO-8 thermal capability.
Availability
SI4062DY-T1-GE3 is available at Aetrix Electronics and suitable for industrial power supplies, DC/DC converters, and motor control systems requiring stable component supply, long-term manufacturability, and RoHS-compliant sourcing.
Supply support for SI4062DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.
The SI4062DY-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered for high-current, high-frequency switching in industrial and computing power conversion.
FAQ
What is the maximum continuous drain current for SI4062DY-T1-GE3 at 70 °C case temperature?
The SI4062DY-T1-GE3 supports 25.7 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be validated against actual PCB layout and heatsinking in the target application.
Does SI4062DY-T1-GE3 have a qualified avalanche rating?
Yes, SI4062DY-T1-GE3 is 100 % UIS (unclamped inductive switching) tested with a single-pulse avalanche current of 25 A and energy rating of 31.2 mJ. This ensures reliable operation under inductive turn-off stress without external snubbers in properly designed circuits.
What is the typical gate-source threshold voltage range for SI4062DY-T1-GE3?
The SI4062DY-T1-GE3 has a gate-source threshold voltage (VGS(th)) range of 1.4 V to 2.6 V at ID = 250 μA and TJ = 25 °C. This logic-level compatible range allows direct drive from 3.3 V or 5 V microcontrollers without level-shifting circuitry.
How does the body diode performance of SI4062DY-T1-GE3 compare to external Schottky diodes in synchronous rectification?
The SI4062DY-T1-GE3 body diode exhibits VSD = 0.74 V at 5 A and trr = 46 ns, offering lower forward voltage than many 40 V Schottky diodes (typically 0.55–0.75 V) while providing integrated functionality. Its controlled recovery reduces ringing and EMI compared to fast-recovery diodes, simplifying layout in synchronous rectifier designs.
Is SI4062DY-T1-GE3 suitable for high-frequency switching above 1 MHz?
While SI4062DY-T1-GE3 has Qg = 18.8 nC and fast switching times (td(on) = 16 ns at 10 V drive), its Ciss = 3175 pF and RDS(on) optimization favor 100–500 kHz operation. Above 1 MHz, gate drive losses and capacitive reactance increase significantly; for >1 MHz, consider devices with lower Ciss and Qg such as GaN FETs.
SI4062DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 32.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3175 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 7.8W (Tc)
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4062DY-T1-GE3 FAQ
1.How can I place an order for SI4062DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4062DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4062DY-T1-GE3 reliable?
The price and inventory of SI4062DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4062DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4062DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4062DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4062DY-T1-GE3?
SI4062DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4062DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4062DY-T1-GE3?
For technical support, including SI4062DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4062DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4062DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4062DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4062DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4062DY-T1-GE3?
All SI4062DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4062DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4062DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4062DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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