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Vishay Siliconix SI4090BDY-T1-GE3
- Part No.:
- SI4090BDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4090BDY-T1-GE3.pdf
- Description:
- N-CHANNEL 100-V (D-S) MOSFET SO-
- Quantity:
- Payment:
- Shipping:
Inventory:7,063
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Product details
Overview
SI4090BDY-T1-GE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® power MOSFET in SO-8 package, rated for 18.7 A continuous drain current at TC = 25 °C, with RDS(on) of 0.0100 Ω at VGS = 10 V and total gate charge of 28 nC (typical). It serves as a primary-side switch in DC/DC converters and synchronous rectifier in telecom/server power supplies.
For engineers reviewing the SI4090BDY-T1-GE3 datasheet, SI4090BDY-T1-GE3 pinout, SI4090BDY-T1-GE3 application, or SI4090BDY-T1-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance data (RthJA = 33 °C/W typ), SO-8 terminal mapping, and real-world use cases in motor drive control and high-efficiency power conversion.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching performance. Its 100 % Rg and UIS tested construction ensures robustness against gate resistance variation and unclamped inductive switching stress.
Designed for surface-mount operation on FR4 boards, it supports pulsed drain currents up to 80 A (t = 300 μs) and avalanche energy of 61.25 mJ, enabling reliable operation in hard-switched topologies where voltage transients occur.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (max) | 100 V - Withstands up to 100 V drain-source blocking voltage before breakdown. |
| RDS(on) @ VGS = 10 V | 0.0100 Ω - Enables <1 W conduction loss at 10 A, critical for high-efficiency primary-side switching. |
| ID (cont.) @ TC = 25 °C | 18.7 A - Supports high-current DC/DC stages without forced cooling under case temperature control. |
| Qg (typ.) | 28 nC - Low gate charge reduces driver power requirement and enables efficient 500 kHz+ switching. |
| RthJA (typ.) | 33 °C/W - Thermal resistance from junction to ambient on 1" × 1" FR4 board defines heatsinking needs for 3.1 W max dissipation at TA = 25 °C. |
| VGS(th) | 2–4 V - Gate threshold compatible with standard 3.3 V and 5 V logic-level drivers without level-shifting. |
| Ciss | 3570 pF - Input capacitance impacts gate drive loop stability and EMI filter design in high-frequency SMPS. |
Pinout & Package
SO-8 (narrow-body, MS-012 compliant) surface-mount package with exposed drain pad for enhanced thermal performance. Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (L × W × H), lead pitch 1.27 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection; pins 1–4 are internally bonded and electrically tied for low-inductance return path. |
| 5, 6, 7, 8 | Drain (D) | Power output node; pins 5–8 connect to internal drain metallization and exposed pad for thermal conduction. |
| 4 | Gate (G) | Control input; pin 4 is dedicated gate terminal-separate from source pins despite shared numbering in top-view diagram. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® construction | Delivers optimized cell density and reduced RDS(on) × Qg figure-of-merit for high-frequency efficiency. |
| 100 % Rg and UIS tested | Ensures gate resistance consistency and validated ruggedness against inductive turn-off energy spikes. |
| Exposed drain pad | Enables direct thermal coupling to PCB copper pour, reducing RthJF to 15 °C/W (steady state). |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709C material requirements. |
| Body diode trr = 44 ns (typ.) | Supports synchronous rectification with low reverse recovery loss in buck and LLC topologies. |
Applications
| DC/DC Primary-Side Switch | Telecom / Server PSU |
|---|---|
Use Scenario: High-efficiency isolated flyback or forward converter operating at 200–500 kHz in 48 V intermediate bus systems. IC Role / Device Role / Timing Role: Main switching element controlling energy transfer from primary to secondary side; operates in hard-switched mode with 100 V VDS rating matching bus overvoltage margin. Use Value: 0.0100 Ω RDS(on) minimizes conduction loss at 12–15 A load current, improving full-load efficiency by ≥0.8 % versus higher-RDS(on) alternatives. | Use Scenario: Secondary-side synchronous rectification in 12 V or 5 V output rails of multi-output server PSUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes; driven by controller's complementary gate signal with tight timing alignment. Use Value: 44 ns body diode trr and 0.75 V VSD reduce reverse recovery loss and forward drop, cutting rectifier losses by >30 % at 10 A. |
| Motor Drive Control | Synchronous Rectification |
Use Scenario: Half-bridge high-side or low-side switch in 24–48 V BLDC motor gate drivers for industrial automation. IC Role / Device Role / Timing Role: Power stage switch handling PWM-modulated phase current; requires fast turn-on/turn-off (td(on) = 18 ns typ., tf = 8 ns typ. at VGEN = 7.5 V). Use Value: 28 nC Qg allows clean switching with standard 1 A peak gate drivers, avoiding shoot-through risk during dead-time transitions. | Use Scenario: High-current synchronous rectifier in isolated DC/DC modules for FPGA or ASIC power delivery (e.g., 3.3 V @ 20 A). IC Role / Device Role / Timing Role: Unidirectional power switch conducting during low-side conduction interval; leverages low RDS(on) and integrated body diode for freewheeling. Use Value: 7 A continuous source-drain diode current rating and 0.0106 Ω RDS(on) at VGS = 7.5 V enable stable operation with 3.3 V gate drive from controller ICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.0095 Ω @ 10 V, but SO-8 package lacks exposed drain pad; RthJA = 62 °C/W (higher thermal resistance). | Less effective in thermally constrained layouts; requires larger copper area or heatsink for same power dissipation. | Select when lower RDS(on) is prioritized over thermal performance and board space is unconstrained. |
| DMN6070LSD-13 | RDS(on) = 0.007 Ω @ 10 V, but VDS = 60 V only; not rated for 100 V bus applications. | Unsuitable for primary-side switching in 48 V telecom systems with 100 V transients. | Prefer only in secondary-side or low-voltage motor drive roles where 60 V rating suffices. |
Compared with IRF7470PBF and DMN6070LSD-13, SI4090BDY-T1-GE3 uniquely balances 100 V rating, 0.0100 Ω on-resistance, SO-8 thermal performance (RthJF = 15 °C/W), and 100 % UIS testing-making it optimal for compact, high-reliability primary-side and synchronous rectifier designs.
Availability
SI4090BDY-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC primary-side switching, telecom/server power supply design, and motor drive control requiring stable component supply across production volumes.
Supply support for SI4090BDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI4090BDY-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered for high-frequency, high-efficiency power conversion in telecom, computing, and industrial systems where low RDS(on) × Qg and rugged UIS performance are critical.
FAQ
What is the maximum continuous drain current rating for SI4090BDY-T1-GE3 at TC = 70 °C?
The SI4090BDY-T1-GE3 supports 15 A continuous drain current at case temperature (TC) of 70 °C, as specified in its Absolute Maximum Ratings table. This derating from 18.7 A at TC = 25 °C reflects thermal limits of the SO-8 package under practical heatsinking conditions. Designers must verify PCB copper area and airflow to maintain TC ≤ 70 °C for sustained 15 A operation.
Does SI4090BDY-T1-GE3 have a built-in body diode, and what are its key characteristics?
Yes, SI4090BDY-T1-GE3 integrates a parasitic body diode with VSD = 0.75 V (typ.) at IS = 5 A and reverse recovery time trr = 44 ns (typ.) at TJ = 25 °C. These values are confirmed in the "Drain-source Body Diode Characteristics" section of the datasheet. The diode supports synchronous rectification and freewheeling functions without external components.
What is the gate threshold voltage range for SI4090BDY-T1-GE3, and how does it affect drive compatibility?
The gate threshold voltage (VGS(th)) for SI4090BDY-T1-GE3 is specified as 2–4 V at ID = 250 μA. This range ensures compatibility with standard 3.3 V and 5 V logic-level gate drivers without requiring level shifters. At VGS = 4.5 V, the device achieves usable RDS(on) (~0.013 Ω), making it suitable for controllers with limited gate drive voltage headroom.
How is thermal performance characterized for SI4090BDY-T1-GE3 on a standard PCB?
SI4090BDY-T1-GE3 has a typical junction-to-ambient thermal resistance (RthJA) of 33 °C/W when mounted on a 1" × 1" FR4 board, per datasheet note b. Its junction-to-foot (drain) resistance is 15 °C/W (steady state), enabling efficient heat transfer to PCB copper pours. These values are measured under defined test conditions and guide heatsink and layout design for target junction temperatures.
Is SI4090BDY-T1-GE3 suitable for avalanche-rated applications, and what is its rated energy?
Yes, SI4090BDY-T1-GE3 is 100 % UIS (unclamped inductive switching) tested and rated for single-pulse avalanche energy EAS = 61.25 mJ with L = 0.1 mH. This specification confirms its ability to safely absorb inductive energy during switching transients-critical for reliability in hard-switched DC/DC and motor drive circuits where voltage spikes exceed VDS rating.
SI4090BDY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 12.2A (Ta), 18.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 12.2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3570 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 7.4W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4090BDY-T1-GE3 FAQ
1.How can I place an order for SI4090BDY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4090BDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4090BDY-T1-GE3 reliable?
The price and inventory of SI4090BDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4090BDY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4090BDY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4090BDY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4090BDY-T1-GE3?
SI4090BDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4090BDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4090BDY-T1-GE3?
For technical support, including SI4090BDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4090BDY-T1-GE3 requirements.
6.How does Aetrix verify that SI4090BDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4090BDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4090BDY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4090BDY-T1-GE3?
All SI4090BDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4090BDY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4090BDY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4090BDY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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