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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4100DY-T1-GE3

Name: SI4100DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4100DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4100DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4100DY-T1-GE3.pdf

Description:: MOSFET N-CH 100V 6.8A 8SO

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Product details

Overview

SI4100DY-T1-GE3 from Vishay Siliconix is an N-channel 100-V TrenchFET® Power MOSFET in SO-8 package, with R_DS(on) = 0.063 Ω at V_GS = 10 V, 6.8 A continuous drain current, and 9 nC total gate charge - optimized for high-frequency boost converters and LED backlight drivers in LCD TVs.

For engineers reviewing the SI4100DY-T1-GE3 datasheet, SI4100DY-T1-GE3 pinout, SI4100DY-T1-GE3 application, or SI4100DY-T1-GE3 equivalent, key selection criteria include its 100 V V_DS, halogen-free/lead-free compliance, UIS-tested ruggedness, and SO-8 thermal performance under switching stress.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(on) and fast switching with Q_g = 9 nC (V_GS = 6 V) and t_f = 10–15 ns. Its body diode exhibits t_rr = 45–70 ns and Q_rr = 80–120 nC, supporting synchronous rectification and hard-switched topologies.

Rated for 100 V V_DS and ±20 V V_GS, it operates across –55 °C to +150 °C junction range, with R_thJA = 37–50 °C/W (1" × 1" FR4) and R_thJF = 17–21 °C/W - enabling thermally constrained PCB layouts without external heatsinking in medium-power applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input rails up to 85 V DC in boost converters before derating.
R_DS(on)	0.063 Ω @ V_GS = 10 V - limits conduction loss to ≤280 mW at 6.8 A, critical for efficiency in LED backlight drivers.
I_D (continuous)	6.8 A @ T_C = 25 °C - defines maximum steady-state current with case-mounted thermal path.
Q_g	9 nC @ V_GS = 6 V - enables efficient gate drive with low-current controllers in high-frequency (>300 kHz) operation.
t_rr / Q_rr	45–70 ns / 80–120 nC - determines reverse recovery loss and EMI in discontinuous conduction mode (DCM) boost stages.
R_thJA	37 °C/W (typ.) - sets thermal rise of ~140 °C at 3.8 W dissipation on standard FR4, guiding layout copper area requirements.
V_GS(th)	2–4.5 V - ensures reliable turn-on with 5 V logic-level gate drivers while avoiding spurious activation near ground.

Pinout & Package

SO-8 (MS-012) surface-mount package with exposed drain paddle for enhanced thermal conduction; JEDEC-compliant footprint per Application Note 826.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Drain (D)	Pins 1–4 and 6–8 are internally connected to drain; pin 5 is isolated gate - provides low-inductance, high-current drain path with thermal pad attachment.
5	Gate (G)	Single gate terminal; requires <10 Ω series resistance to damp ringing due to low C_iss = 600 pF and fast dV/dt capability.
Source	Source (S)	Not a dedicated pin - source connection made via PCB trace to pins 1–4/6–8 drain terminals through internal die bonding; external source routing required.

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 0.063 Ω R_DS(on) at 100 V rating - delivers higher power density than planar MOSFETs in same package.
100 % UIS tested	Guarantees avalanche energy handling (E_AS = 18 mJ) without derating - eliminates need for external snubbers in inductive switching circuits.
Halogen-free & Pb-free	Complies with IEC 61249-2-21 and RoHS - supports environmental compliance for consumer electronics and display systems.
Low Q_gd/Q_g ratio	Q_gd = 4.6 nC of Q_g = 9–13.5 nC - improves Miller immunity and reduces switching loss during hard commutation.

Applications

High-Frequency Boost Converter	LED Backlight for LCD TV
Use Scenario: Step-up DC-DC converter operating at 300–500 kHz to generate 40–120 V from 12–24 V supply for edge-lit LED strings. IC Role / Device Role / Timing Role: Primary switch controlling inductor current; duty cycle modulated by PWM controller to regulate output voltage. Use Value: Low R_DS(on) and fast switching minimize conduction + switching losses, sustaining >92 % efficiency at full load.	Use Scenario: Constant-current driver powering parallel white LED arrays behind LCD panels in 32–65 inch TVs. IC Role / Device Role / Timing Role: High-side switch in boost stage feeding LED string; synchronized with dimming PWM to enable local dimming zones. Use Value: 100 % UIS rating prevents failure during LED open-circuit transients; SO-8 thermal pad aids heat spreading across metal chassis.
Industrial DC-DC Module	USB-C PD Power Delivery Adapter
Use Scenario: Compact 24 V input, 48 V output isolated DC-DC module for factory automation sensors and actuators. IC Role / Device Role / Timing Role: Main switch in primary-side active clamp forward or LLC resonant topology auxiliary stage. Use Value: Robust V_GS = ±20 V rating tolerates gate drive overshoot in noisy industrial environments; t_r/t_f < 20 ns supports tight dead-time control.	Use Scenario: Secondary-side synchronous rectifier or primary-side switch in 65 W USB-C PD adapter with variable output (5–20 V). IC Role / Device Role / Timing Role: High-efficiency switch in flyback or half-bridge PFC front-end; driven by dedicated gate driver IC. Use Value: Low Q_g enables direct drive from microcontroller GPIO in cost-sensitive designs; halogen-free compliance meets UL/IEC safety standards.

High-Frequency Boost Converter

LED Backlight for LCD TV

Use Scenario: Step-up DC-DC converter operating at 300–500 kHz to generate 40–120 V from 12–24 V supply for edge-lit LED strings.

IC Role / Device Role / Timing Role: Primary switch controlling inductor current; duty cycle modulated by PWM controller to regulate output voltage.

Use Value: Low R_DS(on) and fast switching minimize conduction + switching losses, sustaining >92 % efficiency at full load.

Use Scenario: Constant-current driver powering parallel white LED arrays behind LCD panels in 32–65 inch TVs.

IC Role / Device Role / Timing Role: High-side switch in boost stage feeding LED string; synchronized with dimming PWM to enable local dimming zones.

Use Value: 100 % UIS rating prevents failure during LED open-circuit transients; SO-8 thermal pad aids heat spreading across metal chassis.

Industrial DC-DC Module

USB-C PD Power Delivery Adapter

Use Scenario: Compact 24 V input, 48 V output isolated DC-DC module for factory automation sensors and actuators.

IC Role / Device Role / Timing Role: Main switch in primary-side active clamp forward or LLC resonant topology auxiliary stage.

Use Value: Robust V_GS = ±20 V rating tolerates gate drive overshoot in noisy industrial environments; t_r/t_f < 20 ns supports tight dead-time control.

Use Scenario: Secondary-side synchronous rectifier or primary-side switch in 65 W USB-C PD adapter with variable output (5–20 V).

IC Role / Device Role / Timing Role: High-efficiency switch in flyback or half-bridge PFC front-end; driven by dedicated gate driver IC.

Use Value: Low Q_g enables direct drive from microcontroller GPIO in cost-sensitive designs; halogen-free compliance meets UL/IEC safety standards.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100-V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK100ZFP	TO-220FP package; R_DS(on) = 0.75 Ω (higher); 100 % avalanche rated but not UIS tested.	Requires heatsink; unsuitable for space-constrained SMT designs like LCD backlight modules.	Prefer SI4100DY-T1-GE3 when board space, thermal pad integration, or high-frequency operation are critical.
IRF540N	TO-220 package; R_DS(on) = 0.044 Ω but only rated for 100 V V_DS with 55 A pulse - no UIS test data or halogen-free certification.	Lacks automotive/consumer-grade compliance documentation; higher C_iss (1,700 pF) increases gate drive loss.	Choose SI4100DY-T1-GE3 for certified reliability, SMT compatibility, and documented switching performance in LED TV designs.

Compared with STP10NK100ZFP and IRF540N, SI4100DY-T1-GE3 offers superior SMT thermal management, lower gate charge for high-frequency use, and verified halogen-free compliance - making it the preferred choice for compact, high-reliability boost converters in consumer displays.

Availability

SI4100DY-T1-GE3 is available at Aetrix Electronics and suitable for high-frequency boost converters, LED backlight drivers, industrial DC-DC modules, and USB-C PD adapters requiring stable component supply and long-term manufacturability.

Supply support for SI4100DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, computing, and consumer markets.

The Si4100DY product line targets high-efficiency, high-frequency DC-DC conversion in space-constrained applications - emphasizing ruggedness (UIS), thermal performance (SO-8 drain pad), and environmental compliance (halogen-free/Pb-free).

FAQ

What is the maximum continuous drain current for SI4100DY-T1-GE3 at 70 °C case temperature?

The SI4100DY-T1-GE3 supports 5.4 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capacity at elevated case temperatures and must be validated against actual PCB copper area and airflow conditions in the final design.

Does SI4100DY-T1-GE3 have a built-in body diode, and what are its key parameters?

Yes, SI4100DY-T1-GE3 integrates a source-drain body diode with V_SD = 0.8–1.2 V at I_S = 3.5 A, t_rr = 45–70 ns, and Q_rr = 80–120 nC. These values are measured at T_J = 25 °C with dI/dt = 100 A/µs, and are critical for evaluating reverse recovery loss in boost and flyback topologies using this MOSFET.

Is SI4100DY-T1-GE3 suitable for gate driving with a 5 V microcontroller output?

Yes, SI4100DY-T1-GE3 has a gate threshold voltage V_GS(th) of 2–4.5 V and achieves R_DS(on) = 0.084 Ω at V_GS = 6 V, making it compatible with standard 5 V logic-level gate drivers. However, full enhancement (R_DS(on) = 0.063 Ω) requires 10 V drive, so system efficiency should be evaluated at both 5 V and 10 V gate bias.

What is the thermal resistance from junction to ambient (R_thJA) for SI4100DY-T1-GE3 on a standard PCB?

The SI4100DY-T1-GE3 has a typical R_thJA of 37 °C/W and maximum of 50 °C/W when mounted on a 1" × 1" FR4 board, per the Thermal Resistance Ratings table. This value assumes no additional heatsinking and is used to calculate junction temperature rise under steady-state power dissipation.

How does the UIS testing benefit the reliability of SI4100DY-T1-GE3 in real-world applications?

The 100 % UIS (Unclamped Inductive Switching) testing certifies that every SI4100DY-T1-GE3 unit withstands single-pulse avalanche energy of 18 mJ at L = 0.1 mH. This ensures robustness against inductive kickback in boost converters and motor drives without requiring external clamping circuits, directly improving field reliability in LED backlight and industrial power supplies.

SI4100DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 6.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 63mOhm @ 4.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 600 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4100DY-T1-GE3 FAQ

1.How can I place an order for SI4100DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4100DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4100DY-T1-GE3 reliable?

The price and inventory of SI4100DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4100DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4100DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4100DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4100DY-T1-GE3?

SI4100DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4100DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4100DY-T1-GE3?

For technical support, including SI4100DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4100DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4100DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4100DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4100DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4100DY-T1-GE3?

All SI4100DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4100DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4100DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4100DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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