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Vishay Siliconix SI4102DY-T1-E3
- Part No.:
- SI4102DY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4102DY-T1-E3.pdf
- Description:
- MOSFET N-CH 100V 3.8A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:5,203
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Product details
Overview
SI4102DY-T1-E3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® Power MOSFET in SO-8 package, with RDS(on) = 0.158 Ω at VGS = 10 V, continuous drain current of 3.8 A at TC = 25 °C, and total gate charge of 4.6 nC (VGS = 6 V). It is designed for high-frequency boost converters and LED backlight drivers in LCD TVs.
For engineers reviewing the SI4102DY-T1-E3 datasheet, SI4102DY-T1-E3 pinout, SI4102DY-T1-E3 application, or SI4102DY-T1-E3 equivalent, key selection criteria include its 100 V VDS, low Qg for fast switching, 100% UIS-tested ruggedness, SO-8 thermal performance (RthJA = 42 °C/W typ.), and body diode recovery (trr = 50–80 ns).
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate threshold voltage (VGS(th) = 2–4 V) supports standard 5 V and 10 V logic-level drive, while the 0.175 Ω RDS(on) at VGS = 6 V enables efficient operation in 5 V control systems.
The device features a fully rated body diode with trr = 50–80 ns and Qrr = 75–120 nC, making it suitable for synchronous rectification and discontinuous conduction mode (DCM) boost topologies. Thermal design is supported by RthJF = 21 °C/W (steady-state) to the drain foot, enabling direct PCB copper heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Withstands up to 100 V drain-source blocking voltage, suitable for 48 V input boost stages and LED string supplies. |
| RDS(on) | 0.158 Ω @ VGS = 10 V - Delivers <1.1 W conduction loss at 3.3 A DC, enabling compact thermal design in space-constrained LED drivers. |
| Qg | 4.6 nC @ VGS = 6 V - Enables fast turn-on with low gate drive power, critical for >500 kHz boost converter operation. |
| ID (continuous) | 3.8 A @ TC = 25 °C - Supports sustained output currents up to ~3 A in thermally optimized SO-8 layouts with 1" × 1" FR4 copper area. |
| trr / Qrr | 50–80 ns / 75–120 nC - Reduces switching losses and voltage overshoot during body diode commutation in DCM boost and flyback circuits. |
| RthJA | 42 °C/W (typ.) - Allows ~2.4 W power dissipation at ambient 25 °C without heatsink, verified on standard 1" × 1" FR4 board. |
Pinout & Package
SO-8 (narrow-body, JEDEC MS-012), surface-mount package with exposed drain pad (Pin 1–4 and 6–8 connected to drain); 5 mm × 4 mm footprint; 1.75 mm max height; lead (Pb)-free and halogen-free per ordering suffix -E3.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7, 8 | Drain (D) | All tied internally to power-handling drain region; pins 1–4 and 6–8 are electrically common and thermally coupled to the exposed drain paddle for low RthJF. |
| 5 | Gate (G) | Control terminal; requires ≤±20 V gate-source voltage; low 3 Ω gate resistance minimizes ringing in high-dV/dt environments. |
| Source (S) | Source (S) | Internally connected to pins 5 (gate) and 8 (drain)? No - source is pin 5? Wait: correction - per top-view diagram in datasheet page 2: Pin 1 = D, Pin 2 = D, Pin 3 = D, Pin 4 = D, Pin 5 = G, Pin 6 = S, Pin 7 = S, Pin 8 = S. Confirmed: Pins 6–8 = Source terminals; Pin 5 = Gate; Pins 1–4 = Drain. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 0.158 Ω RDS(on) at 100 V rating - achieves higher power density than planar MOSFETs in same SO-8 footprint. |
| 100 % UIS tested | Guarantees ruggedness against unclamped inductive switching events up to IAS = 6 A and EAS = 1.8 mJ - eliminates need for external snubbers in boost inductor flyback. |
| Low Qgd/Qg ratio | Qgd = 2 nC / Qg = 4.6 nC → ~43 % - improves Miller immunity and enables stable operation with high-side gate drivers in hard-switched topologies. |
| Optimized body diode | trr = 50–80 ns with soft recovery - reduces EMI and voltage spikes when used as freewheeling diode in non-synchronous boost converters. |
Applications
| High-Frequency Boost Converter | LED Backlight for LCD TV |
|---|---|
|
Use Scenario: Step-up DC/DC converter operating at 300–1000 kHz to generate 100–200 V for white LED strings in edge-lit LCD panels. IC Role / Device Role / Timing Role: Primary switching element in boost power stage; handles pulsed drain current up to 8 A (IDM) and repetitive 100 V blocking. Use Value: Low Qg (4.6 nC) and fast tr/tf (10–15 ns) minimize switching losses at high frequency; SO-8 drain paddle aids thermal management under continuous 2–3 A load. |
Use Scenario: Constant-current LED driver with analog/digital dimming, powering 10–20 series-connected LEDs from 12–24 V input. IC Role / Device Role / Timing Role: High-side switch controlling energy transfer into boost inductor; operates in discontinuous conduction mode (DCM) with body diode freewheeling. Use Value: Body diode trr = 50–80 ns and low Qrr reduce reverse-recovery losses and audible noise; 100 % UIS rating ensures reliability during LED open-circuit fault conditions. |
| Industrial DC-DC Module | USB-PD Power Delivery Adapter |
|
Use Scenario: Compact 24 V to 48 V isolated or non-isolated boost module for factory automation sensors and fieldbus nodes. IC Role / Device Role / Timing Role: Main power switch in regulated boost topology; required to sustain 3.8 A continuous current at 85 °C ambient with minimal derating. Use Value: RthJA = 42 °C/W (typ.) and RthJF = 21 °C/W allow direct copper pour heatsinking on 2-layer PCB; 150 °C max TJ supports extended industrial temperature range. |
Use Scenario: Secondary-side synchronous rectifier or primary-side switch in 30–65 W USB-PD AC/DC adapters with active clamp or QR flyback. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET used in high-side configuration with bootstrap gate drive; must tolerate 100 V transient stress during startup and fault. Use Value: VDS = 100 V rating exceeds typical reflected voltage + margin in 65 W designs; low Ciss = 370 pF and Coss = 40 pF ease gate driver selection and improve light-load efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP10NK100ZFP | TO-220FP package; RDS(on) = 0.85 Ω (higher); Qg = 45 nC (much higher); 100 V VDS; Zener-protected gate. | Requires heatsink; unsuitable for >200 kHz due to high Qg; better for lower-frequency, higher-current linear-regulated supplies. | Choose only if board space allows TO-220 footprint and thermal mass, and switching frequency is below 150 kHz. |
| IRF540N | TO-220 package; RDS(on) = 0.044 Ω @ 10 V but only rated to 100 V with 55 A ID; Qg = 71 nC; no UIS rating specified. | Higher conduction efficiency but significantly slower switching; not validated for repetitive UIS stress; larger thermal footprint. | Select only for low-frequency (<100 kHz), high-current linear or quasi-resonant applications where ruggedness is secondary to RDS(on). |
Compared with STP10NK100ZFP and IRF540N, the SI4102DY-T1-E3 delivers superior high-frequency efficiency via ultra-low Qg and SO-8 thermal integration, while its 100 % UIS testing provides proven reliability in inductive switching - a critical advantage absent in both alternatives.
Availability
SI4102DY-T1-E3 is available at Aetrix Electronics and suitable for high-frequency boost converters, LED backlight drivers, and industrial DC-DC modules requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for SI4102DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency, ruggedness, and reliability.
The Si4102DY belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-frequency, high-efficiency DC-DC conversion in space- and thermally-constrained applications such as LED lighting and consumer power adapters.
FAQ
What is the maximum continuous drain current for SI4102DY-T1-E3 at 70 °C case temperature?
The SI4102DY-T1-E3 supports a continuous drain current of 3.0 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from 3.8 A at 25 °C, maintaining safe junction temperature within the 150 °C limit under typical PCB copper heatsinking conditions. The SI4102DY-T1-E3 datasheet confirms this value under steady-state conditions with proper layout.
Does SI4102DY-T1-E3 have a specified body diode reverse recovery time?
Yes, the SI4102DY-T1-E3 specifies a body diode reverse recovery time (trr) of 50–80 ns under test conditions of IF = 2.1 A, dI/dt = 100 A/µs, and TJ = 25 °C. This parameter is critical for minimizing switching losses in non-synchronous boost and flyback converters. The SI4102DY-T1-E3 also provides Qrr = 75–120 nC and soft recovery characteristics.
Is SI4102DY-T1-E3 suitable for gate driving with a 5 V microcontroller output?
Yes, the SI4102DY-T1-E3 has a gate threshold voltage (VGS(th)) of 2–4 V and delivers RDS(on) = 0.175 Ω at VGS = 6 V, making it compatible with 5 V logic-level drive. Its low Qg (4.6 nC at 6 V) ensures fast turn-on without excessive gate driver current demand. The SI4102DY-T1-E3 is explicitly characterized for 6 V operation in its product summary.
What is the thermal resistance from junction to ambient for SI4102DY-T1-E3 on a standard PCB?
The SI4102DY-T1-E3 has a typical junction-to-ambient thermal resistance (RthJA) of 42 °C/W when mounted on a 1" × 1" FR4 board with standard copper coverage, as stated in the Thermal Resistance Ratings table. The maximum RthJA is 53 °C/W under the same conditions. This value enables ~2.4 W power dissipation at 25 °C ambient before reaching TJ = 150 °C. The SI4102DY-T1-E3 datasheet defines this per note "a".
How is the SO-8 package of SI4102DY-T1-E3 configured for thermal management?
The SI4102DY-T1-E3 uses an SO-8 package with pins 1–4 and 6–8 internally connected to the drain, forming a large exposed drain paddle that serves as the primary thermal path. Its junction-to-foot (drain) resistance is 21 °C/W (typical), allowing direct thermal coupling to PCB copper pours. Unlike standard SO-8, this variant leverages multiple drain pins and the paddle for enhanced heat extraction - a key feature confirmed in the Vishay package drawing 71192 and SI4102DY-T1-E3 datasheet.
SI4102DY-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 158mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 370 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.4W (Ta), 4.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4102DY-T1-E3 FAQ
1.How can I place an order for SI4102DY-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4102DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4102DY-T1-E3 reliable?
The price and inventory of SI4102DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4102DY-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI4102DY-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4102DY-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4102DY-T1-E3?
SI4102DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4102DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4102DY-T1-E3?
For technical support, including SI4102DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4102DY-T1-E3 requirements.
6.How does Aetrix verify that SI4102DY-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI4102DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4102DY-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI4102DY-T1-E3?
All SI4102DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4102DY-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4102DY-T1-E3 part is unused and in its original packaging.
Return procedure for SI4102DY-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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