My Inquiry
My Account
Vishay Siliconix SI4102DY-T1-GE3
- Part No.:
- SI4102DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4102DY-T1-GE3.pdf
- Description:
- MOSFET N-CH 100V 3.8A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,552
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI4102DY-T1-GE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® Power MOSFET in SO-8 package, with RDS(on) = 0.158 Ω at VGS = 10 V, continuous drain current of 3.8 A at TC = 25 °C, and total gate charge of 4.6 nC (VGS = 6 V). It is 100 % UIS tested and optimized for high-frequency boost converters and LED backlighting in LCD TVs.
For engineers reviewing the SI4102DY-T1-GE3 datasheet, SI4102DY-T1-GE3 pinout, SI4102DY-T1-GE3 application, or SI4102DY-T1-GE3 equivalent, key selection criteria include its 100 V VDS, low RDS(on) at 6 V gate drive, SO-8 thermal performance (RthJA = 53 °C/W max), and body diode recovery characteristics (trr = 50–80 ns).
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled gate charge distribution. Its dynamic parameters-including Ciss = 370 pF, Coss = 40 pF, and Qgd = 2 nC-support efficient operation in hard-switched DC-DC topologies up to several hundred kHz.
The device features a fully characterized body diode with VSD = 0.8–1.2 V at IS = 2.1 A and Qrr = 75–120 nC, enabling reliable synchronous rectification or freewheeling in boost stages without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports input voltages up to 80 V DC in boost converters with margin for transients |
| RDS(on) | 0.158 Ω @ VGS = 10 V - enables <1 W conduction loss at 2.5 A continuous drain current |
| ID (continuous) | 3.8 A @ TC = 25 °C - suitable for medium-power LED backlight drivers and auxiliary power rails |
| Qg | 4.6 nC @ VGS = 6 V - allows efficient gate driving from standard 5–6 V controllers without level-shifting |
| trr | 50–80 ns - minimizes reverse recovery losses during high-frequency switching transitions |
| RthJA | 53 °C/W max - defines thermal limit for PCB-mounted operation without heatsink under natural convection |
Pinout & Package
SI4102DY-T1-GE3 is housed in a standard SO-8 (MS-012) surface-mount package with exposed drain pad for enhanced thermal dissipation. Pin 1–8 follow JEDEC MS-012 outline with pins 1–4 and 5–8 forming two parallel source/drain/gate groups.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7, 8 | Drain (D) | Internally connected to common drain terminal and exposed thermal pad - primary current path and heat sink interface |
| 5 | Gate (G) | Control terminal requiring ≤ ±20 V gate drive; low input capacitance (Ciss = 370 pF) reduces driver loading |
| None (pin 1–4/6–8 tied) | Source (S) | Not assigned to discrete pins; sourced via internal connection to pins 1–4 and 6–8 drain terminals - requires external source trace routing |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers lower RDS(on) per die area than planar MOSFETs, enabling compact 8-lead SOIC packaging without sacrificing voltage rating |
| 100 % UIS tested | Guarantees ruggedness against unclamped inductive switching events common in boost converter turn-off transients |
| Lead (Pb)-free and halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709B requirements for environmentally compliant manufacturing |
| Body diode Qrr specification | Qrr = 75–120 nC enables predictable snubber design and reduces EMI in discontinuous conduction mode (DCM) operation |
Applications
| High-Frequency Boost Converter | LED Backlight for LCD TV |
|---|---|
Use Scenario: Step-up DC-DC stage converting 12 V or 24 V input to 40–100 V for CCFL or edge-lit LED strings. IC Role / Device Role / Timing Role: Primary switch operating at 200–500 kHz with hard-switched PWM control. Use Value: Low Qg (4.6 nC) and fast tr/tf (10–15 ns) reduce switching losses while maintaining efficiency >92% at full load. | Use Scenario: Constant-current driver powering 8–16 parallel white LED strings in large-format LCD panels. IC Role / Device Role / Timing Role: High-side switch controlling boost output voltage regulation loop in analog-dimming or PWM-dimming architectures. Use Value: 100 V VDS rating accommodates LED string voltage variations and transient surges without derating. |
| Industrial Power Supply Auxiliary Rail | USB-C PD Adapter Secondary Side Sync Rectifier |
Use Scenario: Isolated auxiliary supply generating +5 V or +3.3 V for control ICs and sensors in 48 V input systems. IC Role / Device Role / Timing Role: Synchronous rectifier in forward or flyback secondary side, replacing Schottky diodes. Use Value: Body diode VSD = 0.8–1.2 V and trr = 50–80 ns allow efficient replacement of 40 V Schottkys without oscillation risk. | Use Scenario: Secondary-side synchronous rectification in 65 W USB-C PD adapters with variable output (5–20 V). IC Role / Device Role / Timing Role: Low-side switch in active clamp or LLC resonant converter output stage. Use Value: RDS(on) = 0.158 Ω @ 10 V ensures <0.3 W conduction loss at 1.5 A average output current, improving overall adapter efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP050N10N3 G | RDS(on) = 4.8 mΩ (lower), Qg = 44 nC (higher), TO-220FP package | Higher power handling (80 A), unsuitable for space-constrained SO-8 layouts | Select when thermal budget allows larger package and ultra-low RDS(on) outweighs gate drive complexity |
| ON Semiconductor NTMFS4C09NT1G | RDS(on) = 0.115 Ω @ 10 V, SO-8, but VDS = 100 V and Qg = 11.5 nC | Higher gate charge increases driver loss at high frequency; identical footprint | Prefer for lower conduction loss where switching frequency ≤ 200 kHz and gate drive capability permits |
Compared with IPP050N10N3 G and NTMFS4C09NT1G, SI4102DY-T1-GE3 offers the best balance of low gate charge (4.6 nC), SO-8 compatibility, and proven 100 % UIS robustness-making it optimal for compact, high-frequency boost and LED driver designs where layout area and transient immunity are critical.
Availability
SI4102DY-T1-GE3 is available at Aetrix Electronics and suitable for high-frequency boost converters, LED backlight drivers, industrial auxiliary power supplies, and USB-C PD adapter secondary-side rectification requiring stable component supply across production lifecycles.
Supply support for SI4102DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The Si4102DY product line delivers high-voltage, medium-current TrenchFET® MOSFETs optimized for space-constrained, high-frequency DC-DC conversion in consumer, industrial, and display power systems.
FAQ
What is the maximum continuous drain current rating for SI4102DY-T1-GE3 at 70 °C case temperature?
The maximum continuous drain current for SI4102DY-T1-GE3 is 3.0 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be applied in thermal design calculations alongside RthJA = 53 °C/W to ensure junction temperature remains ≤ 150 °C. SI4102DY-T1-GE3 maintains safe operation under these conditions when mounted on a 1" × 1" FR4 board per test condition.
Does SI4102DY-T1-GE3 support gate drive from a 5 V microcontroller GPIO pin?
Yes, SI4102DY-T1-GE3 is fully compatible with 5 V gate drive: its VGS(th) is specified from 2 V to 4 V, and RDS(on) = 0.175 Ω is guaranteed at VGS = 6 V. At 5 V, the device achieves strong enhancement with RDS(on) ≈ 0.19 Ω (interpolated from typical curves), supporting reliable switching in low-voltage control applications. SI4102DY-T1-GE3 does not require gate boosting for functional operation at 5 V.
What is the body diode reverse recovery charge (Qrr) specification for SI4102DY-T1-GE3?
The body diode reverse recovery charge Qrr for SI4102DY-T1-GE3 is specified as 75–120 nC under test conditions of IF = 2.1 A, dI/dt = 100 A/µs, and TJ = 25 °C. This parameter directly impacts switching loss and EMI in hard-switched topologies where the body diode conducts freewheeling current. SI4102DY-T1-GE3's Qrr enables predictable snubber sizing and supports DCM operation in boost converters without excessive voltage overshoot.
Is SI4102DY-T1-GE3 suitable for use in automotive lighting modules?
SI4102DY-T1-GE3 is not AEC-Q101 qualified and is not recommended for automotive safety-critical lighting modules. While its 100 V rating and thermal performance suit LED backlighting in consumer LCD TVs, Vishay does not specify automotive-grade qualification, temperature cycling, or humidity testing for SI4102DY-T1-GE3. For automotive applications, designers should select AEC-Q101-compliant alternatives. SI4102DY-T1-GE3 remains appropriate for industrial and commercial LED drivers where extended temperature range (−55 to +150 °C) is sufficient.
How is thermal performance characterized for SI4102DY-T1-GE3 in SO-8 mounting?
Thermal performance of SI4102DY-T1-GE3 is characterized using two metrics: RthJA = 53 °C/W (max, t ≤ 10 s) for junction-to-ambient on a 1" × 1" FR4 board, and RthJF = 26 °C/W (max, steady state) for junction-to-foot (drain pad). The exposed drain pad serves as the primary thermal path; effective PCB copper pour under the pad is essential to realize rated RthJF. SI4102DY-T1-GE3's SO-8 footprint aligns with JEDEC MS-012 and supports standard reflow profiles per IPC-J-STD-020.
SI4102DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 158mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 370 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.4W (Ta), 4.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4102DY-T1-GE3 FAQ
1.How can I place an order for SI4102DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4102DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4102DY-T1-GE3 reliable?
The price and inventory of SI4102DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4102DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4102DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4102DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4102DY-T1-GE3?
SI4102DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4102DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4102DY-T1-GE3?
For technical support, including SI4102DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4102DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4102DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4102DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4102DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4102DY-T1-GE3?
All SI4102DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4102DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4102DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4102DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI4102DY-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
