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Vishay Siliconix SI4108DY-T1-GE3
- Part No.:
- SI4108DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4108DY-T1-GE3.pdf
- Description:
- MOSFET N-CH 75V 20.5A 8-SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,285
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Product details
Overview
SI4108DY-T1-GE3 from Vishay Siliconix is an N-channel 75-V TrenchFET® Power MOSFET in SO-8 package, rated for 20.5 A continuous drain current at TC = 25 °C, with RDS(on) = 0.0098 Ω at VGS = 10 V and total gate charge of 36 nC. It serves as a primary-side switch in isolated DC-DC converters requiring low conduction loss and fast switching.
For engineers reviewing the SI4108DY-T1-GE3 datasheet, SI4108DY-T1-GE3 pinout, SI4108DY-T1-GE3 application, or SI4108DY-T1-GE3 equivalent, key selection criteria include its 75-V VDS, 0.0098-Ω on-resistance, 36-nC Qg, SO-8 thermal performance (RthJA = 29 °C/W), and 100% UIS-tested ruggedness for hard-switching topologies.
Technical Context
This MOSFET employs Vishay's TrenchFET® process to achieve low RDS(on) and optimized gate charge for high-efficiency synchronous rectification and half-bridge switching. Its 75-V rating supports 48-V intermediate bus and PoE-powered systems, while 100% UIS testing ensures reliability under inductive load stress.
The device features a body diode with trr = 35–53 ns and Qrr = 49–75 nC, enabling moderate-frequency ZVS operation. Thermal design is supported by RthJF = 13 °C/W (steady-state) and validated SO-8 footprint compatibility with standard PCB layout practices for power MOSFETs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V - Supports 48-V input rails with 50% safety margin for transient overvoltage in telecom and industrial supplies. |
| RDS(on) | 0.0098 Ω at VGS = 10 V - Delivers ≤ 2.8 W conduction loss at 13.8 A, enabling compact thermal design without heatsink in <10-W dissipation layouts. |
| ID (continuous) | 20.5 A at TC = 25 °C - Enables high-current primary-side switching in 100–300 W isolated converters with FR4 board mounting. |
| Qg | 36 nC (typ.) - Allows efficient gate drive with standard 1-A peak drivers at 500 kHz switching, minimizing driver power loss. |
| trr / Qrr | 35–53 ns / 49–75 nC - Supports soft-switching in phase-shifted full-bridge and LLC resonant converters up to 300 kHz. |
| RthJA | 29 °C/W (typ.) - Enables 3.6 W power dissipation at TA = 25 °C on 1" × 1" FR4, simplifying thermal management in space-constrained modules. |
Pinout & Package
SO-8 surface-mount package with exposed drain pad for enhanced thermal performance and mechanical robustness. Pin 1–8 follow JEDEC MS-012AC standard; pins 1, 2, 3, and 4 are source terminals; pins 5, 6, 7, and 8 are drain terminals; pin 3 is gate.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source connections reduce package inductance and improve current sharing in high-di/dt applications. |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals and exposed copper pad provide low-inductance, high-current path to PCB ground plane. |
| 3 | Gate (G) | Single gate terminal located adjacent to source for minimized gate loop inlay; compatible with standard SO-8 gate driver footprints. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 0.0098 Ω RDS(on) in SO-8, reducing conduction loss by >35% vs. planar MOSFETs at same voltage class. |
| 100% UIS tested | Guarantees avalanche energy handling of 51.2 mJ, supporting reliable operation in unclamped inductive switching events. |
| Halogen-free & RoHS-compliant | Meets IPC-1752A material declaration requirements and EU Directive 2015/863 for environmentally constrained designs. |
| Exposed drain pad | Reduces RthJF to 13 °C/W, enabling 50% higher power density than standard SO-8 without thermal vias. |
Applications
| Primary Side Switch | Half-Bridge Topology |
|---|---|
Use Scenario: High-efficiency flyback and forward converter primary switch in 48-V telecom power supplies. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer during PWM on-time; operates at 100–300 kHz with hard switching. Use Value: Low RDS(on) minimizes conduction loss; 75-V rating accommodates reflected output voltage + input transients. |
Use Scenario: Upper and lower switches in non-isolated buck or two-switch forward converters. IC Role / Device Role / Timing Role: Synchronous switching pair driven with dead-time control; requires matched Qg and trr. Use Value: Identical RDS(on) and Qg across devices enables balanced current sharing and reduced shoot-through risk. |
| Intermediate Bus Converter | Industrial DC-DC Module |
Use Scenario: 48-V to 12-V step-down conversion in server rack power distribution units. IC Role / Device Role / Timing Role: Primary-side switch in fixed-frequency phase-shifted full-bridge topology. Use Value: Low Qrr and fast trr reduce body diode conduction loss during ZVS transitions. |
Use Scenario: Compact 200-W isolated DC-DC module for programmable logic controller (PLC) I/O power rails. IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward converter operating at 250 kHz. Use Value: 100% UIS testing ensures survival during fault conditions like output short-circuit or transformer saturation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.0085 Ω @ 10 V, but VDS = 60 V; SO-8 with single-source pinout. | Limited to ≤42-V input systems; unsuitable for 48-V bus with transients. | Select only if input voltage stays below 50 V and lower RDS(on) outweighs voltage margin loss. |
| STL220N6F7 | 60-V rating, 0.0035-Ω RDS(on), PowerFLAT 5x6 package; no exposed drain pad. | Higher current capability but inferior thermal resistance (RthJA ≈ 40 °C/W) and no UIS rating. | Prefer for high-current, low-voltage (<36 V) applications where board space is critical and avalanche stress is absent. |
Compared with IRF7470PBF and STL220N6F7, the SI4108DY-T1-GE3 uniquely balances 75-V ruggedness, 0.0098-Ω on-resistance, and 100% UIS validation-making it the only option among the three qualified for 48-V intermediate bus converters subject to line transients and unclamped inductive loads.
Availability
SI4108DY-T1-GE3 is available at Aetrix Electronics and suitable for intermediate bus converters, half-bridge motor drives, and industrial DC-DC modules requiring stable component supply, lead-free compliance, and verified avalanche performance.
Supply support for SI4108DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and ruggedness.
The SI4108DY-T1-GE3 belongs to Vishay's TrenchFET® Gen IV N-channel MOSFET product line, engineered for high-power-density, high-reliability switching in telecom, industrial, and computing power supplies.
FAQ
What is the maximum continuous drain current rating for SI4108DY-T1-GE3 at 70 °C case temperature?
The SI4108DY-T1-GE3 supports 16.4 A continuous drain current at TC = 70 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package under sustained power dissipation and must be validated against actual board layout and airflow conditions in the final design. The SI4108DY-T1-GE3 datasheet specifies this value under steady-state conditions with proper PCB copper area.
Does SI4108DY-T1-GE3 have a specified body diode reverse recovery time?
Yes, the SI4108DY-T1-GE3 has a body diode reverse recovery time (trr) of 35–53 ns, measured at IF = 10 A, di/dt = 100 A/µs, and TJ = 25 °C. This parameter is explicitly listed in the Drain-Source Body Diode Characteristics section of the datasheet and directly impacts switching loss in synchronous rectifier and half-bridge configurations using the intrinsic diode.
Is SI4108DY-T1-GE3 suitable for use in automotive applications?
The SI4108DY-T1-GE3 is not AEC-Q101 qualified and lacks automotive-grade screening, temperature range extension beyond –55 °C to +150 °C, or automotive-specific reliability data. While its junction temperature range overlaps with automotive requirements, Vishay does not designate the SI4108DY-T1-GE3 for automotive use; designers must select AEC-Q101-qualified alternatives such as the Si7850DP for such applications.
What is the gate threshold voltage range for SI4108DY-T1-GE3?
The SI4108DY-T1-GE3 has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V, measured at VDS = VGS and ID = 250 µA. This range ensures reliable turn-on with standard 3.3-V or 5-V logic-level gate drivers while maintaining noise immunity against spurious gate triggering in noisy power environments.
How is thermal performance characterized for SI4108DY-T1-GE3 on a standard PCB?
Thermal performance of the SI4108DY-T1-GE3 is characterized on a 1" × 1" FR4 board: RthJA = 29 °C/W (typ.), RthJF = 13 °C/W (steady-state). These values assume standard solder mask-defined copper pour and no additional heatsinking. The SI4108DY-T1-GE3 datasheet provides normalized thermal transient impedance curves to support dynamic power pulse analysis in real-world duty cycles.
SI4108DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 20.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 9.8mOhm @ 13.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 54 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 2100 pF @ 38 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4108DY-T1-GE3 FAQ
1.How can I place an order for SI4108DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4108DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4108DY-T1-GE3 reliable?
The price and inventory of SI4108DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4108DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4108DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4108DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4108DY-T1-GE3?
SI4108DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4108DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4108DY-T1-GE3?
For technical support, including SI4108DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4108DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4108DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4108DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4108DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4108DY-T1-GE3?
All SI4108DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4108DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4108DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4108DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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