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Vishay Siliconix SI4114DY-T1-E3
- Part No.:
- SI4114DY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4114DY-T1-E3.pdf
- Description:
- MOSFET N-CH 20V 20A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:10,990
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Product details
Overview
SI4114DY-T1-E3 from Vishay Siliconix is an N-channel 20 V (D-S) TrenchFET® power MOSFET in SO-8 package, rated for 20 A continuous drain current at TC = 25 °C, with RDS(on) of 6.0 mΩ at VGS = 10 V and 7.0 mΩ at VGS = 4.5 V, optimized as a low-side switch in synchronous buck converters for PC and game machine power stages.
For engineers reviewing the SI4114DY-T1-E3 datasheet, SI4114DY-T1-E3 pinout, SI4114DY-T1-E3 application, or SI4114DY-T1-E3 equivalent, key selection criteria include its 27.5 nC total gate charge at 4.5 V drive, 3700 pF input capacitance, 100% Rg and UIS tested reliability, and thermal resistance of 39 °C/W (typical junction-to-ambient).
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching performance. Its gate threshold voltage range (1.0–2.1 V) enables compatibility with 3.3 V and 5 V logic-level gate drivers, while the 16 V maximum gate-source voltage supports robust drive margin.
The device integrates a body diode with 0.71–1.1 V forward voltage at 2 A and 26 ns reverse recovery time, supporting efficient synchronous rectification. Thermal design is enabled by a junction-to-foot thermal resistance of 18 °C/W (typical), facilitating direct heat transfer from drain pads to PCB copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum drain-source blocking voltage; defines safe operating range in low-voltage DC-DC stages. |
| RDS(on) @ 10 V | 6.0 mΩ - Enables <100 mW conduction loss at 10 A, critical for high-efficiency buck converter output stages. |
| RDS(on) @ 4.5 V | 7.0 mΩ - Ensures usable on-resistance with standard 5 V gate drive, reducing need for level-shifting circuitry. |
| Qg @ 4.5 V | 27.5 nC - Determines gate drive power and switching speed; enables ~25 ns rise/fall times with 1 Ω driver. |
| Ciss | 3700 pF - Impacts gate drive requirements and EMI behavior; typical for high-current SO-8 MOSFETs. |
| TJ Range | −55 to +150 °C - Supports operation in thermally demanding environments such as gaming PSU and CPU VRMs. |
| PD @ TC = 25 °C | 5.7 W - Defines maximum steady-state power dissipation when mounted on heatsinked board area. |
Pinout & Package
SI4114DY-T1-E3 is housed in a lead (Pb)-free, halogen-free SO-8 (MS-012) surface-mount package with exposed drain pads on pins 1–3 and 5–8 for enhanced thermal conduction. The package measures 4.9 mm × 6.0 mm × 1.5 mm (D × H × A) with 1.27 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5, 6, 7, 8 | Drain (D) | Seven parallel drain terminals - collectively handle full 20 A current and provide low-inductance, low-thermal-resistance path to PCB ground plane. |
| 4 | Gate (G) | Single gate input - accepts standard logic-level drive; 0.15–1.4 Ω gate resistance aids in damping oscillation during switching. |
| - | Source (S) | Internally connected to substrate - source node is accessible only via PCB trace; requires careful layout to minimize source inductance. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers industry-leading RDS(on) × Qg figure-of-merit for high-frequency synchronous buck efficiency. |
| 100% Rg and UIS tested | Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress. |
| SO-8 with multiple drain leads | Provides 3× higher thermal conductivity vs. standard SO-8, enabling >5 W dissipation without external heatsink. |
| Low VGS(th) (1.0–2.1 V) | Guarantees turn-on with 3.3 V microcontroller GPIO or PWM controller outputs without level shifters. |
| Body diode trr = 26 ns | Reduces reverse recovery losses during dead-time commutation, improving light-load efficiency in buck topologies. |
Applications
| Gaming Power Supply | Desktop PC VRM |
|---|---|
Use Scenario: High-current, multi-phase 12 V → 1.2 V conversion for GPU power delivery in compact gaming PSUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in each buck phase, switching at 300–600 kHz with precise dead-time control. Use Value: 7.0 mΩ RDS(on) at 4.5 V drive minimizes conduction loss under dynamic load transients up to 50 A peak. | Use Scenario: Core voltage regulation for Intel/AMD desktop CPUs requiring tight voltage accuracy and fast transient response. IC Role / Device Role / Timing Role: Bottom-FET in interleaved multiphase buck converters, driven by dedicated gate controllers (e.g., IR35201). Use Value: 27.5 nC Qg enables fast turn-on with minimal gate drive loss, supporting >500 kHz switching for improved transient suppression. |
| Embedded System PMIC | Industrial Motor Control Driver |
Use Scenario: Secondary-side 5 V or 3.3 V point-of-load regulation in fanless embedded controllers with space constraints. IC Role / Device Role / Timing Role: Low-side switch in compact, thermally isolated buck stage integrated into multilayer PCB with internal ground planes. Use Value: −55 to +150 °C operating range and 39 °C/W RthJA allow reliable operation without forced air cooling in sealed enclosures. | Use Scenario: Gate drive power stage for small BLDC motors in HVAC actuators or robotic joints requiring silent, efficient commutation. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, synchronized with high-side driver for 6-step commutation. Use Value: Fast 26 ns body diode trr reduces shoot-through risk and improves efficiency at 20–40 kHz PWM frequencies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | Higher RDS(on) (9.5 mΩ @ 10 V), larger SO-8 footprint, no 100% UIS test. | Less suitable for high-current, high-frequency buck where conduction loss dominates. | Prefer SI4114DY-T1-E3 where <7 mΩ RDS(on) and verified UIS robustness are required. |
| DMN2020LSD-13 | Lower Qg (14 nC @ 4.5 V), but higher RDS(on) (12 mΩ @ 4.5 V); dual-N in same SO-8. | Better for space-constrained dual-switch designs, but sacrifices conduction efficiency at >8 A. | Select SI4114DY-T1-E3 for single high-current low-side use; DMN2020LSD-13 only if dual-device integration is mandatory. |
Compared with IRF7470PBF and DMN2020LSD-13, SI4114DY-T1-E3 delivers the lowest RDS(on) × Qg product in its class, making it optimal for high-efficiency, high-current synchronous buck output stages where thermal headroom and gate drive simplicity are critical.
Availability
SI4114DY-T1-E3 is available at Aetrix Electronics and suitable for gaming power supplies, desktop PC VRMs, and industrial motor control drivers requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SI4114DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for computing, industrial, and automotive markets.
The SI4114DY-T1-E3 belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-current, high-frequency DC-DC conversion in space- and thermally constrained applications like CPU/GPU VRMs and compact power modules.
FAQ
What is the maximum continuous drain current rating for SI4114DY-T1-E3 at 70 °C case temperature?
The SI4114DY-T1-E3 supports 18.2 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package under sustained power dissipation; actual usable current depends on PCB copper area and airflow. The SI4114DY-T1-E3 maintains RDS(on) stability across this range due to its trench-gate structure.
Does SI4114DY-T1-E3 require a gate resistor for stable operation in a 500 kHz buck converter?
Yes - a 1–5 Ω gate resistor is recommended for the SI4114DY-T1-E3 to damp ringing and control dV/dt during switching. The device's 0.15–1.4 Ω intrinsic gate resistance helps, but external resistance ensures robust turn-on/turn-off timing and EMI compliance. For 500 kHz operation, a 2.2 Ω resistor balances speed and stability in typical VRM layouts using the SI4114DY-T1-E3.
Can SI4114DY-T1-E3 be used as a high-side switch in a floating gate configuration?
No - the SI4114DY-T1-E3 is optimized as a low-side switch and lacks integrated level-shifting or bootstrap capability. Its gate threshold (1.0–2.1 V) and absolute maximum VGS (±16 V) do not support reliable high-side operation without external gate driver ICs rated for 20 V+ bootstrap voltage. Use dedicated high-side drivers (e.g., IR2110) with SI4114DY-T1-E3 only in complementary half-bridge setups.
Is SI4114DY-T1-E3 compliant with RoHS and REACH environmental standards?
Yes - SI4114DY-T1-E3 is lead (Pb)-free and halogen-free per Vishay's documentation (ordering code suffix "-E3" denotes Pb-free, "-GE3" adds halogen-free). It meets RoHS Directive 2011/65/EU and REACH SVHC thresholds, with material declarations available under Vishay document #99912. Traceability and compliance are maintained across all manufacturing sites producing the SI4114DY-T1-E3.
What is the typical body diode forward voltage of SI4114DY-T1-E3 at 2 A source current?
The typical body diode forward voltage (VSD) of SI4114DY-T1-E3 is 0.71 V at IS = 2 A and TJ = 25 °C, with a maximum of 1.1 V. This low VSD reduces conduction loss during synchronous rectification dead time and improves light-load efficiency. The SI4114DY-T1-E3 body diode also exhibits 26 ns reverse recovery time, minimizing associated switching loss.
SI4114DY-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 95 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3700 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 5.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4114DY-T1-E3 FAQ
1.How can I place an order for SI4114DY-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4114DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4114DY-T1-E3 reliable?
The price and inventory of SI4114DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4114DY-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI4114DY-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4114DY-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4114DY-T1-E3?
SI4114DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4114DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4114DY-T1-E3?
For technical support, including SI4114DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4114DY-T1-E3 requirements.
6.How does Aetrix verify that SI4114DY-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI4114DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4114DY-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI4114DY-T1-E3?
All SI4114DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4114DY-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4114DY-T1-E3 part is unused and in its original packaging.
Return procedure for SI4114DY-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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