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Vishay Siliconix SI4114DY-T1-GE3
- Part No.:
- SI4114DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4114DY-T1-GE3.pdf
- Description:
- MOSFET N-CH 20V 20A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:281,301
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Product details
Overview
SI4114DY-T1-GE3 from Vishay Siliconix is an N-channel 20 V TrenchFET® power MOSFET in SO-8 package, rated for 20 A continuous drain current at TC = 25 °C, with RDS(on) of 6.0 mΩ at VGS = 10 V and 7.0 mΩ at VGS = 4.5 V, optimized for low-side synchronous buck conversion in PC and game machine power stages.
For engineers reviewing the SI4114DY-T1-GE3 datasheet, SI4114DY-T1-GE3 pinout, SI4114DY-T1-GE3 application, or SI4114DY-T1-GE3 equivalent, key selection criteria include gate charge (27.5 nC typ. at 4.5 V), thermal resistance (RthJA max 50 °C/W), body diode recovery (trr = 26 ns typ.), and Pb-free/halogen-free compliance per ordering code.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled gate charge distribution. Its SO-8 package integrates four drain terminals (pins 5–8) and three source terminals (pins 1–3) to minimize package inductance and improve current sharing in high-frequency DC/DC converters.
The device features a gate threshold voltage of 1.0–2.1 V, 100% Rg and UIS tested, and is characterized for operation across -55 °C to +150 °C junction temperature range. Body diode forward voltage is 0.71 V typ. at IS = 2 A, supporting efficient reverse recovery in synchronous rectification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (max) | 20 V - defines maximum blocking voltage in low-voltage synchronous buck topologies |
| RDS(on) (max) @ 10 V | 6.0 mΩ - enables <1 W conduction loss at 20 A in compact PCB layouts |
| RDS(on) (max) @ 4.5 V | 7.0 mΩ - ensures robust turn-on under 5 V gate drive from standard controllers |
| Qg (typ) @ 4.5 V | 27.5 nC - balances switching speed and gate driver loading in 300–1000 kHz designs |
| ID (cont) @ TC = 25 °C | 20 A - supports high-current CPU/GPU VRMs without external heatsinking |
| trr (typ) | 26 ns - reduces body diode conduction loss and EMI in hard-switched synchronous rectifiers |
| RthJA (max) | 50 °C/W - sets thermal design margin for 2.5 W dissipation on standard FR4 board |
Pinout & Package
SO-8 (Narrow) package per JEDEC MS-012, with exposed drain pad (pins 5–8) for enhanced thermal performance and dual-source configuration (pins 1–3) to reduce source inductance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source node; low-inductance parallel connection improves current sharing and dI/dt immunity |
| 4 | Gate | Single gate input; Rg = 0.15–1.4 Ω typical enables stable gate drive with minimal ringing |
| 5, 6, 7, 8 | Drain | Four parallel drain terminals tied to internal die drain metallization; reduces package resistance and thermal impedance |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 6.0 mΩ RDS(on) at 20 V rating-higher cell density than planar MOSFETs for same die size |
| 100% Rg and UIS tested | Ensures gate robustness against transient overvoltage and avalanche energy handling up to 45 mJ |
| Four-drain / three-source SO-8 layout | Reduces effective package inductance by ~30% vs. standard SO-8, critical for >500 kHz switching |
| Pb-free and halogen-free (GE3) | Complies with RoHS Directive 2011/65/EU and IEC 61249-2-21:2011 for green manufacturing |
| Body diode trr = 26 ns (typ) | Minimizes reverse recovery loss and associated shoot-through risk in synchronous buck phase nodes |
Applications
| PC Voltage Regulator Modules | Game Console Power Supplies |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.5 V) at up to 100 A total. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating in continuous conduction mode at 500–1000 kHz. Use Value: 6.0 mΩ RDS(on) limits conduction loss to ≤1.2 W at 20 A, while 27.5 nC Qg enables clean gate drive with standard 1-A drivers. |
Use Scenario: Compact 12 V input to 1.2 V/30 A output DC/DC stage in handheld or home game consoles. IC Role / Device Role / Timing Role: Low-side switch in single-phase or interleaved buck regulator powering SoC and memory subsystems. Use Value: Four-drain SO-8 layout lowers thermal resistance to footprint, enabling 20 A operation on 1" × 1" FR4 without thermal vias. |
| Industrial Motor Control Drivers | Point-of-Load Converters |
Use Scenario: Half-bridge gate driver stage for 24 V BLDC motor control in factory automation equipment. IC Role / Device Role / Timing Role: Low-side switch in H-bridge output stage, commutated at 20–100 kHz with PWM duty cycling. Use Value: 30 A ID(on) rating and 30 ns fall time support high peak currents during motor startup without thermal runaway. |
Use Scenario: Secondary-side synchronous rectifier in isolated 48 V-to-3.3 V DC/DC module for networking equipment. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in active-clamp forward or LLC secondary. Use Value: 0.71 V VSD and 26 ns trr reduce conduction and recovery losses by >40% vs. 40 V Schottky, improving efficiency at light load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 5.8 mΩ @ 10 V but higher Qg (42 nC); SO-8 package with standard pinout | Higher gate drive power required; less suitable for 4.5 V gate drive systems | Prefer when 10 V gate drive is available and lowest RDS(on) is priority over switching loss |
| DMN2020LFG-7 | RDS(on) = 7.5 mΩ @ 4.5 V; smaller 2 mm × 2 mm DFN package with no exposed drain pad | Limited thermal dissipation (RthJA = 100 °C/W); unsuitable for >10 A continuous operation | Prefer for space-constrained designs where peak current ≤8 A and board area is critical |
Compared with IRF7470PBF and DMN2020LFG-7, SI4114DY-T1-GE3 delivers optimal balance of low 4.5 V RDS(on), moderate Qg, and SO-8 thermal performance-making it uniquely suited for cost-sensitive, high-current 5 V–12 V input synchronous buck converters requiring industrial-grade reliability.
Availability
SI4114DY-T1-GE3 is available at Aetrix Electronics and suitable for PC VRMs, game console power supplies, and industrial motor control drivers requiring stable component supply, RoHS-compliant packaging, and proven thermal performance in SO-8 format.
Supply support for SI4114DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for industrial and computing markets.
The SI4114DY-T1-GE3 belongs to Vishay's TrenchFET® Gen III family, engineered specifically for low-voltage, high-current synchronous rectification in computing and consumer power conversion where RDS(on), Qg, and thermal robustness are co-optimized.
FAQ
What is the maximum continuous drain current rating for SI4114DY-T1-GE3 at 70 °C case temperature?
The SI4114DY-T1-GE3 supports 18.2 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package under sustained power dissipation, and must be validated against actual board layout and airflow conditions in the final design.
Does SI4114DY-T1-GE3 support 4.5 V gate drive in synchronous buck applications?
Yes, SI4114DY-T1-GE3 is fully characterized for 4.5 V gate drive, with RDS(on) max of 7.0 mΩ at ID = 7 A and VGS = 4.5 V. Its 1.0–2.1 V gate threshold voltage ensures strong enhancement-mode turn-on even with controller output tolerances, making it suitable for 5 V logic-level gate drivers.
What is the thermal resistance from junction to ambient (RthJA) for SI4114DY-T1-GE3 on a standard FR4 board?
SI4114DY-T1-GE3 has a maximum RthJA of 50 °C/W when mounted on a 1" × 1" FR4 board, per note b in the Thermal Resistance Ratings table. The typical value is 39 °C/W, and this parameter directly determines allowable power dissipation (PD = (TJmax − TA)/RthJA) in thermally constrained layouts.
How does the body diode performance of SI4114DY-T1-GE3 compare to standard Schottky rectifiers?
The SI4114DY-T1-GE3 body diode exhibits VSD = 0.71 V typ. at IS = 2 A and trr = 26 ns typ., offering lower forward drop than many 40 V Schottkys (typically 0.45–0.55 V at low current but rising sharply above 1 A) and significantly faster recovery-reducing switching loss and EMI in synchronous rectification.
Is SI4114DY-T1-GE3 pin-compatible with other SO-8 N-channel MOSFETs like the SI4410DY?
No, SI4114DY-T1-GE3 is not pin-compatible with SI4410DY. While both use SO-8 packages, SI4114DY-T1-GE3 uses a proprietary 3-source/4-drain pinout (pins 1–3 = S, pins 5–8 = D), whereas SI4410DY follows standard SO-8 MOSFET pinout (pins 1–3 = G/S/S, pins 5–8 = D/D/D/D). PCB layout must match the exact terminal mapping.
SI4114DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 95 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3700 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 5.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4114DY-T1-GE3 FAQ
1.How can I place an order for SI4114DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4114DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4114DY-T1-GE3 reliable?
The price and inventory of SI4114DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4114DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4114DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4114DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4114DY-T1-GE3?
SI4114DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4114DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4114DY-T1-GE3?
For technical support, including SI4114DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4114DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4114DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4114DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4114DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4114DY-T1-GE3?
All SI4114DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4114DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4114DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4114DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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