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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4116DY-T1-E3

Name: SI4116DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4116DY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4116DY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4116DY-T1-E3.pdf

Description:: MOSFET N-CH 25V 18A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SI4116DY-T1-E3 from Vishay Siliconix is an N-channel 25 V TrenchFET® power MOSFET in SO-8 package, rated for 18 A continuous drain current at TC = 25 °C, with R_DS(on) of 7.1 mΩ at V_GS = 10 V and 7.8 mΩ at V_GS = 4.5 V, optimized as a low-side switch in synchronous buck converters.

For engineers reviewing the SI4116DY-T1-E3 datasheet, SI4116DY-T1-E3 pinout, SI4116DY-T1-E3 application, or SI4116DY-T1-E3 equivalent, key selection criteria include its 17.5 nC total gate charge at 4.5 V drive, 1925 pF input capacitance, 100% R_g and UIS tested reliability, and thermal resistance of 19 °C/W (junction-to-foot), critical for high-efficiency DC-DC power stages.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled gate charge distribution. Its dynamic parameters - including 13 ns turn-on delay and 9 ns fall time at 10 V drive - support high-frequency operation up to 1 MHz in modern point-of-load regulators.

The device integrates a robust body diode with 26 ns reverse recovery time and 16 nC Q_rr, enabling efficient synchronous rectification without external Schottky diodes. Thermal design is supported by validated junction-to-foot (R_thJF) and junction-to-ambient (R_thJA) metrics under standardized PCB mounting conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage compatible with 3.3 V–12 V input rails in step-down converters
R_DS(on) @ V_GS = 10 V	7.1 mΩ typ. - Enables <1 W conduction loss at 10 A, reducing thermal load in compact layouts
R_DS(on) @ V_GS = 4.5 V	7.8 mΩ typ. - Supports logic-level gate drive from 5 V microcontrollers or PWM controllers
Q_g @ V_GS = 4.5 V	17.5 nC typ. - Determines gate driver power requirement and switching loss at 500 kHz–1 MHz
C_iss	1925 pF - Impacts gate drive loop stability and EMI filtering requirements in high-dV/dt environments
T_J Range	−55 °C to +150 °C - Qualified for industrial and automotive under-hood ambient conditions
R_thJF	19 °C/W max - Enables direct thermal coupling to PCB copper pour or heatsink for >3 W dissipation

Pinout & Package

SO-8 (Narrow) package per JEDEC MS-012, surface-mount, lead (Pb)-free and halogen-free compliant. Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8	Drain (D), Source (S), Gate (G)	Pins 1–3 & 5–8: Drain (common internal connection); Pin 4: Gate; Pins 6–8: Source - dual-source configuration lowers parasitic inductance in high-current paths

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lowest R_DS(on) per die area among SO-8 N-ch MOSFETs at 25 V rating
100% R_g and UIS tested	Ensures gate robustness against transient overvoltage and avalanche energy handling up to 20 mJ
Low Q_gd/Q_g ratio (≈0.19)	Reduces Miller effect, improving hard-switching immunity and enabling stable operation with low-side gate drivers
Body diode with t_rr = 26 ns	Minimizes reverse recovery losses during synchronous rectification, supporting >95% efficiency at 10 A
SO-8 footprint compatibility	Enables drop-in replacement for legacy 25 V/20 A MOSFETs without PCB redesign

Applications

Server VRM	Industrial PLC Power Supply
Use Scenario: High-current, multi-phase buck converter supplying core voltage to Xeon or AMD EPYC processors. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in each phase, switching at 500 kHz–1 MHz with 4.5 V gate drive. Use Value: 7.1 mΩ R_DS(on) reduces conduction loss by ≥15% vs. comparable 8 mΩ devices, lowering thermal stress on 6-layer PCBs.	Use Scenario: Isolated 24 V input to 5 V/3.3 V auxiliary rail in programmable logic controller backplane. IC Role / Device Role / Timing Role: Secondary-side synchronous FET in active-clamp forward or LLC resonant converter. Use Value: 26 ns body diode t_rr and 16 nC Q_rr cut dead-time losses by 30% versus standard silicon diodes, improving light-load efficiency.
Automotive ADAS Camera Module	5G Base Station RF Power Amplifier Bias
Use Scenario: Compact 12 V input to 1.2 V output buck regulator powering image sensor and ISP SoC. IC Role / Device Role / Timing Role: Low-side switch operating at 2 MHz with 5 V gate driver IC, exposed to −40 °C to +105 °C ambient. Use Value: −55 °C to +150 °C T_J range and 100% UIS testing ensure reliability under automotive thermal cycling and load dump transients.	Use Scenario: Envelope-tracking bias supply for GaN HEMT driver stage requiring fast transient response and low noise. IC Role / Device Role / Timing Role: Low-R_DS(on) pass element in linear post-regulator following buck pre-regulator. Use Value: 7.8 mΩ R_DS(on) at 4.5 V enables <50 mV dropout at 4 A, minimizing heat generation near sensitive RF components.

Server VRM

Industrial PLC Power Supply

Use Scenario: High-current, multi-phase buck converter supplying core voltage to Xeon or AMD EPYC processors.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in each phase, switching at 500 kHz–1 MHz with 4.5 V gate drive.

Use Value: 7.1 mΩ R_DS(on) reduces conduction loss by ≥15% vs. comparable 8 mΩ devices, lowering thermal stress on 6-layer PCBs.

Use Scenario: Isolated 24 V input to 5 V/3.3 V auxiliary rail in programmable logic controller backplane.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET in active-clamp forward or LLC resonant converter.

Use Value: 26 ns body diode t_rr and 16 nC Q_rr cut dead-time losses by 30% versus standard silicon diodes, improving light-load efficiency.

Automotive ADAS Camera Module

5G Base Station RF Power Amplifier Bias

Use Scenario: Compact 12 V input to 1.2 V output buck regulator powering image sensor and ISP SoC.

IC Role / Device Role / Timing Role: Low-side switch operating at 2 MHz with 5 V gate driver IC, exposed to −40 °C to +105 °C ambient.

Use Value: −55 °C to +150 °C T_J range and 100% UIS testing ensure reliability under automotive thermal cycling and load dump transients.

Use Scenario: Envelope-tracking bias supply for GaN HEMT driver stage requiring fast transient response and low noise.

IC Role / Device Role / Timing Role: Low-R_DS(on) pass element in linear post-regulator following buck pre-regulator.

Use Value: 7.8 mΩ R_DS(on) at 4.5 V enables <50 mV dropout at 4 A, minimizing heat generation near sensitive RF components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 8.5 mΩ @ 10 V; Q_g = 22 nC; SO-8 package	Higher gate charge increases switching loss above 300 kHz; suitable for lower-frequency industrial SMPS	Prefer SI4116DY-T1-E3 for >500 kHz designs requiring minimal Q_g and tighter R_DS(on) tolerance
DMN2020LSD-13	R_DS(on) = 9.5 mΩ @ 4.5 V; C_iss = 1500 pF; dual-N in SO-8	Higher R_DS(on) and no 100% UIS test; intended for cost-sensitive consumer DC-DC	SI4116DY-T1-E3 offers superior avalanche ruggedness and 15% lower conduction loss for mission-critical power stages

Compared with IRF7470PBF and DMN2020LSD-13, SI4116DY-T1-E3 delivers the lowest combination of R_DS(on), Q_g, and body diode Q_rr in SO-8, making it optimal for high-efficiency, high-frequency synchronous buck topologies where thermal margin and transient robustness are critical.

Availability

SI4116DY-T1-E3 is available at Aetrix Electronics and suitable for server VRMs, industrial PLC power supplies, and automotive ADAS camera modules requiring stable component supply and long-term production continuity.

Supply support for SI4116DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI4116DY-T1-E3 belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-current, high-frequency DC-DC conversion in computing, industrial, and automotive applications where low R_DS(on) and fast switching are essential.

FAQ

What is the maximum continuous drain current rating for SI4116DY-T1-E3 at 70 °C case temperature?

The SI4116DY-T1-E3 supports 14.3 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under typical PCB mounting conditions and ensures safe operation within the 150 °C maximum junction temperature. Designers must verify actual board-level thermal performance using the 19 °C/W R_thJF value.

Does SI4116DY-T1-E3 support 3.3 V gate drive in logic-level applications?

The SI4116DY-T1-E3 is not characterized for reliable enhancement-mode operation below V_GS(th) = 0.6 V min., and its R_DS(on) rises sharply below 4.5 V. At 3.3 V gate drive, R_DS(on) exceeds 20 mΩ - unsuitable for high-current switching. SI4116DY-T1-E3 requires ≥4.5 V gate voltage to achieve its specified 7.8 mΩ on-resistance.

What is the body diode forward voltage of SI4116DY-T1-E3 at 3 A source current?

The SI4116DY-T1-E3 body diode exhibits a forward voltage of 0.69 V typ. and 1.1 V max. at IS = 3 A and TJ = 25 °C, as stated in the Drain-Source Body Diode Characteristics section. This low V_SD supports efficient synchronous rectification and reduces reverse recovery losses compared to discrete Schottky solutions.

Is SI4116DY-T1-E3 qualified for automotive applications per AEC-Q101?

No - SI4116DY-T1-E3 is not AEC-Q101 qualified. While its −55 °C to +150 °C operating junction temperature range meets automotive ambient requirements, Vishay does not list this part in its AEC-Q101 qualified portfolio. For automotive use, designers should select explicitly qualified alternatives such as the SiHx202 series.

How is thermal performance measured for SI4116DY-T1-E3 - junction-to-ambient or junction-to-foot?

Thermal performance of SI4116DY-T1-E3 is specified with both metrics: R_thJA = 43 °C/W typ. (1" × 1" FR4 board) and R_thJF = 19 °C/W typ. (steady-state, junction-to-drain foot). The latter is more relevant for designs with direct thermal vias or metal-core PCBs, while R_thJA applies to standard surface-mount layouts without added heatsinking.

SI4116DY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.6mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 1925 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4116DY-T1-E3 FAQ

1.How can I place an order for SI4116DY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4116DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4116DY-T1-E3 reliable?

The price and inventory of SI4116DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4116DY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4116DY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4116DY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4116DY-T1-E3?

SI4116DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4116DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4116DY-T1-E3?

For technical support, including SI4116DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4116DY-T1-E3 requirements.

6.How does Aetrix verify that SI4116DY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4116DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4116DY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4116DY-T1-E3?

All SI4116DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4116DY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4116DY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4116DY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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