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Vishay Siliconix SI4124DY-T1-E3
- Part No.:
- SI4124DY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4124DY-T1-E3.pdf
- Description:
- MOSFET N-CH 40V 20.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:5,430
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Product details
Overview
SI4124DY-T1-E3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® power MOSFET in SO-8 package, rated for 20.5 A continuous drain current at TC = 25 °C, with RDS(on) of 7.5 mΩ at VGS = 10 V and 9.0 mΩ at VGS = 4.5 V, optimized for synchronous rectification and DC/DC converter high-side or low-side switching.
For engineers reviewing the SI4124DY-T1-E3 datasheet, SI4124DY-T1-E3 pinout, SI4124DY-T1-E3 application, or SI4124DY-T1-E3 equivalent, key selection criteria include gate charge (21 nC typ. at 4.5 V), thermal resistance (RthJA max 50 °C/W), body diode recovery (trr = 25–50 ns), and SO-8 footprint compatibility with standard PCB layout practices for power management designs.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate threshold voltage (1–3 V) enables direct drive from 3.3 V and 5 V logic controllers, while its 21 nC total gate charge at 4.5 V supports efficient operation in high-frequency DC/DC topologies up to 1 MHz.
The device integrates a robust intrinsic body diode with 0.8–1.2 V forward voltage at 10 A and 19–38 nC reverse recovery charge, enabling reliable synchronous rectification without external Schottky diodes. Thermal design is supported by validated junction-to-foot (RthJF max 22 °C/W) and junction-to-ambient (RthJA max 50 °C/W) metrics under JEDEC-standard mounting conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 40 V - defines maximum blocking voltage in high-side switch or freewheeling path applications |
| RDS(on) @ 10 V | 7.5 mΩ - enables <1.5 W conduction loss at 14 A, critical for thermally constrained DC/DC modules |
| Qg @ 4.5 V | 21 nC - determines gate driver power requirement and switching loss in 300–1000 kHz converters |
| ID continuous | 20.5 A @ TC = 25 °C - sets maximum steady-state current handling with external heatsinking |
| trr | 25–50 ns - ensures minimal dead-time penalty and reduced shoot-through risk in synchronous buck stages |
| VGS(th) | 1–3 V - guarantees turn-on with standard logic-level microcontrollers and PWM controllers |
| RthJA max | 50 °C/W - establishes minimum copper area and via count needed for 2.5 W ambient-power dissipation |
Pinout & Package
SI4124DY-T1-E3 is housed in a lead (Pb)-free, halogen-free SO-8 (MS-012) surface-mount package measuring 4.9 mm × 3.9 mm × 1.5 mm, with exposed drain paddle for enhanced thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection for internal parallel FET die; requires low-inductance ground plane routing |
| 5, 6, 7, 8 | Drain (D) | High-current output node tied to exposed paddle; must be connected to large copper pour for thermal relief |
| 4 | Gate (G) | Single gate input with 0.75–1.5 Ω internal gate resistance; compatible with standard MOSFET drivers |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 30% lower RDS(on) vs. planar MOSFETs at same die size, improving power density in compact converters |
| 100% Rg tested | Ensures consistent gate drive timing across production lots, reducing need for gate resistor tuning in volume designs |
| Low Qgd / Qg ratio | Qgd = 3.0 nC / Qg = 21 nC → 14% - minimizes Miller plateau duration, enhancing hard-switching robustness |
| Body diode softness | trr = 25–50 ns with ta/tb ≈ 1 - reduces EMI generation during reverse recovery in synchronous rectifiers |
| Junction temp range | -55 to +150 °C - supports operation in automotive under-hood and industrial motor control environments |
Applications
| Server VRM Power Stage | Industrial DC/DC Converter |
|---|---|
Use Scenario: High-efficiency 12 V input to 1.2 V/100 A output multiphase buck converter in data center server CPU VRMs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500–800 kHz with precise dead-time control. Use Value: 7.5 mΩ RDS(on) limits conduction loss to ≤1.05 W at 14 A per phase, enabling >94% efficiency at full load without forced air cooling. |
Use Scenario: 48 V to 12 V isolated DC/DC module for PLC I/O power supplies in factory automation cabinets. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp flyback topology. Use Value: 21 nC Qg at 4.5 V allows use of low-cost integrated gate drivers (e.g., UCC27524), reducing BOM cost by $0.18/unit. |
| Automotive Body Control Module | Telecom PoE PSE Controller |
Use Scenario: 12 V battery-fed 5 V/3 A auxiliary supply in BCM, requiring AEC-Q101-compliant components. IC Role / Device Role / Timing Role: High-side load switch with fast turn-off for short-circuit protection in lighting and sensor rails. Use Value: 33 A avalanche current rating (IAS) and 54 mJ EAS withstand capability enable single-pulse fault tolerance without external TVS. |
Use Scenario: 57 V primary-side switch in IEEE 802.3at PoE+ power sourcing equipment (PSE) controller ICs. IC Role / Device Role / Timing Role: Hot-swap MOSFET controlling power delivery to powered devices during classification and startup. Use Value: 1–3 V VGS(th) ensures reliable turn-on from 3.3 V PSE controller outputs, eliminating level-shifter circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 8.0 mΩ @ 10 V; Qg = 24 nC; SO-8 package; no 100% Rg test | Slightly higher switching loss in >600 kHz designs due to +14% Qg | Acceptable where gate drive strength exceeds 1 A peak and layout allows minor thermal margin increase |
| DMN3025LSD-13 | RDS(on) = 2.5 mΩ @ 10 V; dual-N in SO-8; Qg = 12 nC; 30 V rating | Lower voltage rating limits use to ≤24 V systems; dual configuration saves space but increases complexity | Preferred for 12 V automotive DC/DC where ultra-low RDS(on) justifies redesign for 30 V max system voltage |
Compared with IRF7470PBF and DMN3025LSD-13, SI4124DY-T1-E3 offers balanced conduction-switching trade-off at 40 V rating, verified 100% Rg screening for timing consistency, and body diode performance validated for synchronous rectification-making it optimal for 36–48 V industrial and telecom power stages.
Availability
SI4124DY-T1-E3 is available at Aetrix Electronics and suitable for server VRM power stages, industrial DC/DC converters, automotive body control modules, and telecom PoE PSE controllers requiring stable component supply, long-term lifecycle support, and traceable Pb-free sourcing.
Supply support for SI4124DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The SI4124DY-T1-E3 belongs to Vishay's TrenchFET® Gen III power MOSFET family, engineered specifically for high-efficiency, high-frequency DC/DC conversion with emphasis on low Qg, tight RDS(on) distribution, and rugged avalanche performance.
FAQ
What is the maximum continuous drain current rating for SI4124DY-T1-E3 at 70 °C case temperature?
The SI4124DY-T1-E3 supports 16.4 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations under real-world heatsink conditions and must be used in thermal design calculations instead of the 20.5 A rating at TC = 25 °C. The SI4124DY-T1-E3 datasheet confirms this value applies to steady-state operation with proper PCB copper area and airflow.
Does SI4124DY-T1-E3 have a guaranteed avalanche energy rating, and what is its value?
Yes, SI4124DY-T1-E3 has a guaranteed single-pulse avalanche energy rating of 54 mJ, measured with L = 0.1 mH under test conditions defined in the datasheet. This rating is validated across production lots and supports robustness in inductive switching applications such as motor drives and hot-swap circuits. The SI4124DY-T1-E3 specification sheet explicitly lists EAS = 54 mJ in the Absolute Maximum Ratings section.
Can SI4124DY-T1-E3 be driven directly from a 3.3 V microcontroller GPIO without a gate driver?
Yes, SI4124DY-T1-E3 can be driven directly from a 3.3 V GPIO because its gate threshold voltage (VGS(th)) is specified from 1 V to 3 V, ensuring turn-on at 3.3 V with sufficient overdrive. However, due to its 21 nC total gate charge, switching speed will be limited-typical rise/fall times exceed 20 ns with 1 kΩ series resistance. For high-frequency operation (>200 kHz), a dedicated gate driver is recommended. The SI4124DY-T1-E3 transfer characteristics confirm strong ID response at VGS = 3.3 V.
What is the thermal resistance from junction to foot (RthJF) for SI4124DY-T1-E3, and why does it matter?
The SI4124DY-T1-E3 has a maximum junction-to-foot thermal resistance (RthJF) of 22 °C/W, measured from die to the exposed drain paddle. This parameter is critical when the SO-8 package is mounted on a heatsink or thermal pad, as it governs how efficiently heat flows from the silicon to the external thermal mass. Unlike RthJA, RthJF is less dependent on PCB layout and enables more predictable thermal modeling in mechanically attached heatsink configurations. The SI4124DY-T1-E3 datasheet specifies both typical (18 °C/W) and maximum (22 °C/W) values in the Thermal Resistance Ratings table.
Is SI4124DY-T1-E3 suitable for synchronous rectification in a 48 V input buck converter?
Yes, SI4124DY-T1-E3 is suitable for synchronous rectification in 48 V input buck converters, provided the high-side switch blocks ≥48 V and the low-side switch (SI4124DY-T1-E3) operates within its 40 V VDS rating during transient conditions. Its 9.0 mΩ RDS(on) at 4.5 V gate drive and 25–50 ns body diode recovery time reduce conduction and switching losses versus Schottky alternatives. The SI4124DY-T1-E3 application notes confirm use in 36–48 V telecom DC/DC designs with appropriate voltage margining.
SI4124DY-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 20.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.5mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 77 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3540 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 5.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4124DY-T1-E3 FAQ
1.How can I place an order for SI4124DY-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4124DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4124DY-T1-E3 reliable?
The price and inventory of SI4124DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4124DY-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI4124DY-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4124DY-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4124DY-T1-E3?
SI4124DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4124DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4124DY-T1-E3?
For technical support, including SI4124DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4124DY-T1-E3 requirements.
6.How does Aetrix verify that SI4124DY-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI4124DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4124DY-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI4124DY-T1-E3?
All SI4124DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4124DY-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4124DY-T1-E3 part is unused and in its original packaging.
Return procedure for SI4124DY-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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