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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4124DY-T1-GE3

Name: SI4124DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4124DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4124DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4124DY-T1-GE3.pdf

Description:: MOSFET N-CH 40V 20.5A 8SO

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Product details

Overview

SI4124DY-T1-GE3 from Vishay Siliconix is an N-channel 40 V TrenchFET® power MOSFET in SO-8 package, rated for 20.5 A continuous drain current at T_C = 25 °C, with R_DS(on) of 7.5 mΩ at V_GS = 10 V and 9.0 mΩ at V_GS = 4.5 V, optimized for synchronous rectification in high-efficiency DC/DC converters.

For engineers reviewing the SI4124DY-T1-GE3 datasheet, SI4124DY-T1-GE3 pinout, SI4124DY-T1-GE3 application, or SI4124DY-T1-GE3 equivalent, key selection criteria include low gate charge (21 nC typ. at 4.5 V), fast switching (t_d(off) ≤ 50 ns), body diode recovery performance (t_rr = 25–50 ns), thermal resistance (R_thJA = 50 °C/W max), and Pb-free/halogen-free compliance per ordering code.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and high transconductance (g_fs = 55 S typ.), enabling efficient power conversion in compact layouts. Its 100% R_g tested gate resistance (0.75–1.5 Ω) ensures consistent switching timing across production lots.

The device features a robust body diode with V_SD = 0.8–1.2 V at I_S = 10 A and Q_rr = 19–38 nC, supporting high-frequency synchronous rectification without external Schottky replacement. Thermal design is supported by validated junction-to-foot (R_thJF = 22 °C/W max) and junction-to-ambient (R_thJA = 50 °C/W max) metrics.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V and 24 V input DC/DC topologies
R_DS(on) @ 10 V	7.5 mΩ max - Enables <1 W conduction loss at 14 A, critical for high-current output rails
R_DS(on) @ 4.5 V	9.0 mΩ max - Ensures stable operation with 5 V gate drive in logic-level control circuits
Q_g	21 nC typ. @ 4.5 V - Reduces gate driver power demand and enables >1 MHz switching in resonant converters
t_r/t_f	10–15 ns / 8–15 ns @ 10 V - Minimizes switching transition losses and EMI generation
t_rr	25–50 ns - Supports clean zero-voltage switching (ZVS) in phase-shifted full-bridge and LLC designs
R_thJA	50 °C/W max - Defines thermal derating envelope for 1" × 1" FR4 PCB layout without heatsink

Pinout & Package

SI4124DY-T1-GE3 is housed in a standard SO-8 (MS-012) surface-mount package with exposed drain pads for enhanced thermal performance. The package measures 4.9 mm × 6.0 mm × 1.55 mm (D × H × A) and supports reflow soldering per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8	Drain (D) / Source (S) / Gate (G)	Pins 1–3 and 5–8 are parallel-connected Drain terminals; Pin 4 is Gate; Pins 1–3 and 5–8 share common Source connection - provides low-inductance, high-current path for power loop integrity

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × Q_g figure-of-merit (FOM) for minimal conduction + switching loss trade-off
100% R_g tested	Guarantees gate resistance between 0.75–1.5 Ω, ensuring predictable turn-on/turn-off timing across all units
Low Q_rr body diode	19–38 nC reverse recovery charge minimizes shoot-through risk and reduces snubber losses in synchronous rectifiers
Pb-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B, eliminating hazardous substances without compromising reliability
High avalanche energy rating	E_AS = 54 mJ - Withstands transient overvoltage events in unregulated input stages without failure

Applications

Server VRM Output Stage	Industrial DC/DC Converter
Use Scenario: High-current, multiphase buck converter delivering 50–100 A at 0.8–1.2 V to CPU/GPU cores. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–600 kHz with 5 V gate drive. Use Value: 7.5 mΩ R_DS(on) limits conduction loss to <0.5 W per phase at 14 A, while 21 nC Q_g enables precise PWM timing control.	Use Scenario: 24 V input to 5 V/12 V isolated DC/DC module for PLC I/O modules and sensor interfaces. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp flyback topology. Use Value: 25–50 ns t_rr and 0.8–1.2 V V_SD reduce body diode conduction loss by >40% vs. standard Schottky diodes.
Automotive ADAS Power Supply	Telecom Point-of-Load Regulator
Use Scenario: 12 V battery-fed 3.3 V/5 V supply for radar processing units requiring AEC-Q101 stress qualification. IC Role / Device Role / Timing Role: High-efficiency buck converter switch with integrated thermal monitoring via case temperature sensing. Use Value: R_thJF = 22 °C/W max enables direct thermal coupling to metal-core PCB, maintaining T_J < 125 °C under 15 A load.	Use Scenario: 48 V telecom rectifier feeding 12 V intermediate bus with >95% efficiency target. IC Role / Device Role / Timing Role: Primary-side high-side switch in half-bridge configuration with 100 ns dead-time margin. Use Value: 40 V V_DS rating accommodates 48 V transient surges up to 60 V, while 50 A I_DM handles peak inrush currents.

Server VRM Output Stage

Industrial DC/DC Converter

Use Scenario: High-current, multiphase buck converter delivering 50–100 A at 0.8–1.2 V to CPU/GPU cores.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–600 kHz with 5 V gate drive.

Use Value: 7.5 mΩ R_DS(on) limits conduction loss to <0.5 W per phase at 14 A, while 21 nC Q_g enables precise PWM timing control.

Use Scenario: 24 V input to 5 V/12 V isolated DC/DC module for PLC I/O modules and sensor interfaces.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp flyback topology.

Use Value: 25–50 ns t_rr and 0.8–1.2 V V_SD reduce body diode conduction loss by >40% vs. standard Schottky diodes.

Automotive ADAS Power Supply

Telecom Point-of-Load Regulator

Use Scenario: 12 V battery-fed 3.3 V/5 V supply for radar processing units requiring AEC-Q101 stress qualification.

IC Role / Device Role / Timing Role: High-efficiency buck converter switch with integrated thermal monitoring via case temperature sensing.

Use Value: R_thJF = 22 °C/W max enables direct thermal coupling to metal-core PCB, maintaining T_J < 125 °C under 15 A load.

Use Scenario: 48 V telecom rectifier feeding 12 V intermediate bus with >95% efficiency target.

IC Role / Device Role / Timing Role: Primary-side high-side switch in half-bridge configuration with 100 ns dead-time margin.

Use Value: 40 V V_DS rating accommodates 48 V transient surges up to 60 V, while 50 A I_DM handles peak inrush currents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 8.0 mΩ @ 10 V; Q_g = 24 nC; SO-8 package	Higher gate charge increases driver loss; slightly higher R_DS(on) raises conduction loss at >12 A	Acceptable where gate drive capability exceeds 1 A peak and thermal margin allows 0.5 °C/W higher R_thJA
NTMFS4C09N	R_DS(on) = 7.0 mΩ @ 10 V; Q_g = 20 nC; PowerSO-8 package with enhanced thermal pad	Lower R_DS(on) improves efficiency but requires modified footprint; not drop-in compatible due to different thermal pad geometry	Preferred for new designs targeting <0.4 W conduction loss at 15 A, provided PCB layout supports larger thermal pad

Compared with IRF7470PBF and NTMFS4C09N, SI4124DY-T1-GE3 offers balanced FOM (R_DS(on) × Q_g) and proven compatibility with legacy SO-8 footprints, making it optimal for cost-sensitive industrial upgrades where board rework is constrained.

Availability

SI4124DY-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and automotive ADAS power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SI4124DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI4124DY-T1-GE3 belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-current, high-frequency synchronous rectification in space-constrained power systems.

FAQ

What is the maximum continuous drain current rating for SI4124DY-T1-GE3 at 70 °C case temperature?

The SI4124DY-T1-GE3 supports 16.4 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations under sustained high-temperature operation and must be verified against actual PCB thermal design using R_thJC = 18–22 °C/W.

Does SI4124DY-T1-GE3 support logic-level gate drive?

Yes, SI4124DY-T1-GE3 is fully logic-level compatible: its R_DS(on) is guaranteed at 9.0 mΩ max with V_GS = 4.5 V, and V_GS(th) ranges from 1.0 V to 3.0 V, enabling reliable turn-on with standard 5 V microcontroller or gate driver outputs.

What is the body diode reverse recovery time (t_rr) of SI4124DY-T1-GE3, and how does it impact synchronous rectifier performance?

The SI4124DY-T1-GE3 exhibits t_rr = 25–50 ns under I_F = 10 A and di/dt = 100 A/μs conditions. This fast recovery minimizes reverse conduction loss and reduces voltage overshoot during commutation, directly improving efficiency in high-frequency synchronous rectifier applications like LLC resonant converters.

Is SI4124DY-T1-GE3 qualified for automotive applications?

SI4124DY-T1-GE3 is not AEC-Q101 qualified per official Vishay documentation. While it operates across –55 °C to +150 °C and meets industrial reliability standards, automotive-grade use requires explicit AEC-Q101 certification - consider Vishay's AEC-Q101-qualified alternatives such as SQ4124EY for safety-critical vehicle systems.

How does the thermal resistance R_thJA of SI4124DY-T1-GE3 vary with PCB copper area?

The datasheet specifies R_thJA = 50 °C/W maximum for a 1" × 1" FR4 board (1 oz Cu). Increasing copper area to 2" × 2" with internal ground planes can reduce R_thJA to ~35 °C/W; however, SI4124DY-T1-GE3's R_thJF = 22 °C/W (junction-to-foot) remains the dominant thermal path, so optimizing drain pad copper and solder stencil thickness yields greater improvement than ambient-area expansion.

SI4124DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 20.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 77 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3540 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 5.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4124DY-T1-GE3 FAQ

1.How can I place an order for SI4124DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4124DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4124DY-T1-GE3 reliable?

The price and inventory of SI4124DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4124DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4124DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4124DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4124DY-T1-GE3?

SI4124DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4124DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4124DY-T1-GE3?

For technical support, including SI4124DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4124DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4124DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4124DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4124DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4124DY-T1-GE3?

All SI4124DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4124DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4124DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4124DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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