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Vishay Siliconix SI4134DY-T1-E3
- Part No.:
- SI4134DY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4134DY-T1-E3.pdf
- Description:
- MOSFET N-CH 30V 14A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,214
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Product details
Overview
SI4134DY-T1-E3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® power MOSFET in SO-8 package, delivering 14 A continuous drain current at TC = 25 °C, 0.0140 Ω RDS(on) at VGS = 10 V, and 7.3 nC total gate charge - optimized for high-efficiency DC/DC conversion in notebook system power rails.
For engineers reviewing the SI4134DY-T1-E3 datasheet, SI4134DY-T1-E3 pinout, SI4134DY-T1-E3 application, or SI4134DY-T1-E3 equivalent, key selection criteria include its 30 V VDS rating, low RDS(on) at 4.5 V gate drive, 100 % Rg and UIS tested reliability, and SO-8 thermal performance with RthJA up to 50 °C/W.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. It supports gate drive voltages from 4.5 V to 10 V, exhibits 72 pF Crss and 15.4 nC Qg (typ.) under 15 V VDS conditions, and integrates a body diode with 0.78 V forward voltage at 3 A and 17 ns reverse recovery time.
Designed for synchronous buck converters and load switches, it operates across -55 °C to +150 °C junction temperature range, with absolute maximum ratings including ±20 V VGS, 50 A pulsed drain current, and 11.25 mJ single-pulse avalanche energy - enabling robust operation in transient-heavy power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - defines maximum blocking voltage in high-side or low-side switch configurations |
| RDS(on) MAX | 0.0140 Ω at VGS = 10 V - enables <140 mW conduction loss at 10 A, critical for thermally constrained notebook PCBs |
| ID CONTINUOUS | 14 A at TC = 25 °C - supports high-current CPU/GPU VRM phases without external heatsinking |
| Qg TYP | 7.3 nC at VGS = 4.5 V - reduces gate driver power demand and switching losses in 5 V-controlled systems |
| VGS(th) | 1.2–2.5 V - ensures reliable turn-on with standard logic-level controllers and avoids false triggering |
| RthJA MAX | 50 °C/W - sets thermal design margin for 2.5 W max power dissipation on standard FR4 board |
| Body Diode VSD | 0.78 V at IS = 3 A - lowers freewheeling loss during synchronous rectification dead-time intervals |
Pinout & Package
SO-8 (Narrow) package per JEDEC MS-012, 5.00 mm × 4.00 mm footprint, 1.75 mm max height, with exposed drain pad for thermal enhancement. Pin 1–3 and 5–8 are source terminals (S), Pin 4 is gate (G), and Pins 1–3/5–8 connect internally to drain (D) - confirmed by top-view marking and Vishay S15-2154 Rev. D layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5, 6, 7, 8 | Source (S) / Drain (D) | Pins 1–3 and 5–8 are source leads; all eight pins tie to internal drain via exposed pad - dual-function layout enables low-inductance source return and efficient heat spreading |
| 4 | Gate (G) | Single control input requiring ≤1 Ω series resistance to damp ringing; compatible with 3.3 V/5 V PWM controllers |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® construction | Enables 0.0115 Ω RDS(on) typ. at 10 A/10 V - reduces I²R losses by >30 % vs. planar MOSFETs in same package |
| 100 % Rg and UIS tested | Guarantees gate robustness against ESD and unclamped inductive switching stress - eliminates field failures in DC/DC power stage transients |
| Low Crss (72 pF) | Minimizes Miller effect-induced shoot-through risk in high-frequency synchronous buck designs (>500 kHz) |
| Body diode trr = 17 ns | Reduces reverse recovery loss and EMI generation during hard commutation in non-synchronous topologies |
| Lead (Pb)-free, RoHS-compliant | Meets IPC-J-STD-609A Class 2 material categorization - suitable for consumer electronics manufacturing without exemption requests |
Applications
| Notebook CPU Voltage Regulator | USB-C PD Power Path Switch |
|---|---|
Use Scenario: High-current, space-constrained VRM phase in ultrabook platforms requiring <1 mm profile and 12–20 A load steps. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 300–600 kHz buck converter, driven by integrated controller with 4.5 V gate output. Use Value: 0.0145 Ω RDS(on) at 4.5 V enables >95 % efficiency at 15 A, while SO-8 thermal resistance supports 2.5 W dissipation without thermal vias. | Use Scenario: Input power path switch in portable USB-C PD sink devices managing 20 V/3 A input with overcurrent protection. IC Role / Device Role / Timing Role: Hot-swap MOSFET controlling 20 V rail entry, configured as low-side switch with fast turn-off (<30 ns fall time) for fault isolation. Use Value: 50 A pulsed drain rating and 15 A continuous capability handle 3× overload surges; 0.78 V body diode limits reverse-bias leakage during adapter disconnect. |
| Industrial 24 V DC/DC Converter | Automotive Infotainment PMIC Output Stage |
Use Scenario: Secondary-side synchronous rectifier in isolated 24 V to 5 V flyback or LLC converter for factory automation I/O modules. IC Role / Device Role / Timing Role: Self-driven synchronous rectifier leveraging transformer secondary voltage, requiring low VGS(th) and stable RDS(on) over -40 to +125 °C. Use Value: VGS(th) of 1.2–2.5 V ensures turn-on across full temperature range; 0.0175 Ω RDS(on) at 4.5 V maintains <1 W loss at 7.5 A load. | Use Scenario: Load switch for 5 V auxiliary rail powering display backlight drivers and audio codecs in automotive head units. IC Role / Device Role / Timing Role: Controlled high-side switch (with external level shifter) enabling soft-start, inrush limiting, and thermal foldback via gate monitoring. Use Value: 11.25 mJ EAS rating withstands load dump transients; -55 to +150 °C TJ range meets AEC-Q101 ambient requirements when derated. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si4435DY-T1-E3 | 30 V VDS, 0.0085 Ω RDS(on) at 10 V, but higher Qg (22 nC) and larger SO-8 footprint (5.0 × 6.0 mm) | Better conduction loss at high current, but slower switching and incompatible pad layout | Select when thermal budget allows larger package and lower RDS(on) outweighs gate drive complexity |
| IRF7470PBF | 30 V VDS, 0.012 Ω RDS(on) at 10 V, SO-8, but no 100 % UIS test and higher RthJA (62 °C/W) | Lower cost, but reduced ruggedness and thermal margin in sustained 10 A operation | Select for cost-sensitive industrial DC/DC where transient stress is minimal and board area is constrained |
Compared with Si4435DY-T1-E3 and IRF7470PBF, SI4134DY-T1-E3 offers optimal balance of low gate charge (7.3 nC), verified UIS robustness, and SO-8 thermal performance - making it preferred for compact, high-reliability notebook and USB-C power delivery designs where gate drive efficiency and transient immunity are critical.
Availability
SI4134DY-T1-E3 is available at Aetrix Electronics and suitable for notebook system power, USB-C PD power path switching, and industrial 24 V DC/DC conversion requiring stable component supply and lead-free compliance.
Supply support for SI4134DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.
The SI4134DY-T1-E3 belongs to Vishay's TrenchFET® Gen III N-channel MOSFET product line, engineered specifically for high-frequency, high-current DC/DC conversion in space- and thermal-constrained portable electronics.
FAQ
What is the maximum continuous drain current rating for SI4134DY-T1-E3 at 70 °C case temperature?
The SI4134DY-T1-E3 supports 11.2 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package without additional heatsinking, and aligns with its 3.2 W maximum power dissipation at that temperature. Engineers must verify board layout and airflow to sustain this current in real-world SI4134DY-T1-E3 deployments.
Does SI4134DY-T1-E3 support 3.3 V gate drive for full enhancement?
No - SI4134DY-T1-E3 is not fully enhanced at 3.3 V gate drive. Its RDS(on) is specified at VGS = 4.5 V (0.0175 Ω max) and VGS = 10 V (0.0140 Ω max); at 3.3 V, VGS(th) minimum of 1.2 V is exceeded but conduction is highly resistive and undefined in datasheet. For reliable operation, SI4134DY-T1-E3 requires ≥4.5 V gate drive, such as from a dedicated gate driver or 5 V controller output.
What is the body diode reverse recovery charge (Qrr) of SI4134DY-T1-E3, and why does it matter?
The SI4134DY-T1-E3 has a body diode reverse recovery charge (Qrr) of 9.5 nC (typ.) and 19 nC (max), measured at TJ = 25 °C with IF = 10 A and dI/dt = 100 A/μs. This parameter directly impacts switching loss and EMI in non-synchronous or pseudo-synchronous converters - lower Qrr reduces voltage spikes and cross-conduction risk during freewheeling transitions, making SI4134DY-T1-E3 suitable for medium-frequency DC/DC designs.
Is SI4134DY-T1-E3 qualified for automotive applications per AEC-Q101?
No - SI4134DY-T1-E3 is not AEC-Q101 qualified. While its -55 °C to +150 °C operating junction temperature range overlaps with automotive requirements, Vishay documentation confirms it is intended for commercial and industrial use only. For automotive infotainment or body control modules, engineers should select AEC-Q101-qualified alternatives like SQJQ412E or SIHFU320, not SI4134DY-T1-E3.
How does the 100 % UIS testing benefit SI4134DY-T1-E3 in DC/DC converter applications?
The 100 % unclamped inductive switching (UIS) testing ensures every SI4134DY-T1-E3 unit can safely absorb 11.25 mJ of avalanche energy without failure - critical for surviving output short-circuits, inductor saturation, or controller timing faults in DC/DC converters. This built-in ruggedness eliminates need for external snubbers in notebook VRMs and improves field reliability versus non-tested MOSFETs, directly enhancing SI4134DY-T1-E3 system robustness.
SI4134DY-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 846 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4134DY-T1-E3 FAQ
1.How can I place an order for SI4134DY-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4134DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4134DY-T1-E3 reliable?
The price and inventory of SI4134DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4134DY-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI4134DY-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4134DY-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4134DY-T1-E3?
SI4134DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4134DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4134DY-T1-E3?
For technical support, including SI4134DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4134DY-T1-E3 requirements.
6.How does Aetrix verify that SI4134DY-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI4134DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4134DY-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI4134DY-T1-E3?
All SI4134DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4134DY-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4134DY-T1-E3 part is unused and in its original packaging.
Return procedure for SI4134DY-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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