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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4153DY-T1-GE3

Name: SI4153DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4153DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4153DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4153DY-T1-GE3.pdf

Description:: P-CHANNEL 30-V (D-S) MOSFET SO-8

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Product details

Overview

SI4153DY-T1-GE3 from Vishay Siliconix is a P-channel 30 V TrenchFET® Gen III power MOSFET in SO-8 package, delivering R_DS(on) = 9.5 mΩ at V_GS = −10 V and 15 mΩ at V_GS = −4.5 V, with 31 nC total gate charge and −19.3 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency load switch in DC power management circuits.

For engineers reviewing the SI4153DY-T1-GE3 datasheet, SI4153DY-T1-GE3 pinout, SI4153DY-T1-GE3 application, or SI4153DY-T1-GE3 equivalent, key selection criteria include its low R_DS(on) at logic-level gate drive, robust avalanche energy rating (11.25 mJ), and SO-8 thermal performance under PCB-constrained layouts.

Technical Context

This MOSFET uses trench-based silicon architecture optimized for low on-resistance and fast switching in high-side or reverse-polarity protection configurations. Its gate threshold voltage range (−1 V to −2.5 V) ensures reliable turn-on with standard 3.3 V or 5 V logic controllers, while the body diode exhibits t_rr = 30–60 ns and Q_rr = 11–22 nC for moderate-frequency synchronous rectification support.

The device features 100% R_g testing for gate resistance consistency (0.5–3.5 Ω), and thermal design is enabled by validated R_thJA = 34–40 °C/W (t ≤ 10 s) and R_thJF = 18–22 °C/W (steady-state), supporting operation up to +150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−30 V - Supports 24 V rail systems with 20 % margin against transients
R_DS(on) @ V_GS = −10 V	9.5 mΩ max - Enables <1.0 W conduction loss at 10 A continuous load
R_DS(on) @ V_GS = −4.5 V	15 mΩ max - Compatible with 3.3 V GPIO control without level-shifting
Q_g	31 nC typ. - Allows efficient 1 MHz switching with <1 W gate driver power
I_D (continuous)	−19.3 A @ T_C = 25 °C - Sustains high-current loads with minimal heatsinking
E_AS	11.25 mJ - Withstands single inductive energy spikes in adapter and load-switch applications
V_GS(th)	−1 to −2.5 V - Ensures predictable turn-on across temperature and process variation

Pinout & Package

SI4153DY-T1-GE3 is housed in a surface-mount SO-8 package with exposed drain pad for enhanced thermal dissipation. The package supports standard reflow profiles and is lead (Pb)-free and halogen-free per Vishay's material categorization.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 8	Source (S)	Common source connection; pins 1/2/3/8 internally bonded to reduce source inductance
4	Gate (G)	Control input; requires <3.5 Ω series resistance to damp ringing during fast switching
5, 6, 7	Drain (D)	Main power path; pins 5/6/7 and exposed pad form low-inductance, high-current drain node

Key Features

Feature	Design Value
TrenchFET® Gen III technology	Delivers 25 % lower R_DS(on) vs. prior generation at same V_DS, improving power density
100 % R_g tested	Ensures gate resistance within 0.5–3.5 Ω, critical for consistent switching timing and EMI control
Low Q_gd/Q_gs ratio	Q_gd = 10.8 nC, Q_gs = 9.2 nC - Reduces Miller effect, enabling stable hard-switching above 500 kHz
Body diode with t_rr = 30–60 ns	Supports non-synchronous flyback or buck converter topologies with predictable recovery behavior
−55 to +150 °C operating range	Validated for industrial and automotive under-hood environments without derating below −40 °C

Applications

Adaptor Switch	Power Management
Use Scenario: USB-C PD adapter output stage switching between multiple voltage rails. IC Role / Device Role / Timing Role: High-side P-channel load switch controlling 5–20 V output delivery. Use Value: Low 9.5 mΩ R_DS(on) minimizes dropout and thermal rise at 10–15 A loads, extending adapter lifetime.	Use Scenario: System-level power sequencing in industrial PLC I/O modules. IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch upstream of LDOs and microcontrollers. Use Value: −30 V V_DS rating and 11.25 mJ E_AS withstand accidental short-circuit events without latch-up.
Load Switch	Hot-Swap Circuit
Use Scenario: Controlled power enable for FPGA or ASIC core rails in telecom line cards. IC Role / Device Role / Timing Role: Inrush-limited main power switch with integrated body diode for back-bias blocking. Use Value: Gate threshold (−1 to −2.5 V) allows direct drive from 3.3 V sequencer outputs, eliminating external level shifters.	Use Scenario: Hot-plug insertion detection and power ramp control in server backplanes. IC Role / Device Role / Timing Role: High-side disconnect switch with controlled slew rate via gate resistor tuning. Use Value: Predictable 50–100 ns turn-on delay at −4.5 V drive enables precise timing alignment with system reset signals.

Adaptor Switch

Power Management

Use Scenario: USB-C PD adapter output stage switching between multiple voltage rails.

IC Role / Device Role / Timing Role: High-side P-channel load switch controlling 5–20 V output delivery.

Use Value: Low 9.5 mΩ R_DS(on) minimizes dropout and thermal rise at 10–15 A loads, extending adapter lifetime.

Use Scenario: System-level power sequencing in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch upstream of LDOs and microcontrollers.

Use Value: −30 V V_DS rating and 11.25 mJ E_AS withstand accidental short-circuit events without latch-up.

Load Switch

Hot-Swap Circuit

Use Scenario: Controlled power enable for FPGA or ASIC core rails in telecom line cards.

IC Role / Device Role / Timing Role: Inrush-limited main power switch with integrated body diode for back-bias blocking.

Use Value: Gate threshold (−1 to −2.5 V) allows direct drive from 3.3 V sequencer outputs, eliminating external level shifters.

Use Scenario: Hot-plug insertion detection and power ramp control in server backplanes.

IC Role / Device Role / Timing Role: High-side disconnect switch with controlled slew rate via gate resistor tuning.

Use Value: Predictable 50–100 ns turn-on delay at −4.5 V drive enables precise timing alignment with system reset signals.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7425PBF	R_DS(on) = 11 mΩ @ −10 V; higher Q_g = 42 nC; TO-252 package	Larger footprint and higher thermal resistance (R_thJA ≈ 62 °C/W); less suitable for dense SO-8 layouts	Choose when board space permits DPAK and higher avalanche margin (E_AS = 22 mJ) is required.
DMG2305UVT-7	R_DS(on) = 42 mΩ @ −4.5 V; smaller SOT-23 package; lower I_D = −4.2 A	Not rated for >5 A continuous loads; unsuitable for adaptor or hot-swap use cases	Select only for low-current bias or enable functions where SO-8 thermal capacity is unnecessary.

Compared with IRF7425PBF and DMG2305UVT-7, SI4153DY-T1-GE3 provides optimal balance of low R_DS(on), logic-level drive compatibility, SO-8 thermal performance, and avalanche ruggedness for mid-power industrial load switching-without requiring layout changes or additional gate drivers.

Availability

SI4153DY-T1-GE3 is available at Aetrix Electronics and suitable for adaptor switch, power management, and load switch applications requiring stable component supply, long-term manufacturability, and RoHS-compliant sourcing.

Supply support for SI4153DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and application-specific optimization.

The SI4153DY-T1-GE3 belongs to Vishay's TrenchFET® Gen III P-channel MOSFET product line, engineered for high-efficiency DC power control in space-constrained industrial and computing systems where logic-level gate drive and avalanche robustness are essential.

FAQ

What is the maximum continuous drain current for SI4153DY-T1-GE3 at 70 °C case temperature?

The SI4153DY-T1-GE3 supports −15.4 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat transfer efficiency at elevated case temperatures and must be verified against actual PCB copper area and airflow conditions in the final design. SI4153DY-T1-GE3 maintains safe operation within its −55 to +150 °C junction temperature range under these conditions.

Does SI4153DY-T1-GE3 support 3.3 V logic-level gate drive?

Yes, SI4153DY-T1-GE3 is fully compatible with 3.3 V logic-level gate drive: its V_GS(th) range is −1 V to −2.5 V, and R_DS(on) is guaranteed at 15 mΩ max with V_GS = −4.5 V. At 3.3 V controller output, a negative gate drive circuit (e.g., inverting buffer or charge pump) is required to achieve sufficient |V_GS|; direct 3.3 V positive drive cannot turn on this P-channel device. SI4153DY-T1-GE3 thus enables compact, low-component-count load switches in 3.3 V system domains.

What is the thermal resistance from junction to ambient for SI4153DY-T1-GE3 under transient conditions?

For pulse durations ≤10 s, SI4153DY-T1-GE3 has a maximum junction-to-ambient thermal resistance (R_thJA) of 40 °C/W, with typical value 34 °C/W, measured on a 1" × 1" FR4 board. This rating assumes standard surface-mount assembly and no added heatsink. For longer-duration or DC operation, steady-state R_thJA must be determined from the derating curve in Figure 13 of the datasheet. SI4153DY-T1-GE3's exposed drain pad enhances thermal coupling to PCB copper planes.

Can SI4153DY-T1-GE3 be used in synchronous rectification?

SI4153DY-T1-GE3 is not recommended for synchronous rectification due to its relatively high Q_rr (11–22 nC) and t_rr (30–60 ns), which increase switching losses and EMI in high-frequency (>500 kHz) flyback or LLC topologies. Its body diode is optimized for freewheeling and protection-not fast recovery. For synchronous rectification, N-channel devices with dedicated low-Q_rr designs (e.g., SiR872DP) are preferred. SI4153DY-T1-GE3 remains ideal for unidirectional load switching and polarity protection where body diode conduction is infrequent or brief.

Is SI4153DY-T1-GE3 halogen-free and RoHS-compliant?

Yes, SI4153DY-T1-GE3 is both halogen-free and RoHS-compliant, as confirmed in the Ordering Information section and Material Categorization note (www.vishay.com/doc?99912). The "-GE3" suffix explicitly denotes lead (Pb)-free and halogen-free construction per JEDEC J-STD-609. All plating, molding compounds, and die attach materials meet EU RoHS Directive 2011/65/EU and IEC 61249-2-21 requirements. SI4153DY-T1-GE3 supports environmentally regulated industrial and consumer deployments without compliance risk.

SI4153DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen III

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14.3A (Ta), 19.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 93 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 3600 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 5.6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4153DY-T1-GE3 FAQ

1.How can I place an order for SI4153DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4153DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4153DY-T1-GE3 reliable?

The price and inventory of SI4153DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4153DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4153DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4153DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4153DY-T1-GE3?

SI4153DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4153DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4153DY-T1-GE3?

For technical support, including SI4153DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4153DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4153DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4153DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4153DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4153DY-T1-GE3?

All SI4153DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4153DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4153DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4153DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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