My Inquiry
My Account
Vishay Siliconix SI4155DY-T1-GE3
- Part No.:
- SI4155DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4155DY-T1-GE3.pdf
- Description:
- P-CHANNEL 30-V (D-S) MOSFET SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,554
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI4155DY-T1-GE3 from Vishay Siliconix is a P-channel 30 V (D-S) TrenchFET® power MOSFET in SO-8 package, rated for -13.6 A continuous drain current at TC = 25 °C, with RDS(on) of 0.0150 Ω at VGS = -10 V and 0.0260 Ω at VGS = -4.5 V, used as load switch and battery management switch in mobile computing power rails.
For engineers reviewing the SI4155DY-T1-GE3 datasheet, SI4155DY-T1-GE3 pinout, SI4155DY-T1-GE3 application, or SI4155DY-T1-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance values, gate charge behavior, body diode characteristics, and SO-8 terminal mapping - all confirmed from Vishay's official S22-0013-Rev. A datasheet.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low RDS(on) and fast switching with controlled Qg (16 nC typ. at VGS = -4.5 V). Its negative threshold voltage (-1.2 V to -2.5 V) enables direct logic-level drive from 3.3 V or 5 V controllers without level shifting.
The device integrates a robust body diode with trr = 21–32 ns and Qrr = 12–20 nC, supporting synchronous rectification and reverse recovery in DC-DC converters. Thermal design is supported by RthJC = 22–28 °C/W and RthJA = 38–50 °C/W on FR4 board.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for high-side switch applications in ≤30 V systems. |
| RDS(on) @ VGS = -10 V | 0.0150 Ω - Enables <15 mΩ conduction loss at full-rated current, critical for efficiency in notebook adapter switches. |
| RDS(on) @ VGS = -4.5 V | 0.0260 Ω - Confirmed operation with 4.5 V gate drive, suitable for battery-powered 5 V rail control. |
| Qg | 16 nC (typ. at VGS = -4.5 V) - Low gate charge supports high-frequency PWM switching up to ~1 MHz with minimal driver loss. |
| ID (continuous) | -13.6 A at TC = 25 °C - Package-limited current rating defining maximum steady-state load capability with heatsinking. |
| VGS(th) | -1.2 V to -2.5 V - Negative threshold ensures reliable turn-on with standard logic outputs and avoids unintended conduction during power-up. |
| trr / Qrr | 21–32 ns / 12–20 nC - Fast, low-charge body diode enables use in buck converter freewheeling paths without external Schottky. |
Pinout & Package
SO-8 (narrow-body, JEDEC MS-012), surface-mount package with exposed drain pad (pins 4, 5, 6, 7 connected internally to drain); dimensions per Vishay Doc. 71192: 4.9 mm × 3.9 mm × 1.55 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 8 | Source (S) | Common source node; pins 1/2/3/8 are internally bonded together for low-inductance, high-current return path. |
| 4, 5, 6, 7 | Drain (D) | High-current output node; pins 4–7 share internal drain connection and thermal pad for enhanced power dissipation. |
| 4 | Gate (G) | Control input; pin 4 is dedicated gate terminal - isolated from drain/source, enabling standard gate driver interface. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® construction | Enables ultra-low RDS(on) and high cell density in SO-8 footprint, reducing board area vs. discrete alternatives. |
| 100 % Rg and UIS tested | Guarantees gate resistance consistency (0.64–6.4 Ω) and ruggedness against unclamped inductive switching stress. |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per Doc. 99912. |
| Low Qgd / Qgs ratio | Qgd ≈ 5.5 nC, Qgs ≈ 5.6 nC - Near-unity Miller-to-input charge ratio improves switching controllability and EMI performance. |
Applications
| Notebook Adaptor Switch | Battery Protection Circuit |
|---|---|
|
Use Scenario: High-side power switch controlling 12–20 V input to notebook mainboard DC-DC stages. IC Role / Device Role / Timing Role: P-channel high-side load switch enabling hot-swap and inrush control. Use Value: RDS(on) ≤ 0.026 Ω at 4.5 V gate drive ensures <300 mW conduction loss at 10 A, minimizing thermal impact in compact adapters. |
Use Scenario: Reverse-polarity and overcurrent protection between Li-ion battery pack and system load. IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET for bidirectional blocking and fast shutdown. Use Value: -30 V VDS rating and -14 A avalanche current (IAS) withstand accidental reverse connection and transient surges. |
| USB-C Power Delivery Load Switch | Industrial 24 V Rail Sequencing |
|
Use Scenario: In-line power switch for 5–20 V USB-C PD output rails, supporting programmable voltage negotiation. IC Role / Device Role / Timing Role: Controlled enable/disable of downstream power domain with soft-start via gate RC. Use Value: 16 nC Qg allows clean, sub-100 μs turn-on using low-cost 10 kΩ/1 nF RC network - no active driver needed. |
Use Scenario: Staged power-up of multiple 24 V subsystems (I/O, sensors, comms) in PLC or HMI controller. IC Role / Device Role / Timing Role: Voltage-rail sequencer element triggered by microcontroller GPIO. Use Value: -1.2 V to -2.5 V VGS(th) ensures reliable turn-on from 3.3 V MCU outputs, eliminating level-shifter components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 0.0135 Ω @ -10 V but higher Qg = 22 nC; SO-8 package, same pinout. | Better conduction loss at high gate drive, but slower switching and higher driver loss at 4.5 V. | Prefer when system prioritizes efficiency over switching frequency; verify gate driver capability for 22 nC. |
| IRF7424TRPBF | RDS(on) = 0.022 Ω @ -4.5 V; TO-252 package, not SO-8 - requires PCB redesign. | Higher RDS(on) than SI4155DY-T1-GE3 at 4.5 V, but higher ID rating (-15 A) and better thermal RthJC = 2.5 °C/W. | Select only if board layout allows DPAK and thermal budget demands lower junction rise per watt. |
Compared with Si7157DP-T1-GE3 and IRF7424TRPBF, the SI4155DY-T1-GE3 offers optimal balance of low 4.5 V RDS(on), moderate Qg, and SO-8 compatibility - making it ideal for space-constrained, logic-driven load switching where gate drive voltage is limited to 4.5 V.
Availability
SI4155DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook power management, USB-C PD load switching, and industrial 24 V rail sequencing requiring stable component supply and long-term production continuity.
Supply support for SI4155DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The SI4155DY-T1-GE3 belongs to Vishay's TrenchFET® Gen III P-channel MOSFET family, engineered for high-efficiency, logic-level-switched power control in portable and industrial power systems.
FAQ
What is the maximum continuous drain current for SI4155DY-T1-GE3 at 70 °C case temperature?
The SI4155DY-T1-GE3 supports -10.9 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package under sustained power dissipation; actual usable current depends on PCB copper area and ambient conditions. The SI4155DY-T1-GE3 datasheet confirms this value under steady-state conditions with proper heatsinking.
Does SI4155DY-T1-GE3 have a guaranteed avalanche rating?
Yes, the SI4155DY-T1-GE3 is rated for single-pulse avalanche energy (EAS) of 9.8 mJ and avalanche current (IAS) of -14 A with L = 0.1 mH, per Vishay's S22-0013-Rev. A datasheet. These values are production-tested and ensure robustness against inductive switching transients in real-world load-switch applications - a key differentiator for the SI4155DY-T1-GE3 in unprotected power rails.
Can SI4155DY-T1-GE3 be driven directly from a 3.3 V microcontroller GPIO?
No - the SI4155DY-T1-GE3 has a VGS(th) range of -1.2 V to -2.5 V, meaning it requires a negative gate-source voltage to turn on. A 3.3 V GPIO alone cannot produce the required negative bias; it must be paired with an inverting driver or charge pump. The SI4155DY-T1-GE3 is designed for 4.5 V or 10 V negative gate drive, not 3.3 V logic-level direct drive.
What is the thermal resistance from junction to case (RthJC) for SI4155DY-T1-GE3?
The SI4155DY-T1-GE3 has a maximum RthJC of 28 °C/W and typical value of 22 °C/W, measured from junction to the drain pad (pins 4–7). This parameter is critical for calculating junction temperature rise under power dissipation and confirms the SO-8 package's suitability for thermally demanding load-switch roles. The SI4155DY-T1-GE3 thermal data is validated per JEDEC JESD51 standards.
Is SI4155DY-T1-GE3 compliant with RoHS and halogen-free requirements?
Yes, the SI4155DY-T1-GE3 is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and Vishay's material compliance standard documented in www.vishay.com/doc?99912. The "-GE3" suffix explicitly denotes Green (halogen-free) packaging, and the device carries Vishay's full material declaration - a verified attribute of the SI4155DY-T1-GE3 part number.
SI4155DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.2A (Ta), 13.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1870 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 4.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4155DY-T1-GE3 FAQ
1.How can I place an order for SI4155DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4155DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4155DY-T1-GE3 reliable?
The price and inventory of SI4155DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4155DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4155DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4155DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4155DY-T1-GE3?
SI4155DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4155DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4155DY-T1-GE3?
For technical support, including SI4155DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4155DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4155DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4155DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4155DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4155DY-T1-GE3?
All SI4155DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4155DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4155DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4155DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI4155DY-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
