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Vishay Siliconix SI4158DY-T1-GE3
- Part No.:
- SI4158DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4158DY-T1-GE3.pdf
- Description:
- MOSFET N-CH 20V 36.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,362
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Product details
Overview
SI4158DY-T1-GE3 from Vishay Siliconix is an N-channel 20-V TrenchFET® Power MOSFET in SO-8 package, rated for 36.5 A continuous drain current at TC = 25 °C, with RDS(on) of 2.5 mΩ at VGS = 10 V and 3.0 mΩ at VGS = 4.5 V, optimized for low-side synchronous buck converter switching and OR-ing applications.
For engineers reviewing the SI4158DY-T1-GE3 datasheet, SI4158DY-T1-GE3 pinout, SI4158DY-T1-GE3 application, or SI4158DY-T1-GE3 equivalent, key selection criteria include its 20-V VDS rating, sub-3-mΩ on-resistance at 4.5-V drive, 40-nC total gate charge, SO-8 thermal performance (RthJA ≤ 42 °C/W), and 100% UIS-tested ruggedness for high-reliability power stages.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low RDS(on) and fast switching with controlled Qg (40 nC typ. at VGS = 4.5 V). Its gate threshold voltage (1.0–2.1 V) enables compatibility with 3.3-V and 5-V logic-level drivers, while the integrated body diode supports bidirectional current flow in OR-ing configurations.
The device is characterized for operation from –55 °C to +150 °C junction temperature, with thermal resistance RthJF = 16 °C/W (typ.) to the drain foot-critical for PCB copper pour thermal management-and features 100% Rg testing and 100% UIS validation per JEDEC JESD22-A115A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum blocking voltage for 24-V rail and PoE-powered systems |
| RDS(on) | 2.5 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 20 A in high-current DC/DC stages |
| RDS(on) | 3.0 mΩ @ VGS = 4.5 V - Supports direct drive from standard 5-V microcontroller GPIOs |
| Qg | 40 nC @ VGS = 4.5 V - Balances switching speed and gate driver power requirements |
| ID (cont) | 36.5 A @ TC = 25 °C - Sustains high pulsed loads without derating when heatsinked |
| EAS | 80 mJ - Withstands single-pulse inductive energy during load dump or hot-swap events |
| RthJA | 42 °C/W max - Defines minimum PCB copper area needed for ambient-limited thermal design |
Pinout & Package
SO-8 (MS-012) surface-mount package with exposed drain paddle for thermal enhancement; 100% lead (Pb)-free and halogen-free construction per RoHS Directive 2011/65/EU.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G | Gate input - Accepts logic-level drive; 0.2–1.6 Ω gate resistance affects turn-on/off timing |
| 2, 3, 4, 5, 7, 8 | D | Drain terminals - All tied internally to exposed paddle; primary current path and thermal interface |
| 6 | S | Source - Reference node for gate drive and current sensing; connects to power ground plane |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables ultra-low RDS(on) with stable threshold across temperature for predictable gate drive timing |
| 100% UIS tested | Guarantees robustness against unclamped inductive switching stress in synchronous rectifier failure modes |
| Halogen-free & Pb-free | Meets IPC-J-STD-609A Class 1 and JEDEC JS709B requirements for green electronics manufacturing |
| Exposed drain paddle | Reduces RthJF to 16 °C/W (typ.), enabling >3 W dissipation on 1" × 1" FR4 with 2 oz Cu |
Applications
| Server VRM Low-Side Switch | Industrial 24-V OR-ing Controller |
|---|---|
Use Scenario: High-efficiency 48-V to 12-V intermediate bus converter in dual-phase server VRM delivering up to 120 A per phase. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET switched at 500 kHz with 4.5-V gate drive from integrated controller. Use Value: 3.0 mΩ RDS(on) at 4.5 V reduces conduction loss by 35% vs. legacy 5-mΩ devices, improving full-load efficiency by 0.8%. | Use Scenario: Redundant 24-V DC power supply backplane where two supplies feed a common load via ideal diode control. IC Role / Device Role / Timing Role: N-channel MOSFET used as active OR-ing switch with external gate driver monitoring source-drain voltage drop. Use Value: 0.71 V typical body diode forward voltage minimizes reverse recovery loss during switchover transients. |
| Telecom PoE+ PSE Switch | Automotive ADAS Camera Power Sequencer |
Use Scenario: 802.3at PoE+ powered device (PD) front-end with 20-V input clamp and hot-swap protection. IC Role / Device Role / Timing Role: Low-side current-limiting switch placed between PD interface IC and downstream DC/DC regulator. Use Value: 80 mJ avalanche energy rating withstands 100-V transient surges during cable insertion without failure. | Use Scenario: 12-V to 3.3-V point-of-load supply for automotive-grade camera module requiring ASIL-B functional safety compliance. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback, driven by transformer-coupled gate signal. Use Value: –55 °C to +150 °C operating range ensures reliable startup and operation in under-hood thermal environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | 20-V, 38-A, RDS(on) = 2.8 mΩ @ 10 V; SO-8 but no exposed drain paddle | Higher RthJA (62 °C/W) limits power handling on minimal PCB copper | Prefer SI4158DY-T1-GE3 when thermal performance on compact layouts is critical |
| DMN2020LSD-13 | 20-V, 32-A, RDS(on) = 3.2 mΩ @ 4.5 V; dual-N in SO-8, shared source | Designed for half-bridge configurations; not drop-in for single-switch topologies | Select SI4158DY-T1-GE3 for dedicated low-side switching with maximum current density |
Compared with IRF7470PBF and DMN2020LSD-13, SI4158DY-T1-GE3 delivers superior thermal performance via its exposed drain paddle and lower RDS(on) at 4.5 V, making it optimal for space-constrained, high-current 20-V synchronous rectification where board-level heatsinking is limited.
Availability
SI4158DY-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial OR-ing controllers, telecom PoE+ PDs, and automotive ADAS power sequencers requiring stable component supply and long-term manufacturability.
Supply support for SI4158DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-performance MOSFETs, diodes, optoelectronics, and resistive sensors.
The Si4158DY product line targets high-efficiency, high-current DC/DC conversion in computing, telecom, and industrial power systems, emphasizing low RDS(on), rugged UIS capability, and thermally enhanced packaging.
FAQ
What is the maximum continuous drain current rating for SI4158DY-T1-GE3 at 70 °C case temperature?
The SI4158DY-T1-GE3 supports 27 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package without additional heatsinking and must be verified against actual board layout and airflow conditions in the final design.
Does SI4158DY-T1-GE3 have a specified body diode reverse recovery time?
Yes, the SI4158DY-T1-GE3 has a typical body diode reverse recovery time (trr) of 29 ns at IF = 10 A, dI/dt = 100 A/µs, and TJ = 25 °C. This fast recovery supports efficient operation in synchronous rectifier and OR-ing applications where diode conduction occurs during dead-time intervals.
Is SI4158DY-T1-GE3 suitable for 3.3-V gate drive applications?
No-SI4158DY-T1-GE3 has a gate threshold voltage range of 1.0 V to 2.1 V, but its RDS(on) is only guaranteed down to 4.5 V gate drive (3.0 mΩ max). For reliable 3.3-V operation, a logic-level MOSFET with RDS(on) specified at VGS = 3.3 V is required; SI4158DY-T1-GE3 should be driven with ≥4.5 V.
What is the gate-to-source leakage current specification for SI4158DY-T1-GE3?
The SI4158DY-T1-GE3 specifies ±100 nA maximum gate-to-source leakage (IGSS) at VGS = ±16 V and TJ = 25 °C. This low leakage ensures minimal power loss in high-impedance gate drive networks and supports stable biasing in precision power control circuits.
How is the thermal performance of SI4158DY-T1-GE3 defined for PCB layout?
The SI4158DY-T1-GE3 defines thermal performance via RthJA = 42 °C/W (max) on a 1" × 1" FR4 board with 2 oz Cu, and RthJF = 16 °C/W (typ.) to the drain foot. Layout must maximize copper area connected to pins 2,3,4,5,7,8 and the exposed paddle to achieve rated power dissipation without exceeding TJ = 150 °C.
SI4158DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 36.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 132 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5710 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 6W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4158DY-T1-GE3 FAQ
1.How can I place an order for SI4158DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4158DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4158DY-T1-GE3 reliable?
The price and inventory of SI4158DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4158DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4158DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4158DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4158DY-T1-GE3?
SI4158DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4158DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4158DY-T1-GE3?
For technical support, including SI4158DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4158DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4158DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4158DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4158DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4158DY-T1-GE3?
All SI4158DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4158DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4158DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4158DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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