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Vishay Siliconix SI4160DY-T1-GE3
- Part No.:
- SI4160DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4160DY-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 25.4A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,494
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Product details
Overview
SI4160DY-T1-GE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® power MOSFET in SO-8 package, rated for 25.4 A continuous drain current at TC = 25 °C, with RDS(on) of 4.9 mΩ at VGS = 10 V and 6.3 mΩ at VGS = 4.5 V, optimized for notebook Vcore low-side switching and DC/DC converter applications.
For engineers reviewing the SI4160DY-T1-GE3 datasheet, SI4160DY-T1-GE3 pinout, SI4160DY-T1-GE3 application, or SI4160DY-T1-GE3 equivalent, key selection criteria include gate charge (16.9 nC typ. at 4.5 V), thermal resistance (RthJA = 50 °C/W max), body diode recovery (trr = 19–38 ns), avalanche energy rating (EAS = 45 mJ), and SO-8 footprint compatibility with high-current synchronous buck topologies.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Qg/Qgd ratio (5.1 nC / 5.2 nC), enabling efficient operation in high-frequency synchronous rectification. Its 30 V VDS rating and ±20 V VGS range support robust gate drive margin in 5 V and 3.3 V logic-controlled power stages.
The device integrates a low-VSD body diode (0.73–1.1 V at IS = 3 A) with fast reverse recovery (Qrr = 10–20 nC), reducing shoot-through risk and conduction loss in hard-switched converters. Thermal design is supported by validated RthJF (22 °C/W max) and RthJA (50 °C/W max) values under standard FR4 mounting conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V input rails and transient overvoltage margins in notebook and industrial DC/DC systems. |
| RDS(on) @ 10 V | 4.9 mΩ max - Enables ≤150 mW conduction loss at 15 A, critical for high-efficiency low-side switch in multiphase CPU VRMs. |
| RDS(on) @ 4.5 V | 6.3 mΩ max - Ensures stable on-state performance with 5 V gate drivers and logic-level control without level-shifting circuitry. |
| Qg @ 4.5 V | 16.9 nC typ. - Supports <20 ns turn-on delay and <30 ns rise time with 1 Ω gate resistor, minimizing switching loss at 500 kHz–1 MHz. |
| EAS | 45 mJ - Withstands single-pulse inductive energy up to 30 A × 0.1 mH, enhancing reliability in non-isolated buck converters during load transients. |
| trr | 19–38 ns - Limits reverse recovery charge (Qrr = 10–20 nC), reducing cross-conduction losses and EMI in synchronous rectifier configurations. |
| RthJA | 50 °C/W max - Defines thermal derating envelope on 1" × 1" FR4; requires heatsinking or airflow above ~1.6 W dissipation at ambient. |
Pinout & Package
SO-8 (Narrow) surface-mount package per JEDEC MS-012, 5.0 mm × 4.0 mm × 1.75 mm profile, lead (Pb)-free and halogen-free compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 | Drain (D), Source (S), Gate (G) - pins 1–3 & 5–7 = S; pin 4 = G; pins 6–8 = D | Source terminals (pins 1–3, 5) provide low-inductance return path; drain pads (6–8) enable parallel current handling; gate (pin 4) isolated for clean drive routing. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers industry-leading RDS(on) × Qg figure-of-merit (20.8 mΩ·nC @ 10 V), optimizing trade-off between conduction and switching loss. |
| 100 % Rg and UIS tested | Ensures gate resistance consistency (0.2–1.7 Ω) and unclamped inductive switching robustness across production lots, critical for automotive-qualified designs. |
| Low VSD body diode | 0.73 V typical forward drop at 3 A reduces freewheeling loss by >30 % vs. standard MOSFETs, improving light-load efficiency in buck converters. |
| Thermal performance validation | RthJF = 22 °C/W max enables direct thermal coupling to PCB copper pour, supporting >3 W continuous dissipation with 2 oz copper and 4-layer board layout. |
Applications
| Notebook Vcore Low-Side Switch | DC/DC Converter Synchronous Rectifier |
|---|---|
Use Scenario: High-current, multi-phase voltage regulator module supplying Intel/AMD CPUs in ultrabooks and thin-and-light laptops. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in buck converter phase leg, conducting during bottom-switch conduction interval. Use Value: 4.9 mΩ RDS(on) minimizes I²R loss at 25+ A peak currents, while fast trr prevents shoot-through during dead-time transitions. |
Use Scenario: Secondary-side synchronous rectification in isolated flyback or forward converters for USB-C PD adapters and industrial power supplies. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode, driven by controller's gate signal synchronized to primary-side switching. Use Value: 6.3 mΩ RDS(on) at 4.5 V gate drive eliminates need for external level shifters, and 45 mJ EAS withstands output short-circuit stress. |
| Industrial Motor Drive Half-Bridge | LED Driver High-Side Switch |
Use Scenario: Low-voltage (<30 V) BLDC motor gate driver stage in HVAC blowers, power tools, and robotics actuators. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, commutating motor phase current with precise PWM timing. Use Value: 70 A pulsed drain rating (IDM) supports high-torque startup surges, and 150 °C TJ rating ensures operation in enclosed enclosures. |
Use Scenario: Constant-current LED string switching in architectural lighting and automotive interior modules requiring dimming control. IC Role / Device Role / Timing Role: High-side current source switch controlling LED current via PWM duty cycle modulation. Use Value: ±20 V VGS rating allows safe gate drive with bootstrap circuits; low Qg enables clean 1–20 kHz dimming without gate oscillation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 5.2 mΩ @ 10 V; Qg = 22 nC; SO-8 package; higher gate charge increases switching loss at >1 MHz. | Same VDS and package, but less optimized for ultra-low-Qg high-frequency VRMs. | Prefer SI4160DY-T1-GE3 when gate drive strength is limited or switching frequency exceeds 800 kHz. |
| NTMFS4C026P | RDS(on) = 2.6 mΩ @ 10 V; Qg = 31 nC; PowerSO-8 package; lower RDS(on) but higher Qg and cost. | Superior conduction loss but larger die size limits thermal response in compact layouts. | Choose NTMFS4C026P only if conduction loss dominates system efficiency and board space allows larger thermal pad. |
Compared with IRF7470PBF and NTMFS4C026P, SI4160DY-T1-GE3 delivers the best balance of low Qg, moderate RDS(on), and proven SO-8 thermal performance-making it optimal for space-constrained, high-frequency notebook and industrial DC/DC designs where gate drive capability and thermal management are co-constrained.
Availability
SI4160DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook Vcore regulation, industrial DC/DC converters, and motor drive half-bridge applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for SI4160DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and thermally optimized devices.
The SI4160DY-T1-GE3 belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-current, high-frequency synchronous rectification in computing and industrial power conversion systems.
FAQ
What is the maximum continuous drain current rating for SI4160DY-T1-GE3 at 70 °C case temperature?
The SI4160DY-T1-GE3 supports 20.2 A continuous drain current at TC = 70 °C, as specified in its Absolute Maximum Ratings table. This derated value reflects thermal limitations under sustained high-power operation and must be verified against actual board-level thermal performance using RthJA = 50 °C/W max and ambient conditions. The SI4160DY-T1-GE3 datasheet confirms this rating applies to steady-state conditions on standard FR4.
Does SI4160DY-T1-GE3 support 4.5 V gate drive in synchronous buck applications?
Yes, SI4160DY-T1-GE3 is fully characterized for 4.5 V gate drive, with RDS(on) = 6.3 mΩ max at ID = 10 A and VGS = 4.5 V. Its gate threshold voltage (VGS(th)) ranges from 1.0 V to 2.4 V, ensuring strong enhancement-mode turn-on with standard 5 V logic-level controllers. The SI4160DY-T1-GE3 maintains fast switching (tr = 16–30 ns) even at this voltage, making it suitable for 5 V gate-drive architectures.
What is the avalanche energy rating of SI4160DY-T1-GE3 and how is it validated?
The SI4160DY-T1-GE3 has a single-pulse avalanche energy rating (EAS) of 45 mJ, measured under L = 0.1 mH with IAS = 30 A. This rating is validated per JEDEC JESD24-11 and confirmed by 100 % unclamped inductive switching (UIS) testing during production. The SI4160DY-T1-GE3 datasheet specifies this value applies to junction temperatures up to 150 °C and is critical for surviving output short-circuits in non-isolated DC/DC converters.
How does the body diode performance of SI4160DY-T1-GE3 compare to standard Schottky diodes?
The SI4160DY-T1-GE3 features an integrated body diode with VSD = 0.73 V typical at IS = 3 A and trr = 19–38 ns, outperforming many 30 V Schottky diodes in forward voltage at high current while offering superior thermal coupling to the MOSFET die. Unlike discrete Schottkys, the SI4160DY-T1-GE3 body diode shares the same thermal mass, enabling coordinated thermal management. Its Qrr = 10–20 nC is lower than most Schottkys in this voltage class.
Is SI4160DY-T1-GE3 RoHS-compliant and halogen-free?
Yes, SI4160DY-T1-GE3 is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and IEC 61249-2-21 requirements. The "-GE3" suffix explicitly denotes Vishay's green, halogen-free packaging standard. Material composition data and compliance certificates are available through Vishay's official documentation portal under document number 69069.
SI4160DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 25.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.9mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 54 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2071 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 5.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4160DY-T1-GE3 FAQ
1.How can I place an order for SI4160DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4160DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4160DY-T1-GE3 reliable?
The price and inventory of SI4160DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4160DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4160DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4160DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4160DY-T1-GE3?
SI4160DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4160DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4160DY-T1-GE3?
For technical support, including SI4160DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4160DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4160DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4160DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4160DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4160DY-T1-GE3?
All SI4160DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4160DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4160DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4160DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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