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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4166DY-T1-GE3

Name: SI4166DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4166DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4166DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4166DY-T1-GE3.pdf

Description:: MOSFET N-CH 30V 30.5A 8SO

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Product details

Overview

SI4166DY-T1-GE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® power MOSFET in SO-8 package, rated for 30.5 A continuous drain current at T_C = 25 °C, with R_DS(on) of 3.9 mΩ at V_GS = 10 V and 5.5 mΩ at V_GS = 4.5 V, optimized for low-side DC/DC conversion in notebook PCs and gaming systems.

For engineers reviewing the SI4166DY-T1-GE3 datasheet, SI4166DY-T1-GE3 pinout, SI4166DY-T1-GE3 application, or SI4166DY-T1-GE3 equivalent, key selection criteria include its 21.5 nC total gate charge at 4.5 V drive, 100% R_g and UIS tested reliability, junction-to-foot thermal resistance of 15 °C/W, and SO-8 footprint compatibility with standard PCB layout practices.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching performance. Its gate threshold voltage (1.2–2.4 V) enables robust 4.5 V logic-level drive, while the 2730 pF input capacitance and 205 pF reverse transfer capacitance support stable operation in synchronous buck converters.

The device integrates a body diode with 0.74–1.1 V forward voltage at 3 A and 28–55 ns reverse recovery time, enabling efficient freewheeling in low-side switch configurations. Thermal design is supported by validated junction-to-ambient (41 °C/W max) and junction-to-foot (19 °C/W max) resistance ratings under defined test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Max	30 V - supports 24 V nominal input rails with margin for transients
R_DS(on) @ 10 V	3.9 mΩ - enables <1 W conduction loss at 16 A DC output
R_DS(on) @ 4.5 V	5.5 mΩ - ensures full enhancement with standard 5 V microcontroller GPIO
Q_g Typ	21.5 nC - determines gate driver current requirement (~2.15 mA avg for 1 MHz switching)
I_D Cont. @ T_C	30.5 A - defines maximum continuous current with heatsink at case temperature ≤25 °C
R_thJF Max	19 °C/W - sets minimum thermal interface requirement for foot-mounted heatsinking
E_AS	45 mJ - quantifies single-pulse avalanche energy handling capability

Pinout & Package

SO-8 narrow-body surface-mount package per JEDEC MS-012, 5.0 mm × 4.0 mm footprint, 1.75 mm max height, lead (Pb)-free and halogen-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8	Drain (D), Source (S), Gate (G)	Pins 1–3 and 5–7 are parallel-connected Drain terminals; Pins 4 and 8 are Gate and Source respectively - provides low-inductance, high-current drain path and dedicated gate control

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for high-efficiency switching
100% R_g tested	Ensures consistent gate resistance across production lots, critical for predictable turn-on timing
100% UIS tested	Guarantees ruggedness against unclamped inductive switching stress in real-world converter layouts
Low Q_gd/Q_g ratio	7.1 nC / 21.5 nC ≈ 0.33 - reduces Miller plateau duration and improves EMI behavior
Body diode softness factor	trr = 28–55 ns with Q_rr = 21–42 nC - minimizes voltage overshoot during synchronous rectification

Applications

Notebook PC Power Delivery	Gaming Laptop VRM
Use Scenario: High-current, space-constrained 12 V → 1.2 V CPU core supply using multiphase synchronous buck topology. IC Role / Device Role / Timing Role: Low-side power switch conducting high ripple current during freewheeling phase. Use Value: 5.5 mΩ R_DS(on) at 4.5 V drive enables >95% efficiency at 30 A load without external level-shifting circuitry.	Use Scenario: GPU voltage regulator module requiring rapid transient response and thermal resilience under burst loads. IC Role / Device Role / Timing Role: Synchronous rectifier in interleaved buck stage, operating at 300–600 kHz. Use Value: 21.5 nC Q_g and 205 pF C_rss allow clean gate drive with minimal shoot-through risk and low switching loss.
Industrial DC/DC Converter	Embedded System PMIC
Use Scenario: 24 V input isolated/non-isolated converter for programmable logic controller I/O modules. IC Role / Device Role / Timing Role: Primary low-side switch in secondary-side synchronous rectification or primary-side active clamp. Use Value: 45 mJ E_AS rating supports reliable operation during output short-circuit or startup fault conditions.	Use Scenario: Compact multi-rail power management IC with integrated discrete FETs for FPGA or SoC auxiliary supplies. IC Role / Device Role / Timing Role: Discrete low-side switch co-packaged with controller IC for 3.3 V or 1.8 V LDO replacement. Use Value: SO-8 footprint matches standard PMIC layout templates, and 15 °C/W R_thJF enables direct thermal coupling to ground plane.

Notebook PC Power Delivery

Gaming Laptop VRM

Use Scenario: High-current, space-constrained 12 V → 1.2 V CPU core supply using multiphase synchronous buck topology.

IC Role / Device Role / Timing Role: Low-side power switch conducting high ripple current during freewheeling phase.

Use Value: 5.5 mΩ R_DS(on) at 4.5 V drive enables >95% efficiency at 30 A load without external level-shifting circuitry.

Use Scenario: GPU voltage regulator module requiring rapid transient response and thermal resilience under burst loads.

IC Role / Device Role / Timing Role: Synchronous rectifier in interleaved buck stage, operating at 300–600 kHz.

Use Value: 21.5 nC Q_g and 205 pF C_rss allow clean gate drive with minimal shoot-through risk and low switching loss.

Industrial DC/DC Converter

Embedded System PMIC

Use Scenario: 24 V input isolated/non-isolated converter for programmable logic controller I/O modules.

IC Role / Device Role / Timing Role: Primary low-side switch in secondary-side synchronous rectification or primary-side active clamp.

Use Value: 45 mJ E_AS rating supports reliable operation during output short-circuit or startup fault conditions.

Use Scenario: Compact multi-rail power management IC with integrated discrete FETs for FPGA or SoC auxiliary supplies.

IC Role / Device Role / Timing Role: Discrete low-side switch co-packaged with controller IC for 3.3 V or 1.8 V LDO replacement.

Use Value: SO-8 footprint matches standard PMIC layout templates, and 15 °C/W R_thJF enables direct thermal coupling to ground plane.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 4.5 mΩ @ 10 V; Q_g = 25 nC; SO-8 package	Slightly higher gate charge increases driver loss; identical thermal footprint	Prefer SI4166DY-T1-GE3 when minimizing gate drive power or optimizing for 4.5 V logic-level drive.
DMN3025LSD-13	R_DS(on) = 2.5 mΩ @ 10 V; Q_g = 28 nC; dual-N SO-8 package	Lower R_DS(on) but higher Q_g; requires redesign for single-FET use	Choose SI4166DY-T1-GE3 for single-channel simplicity and proven 4.5 V drive margin in cost-sensitive designs.

Compared with IRF7470PBF and DMN3025LSD-13, the SI4166DY-T1-GE3 offers the best balance of low 4.5 V R_DS(on), moderate gate charge, and single-device SO-8 integration-making it optimal for compact, thermally constrained low-side switch applications where gate drive voltage headroom is limited.

Availability

SI4166DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC power delivery, gaming laptop VRMs, and industrial DC/DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SI4166DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.

The SI4166DY-T1-GE3 belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-current, low-voltage synchronous buck converters in portable and high-performance computing applications.

FAQ

What is the maximum continuous drain current for SI4166DY-T1-GE3 at 70 °C case temperature?

The SI4166DY-T1-GE3 supports 24.5 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package under sustained power dissipation; actual usable current depends on PCB copper area, airflow, and heatsinking. The SI4166DY-T1-GE3 datasheet confirms this value under steady-state conditions with no additional heatsink.

Does SI4166DY-T1-GE3 support 3.3 V logic-level gate drive?

The SI4166DY-T1-GE3 has a gate threshold voltage range of 1.2–2.4 V, but its R_DS(on) is not characterized below V_GS = 4.5 V. At 3.3 V, the device will partially enhance but cannot guarantee the 5.5 mΩ on-resistance - conduction losses increase significantly. For reliable 3.3 V drive, a gate driver or level shifter is recommended. The SI4166DY-T1-GE3 specification sheet explicitly lists parameters only down to 4.5 V.

What is the avalanche energy rating of SI4166DY-T1-GE3 and how is it tested?

The SI4166DY-T1-GE3 is rated for 45 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH, verified via 100% Unclamped Inductive Switching (UIS) testing per JEDEC standards. This rating applies to transient overvoltage events during switching, such as in synchronous buck freewheeling. The SI4166DY-T1-GE3 datasheet specifies E_AS under defined test conditions and notes that repeated avalanche stress degrades reliability.

How does the thermal performance of SI4166DY-T1-GE3 compare between junction-to-ambient and junction-to-foot?

The SI4166DY-T1-GE3 has a maximum junction-to-ambient thermal resistance (R_thJA) of 41 °C/W on a 1" × 1" FR4 board, while its junction-to-foot (drain) resistance (R_thJF) is 19 °C/W under steady-state conditions. This 2.2× improvement confirms that thermal management via the drain pad (e.g., internal PCB copper pour or external heatsink) delivers significantly better cooling than relying solely on ambient convection. The SI4166DY-T1-GE3 datasheet validates both metrics with distinct test setups.

Is SI4166DY-T1-GE3 suitable for synchronous rectification in isolated DC/DC topologies?

Yes - the SI4166DY-T1-GE3 is well-suited for synchronous rectification due to its low R_DS(on) (5.5 mΩ @ 4.5 V), fast body diode recovery (t_rr = 28–55 ns), and low Q_rr (21–42 nC), which minimize reverse recovery loss and voltage spikes. Its SO-8 package allows straightforward gate drive isolation. The SI4166DY-T1-GE3 application notes confirm use in secondary-side synchronous rectifiers for flyback and forward converters.

SI4166DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2730 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 6.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4166DY-T1-GE3 FAQ

1.How can I place an order for SI4166DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4166DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4166DY-T1-GE3 reliable?

The price and inventory of SI4166DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4166DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4166DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4166DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4166DY-T1-GE3?

SI4166DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4166DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4166DY-T1-GE3?

For technical support, including SI4166DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4166DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4166DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4166DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4166DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4166DY-T1-GE3?

All SI4166DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4166DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4166DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4166DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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